Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic a...Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.展开更多
Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respe...Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.展开更多
Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive en...Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.展开更多
The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology char...The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology characterization.The results revealed that a huge difference of corrosion resistance between imported and domestic 6061 aluminum alloys in HCl solution and gas acid mist experiments mainly was attributed to the different size and amount of Al_(15)(Fe,Mn)_(3)Si_(2).The corrosion resistance of domestic 6061 alloy in dry/wet semiconductor electronic special gas environments was worse than that of imported aluminum alloy,and there are great differences in the corrosion mechanism of 6061 alloy caused by the second phase in the two dry/wet environments.And the corrosion resistance of the hard anodized alumina film was closely related to the microscopic morphology of holes.The vertical and elongatedα-Al_(15)(Mn,Fe)_(3)Si_(2) phase was formed in the rolled aluminum alloy that has been rolled perpendicular to the surface of the substrate.Compared to the horizontal long hole,the longitudinal long holes generated by the verticalα-Al_(15)(Mn,Fe)_(3)Si_(2) phase will enable the corrosive medium to reach the substrate rapidly,which significantly weakens the corrosion resistance of the hard anodized film.展开更多
Flexoelectricity,an electromechanical coupling between strain gradient and electrical polarization in dielectrics or semiconductors,has attracted significant scientific interest.It is reported that large flexoelectric...Flexoelectricity,an electromechanical coupling between strain gradient and electrical polarization in dielectrics or semiconductors,has attracted significant scientific interest.It is reported that large flexoelectric behaviors can be obtained at the nanoscale because of the size effect.However,the flexoelectric responses of centrosymmetric semiconductors(CSs)are extremely weak under a conventional beam-bending approach,owing to weak flexoelectric coefficients and small strain gradients.The flexoelectric-like effect is an enhanced electromechanical effect coupling the flexoelectricity and piezoelectricity.In this paper,a composite structure consisting of piezoelectric dielectric layers and a CS layer is proposed.The electromechanical response of the CS is significantly enhanced via antisymmetric piezoelectric polarization.Consequently,the cross-scale mechanically tuned carrier distribution in the semiconductor is realized.Meanwhile,the significant size dependence of the electromechanical fields in the semiconductor is demonstrated.The flexoelectronics suppression is found when the semiconductor thickness reaches a critical size(0.8μm).In addition,the first-order carrier density of the composite structure under local loads is illustrated.Our results can suggest the structural design for flexoelectric semiconductor devices.展开更多
TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have desig...TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have designed two-dimensional semiconductor TiOS materials using swarm intelligence algorithms combined with first-principles calculations.Three stable low-energy structures with space groups of P2_(1)/m,P3m1 and P2_(1)/c are identified.Among these structures,the Janus P3m1 phase is a direct bandgap semiconductor,while the P2_(1)/m and P2_(1)/c phases are indirect bandgap semiconductors.Utilizing the accurate hybrid density functional HSE06 method,the band gaps of the three structures are calculated to be 2.34 eV(P2_(1)/m),2.24 eV(P3m1)and 3.22 eV(P2_(1)/c).Optical calculations reveal that TiOS materials exhibit a good light-harvesting capability in both visible and ultraviolet spectral ranges.Moreover,the photocatalytic calculations also indicate that both P2_(1)/m and P3m1 TiOS can provide a strong driving force for converting H_(2)O to H_(2)and O_(2)in an acidic environment with pH=0.The structural stabilities,mechanical properties,electronic structures and hydrogen evolution reaction activities are also discussed in detail.Our research suggests that two-dimensional TiOS materials have potential applications in both semiconductor devices and photocatalysis.展开更多
Organic magnetic semiconductors have aroused much attention for spintronic applications. However, it remains challenging to achieve organic semiconductors with strong room-temperature ferromagnetism. Here, we report a...Organic magnetic semiconductors have aroused much attention for spintronic applications. However, it remains challenging to achieve organic semiconductors with strong room-temperature ferromagnetism. Here, we report a two-dimensional (2D) tetragonal organic-inorganic ferrimagnetic (FIM) semiconductor of Fe_(14)Se_(16)(peha)_(0.7) (peha = pentaethylenehexamine) with excellent thermal stability and a Curie temperature (T_(C)) higher than 519 K. Magnetic and Mössbauer measurements reveal a long-range magnetic ordering in single crystalline Fe_(14)Se_(16)(peha)0.7 nanosheets. The saturation magnetization and coercivity are 5.9 emu g^(−1) and 0.42 kOe at 5 K, which slightly reduces to 4.6 emu g^(−1) and ∼0 Oe at 300 K. A direct optical bandgap of 2.22 eV is obtained by tuning electronic structure of β-Fe3Se4 host layers through spacer layers consisting of Fe^(3+) and peha. Electrical and Seebeck coefficient data indicate that the n-type semiconductor follows the thermally-activated conduction mechanism (lnρ ∝ T^(−1)) in a range of 130–300 K with an activation energy (Ea) of 62.69 meV. Thermal conductivity is 2.5 W m^(−1) K^(−1) at 300 K, while the Wiedemann–Franz law is strongly violated according to electrical-thermal transport data due to weak incorporation of organic spacer layers and host layers. This study sets the stage for exploiting new room-temperature organic magnetic semiconductor systems for spintronic materials.展开更多
In this study,the free vibration of a piezoelectric semiconductor(PS)composite structure composed of a PS layer,a fractional viscoelastic layer,and an elastic substrate with simply-supported boundary conditions is inv...In this study,the free vibration of a piezoelectric semiconductor(PS)composite structure composed of a PS layer,a fractional viscoelastic layer,and an elastic substrate with simply-supported boundary conditions is investigated.The fractional derivative Zener model is used to establish the constitutive relation of the viscoelastic layer.The first-order shear deformation theory and Hamilton's principle are used to derive the motion equations of the present problem.The frequency parameter is numerically resolved with the Newton-Raphson method through the eigenvalue equation.The effects of either geometric parameters,carrier density,and electric voltage applied on the surface of the composite structure or the fractional order of the Zener model on both the natural frequency and loss factor are discussed,and some interesting conclusions are drawn.This work will be helpful for designing and manufacturing PS materials and structures.展开更多
Regioselevtive functionalization of perylene diimides(PDIs)at bay area often requires multistep synthesis and strenuous recrystallization.Direct bromination of perylene diimides only afford the 1,6 and 1,7-regioisomer...Regioselevtive functionalization of perylene diimides(PDIs)at bay area often requires multistep synthesis and strenuous recrystallization.Direct bromination of perylene diimides only afford the 1,6 and 1,7-regioisomers.More importantly,the 1,6-dibromo regioisomers could only be separated by preparative HPLC.Herein,we report a promising strategy for constructing Janus backbone of BN-doped perylene diimide derivatives.This Janus-type configuration results in the unique regioselective functionalization of BN-JPDIs,which yields exclusively the 1,6-regioisomers.Further investigation shows that the Janus-type configuration leads to a net dipole moment of 1.94 D and intramolecular charge transfer,which causes substantial changes on the optoelectronic properties.Moreover,the single crystal organic field-effect transistors based on BN-JPDIs exhibit electron mobilities up to 0.57 cm^(2)V^(-1)s^(-1),showcasing their potential as versatile building block towards high-performance n-type organic semiconductors.展开更多
Enhancing the output capacity of semiconductor bridge(SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficie...Enhancing the output capacity of semiconductor bridge(SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficiency of energetic semiconductor bridge(ESCB) is the primary focus for large-scale engineering applications in the future. Here, the Al/CuO nano-film ESCB was efficiently fabricated using 3D direct writing. The electrostatic safety of the film is enhanced by precisely adjusting the particle size of Al, while ensuring that the SCB can initiate the film with small energy. The burst characteristics of SCB/ESCB were thoroughly investigated by employing a 100 μF tantalum capacitor to induce SCB and ESCB under an intense voltage gradient. The solid-state heating process of both SCB and ESCB was analyzed with multi physical simulation(MPS). The experimental results demonstrate that the critical burst time of both SCB and ESCB decreases with increasing voltage. Under the same voltage, the critical burst time of ESCB is longer than that of SCB, primarily due to differences in the melting to vaporization stage. The MPS results indicate that the highest temperature is observed at the V-shaped corner of SCB. Due to the thermal contact resistance between SCB and the film, heat conduction becomes more concentrated in the central region of the bridge, resulting in a faster solid-state heating process for ESCB compared to SCB.The results of the gap ignition experiments indicate that at a 19 mm gap, an ESCB with a film mass of 10 mg can ignite nickel hydrazine nitrate(NHN) and cyclotrimethylenetrinitramine(RDX). This suggests that thermite ESCB can serve as a novel, safe, and reliable energy exchange element and initiator in largescale engineering applications.展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
The lattice dynamics of a high Al composition semiconductor alloy,Al_(0.86)Ga_(0.14)N,in comparison with intrinsic GaN and AlN are studied by Stokes/anti-Stokes Raman spectroscopy in the temperature range of 85–823 K...The lattice dynamics of a high Al composition semiconductor alloy,Al_(0.86)Ga_(0.14)N,in comparison with intrinsic GaN and AlN are studied by Stokes/anti-Stokes Raman spectroscopy in the temperature range of 85–823 K.The phonon anharmonic effect in Al_(0.86)Ga_(0.14)N is found to be stronger than that in GaN,revealing low thermal conductivity in the semiconductor alloy.Multi-phonon coupling behavior is analyzed by both Stokes Raman and anti-Stokes Raman spectroscopy.It is interesting to find that the anti-Stokes scattering exhibits stronger three-phonon coupling than the Stokes scattering,which may be due to the fact that the anti-stokes scattering process is generated from an excited state and the scattered photons have higher energies.The Stokes/anti-Stokes temperature correction factor β for Raman modes in Al_(0.86)Ga_(0.14)N alloy are all smaller than those of the corresponding intrinsic modes in GaN and AlN.The reasons for the difference in b can be attributed to three aspects,including the equipment setups,materials properties(the binding energy)and the coupling strength of Raman scattering and the sample.展开更多
Background:The medicinal material known as Os Draconis(Longgu)originates from fossilized remains of ancient mammals and is widely used in treating emotional and mental conditions.However,fossil resources are nonrenewa...Background:The medicinal material known as Os Draconis(Longgu)originates from fossilized remains of ancient mammals and is widely used in treating emotional and mental conditions.However,fossil resources are nonrenewable,and clinical demand is increasingly difficult to meet,leading to a proliferation of counterfeit products.During prolonged geological burial,static pressure from the surrounding strata severely compromises the microstructural integrity of osteons in Os Draconis,but Os Draconis still largely retains the structural features of mammalian bone.Methods:Using verified authentic Os Draconis samples over 10,000 years old as a baseline,this study summarizes the ultrastructural characteristics of genuine Os Draconis.Employing electron probe microanalysis and optical polarized light microscopy,we examined 28 batches of authentic Os Draconis and 31 batches of counterfeits to identify their ultrastructural differences.Key points for ultrastructural identification of Os Draconis were compiled,and a new identification approach was proposed based on these differences.Results:Authentic Os Draconis exhibited distinct ultrastructural markers:irregularly shaped osteons with traversing fissures,deformed/displaced Haversian canals,and secondary mineral infill(predominantly calcium carbonate).Counterfeits showed regular osteon arrangements,absent traversal fissures,and homogeneous hydroxyapatite composition.Lab-simulated samples lacked structural degradation features.EPMA confirmed calcium carbonate infill in fossilized Haversian canals,while elemental profiles differentiated lacunae types(void vs.mineral-packed).Conclusion:The study established ultrastructural criteria for authentic Os Draconis identification:osteon deformation,geological fissures penetrating bone units,and heterogenous mineral deposition.These features,unattainable in counterfeits or modern processed bones,provide a cost-effective,accurate identification method.This approach bridges gaps in TCM material standardization and supports quality control for clinical applications.展开更多
Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金Supported by Bissell Distinguished Professor Endowment Fund at UNC-Charlotte。
文摘Although there are numerous optical spectroscopy techniques and methods that have been used to extract the fundamental bandgap of a semiconductor,most of them belong to one of these three approaches:(1)the excitonic absorption,(2)modulation spectroscopy,and(3)the most widely used Tauc-plot.The excitonic absorption is based on a many-particle theory,which is physically the most correct approach,but requires more stringent crystalline quality and appropriate sample preparation and experimental implementation.The Tauc-plot is based on a single-particle theo⁃ry that neglects the many-electron effects.Modulation spectroscopy analyzes the spectroscopy features in the derivative spectrum,typically,of the reflectance and transmission under an external perturbation.Empirically,the bandgap ener⁃gy derived from the three approaches follow the order of E_(ex)>E_(MS)>E_(TP),where three transition energies are from exci⁃tonic absorption,modulation spectroscopy,and Tauc-plot,respectively.In principle,defining E_(g) as the single-elec⁃tron bandgap,we expect E_(g)>E_(ex),thus,E_(g)>E_(TP).In the literature,E_(TP) is often interpreted as E_(g),which is conceptual⁃ly problematic.However,in many cases,because the excitonic peaks are not readily identifiable,the inconsistency be⁃tween E_(g) and E_(TP) becomes invisible.In this brief review,real world examples are used(1)to illustrate how excitonic absorption features depend sensitively on the sample and measurement conditions;(2)to demonstrate the differences between E_(ex),E_(MS),and E_(TP) when they can be extracted simultaneously for one sample;and(3)to show how the popular⁃ly adopted Tauc-plot could lead to misleading results.Finally,it is pointed out that if the excitonic absorption is not ob⁃servable,the modulation spectroscopy can often yield a more useful and reasonable bandgap than Tauc-plot.
文摘Radiation doses to patients in diagnostics and interventional radiology need to be optimized to comply with the principles of radiation protection in medical practice. This involves using specific detectors with respective diagnostic beams to carry out quality control/quality assurance tests needed to optimize patient doses in the hospital. Semiconductor detectors are used in dosimetry to verify the equipment performance and dose to patients. This work aims to assess the performance, energy dependence, and response of five commercially available semiconductor detectors in RQR, RQR-M, RQA, and RQT at Secondary Standard Dosimetry for clinical applications. The diagnostic beams were generated using Exradin A4 reference ion chamber and PTW electrometer. The ambient temperature and pressure were noted for KTP correction. The detectors designed for RQR showed good performance in RQT beams and vice versa. The detectors designed for RQR-M displayed high energy dependency in other diagnostic beams. The type of diagnostic beam quality determines the response of semiconductor detectors. Therefore, a detector should be calibrated according to the beam qualities to be measured.
基金National Natural Science Foundation of China(12002196,12102140)。
文摘Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.
基金financially supported by the Program of the National Natural Science Foundation of China(Grant No.52371055)the Young Elite Scientist Sponsorship Program Cast(Grant No.YESS20200139)the Basic Scientific Research Project of Liaoning Provincial Department of Education(Grant No.JYTMS20230618)。
文摘The effect of intermetallic particles on the corrosion of 6061 aluminum alloy and its coating used in semiconductor processing systems was systematically studied via liquid and gas experiments and micromorphology characterization.The results revealed that a huge difference of corrosion resistance between imported and domestic 6061 aluminum alloys in HCl solution and gas acid mist experiments mainly was attributed to the different size and amount of Al_(15)(Fe,Mn)_(3)Si_(2).The corrosion resistance of domestic 6061 alloy in dry/wet semiconductor electronic special gas environments was worse than that of imported aluminum alloy,and there are great differences in the corrosion mechanism of 6061 alloy caused by the second phase in the two dry/wet environments.And the corrosion resistance of the hard anodized alumina film was closely related to the microscopic morphology of holes.The vertical and elongatedα-Al_(15)(Mn,Fe)_(3)Si_(2) phase was formed in the rolled aluminum alloy that has been rolled perpendicular to the surface of the substrate.Compared to the horizontal long hole,the longitudinal long holes generated by the verticalα-Al_(15)(Mn,Fe)_(3)Si_(2) phase will enable the corrosive medium to reach the substrate rapidly,which significantly weakens the corrosion resistance of the hard anodized film.
基金supported by the National Key Research and Development Program of China(Grant No.2021YFB2011400)the National Natural Science Foundation of China(Grant No.52375081).
文摘Flexoelectricity,an electromechanical coupling between strain gradient and electrical polarization in dielectrics or semiconductors,has attracted significant scientific interest.It is reported that large flexoelectric behaviors can be obtained at the nanoscale because of the size effect.However,the flexoelectric responses of centrosymmetric semiconductors(CSs)are extremely weak under a conventional beam-bending approach,owing to weak flexoelectric coefficients and small strain gradients.The flexoelectric-like effect is an enhanced electromechanical effect coupling the flexoelectricity and piezoelectricity.In this paper,a composite structure consisting of piezoelectric dielectric layers and a CS layer is proposed.The electromechanical response of the CS is significantly enhanced via antisymmetric piezoelectric polarization.Consequently,the cross-scale mechanically tuned carrier distribution in the semiconductor is realized.Meanwhile,the significant size dependence of the electromechanical fields in the semiconductor is demonstrated.The flexoelectronics suppression is found when the semiconductor thickness reaches a critical size(0.8μm).In addition,the first-order carrier density of the composite structure under local loads is illustrated.Our results can suggest the structural design for flexoelectric semiconductor devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.52272219 and U1904612)the Natural Science Foundation of Henan Province(Grant No.242300421191).
文摘TiO_(2)is a well-known photocatalyst with a band gap of 3.2 eV,yet its ability to absorb light is limited to the short wavelengths of ultraviolet light.To achieve a more effective photocatalytic material,we have designed two-dimensional semiconductor TiOS materials using swarm intelligence algorithms combined with first-principles calculations.Three stable low-energy structures with space groups of P2_(1)/m,P3m1 and P2_(1)/c are identified.Among these structures,the Janus P3m1 phase is a direct bandgap semiconductor,while the P2_(1)/m and P2_(1)/c phases are indirect bandgap semiconductors.Utilizing the accurate hybrid density functional HSE06 method,the band gaps of the three structures are calculated to be 2.34 eV(P2_(1)/m),2.24 eV(P3m1)and 3.22 eV(P2_(1)/c).Optical calculations reveal that TiOS materials exhibit a good light-harvesting capability in both visible and ultraviolet spectral ranges.Moreover,the photocatalytic calculations also indicate that both P2_(1)/m and P3m1 TiOS can provide a strong driving force for converting H_(2)O to H_(2)and O_(2)in an acidic environment with pH=0.The structural stabilities,mechanical properties,electronic structures and hydrogen evolution reaction activities are also discussed in detail.Our research suggests that two-dimensional TiOS materials have potential applications in both semiconductor devices and photocatalysis.
基金supported by the National Natural Science Foundation of China(Nos.52371203,51971221 and 52031014).
文摘Organic magnetic semiconductors have aroused much attention for spintronic applications. However, it remains challenging to achieve organic semiconductors with strong room-temperature ferromagnetism. Here, we report a two-dimensional (2D) tetragonal organic-inorganic ferrimagnetic (FIM) semiconductor of Fe_(14)Se_(16)(peha)_(0.7) (peha = pentaethylenehexamine) with excellent thermal stability and a Curie temperature (T_(C)) higher than 519 K. Magnetic and Mössbauer measurements reveal a long-range magnetic ordering in single crystalline Fe_(14)Se_(16)(peha)0.7 nanosheets. The saturation magnetization and coercivity are 5.9 emu g^(−1) and 0.42 kOe at 5 K, which slightly reduces to 4.6 emu g^(−1) and ∼0 Oe at 300 K. A direct optical bandgap of 2.22 eV is obtained by tuning electronic structure of β-Fe3Se4 host layers through spacer layers consisting of Fe^(3+) and peha. Electrical and Seebeck coefficient data indicate that the n-type semiconductor follows the thermally-activated conduction mechanism (lnρ ∝ T^(−1)) in a range of 130–300 K with an activation energy (Ea) of 62.69 meV. Thermal conductivity is 2.5 W m^(−1) K^(−1) at 300 K, while the Wiedemann–Franz law is strongly violated according to electrical-thermal transport data due to weak incorporation of organic spacer layers and host layers. This study sets the stage for exploiting new room-temperature organic magnetic semiconductor systems for spintronic materials.
基金supported by the National Natural Science Foundation of China(No.12372153)the Funding by Guangdong Basic and Applied Basic Research Foundation(No.2023A1515012366)。
文摘In this study,the free vibration of a piezoelectric semiconductor(PS)composite structure composed of a PS layer,a fractional viscoelastic layer,and an elastic substrate with simply-supported boundary conditions is investigated.The fractional derivative Zener model is used to establish the constitutive relation of the viscoelastic layer.The first-order shear deformation theory and Hamilton's principle are used to derive the motion equations of the present problem.The frequency parameter is numerically resolved with the Newton-Raphson method through the eigenvalue equation.The effects of either geometric parameters,carrier density,and electric voltage applied on the surface of the composite structure or the fractional order of the Zener model on both the natural frequency and loss factor are discussed,and some interesting conclusions are drawn.This work will be helpful for designing and manufacturing PS materials and structures.
基金support from the National Natural Science Foundation of China(Nos.22071007,22020102001,22335002)the National Key R&D Program of China(No.2022YFB3602802)+3 种基金Beijing Natural Science Foundation(No.Z220025)the National Facility for Protein Science in Shanghai,Shanghai Advanced Research Institute,CAS,for providing technical support in X-ray diffraction data collectionthe High-Performance Computing Platform of Peking University for supporting the computational workthe support of BMS Junior Fellow program。
文摘Regioselevtive functionalization of perylene diimides(PDIs)at bay area often requires multistep synthesis and strenuous recrystallization.Direct bromination of perylene diimides only afford the 1,6 and 1,7-regioisomers.More importantly,the 1,6-dibromo regioisomers could only be separated by preparative HPLC.Herein,we report a promising strategy for constructing Janus backbone of BN-doped perylene diimide derivatives.This Janus-type configuration results in the unique regioselective functionalization of BN-JPDIs,which yields exclusively the 1,6-regioisomers.Further investigation shows that the Janus-type configuration leads to a net dipole moment of 1.94 D and intramolecular charge transfer,which causes substantial changes on the optoelectronic properties.Moreover,the single crystal organic field-effect transistors based on BN-JPDIs exhibit electron mobilities up to 0.57 cm^(2)V^(-1)s^(-1),showcasing their potential as versatile building block towards high-performance n-type organic semiconductors.
基金supported by the National Natural Science Foundation of China(Grant Nos.22275092 and 52372084)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.KYCX24_0709)+1 种基金the Fundamental Research Funds for the Central Universities(Grant No.30923010920)the State Key Laboratory of Transient Chemical Effects and Control,China,(Grant No.6142602230201).
文摘Enhancing the output capacity of semiconductor bridge(SCB) through the application of composite nano-energetic films is a subject of wide concern. Furthermore, improving the safety, reliability, and production efficiency of energetic semiconductor bridge(ESCB) is the primary focus for large-scale engineering applications in the future. Here, the Al/CuO nano-film ESCB was efficiently fabricated using 3D direct writing. The electrostatic safety of the film is enhanced by precisely adjusting the particle size of Al, while ensuring that the SCB can initiate the film with small energy. The burst characteristics of SCB/ESCB were thoroughly investigated by employing a 100 μF tantalum capacitor to induce SCB and ESCB under an intense voltage gradient. The solid-state heating process of both SCB and ESCB was analyzed with multi physical simulation(MPS). The experimental results demonstrate that the critical burst time of both SCB and ESCB decreases with increasing voltage. Under the same voltage, the critical burst time of ESCB is longer than that of SCB, primarily due to differences in the melting to vaporization stage. The MPS results indicate that the highest temperature is observed at the V-shaped corner of SCB. Due to the thermal contact resistance between SCB and the film, heat conduction becomes more concentrated in the central region of the bridge, resulting in a faster solid-state heating process for ESCB compared to SCB.The results of the gap ignition experiments indicate that at a 19 mm gap, an ESCB with a film mass of 10 mg can ignite nickel hydrazine nitrate(NHN) and cyclotrimethylenetrinitramine(RDX). This suggests that thermite ESCB can serve as a novel, safe, and reliable energy exchange element and initiator in largescale engineering applications.
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
基金supported by the National Natural Science Foundation of China(Grant No.12374013)the Fundamental Research Funds for the Central Universities(Grant No.2020SCUNL107).
文摘The lattice dynamics of a high Al composition semiconductor alloy,Al_(0.86)Ga_(0.14)N,in comparison with intrinsic GaN and AlN are studied by Stokes/anti-Stokes Raman spectroscopy in the temperature range of 85–823 K.The phonon anharmonic effect in Al_(0.86)Ga_(0.14)N is found to be stronger than that in GaN,revealing low thermal conductivity in the semiconductor alloy.Multi-phonon coupling behavior is analyzed by both Stokes Raman and anti-Stokes Raman spectroscopy.It is interesting to find that the anti-Stokes scattering exhibits stronger three-phonon coupling than the Stokes scattering,which may be due to the fact that the anti-stokes scattering process is generated from an excited state and the scattered photons have higher energies.The Stokes/anti-Stokes temperature correction factor β for Raman modes in Al_(0.86)Ga_(0.14)N alloy are all smaller than those of the corresponding intrinsic modes in GaN and AlN.The reasons for the difference in b can be attributed to three aspects,including the equipment setups,materials properties(the binding energy)and the coupling strength of Raman scattering and the sample.
基金supported by the Scientific and Technological Innovation Project of the China Academy of Chinese Medical Sciences(CI2021A04013)the National Natural Science Foundation of China(82204610)+1 种基金the Qihang Talent Program(L2022046)the Fundamental Research Funds for the Central Public Welfare Research Institutes(ZZ15-YQ-041 and L2021029).
文摘Background:The medicinal material known as Os Draconis(Longgu)originates from fossilized remains of ancient mammals and is widely used in treating emotional and mental conditions.However,fossil resources are nonrenewable,and clinical demand is increasingly difficult to meet,leading to a proliferation of counterfeit products.During prolonged geological burial,static pressure from the surrounding strata severely compromises the microstructural integrity of osteons in Os Draconis,but Os Draconis still largely retains the structural features of mammalian bone.Methods:Using verified authentic Os Draconis samples over 10,000 years old as a baseline,this study summarizes the ultrastructural characteristics of genuine Os Draconis.Employing electron probe microanalysis and optical polarized light microscopy,we examined 28 batches of authentic Os Draconis and 31 batches of counterfeits to identify their ultrastructural differences.Key points for ultrastructural identification of Os Draconis were compiled,and a new identification approach was proposed based on these differences.Results:Authentic Os Draconis exhibited distinct ultrastructural markers:irregularly shaped osteons with traversing fissures,deformed/displaced Haversian canals,and secondary mineral infill(predominantly calcium carbonate).Counterfeits showed regular osteon arrangements,absent traversal fissures,and homogeneous hydroxyapatite composition.Lab-simulated samples lacked structural degradation features.EPMA confirmed calcium carbonate infill in fossilized Haversian canals,while elemental profiles differentiated lacunae types(void vs.mineral-packed).Conclusion:The study established ultrastructural criteria for authentic Os Draconis identification:osteon deformation,geological fissures penetrating bone units,and heterogenous mineral deposition.These features,unattainable in counterfeits or modern processed bones,provide a cost-effective,accurate identification method.This approach bridges gaps in TCM material standardization and supports quality control for clinical applications.
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
