Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and op...Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturiza...Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].展开更多
Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconduc...Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconductors(ISCs)are considered the ideal building block to design and govern the functions of FPDs owing to their superior electrical and optical properties.Recent developments in wearable technology of ISCs,especially in fiber form factor,have driven the creation of various FPDs with smart capabilities,from light sensing,information interfacing,to sophisticated logic operating,revolutionizing human-machine interaction paradigms in many emerging fields.Herein,we present a comprehensive review of the recent progress of ISCbased FPDs.Firstly,key design principles for ISC-based FPDs are explored,encompassing material selection,fabrication technologies,device architectures,and textile integration strategies.Then,how defect engineering,alignment engineering,and heterojunction engineering of ISCs can control the optoelectronic performance of FPDs is examined.Following this,potential wearable applications of ISC-based FPDs in optical communication,image sensing,and health monitoring are analyzed.Finally,the challenges and perspectives for the design of high-performance ISC-based FPDs are outlined.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The en...We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.展开更多
Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for...Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes （LEDs）, and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.展开更多
The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite...The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.展开更多
Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The fre...Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping（CBH） model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N（EF） are valued at different frequencies.Dielectric constant ε1（ω,T） and dielectric loss ε2（ω,T） are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus（M’’）is found to follow the Arrhenius law.展开更多
Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compos...Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.展开更多
In this paper,Love waves propagating in a piezoelectric semiconductor(PSC)layered structure are investigated,where a PSC thin film is perfectly bonded on an elastic dielectric half-space.The dispersion equations are d...In this paper,Love waves propagating in a piezoelectric semiconductor(PSC)layered structure are investigated,where a PSC thin film is perfectly bonded on an elastic dielectric half-space.The dispersion equations are derived analytically.The influence of semiconducting properties on the propagation characteristics is examined in detail.Numerical results show that the semiconducting effect reduces the propagation speed,and that the Love waves can propagate with a speed slightly higher than the shear wave speed of the elastic dielectric half-space.The wave speed and attenuation significantly depend on the steady-state carrier density and the thickness of the PSC thin film.It is also found that when the horizontal biasing electric field is larger than the critical value(corresponding to the zero attenuation),the wave amplitude is increased.These findings are useful for the analysis and design of various surface wave devices made of PSC.展开更多
Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical...Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.展开更多
The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The e...The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The experiment reveals that OSITs have obtained a low driving voltage, high current density and high switch speed such as I_ DS = 1.2×10 -6 A/mm2, and the degree of 1 000 Hz. The OSITs have excellent operation characteristics of typical static induction transistors.展开更多
This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AXB1-xC epilayers of ternary III-V semiconductor alloys. Using these expressions, it identifies quantitatively t...This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AXB1-xC epilayers of ternary III-V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.展开更多
The heteroepitaxy of semiconductor thin films is a cornerstone of semiconductor devices and is naturally preferred to grow on matched substrates from the view point of material epitaxy. However, the heteroepitaxy is a...The heteroepitaxy of semiconductor thin films is a cornerstone of semiconductor devices and is naturally preferred to grow on matched substrates from the view point of material epitaxy. However, the heteroepitaxy is always performed on mismatched substrates due to the limited choices of mature substrates, which constrains the quality of semiconductor thin films.展开更多
Motivated by the success of graphene research,atomically-thin transition metal dichalcogenide(TMDC)semiconductors are considered as promising field-effect transistor(FET)channel materials for fundamental research and ...Motivated by the success of graphene research,atomically-thin transition metal dichalcogenide(TMDC)semiconductors are considered as promising field-effect transistor(FET)channel materials for fundamental research and potential applications.Bridging atomically-thin TMDC channels to external circuitry using metallic leads is one of the most critical steps towards high-performance devices and cutting-edge materials physics research.展开更多
Since the first report of diketopyrrolopyrrole(DPP)-based conjugated polymers for organic thin-film transistors(OTFTs),these polymers have attracted great attention as representative semiconductors in high-performance...Since the first report of diketopyrrolopyrrole(DPP)-based conjugated polymers for organic thin-film transistors(OTFTs),these polymers have attracted great attention as representative semiconductors in high-performance OTFTs.Through unremitting efforts in molecular-structure regulation and device optimization,significant mobilities exceeding 10 cm2·V–1·s–1 have been achieved in OTFTs,greatly promoting the applied development of organic circuits.In this review,we summarize our progress in molecular design,synthesis and solution-processing of DPP-based conjugated polymers for OTFT devices and circuits,focusing on the roles of design strategies,synthesis methods and processing techniques.Furthermore,the remaining issues and future outlook in the field are briefly discussed.展开更多
In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly...In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.展开更多
Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologie...Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.展开更多
基金funded by The Vietnam Ministry of Education and Training under project number B2024-BKA-12.
文摘Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
文摘Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].
基金financially supported by the National Key R&D Program of China(2023YFE0210800)National Natural Science Foundation of China(U21A2069,22305088)+4 种基金Natural Science Foundation of Hubei Province(JCZRQN202400929)Shenzhen Science and Technology Program(JCYJ20240813153403005,JCYJ20220818102215033)Guangdong Basic and Applied Basic Research Foundation(2023B1515120041)Open Research Fund of Suzhou Laboratory(SZLAB-1508-2024-ZD013)Guangdong HUST Industrial Technology Research Institute,Guangdong Provincial Key Laboratory of Manufacturing Equipment Digitization(2023B1212060012)。
文摘Fiber photodetectors(FPDs)with high deformability,flexible designability,and seamless integrability with everyday textiles hold tremendous potential for the nextgeneration wearable optoelectronics.Inorganic semiconductors(ISCs)are considered the ideal building block to design and govern the functions of FPDs owing to their superior electrical and optical properties.Recent developments in wearable technology of ISCs,especially in fiber form factor,have driven the creation of various FPDs with smart capabilities,from light sensing,information interfacing,to sophisticated logic operating,revolutionizing human-machine interaction paradigms in many emerging fields.Herein,we present a comprehensive review of the recent progress of ISCbased FPDs.Firstly,key design principles for ISC-based FPDs are explored,encompassing material selection,fabrication technologies,device architectures,and textile integration strategies.Then,how defect engineering,alignment engineering,and heterojunction engineering of ISCs can control the optoelectronic performance of FPDs is examined.Following this,potential wearable applications of ISC-based FPDs in optical communication,image sensing,and health monitoring are analyzed.Finally,the challenges and perspectives for the design of high-performance ISC-based FPDs are outlined.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金This work was supported by the National Natural Science Foundation of China （No.60776039 and No.60406005）, the Natural Science Foundation of Beijing （No.3062016）, and the School Foundation of Beijing Jiaotong University.
文摘We investigate the electronic and magnetic properties of the diluted magnetic semiconductors Zn1-xMnxS（001） thin films with different Mn doping concentrations using the total energy density functional theory. The energy stability and density of states of a single Mn atom and two Mn atoms at various doped configurations and different magnetic coupling state were calculated. Different doping configurations have different degrees of p-d hybridization, and because Mn atoms are located in different crystal-field environment, the 3d projected densities of states peak splitting of different Mn doping configurations are quite different. In the two Mn atoms doped, the calculated ground states of three kinds of stable configurations are anti-ferromagnetic state. We analyzed the 3d density of states diagram of three kinds of energy stability configurations with the two Mn atoms in different magnetic coupling state. When the two Mn atoms are ferromagnetic coupling, due to d-d electron interactions, density of states of anti-bonding state have significant broadening peaks. As the concentration of Mn atoms increases, there is a tendency for Mn atoms to form nearest neighbors and cluster around S. For such these configurations, the antiferromagnetic coupling between Mn atoms is energetically more favorable.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11374092,61474040,61574054,and 61505051)the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province,Chinathe Science and Technology Department of Hunan Province,China(Grant No.2014FJ2001)
文摘Atomically thin two-dimensional （2D） layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes （LEDs）, and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices.
文摘The influence of intermixing heterogeneous regions that have different electrical properties from the base materials on van der Pauw measurement values was theoretically studied by computer simulation using the finite-element method. The measurement samples selected were thin films of inhomogeneous semiconductors. Calculated electrical properties, such as resistivity, carrier density, and mobility of the thin films, varied in predictable ways when heterogeneous regions were dispersed in wide ranges over the samples. On the other hand, the mobility of the thin films showed a different change when heterogeneous regions were locally concentrated in the measurement samples.
文摘Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping（CBH） model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N（EF） are valued at different frequencies.Dielectric constant ε1（ω,T） and dielectric loss ε2（ω,T） are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus（M’’）is found to follow the Arrhenius law.
基金supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2020M3H4A3081867)the industry technology R&D program (20006400) funded by the Ministry of Trade,Industry and Energy (MOTIE, Korea)+2 种基金the project number 20010402 funded by the Ministry of Trade,Industry and Energy (MOTIE, Korea)the Industry Technology R&D program (#20010371) funded by the Ministry of Trade,Industry and Energy (MOTIE, Republic of Korea)the Technology Innovation Program (20017382) funded By the Ministryof Trade,Industry and Energy (MOTIE, Korea)
文摘Since the first report of amorphous In–Ga–Zn–O based thin film transistors,interest in oxide semiconductors has grown.They offer high mobility,low off-current,low process temperature,and wide flexibility for compositions and processes.Unfortunately,depositing oxide semiconductors using conventional processes like physical vapor deposition leads to problematic issues,especially for high-resolution displays and highly integrated memory devices.Conventional approaches have limited process flexibility and poor conformality on structured surfaces.Atomic layer deposition(ALD)is an advanced technique which can provide conformal,thickness-controlled,and high-quality thin film deposition.Accordingly,studies on ALD based oxide semiconductors have dramatically increased recently.Even so,the relationships between the film properties of ALD-oxide semiconductors and the main variables associated with deposition are still poorly understood,as are many issues related to applications.In this review,to introduce ALD-oxide semiconductors,we provide:(a)a brief summary of the history and importance of ALD-based oxide semiconductors in industry,(b)a discussion of the benefits of ALD for oxide semiconductor deposition(in-situ composition control in vertical distribution/vertical structure engineering/chemical reaction and film properties/insulator and interface engineering),and(c)an explanation of the challenging issues of scaling oxide semiconductors and ALD for industrial applications.This review provides valuable perspectives for researchers who have interest in semiconductor materials and electronic device applications,and the reasons ALD is important to applications of oxide semiconductors.
基金supported by the National Natural Science Foundation of China(No.U21A20430)the Youth Fund Project of Hebei Education Department of China(No.QN2022040)the Hebei Provincial Department of Human Resources and Social Security of China(No.C20220324).
文摘In this paper,Love waves propagating in a piezoelectric semiconductor(PSC)layered structure are investigated,where a PSC thin film is perfectly bonded on an elastic dielectric half-space.The dispersion equations are derived analytically.The influence of semiconducting properties on the propagation characteristics is examined in detail.Numerical results show that the semiconducting effect reduces the propagation speed,and that the Love waves can propagate with a speed slightly higher than the shear wave speed of the elastic dielectric half-space.The wave speed and attenuation significantly depend on the steady-state carrier density and the thickness of the PSC thin film.It is also found that when the horizontal biasing electric field is larger than the critical value(corresponding to the zero attenuation),the wave amplitude is increased.These findings are useful for the analysis and design of various surface wave devices made of PSC.
基金financially supported by the National Basic Research Program of China (No.2011CBA00600)the National Natural Science Foundation of China (No.61275025)
文摘Rare earth element gadolinium-doped aluminum–zinc oxide（Gd–AZO） semiconductor thin film material was deposited on both silicon and glass substrate by radio frequency（RF） sputtering at room temperature.Electrical properties and microstructure of Gd–AZO thin film were mainly modulated by altering O2 partial pressure（OPP） during the RF sputtering process.Scanning electron microscope（SEM） and X-ray diffraction（XRD） test were carried out to uncover the microstructure variation trend with the sputtering OPP,and amorphous structure which is beneficial to large mass industry manufacture was also demonstrated by the XRD pattern.Transmittance in visible light spectrum implies the potential application for Gd–AZO to be used in transparent material field.Finally,bottom gate,top contact device structure thin film transistors（TFTs） with Gd–AZO thin film as the active channel layer were fabricated to verify the semiconductor availability of Gd–AZO thin film material.Besides,the Gd–AZO TFTs exhibit preferable transfer and output characteristics.
基金Sponsored by the Science and Technology Ministry of Heilongjiang Province(Grant No.GC04A107).
文摘The organic static induction transistors (OSITs) are fabricated by the method of evaporating and plating in a vacuum with copper phthalocyanine (CuPc) dye, and has a five layered structure of Au/CuPc/Al/CuPc/Au. The experiment reveals that OSITs have obtained a low driving voltage, high current density and high switch speed such as I_ DS = 1.2×10 -6 A/mm2, and the degree of 1 000 Hz. The OSITs have excellent operation characteristics of typical static induction transistors.
基金Project supported by the National Natural Science Foundation of China (Grant No 60572177)CAUC Foundation (Grant No 05yk27s)
文摘This paper derives the expressions for the ordering degree and the modulation factor of A and B atoms in AXB1-xC epilayers of ternary III-V semiconductor alloys. Using these expressions, it identifies quantitatively the alternating atom-enhanced planes, compositional modulations, atomic ordering degree on the group-III sublattices and the fine structure of NMR spectra.
文摘The heteroepitaxy of semiconductor thin films is a cornerstone of semiconductor devices and is naturally preferred to grow on matched substrates from the view point of material epitaxy. However, the heteroepitaxy is always performed on mismatched substrates due to the limited choices of mature substrates, which constrains the quality of semiconductor thin films.
文摘Motivated by the success of graphene research,atomically-thin transition metal dichalcogenide(TMDC)semiconductors are considered as promising field-effect transistor(FET)channel materials for fundamental research and potential applications.Bridging atomically-thin TMDC channels to external circuitry using metallic leads is one of the most critical steps towards high-performance devices and cutting-edge materials physics research.
基金financially supported by the National Key R&D Program of China(No.2018YFA0703200)the National Natural Science Foundation of China(Nos.U22A6002,91833306,21922511 and 51873216)+3 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB30000000)the CAS Project for Young Scientists in Basic Research(No.YSBR-053)the CAS-Croucher Funding Scheme for Joint Laboratoriesthe CAS Cooperation Project(No.121111KYSB20200036)。
文摘Since the first report of diketopyrrolopyrrole(DPP)-based conjugated polymers for organic thin-film transistors(OTFTs),these polymers have attracted great attention as representative semiconductors in high-performance OTFTs.Through unremitting efforts in molecular-structure regulation and device optimization,significant mobilities exceeding 10 cm2·V–1·s–1 have been achieved in OTFTs,greatly promoting the applied development of organic circuits.In this review,we summarize our progress in molecular design,synthesis and solution-processing of DPP-based conjugated polymers for OTFT devices and circuits,focusing on the roles of design strategies,synthesis methods and processing techniques.Furthermore,the remaining issues and future outlook in the field are briefly discussed.
基金Project Supported by the Innovation and Technology Fund ( ITF ) of The Government of The Hong Kong Special Administrative Region ( HK-SAR)China( Fund Grant Num ber:S/ P0 0 5 / 99)
文摘In order to achieve low cost high efficiency thin film solar cells,a novel Semiconductor Photovoltaic (PV) active material CuIn 1-x Ga x Se 2 (CIGS) and thin film Electro Deposition (ED) technology is explored.Firstly,the PV materials and technologies is investigated,then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported.These results shows that high quality CIGS polycrystalline thin films can be obtained by the ED method,in which the polycrystalline CIGS is definitely identified by the (112),(204,220) characteristic peaks of the tetragonal structure,the continuous CIGS thin film layers with particle average size of about 2μm of length and around 1 6μm of thickness.The thickness and solar grade quality of CIGS thin films can be produced with good repeatability.Discussion and analysis on the ED technique,CIGS energy band and sodium (Na) impurity properties,were also performed.The alloy CIGS exhibits not only increasing band gap with increasing x ,but also a change in material properties that is relevant to the device operation.The beneficial impurity Na originating from the low cost soda lime glass substrate becomes one prerequisite for high quality CIGS films.These novel material and technology are very useful for low cost high efficiency thin film solar cells and other devices.
基金supported by the National Natural Science Foundation of China(62374150)Natural Science Foundation of Henan(242300421216)+3 种基金C.Zheng acknowledges the support of China Postdoctoral Science Foundation(Grant No.2023TQ0296)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20232389)Y.Xie acknowledges the support of National Natural Science Foundation of China(62074011,62134008)Beijing Outstanding Young Scientist Program(JWZQ20240102009).
文摘Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.
