Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and op...Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.展开更多
Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To sp...Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To speed up the selection process,this work focuses on interpretable feature learning and band gap prediction for titanium-based semiconductors.First,titanium compounds were selected from the Materials Project database by machine learning,and elemental features were extracted using the Magpie descriptors.Then,principal component analysis(PCA)was applied to reduce the data dimensionality,creating a representative dataset.Meantime,heatmaps and SHAP(SHapley Additive exPlanations)methods were used to demonstrate the influence of key features such as electronegativity,covalent radius,period number,and unit cell volume on the bandgap,understanding the relationship between the material’s properties and performance.After comparing different machine learning models,including Random Forest(RF),Support Vector Machines(SVM),Linear Regression(LR),and Gradient Boosting Regression(GBR),the RF was found to be the most accurate for band gap prediction.Finally,the model performance was improved through parameter tuning,showing high accuracy.These findings provide strong data support and design guidance for the development of materials in fields like photocatalysis and solar cells.展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-arme...Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N_(2)for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction.After blending 2DPP4N_(2)with polymer semiconductors such as PDPP4T(p-type),PDPP3T(ambipolar)and N2200(n-type),we prepared various patterns with a resolution of 6μm by irradiating through a photo-mask with 254 nm UV light for 160 s.Notably,the interchain packing and surface morphology remained nearly unchanged after photo-patterning,as characterized by atomic force microscopy(AFM)and grazing incidence wide-angle X-ray scattering(GIWAXS).Consequently,the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film.These results reveal that 2DPP4N_(2)is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage cur...Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.展开更多
Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep...Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.展开更多
Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical cra...Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.展开更多
We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The en...We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.展开更多
Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for...Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes （LEDs）, and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.展开更多
The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite...The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.展开更多
Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The fre...Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping（CBH） model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N（EF） are valued at different frequencies.Dielectric constant ε1（ω,T） and dielectric loss ε2（ω,T） are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus（M’’）is found to follow the Arrhenius law.展开更多
Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compos...Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.展开更多
In this paper,Love waves propagating in a piezoelectric semiconductor(PSC)layered structure are investigated,where a PSC thin film is perfectly bonded on an elastic dielectric half-space.The dispersion equations are d...In this paper,Love waves propagating in a piezoelectric semiconductor(PSC)layered structure are investigated,where a PSC thin film is perfectly bonded on an elastic dielectric half-space.The dispersion equations are derived analytically.The influence of semiconducting properties on the propagation characteristics is examined in detail.Numerical results show that the semiconducting effect reduces the propagation speed,and that the Love waves can propagate with a speed slightly higher than the shear wave speed of the elastic dielectric half-space.The wave speed and attenuation significantly depend on the steady-state carrier density and the thickness of the PSC thin film.It is also found that when the horizontal biasing electric field is larger than the critical value(corresponding to the zero attenuation),the wave amplitude is increased.These findings are useful for the analysis and design of various surface wave devices made of PSC.展开更多
Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical...Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.展开更多
The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The e...The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The experiment reveals that OSITs have obtained a low driving voltage, high current density and high switch speed such as I_ DS = 1.2×10 -6 A/mm2, and the degree of 1 000 Hz. The OSITs have excellent operation characteristics of typical static induction transistors.展开更多
In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formali...In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formalism and dual-variable and position(DVP)method,the general solution of the coupled fields for the Lamb wave is derived,and then the dispersion equation is obtained by the application of the boundary conditions.First,the influence of semiconducting properties on the dispersion behavior of the Lamb wave in a single-layer PSC plate is analyzed.Then,the propagation characteristics of the Lamb wave in a sandwich plate are investigated in detail.The numerical results show that the wave speed and attenuation depend on the stacking sequence,layer thickness,and initial carrier density,the Lamb wave can propagate without a cut-off frequency in both the homogeneous and multilayer PSC plates due to the semiconducting properties,and the Lamb wave without attenuation can be achieved by carefully selecting the semiconductor property in the upper and lower layers.These new features could be very helpful as theoretical guidance for the design and performance optimization of PSC devices.展开更多
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
基金funded by The Vietnam Ministry of Education and Training under project number B2024-BKA-12.
文摘Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.
文摘Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To speed up the selection process,this work focuses on interpretable feature learning and band gap prediction for titanium-based semiconductors.First,titanium compounds were selected from the Materials Project database by machine learning,and elemental features were extracted using the Magpie descriptors.Then,principal component analysis(PCA)was applied to reduce the data dimensionality,creating a representative dataset.Meantime,heatmaps and SHAP(SHapley Additive exPlanations)methods were used to demonstrate the influence of key features such as electronegativity,covalent radius,period number,and unit cell volume on the bandgap,understanding the relationship between the material’s properties and performance.After comparing different machine learning models,including Random Forest(RF),Support Vector Machines(SVM),Linear Regression(LR),and Gradient Boosting Regression(GBR),the RF was found to be the most accurate for band gap prediction.Finally,the model performance was improved through parameter tuning,showing high accuracy.These findings provide strong data support and design guidance for the development of materials in fields like photocatalysis and solar cells.
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
基金supported by the National Natural Science Foundation of China(No.22205242)。
文摘Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N_(2)for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction.After blending 2DPP4N_(2)with polymer semiconductors such as PDPP4T(p-type),PDPP3T(ambipolar)and N2200(n-type),we prepared various patterns with a resolution of 6μm by irradiating through a photo-mask with 254 nm UV light for 160 s.Notably,the interchain packing and surface morphology remained nearly unchanged after photo-patterning,as characterized by atomic force microscopy(AFM)and grazing incidence wide-angle X-ray scattering(GIWAXS).Consequently,the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film.These results reveal that 2DPP4N_(2)is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金supported by National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(No.RS-2023-00260527,RS-2024-00407282,RS-2025-00557667)supported by Hanyang University Industry-University Cooperation Foundation(No.202400000003943)supported by Korea Planning&Evaluation Institute of Industrial Technology(KEIT)funded by South Korean Ministry of Trade,Industry and Energy(MOTIE)(No.RS-2025-25454815,RS-2025-02308064,20017382)。
文摘Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12472155)the Natural Science Foundation of Hebei Province of China(No.A2024210002)。
文摘Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.
基金Project supported by the Guangdong Basic and Applied Basic Research Foundation of China(Nos.2022B1515020099 and 2024A1515240026)the National Natural Science Foundation of China(No.12372147)the Fundamental Research Funds for the Central Universities of China(No.HIT.OCEF.2024019)。
文摘Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.
基金This work was supported by the National Natural Science Foundation of China （No.60776039 and No.60406005）, the Natural Science Foundation of Beijing （No.3062016）, and the School Foundation of Beijing Jiaotong University.
文摘We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11374092,61474040,61574054,and 61505051)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,Chinathe Science and Technology Department of Hunan Province,China(Grant No.2014FJ2001)
文摘Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes （LEDs）, and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.
文摘The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.
文摘Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping（CBH） model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N（EF） are valued at different frequencies.Dielectric constant ε1（ω,T） and dielectric loss ε2（ω,T） are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus（M’’）is found to follow the Arrhenius law.
基金supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2020M3H4A3081867)the industry technology R&D program (20006400) funded by the Ministry of Trade,Industry and Energy (MOTIE, Korea)+2 种基金the project number 20010402 funded by the Ministry of Trade,Industry and Energy (MOTIE, Korea)the Industry Technology R&D program (#20010371) funded by the Ministry of Trade,Industry and Energy (MOTIE, Republic of Korea)the Technology Innovation Program (20017382) funded By the Ministryof Trade,Industry and Energy (MOTIE, Korea)
文摘Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.
基金supported by the National Natural Science Foundation of China(No.U21A20430)the Youth Fund Project of Hebei Education Department of China(No.QN2022040)the Hebei Provincial Department of Human Resources and Social Security of China(No.C20220324).
文摘In this paper,Love waves propagating in a piezoelectric semiconductor(PSC)layered structure are investigated,where a PSC thin film is perfectly bonded on an elastic dielectric half-space.The dispersion equations are derived analytically.The influence of semiconducting properties on the propagation characteristics is examined in detail.Numerical results show that the semiconducting effect reduces the propagation speed,and that the Love waves can propagate with a speed slightly higher than the shear wave speed of the elastic dielectric half-space.The wave speed and attenuation significantly depend on the steady-state carrier density and the thickness of the PSC thin film.It is also found that when the horizontal biasing electric field is larger than the critical value(corresponding to the zero attenuation),the wave amplitude is increased.These findings are useful for the analysis and design of various surface wave devices made of PSC.
基金financially supported by the National Basic Research Program of China (No.2011CBA00600)the National Natural Science Foundation of China (No.61275025)
文摘Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.
基金Sponsored by the Science and Technology Ministry of Heilongjiang Province(Grant No.GC04A107).
文摘The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The experiment reveals that OSITs have obtained a low driving voltage, high current density and high switch speed such as I_ DS = 1.2×10 -6 A/mm2, and the degree of 1 000 Hz. The OSITs have excellent operation characteristics of typical static induction transistors.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12302202)the Hebei Natural Science Foundation of China(No.A2023210040)+1 种基金the Science and Technology Project of Hebei Education Department of China(No.BJ2025005)the Hebei Provincial Department of Human Resources and Social Security of China(No.C20220324)。
文摘In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formalism and dual-variable and position(DVP)method,the general solution of the coupled fields for the Lamb wave is derived,and then the dispersion equation is obtained by the application of the boundary conditions.First,the influence of semiconducting properties on the dispersion behavior of the Lamb wave in a single-layer PSC plate is analyzed.Then,the propagation characteristics of the Lamb wave in a sandwich plate are investigated in detail.The numerical results show that the wave speed and attenuation depend on the stacking sequence,layer thickness,and initial carrier density,the Lamb wave can propagate without a cut-off frequency in both the homogeneous and multilayer PSC plates due to the semiconducting properties,and the Lamb wave without attenuation can be achieved by carefully selecting the semiconductor property in the upper and lower layers.These new features could be very helpful as theoretical guidance for the design and performance optimization of PSC devices.
