Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive...Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.展开更多
The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of...The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.展开更多
Accurately forecasting the high-dimensional chaotic dynamics of semiconductor laser(SL)networks is essential in photonics research.In this study,we propose a spatiotemporal multiplexed photonic reservoir computing(STM...Accurately forecasting the high-dimensional chaotic dynamics of semiconductor laser(SL)networks is essential in photonics research.In this study,we propose a spatiotemporal multiplexed photonic reservoir computing(STM-PRC)architecture,specifically designed for parallel prediction of the high-dimensional chaotic dynamics in complex SL networks.This is accomplished by decomposing the prediction task into multiple simplified reservoirs,leveraging the intrinsic topological characteristics of the network.Additionally,we introduce a dimensionality reduction technique for high-dimensional chaotic datasets,which exploits the symmetrical properties of the network topology and cluster synchronization patterns derived from complex network theory.This approach further simplifies the prediction process and enhances the computational efficiency of the parallel STM-PRC system.The feasibility and effectiveness of the proposed framework are demonstrated through numerical simulations and corroborated by experimental validation.Our results expand the application potential of SL networks in all-optical communication systems and suggest new directions for optical information processing.展开更多
We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio th...We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. .展开更多
This paper investigates the influences of a semiconductor laser with narrow linewidth on a fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer. It establishes an effective numerical model t...This paper investigates the influences of a semiconductor laser with narrow linewidth on a fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer. It establishes an effective numerical model to describe the noises and linewidth of a semiconductor laser, taking into account their correlations. Simulation shows that frequency noise has great influences on location errors and their relationship is numerically investigated. Accordingly, there is need to determine the linewidth of the laser less than a threshold and obtain the least location errors. Furthermore, experiments are performed by a sensor prototype using three semiconductor lasers with different linewidths, respectively, with polarization maintaining optical fibres and couplers to eliminate the polarization induced noises and fading. The agreement of simulation with experimental results means that the proposed numerical model can make a comprehensive description of the noise behaviour of a semiconductor laser. The conclusion is useful for choosing a laser source for fibre-optic distributed disturbance sensor to achieve optimized location accuracy. What is more, the proposed numerical model can be widely used for analysing influences of semiconductor lasers on other sensing, communication and optical signal processing systems.展开更多
The effects of optical sources with different laser linewidths on Brillouin optical time domain reflectometry （BOTDR） are investigated numerically and experimentally. Simulation results show that the spectral linewi...The effects of optical sources with different laser linewidths on Brillouin optical time domain reflectometry （BOTDR） are investigated numerically and experimentally. Simulation results show that the spectral linewidth of spontaneous Brillouin scattering remains almost constant when the laser linewidth is less than 1 MHz at the same pulse width; otherwise, it increases sharply. A comparison between a fiber laser （FL） with 4-kHz linewidth at 3 dB and a distributed feedback （DFB） laser with 3-MHz linewidth is made experimentally. When a constant laser power is launched into the sensing fiber, the fitting linewidths of the beat signals （backscattered Brillouin light and local oscillator （LO）） is about 5 MHz wider for the DFB laser than for the FL and the intensity of the beat signal is about a half. Furthermore, the frequency fluctuation in the long sensing fiber is lower for the FL source, yielding about 2 MHz less than that of the DFB laser, indicating higher temperature/strain resolution. The experimental results are in good agreement with the numerical simulations.展开更多
Two Nd：YAG lasers operating at 1064 nm are separately servo-locked to two vertically mounted ultra-stable cavities. The optical heterodyne beat between two cavity-stabilized lasers shows that the linewidth of each la...Two Nd：YAG lasers operating at 1064 nm are separately servo-locked to two vertically mounted ultra-stable cavities. The optical heterodyne beat between two cavity-stabilized lasers shows that the linewidth of each laser reaches 2 Hz and the average frequency drift reduces to less than 1 Hz/s.展开更多
A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and sing...A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ～24cm -1 is obtained.展开更多
Interference filter-stabilized external cavity diode lasers （ECDLs） have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs r...Interference filter-stabilized external cavity diode lasers （ECDLs） have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs requires an ultra-narrow bandwidth （about 0.3 nm） to achieve mode selection, that is considerably expensive and not yet available for a wide range of wavelengths. In this paper, a robust ECDL using an available broad bandwidth （about 4 nm） interference filter as the wavelength discriminator is constructed and tested. The ECDL demonstrated a narrow Lorentzian fitted linewidth of 95 kHz and a spectral purity of 2.9 MHz. The long-term frequency stability of the ECDL reaches 5.59 x 10 12.展开更多
Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate conf...Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.展开更多
We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the ampl...We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.展开更多
Based on a semiconductor laser （SL） with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs （MFCs） is proposed and investigated numerically. The ...Based on a semiconductor laser （SL） with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs （MFCs） is proposed and investigated numerically. The results show that, under suitable operation parameters, the SL with incoherent optical feedback can be driven to operate at a regular pulsing state, and the generated MFCs have bandwidths broader than 40 GHz within a 10 dB amplitude variation. For a fixed bias current, the line spacing （or repetition frequency） of the MFCs can be easily tuned by varying the feedback delay time and the feedback strength, and the tuning range of the line spacing increases with the increase in the bias current. The linewidth of the MFCs is sensitive to the variation of the feedback delay time and the feedback strength, and a linewidth of tens of KHz can be achieved through finely adjusting the feedback delay time and the feedback strength. In addition, mappings of amplitude variation, repetition frequency, and linewidth of MFCs in the parameter space of the feedback delay time and the feedback strength are presented.展开更多
We introduce a new method of simultaneously implementing frequency stabilization and frequency shift for semiconductor lasers. We name this method the frequency tunable modulation transfer spectroscopy （FTMTS）. To r...We introduce a new method of simultaneously implementing frequency stabilization and frequency shift for semiconductor lasers. We name this method the frequency tunable modulation transfer spectroscopy （FTMTS）. To realize a stable output of 780 nm semiconductor laser, an FTMTS optical heterodyne frequency stabilization system is constructed. Before entering into the frequency stabilization system, the probe laser passes through an acousto-optical modulator （AOM） twice in advance to achieve tunable frequency while keeping the light path stable. According to the experimental results, the frequency changes from 120 MHz to 190 MHz after the double-pass AOM, and the intensity of laser entering into the system is greatly changed, but there is almost no change in the error signal of the FTMTS spectrum. Using this signal to lock the laser frequency, we can ensure that the frequency of the laser changes with the amount of AOM shift. Therefore, the magneto-optical trap （MOT）-molasses process can be implemented smoothly.展开更多
Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realiz...Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realized by the symmetric or asymmetric laser systems. Also, the influence of parameter mismatches on chaos synchronization is investigated, and the results imply that these two lasers can achieve good synchronization, with smaller tolerance of parameter mismatch existing.展开更多
We use traveling wave coupling theory to investigate the time domain characteristics of tapered semiconductor lasers with DBR gratings.We analyze the influence of the length of second order gratings on the power and s...We use traveling wave coupling theory to investigate the time domain characteristics of tapered semiconductor lasers with DBR gratings.We analyze the influence of the length of second order gratings on the power and spectrum of output light,and optimizing the length of gratings,in order to reduce the mode competition effect in the device,and obtain the high power output light wave with good longitudinal mode characteristics.展开更多
We design a hybrid integrated chaotic semiconductor laser with short-cavity optical feedback.It can be assembled in a commercial butterfly shell with just three micro-lenses.One of them is coated by a transflective fi...We design a hybrid integrated chaotic semiconductor laser with short-cavity optical feedback.It can be assembled in a commercial butterfly shell with just three micro-lenses.One of them is coated by a transflective film to provide the optical feedback for chaos generation while insuring regular laser transmission.We prove the feasibility of the chaos generation in this compact structure and provide critical external parameters for the fabrication by theoretical simulations.Rather than the usual changeless internal parameters used in previous simulation research,we extract the real parameters of the chip by experiment.Moreover,the maps of the largest Lyapunov exponent with varying bias current and feedback intensity Kap demonstrate the dynamic characteristics under different external-cavity conditions.Each laser chip has its own optimal external cavity length(L)and feedback intensity(Kap)to generate chaos because of the different internal parameters.We have acquired two ranges of optimal parameters(L=4 mm,0.12〈Kap〈0.2 and L=5 mm,0.07〈Kap〈0.12)for two different chips.展开更多
Polarization switching （PS） dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs） are studied theoretically in this paper. A group of dimensionless rate...Polarization switching （PS） dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs） are studied theoretically in this paper. A group of dimensionless rate equations is derived to describe our model. While analysing the PS characteristics, we focus on the effects of coupling rate and frequency detuning regarding different mutual injection types. The results indicate that the x-mode injection defers the occurrence of PS, while the y-mode injection leads the PS to occur at a lower current. Strong enough polarization-selective injection can suppress the PS. Moreover, if frequency detuning is considered, the effects of polarization-selective mutual injection will be weakened. To evaluate the synchronization performance, the correlation coefficients and output dynamics of VCSELs with both pure mode and mixed mode polarizations are given. It is found that performance of complete synchronization is sensitive to the frequency mismatch but it is little affected by mixed mode polarizations, which is opposite to the case of injection-locking synchronization.展开更多
We present two cavity-stabilized lasers at 1555 nm, which are built to be the frequency source for a transportable photonic microwave generation system. The frequency instability reaches the thermal noise limit （7 &#...We present two cavity-stabilized lasers at 1555 nm, which are built to be the frequency source for a transportable photonic microwave generation system. The frequency instability reaches the thermal noise limit （7 ×10-16） of the 10-cm ultra-low expansion glass cavity at 1-10s averaging time and the beat signal of the two lasers reveals a remarkable linewidth of 185mHz.展开更多
The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the...The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.展开更多
The ideal behavior of communication system requires a single frequency carrier. In optical communication system, light is used as a carrier. Practical laser source has a finite linewidth due to variations in the frequ...The ideal behavior of communication system requires a single frequency carrier. In optical communication system, light is used as a carrier. Practical laser source has a finite linewidth due to variations in the frequency of operation, hence, resulting in undesired phase perturbations in the signal whereas the ideal requirement is the delta function spectral shape at the carrier frequency. The spectral shape gets broadened due to phase noise and is modeled as lorentzian shape. Linewidth is a measure of stability of laser phase noise with time. Coherent Optical Orthogonal frequency division multiplexing (CO-OFDM) along with the spectrally efficient Quadrature Amplitude Modulation (QAM) formats is emerging as one of the best solutions for future high speed fiber transmission systems. Though the coherent, receivers have advantages in terms of sensitivity and selectivity, laser phase noise is the main limitation of such systems as the laser phase noise further causes common phase rotation of all the subcarriers per symbol and also results in inter carrier interference. QAM formats are also susceptible to laser phase noise. Phase noise in coherent systems is governed by laser linewidth. Hence, it is very important to investigate the impact of laser linewidth in CO-OFDM systems. This paper investigates the tolerable laser linewidths for different QAM formats in a 40 Gbps COOFDM system.展开更多
基金Jiangsu Province Key R&D Program(Industry Prospect and Common Key Technologies)(No.BE2014083)Jiangxi Natural Science Foundation Project(No.2019ACBL20054)。
文摘Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs.
文摘The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.
基金supported in part by National Natural Science Foundation of China under Grant(Nos.62431024,U22A2089,62375228)Sichuan Science Fund for Distinguished Young Scholars(2023NSFSC1969)Fundamental Research Funds for the Central Universities(2682025ZTPY058)。
文摘Accurately forecasting the high-dimensional chaotic dynamics of semiconductor laser(SL)networks is essential in photonics research.In this study,we propose a spatiotemporal multiplexed photonic reservoir computing(STM-PRC)architecture,specifically designed for parallel prediction of the high-dimensional chaotic dynamics in complex SL networks.This is accomplished by decomposing the prediction task into multiple simplified reservoirs,leveraging the intrinsic topological characteristics of the network.Additionally,we introduce a dimensionality reduction technique for high-dimensional chaotic datasets,which exploits the symmetrical properties of the network topology and cluster synchronization patterns derived from complex network theory.This approach further simplifies the prediction process and enhances the computational efficiency of the parallel STM-PRC system.The feasibility and effectiveness of the proposed framework are demonstrated through numerical simulations and corroborated by experimental validation.Our results expand the application potential of SL networks in all-optical communication systems and suggest new directions for optical information processing.
文摘We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. .
文摘This paper investigates the influences of a semiconductor laser with narrow linewidth on a fibre-optic distributed disturbance sensor based on Mach-Zehnder interferometer. It establishes an effective numerical model to describe the noises and linewidth of a semiconductor laser, taking into account their correlations. Simulation shows that frequency noise has great influences on location errors and their relationship is numerically investigated. Accordingly, there is need to determine the linewidth of the laser less than a threshold and obtain the least location errors. Furthermore, experiments are performed by a sensor prototype using three semiconductor lasers with different linewidths, respectively, with polarization maintaining optical fibres and couplers to eliminate the polarization induced noises and fading. The agreement of simulation with experimental results means that the proposed numerical model can make a comprehensive description of the noise behaviour of a semiconductor laser. The conclusion is useful for choosing a laser source for fibre-optic distributed disturbance sensor to achieve optimized location accuracy. What is more, the proposed numerical model can be widely used for analysing influences of semiconductor lasers on other sensing, communication and optical signal processing systems.
基金the National High Technology Research and Development Program of China(Grant No.2012AA041203)the Science and Technology Commission of Shanghai Municipality,China(Grant No.13XD1425400)the Pudong New Area Science and Technology Development Fund,China(Grant No.PKJ2012-D04)
文摘The effects of optical sources with different laser linewidths on Brillouin optical time domain reflectometry （BOTDR） are investigated numerically and experimentally. Simulation results show that the spectral linewidth of spontaneous Brillouin scattering remains almost constant when the laser linewidth is less than 1 MHz at the same pulse width; otherwise, it increases sharply. A comparison between a fiber laser （FL） with 4-kHz linewidth at 3 dB and a distributed feedback （DFB） laser with 3-MHz linewidth is made experimentally. When a constant laser power is launched into the sensing fiber, the fitting linewidths of the beat signals （backscattered Brillouin light and local oscillator （LO）） is about 5 MHz wider for the DFB laser than for the FL and the intensity of the beat signal is about a half. Furthermore, the frequency fluctuation in the long sensing fiber is lower for the FL source, yielding about 2 MHz less than that of the DFB laser, indicating higher temperature/strain resolution. The experimental results are in good agreement with the numerical simulations.
基金Project supported by the National Natural Science Foundation of China (Grant No 60490280)the State Key Development for Basic Research Program of China (Grant Nos 2006CB806005 and 2006CB921104)+2 种基金the Science and Technology Commission of Shanghai Municipality, China (Grant Nos 06JC14026 and 07JC14019)Shanghai Pujiang Talent Program, China (Grant No 07PJ14038)the Program for Changjiang Scholars and Innovative Research Teams, China
文摘Two Nd：YAG lasers operating at 1064 nm are separately servo-locked to two vertically mounted ultra-stable cavities. The optical heterodyne beat between two cavity-stabilized lasers shows that the linewidth of each laser reaches 2 Hz and the average frequency drift reduces to less than 1 Hz/s.
文摘A fitting process is used to measure the cavity loss and the quasi Fermi level separation for Fabry Pérot semiconductor lasers.From the amplified spontaneous emission (ASE) spectrum,the gain spectrum and single pass ASE obtained by the Cassidy method are applied in the fitting process.For a 1550nm quantum well InGaAsP ridge waveguide laser,the cavity loss of about ～24cm -1 is obtained.
基金Project supported by the Foundation of Based Technology of China(Grant No.YXBGD20151JL01)the National Natural Science Foundation of China(Grant Nos.61376049,61604007,11674016,61378058,61575008,and 61574011)+1 种基金the Natural Science Foundation of Beijing City,China(Grant Nos.4172009 and4152003)the Beijing Municipal Commission of Education of China(Grant Nos.PXM2017 014204 500034 and PXM2016 014204 500018)
文摘Interference filter-stabilized external cavity diode lasers （ECDLs） have properties of simple configurations, high sta- bilities, and narrow linewidths. However, the interference filter used in common ECDL designs requires an ultra-narrow bandwidth （about 0.3 nm） to achieve mode selection, that is considerably expensive and not yet available for a wide range of wavelengths. In this paper, a robust ECDL using an available broad bandwidth （about 4 nm） interference filter as the wavelength discriminator is constructed and tested. The ECDL demonstrated a narrow Lorentzian fitted linewidth of 95 kHz and a spectral purity of 2.9 MHz. The long-term frequency stability of the ECDL reaches 5.59 x 10 12.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61274046,61335009,61201103,and 61320106013)the National High Technology Research and Development Program of China(Grant No.2013AA014202)
文摘Internal loss is a key internal parameter for high power 1060-nm InGaAs/A1GaAs semiconductor laser. In this paper, we discuss the origin of internal loss of 1060-nm InGaAs/GaAs quantum welt （QW） AIGaAs separate confinement het- erostructure semiconductor laser, and the method to reduce internal loss. By light doping the n-cladding layer, and stepwise doping the p-cladding layer combined with the expanded waveguide layer, a broad area laser with internal loss of 1/cm is designed and fabricated. Ridge waveguide laser with an output power of 350 mW is obtained. The threshold current and slope efficiency near the threshold current are 20 mA and 0.8 W/A, respectively.
文摘We solve the single mode coupled rate equations by computer,simulate the behavior of a gain switch of an AlGaInP red light semiconductor laser diode,and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.
基金supported by the National Natural Science Foundation of China(Grant Nos.61178011,11204248,61475127,and 61275116)the Natural Science Foundation of Chongqing City,China(Grant Nos.2012jj B40011 and 2012jj A40012)the Open Fund of the State Key Lab of Millimeter Waves of China(Grant No.K201418)
文摘Based on a semiconductor laser （SL） with incoherent optical feedback, a novel all-optical scheme for generating tunable and broadband microwave frequency combs （MFCs） is proposed and investigated numerically. The results show that, under suitable operation parameters, the SL with incoherent optical feedback can be driven to operate at a regular pulsing state, and the generated MFCs have bandwidths broader than 40 GHz within a 10 dB amplitude variation. For a fixed bias current, the line spacing （or repetition frequency） of the MFCs can be easily tuned by varying the feedback delay time and the feedback strength, and the tuning range of the line spacing increases with the increase in the bias current. The linewidth of the MFCs is sensitive to the variation of the feedback delay time and the feedback strength, and a linewidth of tens of KHz can be achieved through finely adjusting the feedback delay time and the feedback strength. In addition, mappings of amplitude variation, repetition frequency, and linewidth of MFCs in the parameter space of the feedback delay time and the feedback strength are presented.
基金Project supported by the National Key Scientific Instrument and Equipment Development Project,China(Grant No.2014YQ35046103)
文摘We introduce a new method of simultaneously implementing frequency stabilization and frequency shift for semiconductor lasers. We name this method the frequency tunable modulation transfer spectroscopy （FTMTS）. To realize a stable output of 780 nm semiconductor laser, an FTMTS optical heterodyne frequency stabilization system is constructed. Before entering into the frequency stabilization system, the probe laser passes through an acousto-optical modulator （AOM） twice in advance to achieve tunable frequency while keeping the light path stable. According to the experimental results, the frequency changes from 120 MHz to 190 MHz after the double-pass AOM, and the intensity of laser entering into the system is greatly changed, but there is almost no change in the error signal of the FTMTS spectrum. Using this signal to lock the laser frequency, we can ensure that the frequency of the laser changes with the amount of AOM shift. Therefore, the magneto-optical trap （MOT）-molasses process can be implemented smoothly.
文摘Based on the rate equations, we have investigated three types of chaos synchronizations in injection-locked semiconductor lasers with optical feedback. Numerical simulation shows that the synchronization can be realized by the symmetric or asymmetric laser systems. Also, the influence of parameter mismatches on chaos synchronization is investigated, and the results imply that these two lasers can achieve good synchronization, with smaller tolerance of parameter mismatch existing.
文摘We use traveling wave coupling theory to investigate the time domain characteristics of tapered semiconductor lasers with DBR gratings.We analyze the influence of the length of second order gratings on the power and spectrum of output light,and optimizing the length of gratings,in order to reduce the mode competition effect in the device,and obtain the high power output light wave with good longitudinal mode characteristics.
基金Project supported by the International Science and Technology Cooperation Program of China(Grant No.2014DFA50870)the National Natural Science Foundation of China(Grant Nos.61377089,61475111,and 61527819)+4 种基金Shanxi Province Natural Science Foundation,China(Grant No.2015011049)Shanxi Province Youth Science and Technology Foundation,China(Grant No.201601D021069)Shanxi Scholarship Council of China(Grant No.2016-036)Program for the Outstanding Innovative Teams of Higher Learning Institutions of Shanxi,ChinaProgram for Sanjin Scholar,China
文摘We design a hybrid integrated chaotic semiconductor laser with short-cavity optical feedback.It can be assembled in a commercial butterfly shell with just three micro-lenses.One of them is coated by a transflective film to provide the optical feedback for chaos generation while insuring regular laser transmission.We prove the feasibility of the chaos generation in this compact structure and provide critical external parameters for the fabrication by theoretical simulations.Rather than the usual changeless internal parameters used in previous simulation research,we extract the real parameters of the chip by experiment.Moreover,the maps of the largest Lyapunov exponent with varying bias current and feedback intensity Kap demonstrate the dynamic characteristics under different external-cavity conditions.Each laser chip has its own optimal external cavity length(L)and feedback intensity(Kap)to generate chaos because of the different internal parameters.We have acquired two ranges of optimal parameters(L=4 mm,0.12〈Kap〈0.2 and L=5 mm,0.07〈Kap〈0.12)for two different chips.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10174057 and 90201011）, and the Foundation for Key Program of Ministry of Education, China （Grant No 2005-105148）.
文摘Polarization switching （PS） dynamics and synchronization performances of two mutually coupled vertical-cavity surface-emitting lasers （VCSELs） are studied theoretically in this paper. A group of dimensionless rate equations is derived to describe our model. While analysing the PS characteristics, we focus on the effects of coupling rate and frequency detuning regarding different mutual injection types. The results indicate that the x-mode injection defers the occurrence of PS, while the y-mode injection leads the PS to occur at a lower current. Strong enough polarization-selective injection can suppress the PS. Moreover, if frequency detuning is considered, the effects of polarization-selective mutual injection will be weakened. To evaluate the synchronization performance, the correlation coefficients and output dynamics of VCSELs with both pure mode and mixed mode polarizations are given. It is found that performance of complete synchronization is sensitive to the frequency mismatch but it is little affected by mixed mode polarizations, which is opposite to the case of injection-locking synchronization.
基金Supported by the National Natural Science Foundation of China under Grant No 91536217the West Light Foundation of the Chinese Academy of Sciences under Grant No 2013ZD02the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2015334
文摘We present two cavity-stabilized lasers at 1555 nm, which are built to be the frequency source for a transportable photonic microwave generation system. The frequency instability reaches the thermal noise limit （7 ×10-16） of the 10-cm ultra-low expansion glass cavity at 1-10s averaging time and the beat signal of the two lasers reveals a remarkable linewidth of 185mHz.
基金supported by the National Natural Science Foundation of China(NNSFC)(Grant No.62174154).
文摘The optical catastrophic damage that usually occurs at the cavity surface of semiconductor lasers has become the main bottleneck affecting the improvement of laser output power and long-term reliability.To improve the output power of 680 nm AlGaInP/GaInP quantum well red semiconductor lasers,Si-Si_(3)N_(4)composited dielectric layers are used to induce its quantum wells to be intermixed at the cavity surface to make a non-absorption window.Si with a thickness of 100 nm and Si_(3)N_(4)with a thickness of 100 nm were grown on the surface of the epitaxial wafer by magnetron sputtering and PECVD as diffusion source and driving source,respectively.Compared with traditional Si impurity induced quantum well intermixing,this paper realizes the blue shift of 54.8 nm in the nonabsorbent window region at a lower annealing temperature of 600 ℃ and annealing time of 10 min.Under this annealing condition,the wavelength of the gain luminescence region basically does not shift to short wavelength,and the surface morphology of the whole epitaxial wafer remains fine after annealing.The application of this process condition can reduce the difficulty of production and save cost,which provides an effective method for upcoming fabrication.
文摘The ideal behavior of communication system requires a single frequency carrier. In optical communication system, light is used as a carrier. Practical laser source has a finite linewidth due to variations in the frequency of operation, hence, resulting in undesired phase perturbations in the signal whereas the ideal requirement is the delta function spectral shape at the carrier frequency. The spectral shape gets broadened due to phase noise and is modeled as lorentzian shape. Linewidth is a measure of stability of laser phase noise with time. Coherent Optical Orthogonal frequency division multiplexing (CO-OFDM) along with the spectrally efficient Quadrature Amplitude Modulation (QAM) formats is emerging as one of the best solutions for future high speed fiber transmission systems. Though the coherent, receivers have advantages in terms of sensitivity and selectivity, laser phase noise is the main limitation of such systems as the laser phase noise further causes common phase rotation of all the subcarriers per symbol and also results in inter carrier interference. QAM formats are also susceptible to laser phase noise. Phase noise in coherent systems is governed by laser linewidth. Hence, it is very important to investigate the impact of laser linewidth in CO-OFDM systems. This paper investigates the tolerable laser linewidths for different QAM formats in a 40 Gbps COOFDM system.
