We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wave...We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wavelength of 1030 nm. Due to self saturable absorption of the quantum wells, the disk laser emitted at the self-Q-switching state with a pulse width of 13 μs. By introducing the single layer graphene as a saturable absorber into the V-shaped laser cavity, the pulse width of the self-pulse was compressed to 2 μs with a lower pump power of 300 mW. As the pump power was increased, multiple pulses with the pulse width of 1.8 μs appeared. The compression factor was about 7.2.展开更多
This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing a...This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.展开更多
The high peak power of picosecond pulses produced by a self-mode-locked semiconductor disk laser can effectively improve the efficiency of nonlinear frequency conversion.This paper presents the intracavity frequency t...The high peak power of picosecond pulses produced by a self-mode-locked semiconductor disk laser can effectively improve the efficiency of nonlinear frequency conversion.This paper presents the intracavity frequency tripling in a self-mode-locked semiconductor disk laser,and a picosecond pulse train at 327 nm wavelength is achieved.The pulse repetition rate is 0.49 GHz,and the pulse width is 5.0 ps.The obtained maximum ultraviolet output power under mode locking is 30.5 m W,and the corresponding conversion efficiency is obviously larger than that of continuous-wave operation.These ultraviolet picosecond pulses have high spatial and temporal resolution and can be applied in some emerging fields.展开更多
基金supported by the National Basic Research Program of China(Grant No.2013CB922404)the National Natural Science Foundation of China(Grant No.61177047)the Key Project of the National Natural Science Foundation of China(Grant No.61235010)
文摘We demonstrate the first use of single layer graphene for compressing self-Q-switching pulses in semiconductor disk lasers. The gain region of the semiconductor disk laser used InGaAs quantum wells with a central wavelength of 1030 nm. Due to self saturable absorption of the quantum wells, the disk laser emitted at the self-Q-switching state with a pulse width of 13 μs. By introducing the single layer graphene as a saturable absorber into the V-shaped laser cavity, the pulse width of the self-pulse was compressed to 2 μs with a lower pump power of 300 mW. As the pump power was increased, multiple pulses with the pulse width of 1.8 μs appeared. The compression factor was about 7.2.
基金We are grateful for financial supports from the Major Program of National Natural Science Foundation of China （61790584）.
文摘This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.
基金supported by the Cooperation Project between Chongqing Local Universities and Institutions of Chinese Academy of Sciences,Chongqing Municipal Education Commission(No.HZ2021007)the National Natural Science Foundation of China(Nos.61904024,61975003,61790584,and 62025506)the Science and Technology Research Program of Chongqing Municipal Education Commission(No.KJZD-M201900502)。
文摘The high peak power of picosecond pulses produced by a self-mode-locked semiconductor disk laser can effectively improve the efficiency of nonlinear frequency conversion.This paper presents the intracavity frequency tripling in a self-mode-locked semiconductor disk laser,and a picosecond pulse train at 327 nm wavelength is achieved.The pulse repetition rate is 0.49 GHz,and the pulse width is 5.0 ps.The obtained maximum ultraviolet output power under mode locking is 30.5 m W,and the corresponding conversion efficiency is obviously larger than that of continuous-wave operation.These ultraviolet picosecond pulses have high spatial and temporal resolution and can be applied in some emerging fields.
