Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and op...Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.展开更多
Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologie...Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.展开更多
In this paper,the dispersion,attenuation,and bandgap characteristics of in-plane coupled Bloch waves in one-dimensional piezoelectric semiconductor(PSC)phononic crystals are investigated,emphasizing the influence of p...In this paper,the dispersion,attenuation,and bandgap characteristics of in-plane coupled Bloch waves in one-dimensional piezoelectric semiconductor(PSC)phononic crystals are investigated,emphasizing the influence of positive-negative(PN)junctions.Unlike piezoelectric phononic crystals,the coupled Bloch waves in PSC phononic crystals are attenuated due to their semiconductor properties,and thus the solution of Bloch waves becomes more complicated.The transfer matrix of the phononic crystal unit cell is obtained using the state transfer equation.By applying the Bloch theorem for periodic structures,the dispersion relation of the coupled Bloch waves is derived,and the dispersion,attenuation,and bandgap are obtained in the complex wave number domain.It is found that the influence of the PN junction cannot be neglected.Moreover,the effects of the PN junction under different apparent wave numbers and steady-state carrier concentrations are provided.This indicates the feasibility of adjusting the propagation characteristics of Bloch waves through the regulation of the PN heterojunction.展开更多
To address the urgent demand for the miniaturization and multifunctional integration of high-frequency Rayleigh surface wave devices in 5G communication technology,the propagation characteristics of Rayleigh surface w...To address the urgent demand for the miniaturization and multifunctional integration of high-frequency Rayleigh surface wave devices in 5G communication technology,the propagation characteristics of Rayleigh surface waves in an elastic half-space attached by a nanoscale piezoelectric semiconductor(PSC)thin layer with flexoelectricity and size-effects are systematically investigated.Based on the Hamiltonian principle,the elastic dynamic equations and Gauss's theorem of electrostatics are obtained.The eigenvalue problem is numerically solved with a genetic algorithm in MATLAB,and the dispersion properties are obtained.The effects of various key factors,including the flexoelectricity,inertia gradients,strain gradients,electric field gradients,PSC layer thickness,steady-state carrier concentration,and bias electric fields,on the propagation and attenuation characteristics of Rayleigh surface waves are analyzed.The results demonstrate that the increases in the flexoelectric coefficient and strain gradient characteristic length lead to an increase in the real part of the complex phase velocity,while the increases in the inertia gradient characteristic length,electric field gradient characteristic length,PSC layer thickness,and steady-state carrier concentration result in a decrease.Additionally,the bias electric fields significantly influence the Rayleigh surface wave attenuation.The present findings are crucial for the accurate property evaluation of miniaturized highfrequency Rayleigh wave devices,and provide valuable theoretical support for their design and optimization.展开更多
This study aims to present exact multi-field coupling modeling and analysis of a simply-supported rectangular piezoelectric semiconductor(PSC)plate.Under the linear assumption of drift-diffusion current for a small el...This study aims to present exact multi-field coupling modeling and analysis of a simply-supported rectangular piezoelectric semiconductor(PSC)plate.Under the linear assumption of drift-diffusion current for a small electron concentration perturbation,the governing equations are solved by extending the classical Stroh formalism to involve all the physical fields of PSCs.The general solutions are obtained and then utilized to analyze three-dimensional(3D)problems of static deformation and free vibration of the PSC plate.To investigate the multi-physics interactions along the plate thickness,the distribution forms of electromechanical fields and electron concentration perturbation are given exactly,which are helpful for the development of the PSC plate theory.The differences between the PSC and purely piezoelectric as well as purely elastic counterparts are emphasized,in the context of evaluating the material performances with changing initial electron concentration.The results demonstrate that the PSC coupling exists only within a specific range of the initial electron concentration,where it exhibits a transition from the piezoelectric characteristics to the elastic ones.In addition,the dependence of coupling behaviors on the plate thickness is clarified.These results can not only be benchmarks in the development of PSC plate theories or other numerical methods,but also be guidance for the design of plate-based PSC devices.展开更多
The fracture mechanics theory posits that cracks induce strain energy concentration near their tips in structural components,generating localized flexibility that impedes crack propagation.Theoretically,cracks are rep...The fracture mechanics theory posits that cracks induce strain energy concentration near their tips in structural components,generating localized flexibility that impedes crack propagation.Theoretically,cracks are represented as dimensionless,massless spring models,effectively capturing crack characteristics and cross-sectional properties at the crack location.Leveraging this spring-based representation,this study establishes an open-crack model for a one-dimensional(1D)piezoelectric semiconductor(PSC)curved beam under dynamic loading.This model enables the investigation of vibration characteristics in cracked structures.The analytical solutions for the electromechanical fields of the beam are derived using the differential operator method,and the natural frequencies together with the corresponding generalized mode shapes of the beam are determined analytically.Furthermore,the effects of the crack parameters on the natural vibration characteristics of the PSC curved beam are analyzed.展开更多
In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formali...In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formalism and dual-variable and position(DVP)method,the general solution of the coupled fields for the Lamb wave is derived,and then the dispersion equation is obtained by the application of the boundary conditions.First,the influence of semiconducting properties on the dispersion behavior of the Lamb wave in a single-layer PSC plate is analyzed.Then,the propagation characteristics of the Lamb wave in a sandwich plate are investigated in detail.The numerical results show that the wave speed and attenuation depend on the stacking sequence,layer thickness,and initial carrier density,the Lamb wave can propagate without a cut-off frequency in both the homogeneous and multilayer PSC plates due to the semiconducting properties,and the Lamb wave without attenuation can be achieved by carefully selecting the semiconductor property in the upper and lower layers.These new features could be very helpful as theoretical guidance for the design and performance optimization of PSC devices.展开更多
Electrical energy is essential for modern society to sustain economic growths.The soaring demand for the electrical energy,together with an awareness of the environmental impact of fossil fuels,has been driving a shif...Electrical energy is essential for modern society to sustain economic growths.The soaring demand for the electrical energy,together with an awareness of the environmental impact of fossil fuels,has been driving a shift towards the utilization of solar energy.However,traditional solar energy solutions often require extensive spaces for a panel installation,limiting their practicality in a dense urban environment.To overcome the spatial constraint,researchers have developed transparent photovoltaics(TPV),enabling windows and facades in vehicles and buildings to generate electric energy.Current TPV advancements are focused on improving both transparency and power output to rival commercially available silicon solar panels.In this review,we first briefly introduce wavelength-and non-wavelengthselective strategies to achieve transparency.Figures of merit and theoretical limits of TPVs are discussed to comprehensively understand the status of current TPV technology.Then we highlight recent progress in different types of TPVs,with a particular focus on solution-processed thin-film photovoltaics(PVs),including colloidal quantum dot PVs,metal halide perovskite PVs and organic PVs.The applications of TPVs are also reviewed,with emphasis on agrivoltaics,smart windows and facades.Finally,current challenges and future opportunities in TPV research are pointed out.展开更多
Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic a...Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.展开更多
Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respe...Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.展开更多
Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive en...Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.展开更多
Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application ...Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.展开更多
Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_...Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_(3)Te_(6).In this paper,through density functional theory(DFT)calculations,we propose a method to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals.We predict that monolayer(Cr_(4/6),Mo_(2/6))_(3)Te_(6),created via element replacement in monolayer Cr_(3)Te_(6),is a room-temperature ferromagnetic semiconductor exhibiting a band gap of 0.34 eV and a TC of 384 K.Our analysis reveals that the metal-to-semiconductor transition stems from the synergistic interplay of Mo-induced lattice distortion,which resolves band overlap,and the electronic contributions of Mo dopants,which further drive the formation of a distinct band gap.The origin of the high TC is traced to strong superexchange coupling between magnetic ions,analyzed via the superexchange model with DFT and Wannier function calculations.Considering the fast developments in fabrication and manipulation of 2D materials,our theoretical results propose an approach to explore high-temperature ferromagnetic semiconductors derived from experimentally obtained 2D high-temperature ferromagnetic metals through element replacement.展开更多
All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have attracted extensive attention in photoelectric detection for their excellent photoelectric properties and stability.However,the CsPbBr_(3) quantum dot film exh...All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have attracted extensive attention in photoelectric detection for their excellent photoelectric properties and stability.However,the CsPbBr_(3) quantum dot film exhibits a high non-radiative recombination rate,and the mismatch in energy levels with the carbon electrode weakens hole extraction efficiency.These reduces the device's performance.To improve this,a semiconductor photodetector based on fluorine-doped tin oxide(FTO)/dense titanium dioxide(c-TiO_(2))/mesoporous titanium dioxide(m-TiO_(2))/CsPbBr_(3) QDs/CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs/C struc-ture was studied.By adjusting the Br-:I-ratio,the synthesized CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs showed an adjustable band gap width of 2.284-2.394 eV.And forming a typeⅡband structure with CsPbBr_(3) QDs,which reduced the valence band offset between the active layer and the carbon electrode,this promoted carrier extraction and reduced non-radiative recombination rate.Compared with the original device(the photosensitive layer is CsPbBr_(3) QDs),the performance of the photodetector based on the CsPbBr_(3) QDs/CsPbBr2I QDs heterostructure is significantly improved,the responsivity(R)increased by 73%,the specific detectivity rate(D^(*))increased from 6.98×10^(12) to 3.19×10^(13) Jones,the on/off ratio reached 106.This study provides a new idea for the development of semiconductor tandem detectors.展开更多
The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology char...The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology characterization.The results revealed that a huge difference of corrosion resistance between imported and domestic 6061 aluminum alloys in HCl solution and gas acid mist experiments mainly was attributed to the different size and amount of Al_(15)(Fe,Mn)_(3)Si_(2).The corrosion resistance of domestic 6061 alloy in dry/wet semiconductor electronic special gas environments was worse than that of imported aluminum alloy,and there are great differences in the corrosion mechanism of 6061 alloy caused by the second phase in the two dry/wet environments.And the corrosion resistance of the hard anodized alumina film was closely related to the microscopic morphology of holes.The vertical and elongatedα-Al_(15)(Mn,Fe)_(3)Si_(2) phase was formed in the rolled aluminum alloy that has been rolled perpendicular to the surface of the substrate.Compared to the horizontal long hole,the longitudinal long holes generated by the verticalα-Al_(15)(Mn,Fe)_(3)Si_(2) phase will enable the corrosive medium to reach the substrate rapidly,which significantly weakens the corrosion resistance of the hard anodized film.展开更多
TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have desig...TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have designed two-dimensional semiconductor TiOS materials using swarm intelligence algorithms combined with first-principles calculations.Three stable low-energy structures with space groups of P2_(1)/m,P3m1 and P2_(1)/c are identified.Among these structures,the Janus P3m1 phase is a direct bandgap semiconductor,while the P2_(1)/m and P2_(1)/c phases are indirect bandgap semiconductors.Utilizing the accurate hybrid density functional HSE06 method,the band gaps of the three structures are calculated to be 2.34 eV(P2_(1)/m),2.24 eV(P3m1)and 3.22 eV(P2_(1)/c).Optical calculations reveal that TiOS materials exhibit a good light-harvesting capability in both visible and ultraviolet spectral ranges.Moreover,the photocatalytic calculations also indicate that both P2_(1)/m and P3m1 TiOS can provide a strong driving force for converting H_(2)O to H_(2)and O_(2)in an acidic environment with pH=0.The structural stabilities,mechanical properties,electronic structures and hydrogen evolution reaction activities are also discussed in detail.Our research suggests that two-dimensional TiOS materials have potential applications in both semiconductor devices and photocatalysis.展开更多
Promoting the high penetration of renewable energies like photovoltaic(PV)systems has become an urgent issue for expanding modern power grids and has accomplished several challenges compared to existing distribution g...Promoting the high penetration of renewable energies like photovoltaic(PV)systems has become an urgent issue for expanding modern power grids and has accomplished several challenges compared to existing distribution grids.This study measures the effectiveness of the Puma optimizer(PO)algorithm in parameter estimation of PSC(perovskite solar cells)dynamic models with hysteresis consideration considering the electric field effects on operation.The models used in this study will incorporate hysteresis effects to capture the time-dependent behavior of PSCs accurately.The PO optimizes the proposed modified triple diode model(TDM)with a variable voltage capacitor and resistances(VVCARs)considering the hysteresis behavior.The suggested PO algorithm contrasts with other wellknown optimizers from the literature to demonstrate its superiority.The results emphasize that the PO realizes a lower RMSE(Root mean square errors),which proves its capability and efficacy in parameter extraction for the models.The statistical results emphasize the efficiency and supremacy of the proposed PO compared to the other well-known competing optimizers.The convergence rates show good,fast,and stable convergence rates with lower RMSE via PO compared to the other five competitive optimizers.Moreover,the lowermean realized via the PO optimizer is illustrated by the box plot for all optimizers.展开更多
基金funded by The Vietnam Ministry of Education and Training under project number B2024-BKA-12.
文摘Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.
基金supported by the National Natural Science Foundation of China(62374150)Natural Science Foundation of Henan(242300421216)+3 种基金C.Zheng acknowledges the support of China Postdoctoral Science Foundation(Grant No.2023TQ0296)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20232389)Y.Xie acknowledges the support of National Natural Science Foundation of China(62074011,62134008)Beijing Outstanding Young Scientist Program(JWZQ20240102009).
文摘Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.
基金Project supported by the National Natural Science Foundation of China(Nos.11872105,12072022,11911530176,and 12202039)。
文摘In this paper,the dispersion,attenuation,and bandgap characteristics of in-plane coupled Bloch waves in one-dimensional piezoelectric semiconductor(PSC)phononic crystals are investigated,emphasizing the influence of positive-negative(PN)junctions.Unlike piezoelectric phononic crystals,the coupled Bloch waves in PSC phononic crystals are attenuated due to their semiconductor properties,and thus the solution of Bloch waves becomes more complicated.The transfer matrix of the phononic crystal unit cell is obtained using the state transfer equation.By applying the Bloch theorem for periodic structures,the dispersion relation of the coupled Bloch waves is derived,and the dispersion,attenuation,and bandgap are obtained in the complex wave number domain.It is found that the influence of the PN junction cannot be neglected.Moreover,the effects of the PN junction under different apparent wave numbers and steady-state carrier concentrations are provided.This indicates the feasibility of adjusting the propagation characteristics of Bloch waves through the regulation of the PN heterojunction.
基金supported by the Singapore Ministry of Education(MOE)Academic Research Fund(AcRF)Tier 1(Nos.RG145/23 and RG78/24)the National Natural Science Foundation of China(No.U24A2005)Ningbo Natural Science Foundation(No.2024J183)。
文摘To address the urgent demand for the miniaturization and multifunctional integration of high-frequency Rayleigh surface wave devices in 5G communication technology,the propagation characteristics of Rayleigh surface waves in an elastic half-space attached by a nanoscale piezoelectric semiconductor(PSC)thin layer with flexoelectricity and size-effects are systematically investigated.Based on the Hamiltonian principle,the elastic dynamic equations and Gauss's theorem of electrostatics are obtained.The eigenvalue problem is numerically solved with a genetic algorithm in MATLAB,and the dispersion properties are obtained.The effects of various key factors,including the flexoelectricity,inertia gradients,strain gradients,electric field gradients,PSC layer thickness,steady-state carrier concentration,and bias electric fields,on the propagation and attenuation characteristics of Rayleigh surface waves are analyzed.The results demonstrate that the increases in the flexoelectric coefficient and strain gradient characteristic length lead to an increase in the real part of the complex phase velocity,while the increases in the inertia gradient characteristic length,electric field gradient characteristic length,PSC layer thickness,and steady-state carrier concentration result in a decrease.Additionally,the bias electric fields significantly influence the Rayleigh surface wave attenuation.The present findings are crucial for the accurate property evaluation of miniaturized highfrequency Rayleigh wave devices,and provide valuable theoretical support for their design and optimization.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12472155)the Science Research Project of Hebei Education Department of China(No.BJK2022055)+2 种基金the“333 Talents Project”of Hebei Province of China(No.C20231111)the Natural Science Foundation of Hebei Province of China(Nos.A2024210002 and A2023210064)the S&T Program of Hebei Province of China(No.225676162GH)。
文摘This study aims to present exact multi-field coupling modeling and analysis of a simply-supported rectangular piezoelectric semiconductor(PSC)plate.Under the linear assumption of drift-diffusion current for a small electron concentration perturbation,the governing equations are solved by extending the classical Stroh formalism to involve all the physical fields of PSCs.The general solutions are obtained and then utilized to analyze three-dimensional(3D)problems of static deformation and free vibration of the PSC plate.To investigate the multi-physics interactions along the plate thickness,the distribution forms of electromechanical fields and electron concentration perturbation are given exactly,which are helpful for the development of the PSC plate theory.The differences between the PSC and purely piezoelectric as well as purely elastic counterparts are emphasized,in the context of evaluating the material performances with changing initial electron concentration.The results demonstrate that the PSC coupling exists only within a specific range of the initial electron concentration,where it exhibits a transition from the piezoelectric characteristics to the elastic ones.In addition,the dependence of coupling behaviors on the plate thickness is clarified.These results can not only be benchmarks in the development of PSC plate theories or other numerical methods,but also be guidance for the design of plate-based PSC devices.
基金supported by the National Natural Science Foundation of China(No.12272353)the Postdoctoral Research Grant in Henan Province of China(No.202003091)the Key Scientific Research Projects in Colleges and Universities of Henan Province of China(No.22A130008)。
文摘The fracture mechanics theory posits that cracks induce strain energy concentration near their tips in structural components,generating localized flexibility that impedes crack propagation.Theoretically,cracks are represented as dimensionless,massless spring models,effectively capturing crack characteristics and cross-sectional properties at the crack location.Leveraging this spring-based representation,this study establishes an open-crack model for a one-dimensional(1D)piezoelectric semiconductor(PSC)curved beam under dynamic loading.This model enables the investigation of vibration characteristics in cracked structures.The analytical solutions for the electromechanical fields of the beam are derived using the differential operator method,and the natural frequencies together with the corresponding generalized mode shapes of the beam are determined analytically.Furthermore,the effects of the crack parameters on the natural vibration characteristics of the PSC curved beam are analyzed.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12302202)the Hebei Natural Science Foundation of China(No.A2023210040)+1 种基金the Science and Technology Project of Hebei Education Department of China(No.BJ2025005)the Hebei Provincial Department of Human Resources and Social Security of China(No.C20220324)。
文摘In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formalism and dual-variable and position(DVP)method,the general solution of the coupled fields for the Lamb wave is derived,and then the dispersion equation is obtained by the application of the boundary conditions.First,the influence of semiconducting properties on the dispersion behavior of the Lamb wave in a single-layer PSC plate is analyzed.Then,the propagation characteristics of the Lamb wave in a sandwich plate are investigated in detail.The numerical results show that the wave speed and attenuation depend on the stacking sequence,layer thickness,and initial carrier density,the Lamb wave can propagate without a cut-off frequency in both the homogeneous and multilayer PSC plates due to the semiconducting properties,and the Lamb wave without attenuation can be achieved by carefully selecting the semiconductor property in the upper and lower layers.These new features could be very helpful as theoretical guidance for the design and performance optimization of PSC devices.
基金supported by the National Natural Science Foundation of China(Grant number W2432035)financial support from the EPSRC SWIMS(EP/V039717/1)+3 种基金Royal Society(RGS\R1\221009 and IEC\NSFC\211201)Leverhulme Trust(RPG-2022-263)Ser Cymru programme–Enhancing Competitiveness Equipment Awards 2022-23(MA/VG/2715/22-PN66)the financial support from Kingdom of Saudi Arabia Ministry of Higher Education.
文摘Electrical energy is essential for modern society to sustain economic growths.The soaring demand for the electrical energy,together with an awareness of the environmental impact of fossil fuels,has been driving a shift towards the utilization of solar energy.However,traditional solar energy solutions often require extensive spaces for a panel installation,limiting their practicality in a dense urban environment.To overcome the spatial constraint,researchers have developed transparent photovoltaics(TPV),enabling windows and facades in vehicles and buildings to generate electric energy.Current TPV advancements are focused on improving both transparency and power output to rival commercially available silicon solar panels.In this review,we first briefly introduce wavelength-and non-wavelengthselective strategies to achieve transparency.Figures of merit and theoretical limits of TPVs are discussed to comprehensively understand the status of current TPV technology.Then we highlight recent progress in different types of TPVs,with a particular focus on solution-processed thin-film photovoltaics(PVs),including colloidal quantum dot PVs,metal halide perovskite PVs and organic PVs.The applications of TPVs are also reviewed,with emphasis on agrivoltaics,smart windows and facades.Finally,current challenges and future opportunities in TPV research are pointed out.
基金Supported by Bissell Distinguished Professor Endowment Fund at UNC-Charlotte。
文摘Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.
文摘Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.
基金National Natural Science Foundation of China(12002196,12102140)。
文摘Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.
基金Supported by the National Key Research and Development Program of China(2021YFB2012601)National Natural Science Foundation of China(12204109)+1 种基金Science and Technology Innovation Plan of Shanghai Science and Technology Commission(21JC1400200)Higher Education Indus⁃try Support Program of Gansu Province(2022CYZC-06)。
文摘Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.
基金supported by the National Key R&D Program of China(Grant No.2022YFA1405100)Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-030)+3 种基金the Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures(Grant No.JZHKYPT-2021-08)GS was supported in part by the Innovation Program for Quantum Science and Technology(Grant No.2024ZD03005)the National Natural Science Foundation of China(Grant No.12447101)Chinese Academy of Sciences.
文摘Realizing ferromagnetic semiconductors with high Curie temperature TC is still a challenge in spintronics.Recent experiments have reported two-dimensional(2D)room temperature ferromagnetic metals,such as monolayer Cr_(3)Te_(6).In this paper,through density functional theory(DFT)calculations,we propose a method to obtain 2D high TC ferromagnetic semiconductors through element replacement in these ferromagnetic metals.We predict that monolayer(Cr_(4/6),Mo_(2/6))_(3)Te_(6),created via element replacement in monolayer Cr_(3)Te_(6),is a room-temperature ferromagnetic semiconductor exhibiting a band gap of 0.34 eV and a TC of 384 K.Our analysis reveals that the metal-to-semiconductor transition stems from the synergistic interplay of Mo-induced lattice distortion,which resolves band overlap,and the electronic contributions of Mo dopants,which further drive the formation of a distinct band gap.The origin of the high TC is traced to strong superexchange coupling between magnetic ions,analyzed via the superexchange model with DFT and Wannier function calculations.Considering the fast developments in fabrication and manipulation of 2D materials,our theoretical results propose an approach to explore high-temperature ferromagnetic semiconductors derived from experimentally obtained 2D high-temperature ferromagnetic metals through element replacement.
文摘All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have attracted extensive attention in photoelectric detection for their excellent photoelectric properties and stability.However,the CsPbBr_(3) quantum dot film exhibits a high non-radiative recombination rate,and the mismatch in energy levels with the carbon electrode weakens hole extraction efficiency.These reduces the device's performance.To improve this,a semiconductor photodetector based on fluorine-doped tin oxide(FTO)/dense titanium dioxide(c-TiO_(2))/mesoporous titanium dioxide(m-TiO_(2))/CsPbBr_(3) QDs/CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs/C struc-ture was studied.By adjusting the Br-:I-ratio,the synthesized CsPbBr_(x)I_(3-x)(x=2,1.5,1)QDs showed an adjustable band gap width of 2.284-2.394 eV.And forming a typeⅡband structure with CsPbBr_(3) QDs,which reduced the valence band offset between the active layer and the carbon electrode,this promoted carrier extraction and reduced non-radiative recombination rate.Compared with the original device(the photosensitive layer is CsPbBr_(3) QDs),the performance of the photodetector based on the CsPbBr_(3) QDs/CsPbBr2I QDs heterostructure is significantly improved,the responsivity(R)increased by 73%,the specific detectivity rate(D^(*))increased from 6.98×10^(12) to 3.19×10^(13) Jones,the on/off ratio reached 106.This study provides a new idea for the development of semiconductor tandem detectors.
基金financially supported by the Program of the National Natural Science Foundation of China(Grant No.52371055)the Young Elite Scientist Sponsorship Program Cast(Grant No.YESS20200139)the Basic Scientific Research Project of Liaoning Provincial Department of Education(Grant No.JYTMS20230618)。
文摘The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology characterization.The results revealed that a huge difference of corrosion resistance between imported and domestic 6061 aluminum alloys in HCl solution and gas acid mist experiments mainly was attributed to the different size and amount of Al_(15)(Fe,Mn)_(3)Si_(2).The corrosion resistance of domestic 6061 alloy in dry/wet semiconductor electronic special gas environments was worse than that of imported aluminum alloy,and there are great differences in the corrosion mechanism of 6061 alloy caused by the second phase in the two dry/wet environments.And the corrosion resistance of the hard anodized alumina film was closely related to the microscopic morphology of holes.The vertical and elongatedα-Al_(15)(Mn,Fe)_(3)Si_(2) phase was formed in the rolled aluminum alloy that has been rolled perpendicular to the surface of the substrate.Compared to the horizontal long hole,the longitudinal long holes generated by the verticalα-Al_(15)(Mn,Fe)_(3)Si_(2) phase will enable the corrosive medium to reach the substrate rapidly,which significantly weakens the corrosion resistance of the hard anodized film.
基金supported by the National Natural Science Foundation of China(Grant Nos.52272219 and U1904612)the Natural Science Foundation of Henan Province(Grant No.242300421191).
文摘TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have designed two-dimensional semiconductor TiOS materials using swarm intelligence algorithms combined with first-principles calculations.Three stable low-energy structures with space groups of P2_(1)/m,P3m1 and P2_(1)/c are identified.Among these structures,the Janus P3m1 phase is a direct bandgap semiconductor,while the P2_(1)/m and P2_(1)/c phases are indirect bandgap semiconductors.Utilizing the accurate hybrid density functional HSE06 method,the band gaps of the three structures are calculated to be 2.34 eV(P2_(1)/m),2.24 eV(P3m1)and 3.22 eV(P2_(1)/c).Optical calculations reveal that TiOS materials exhibit a good light-harvesting capability in both visible and ultraviolet spectral ranges.Moreover,the photocatalytic calculations also indicate that both P2_(1)/m and P3m1 TiOS can provide a strong driving force for converting H_(2)O to H_(2)and O_(2)in an acidic environment with pH=0.The structural stabilities,mechanical properties,electronic structures and hydrogen evolution reaction activities are also discussed in detail.Our research suggests that two-dimensional TiOS materials have potential applications in both semiconductor devices and photocatalysis.
基金supported via funding from Prince Sattam Bin Abdulaziz University project number(PSAU/2025/R/1446).
文摘Promoting the high penetration of renewable energies like photovoltaic(PV)systems has become an urgent issue for expanding modern power grids and has accomplished several challenges compared to existing distribution grids.This study measures the effectiveness of the Puma optimizer(PO)algorithm in parameter estimation of PSC(perovskite solar cells)dynamic models with hysteresis consideration considering the electric field effects on operation.The models used in this study will incorporate hysteresis effects to capture the time-dependent behavior of PSCs accurately.The PO optimizes the proposed modified triple diode model(TDM)with a variable voltage capacitor and resistances(VVCARs)considering the hysteresis behavior.The suggested PO algorithm contrasts with other wellknown optimizers from the literature to demonstrate its superiority.The results emphasize that the PO realizes a lower RMSE(Root mean square errors),which proves its capability and efficacy in parameter extraction for the models.The statistical results emphasize the efficiency and supremacy of the proposed PO compared to the other well-known competing optimizers.The convergence rates show good,fast,and stable convergence rates with lower RMSE via PO compared to the other five competitive optimizers.Moreover,the lowermean realized via the PO optimizer is illustrated by the box plot for all optimizers.
