系统级电路辐照效应的复杂性对建模方法提出了高精度与高速度的双重要求。CMOS(互补金属氧化物半导体)工艺收发器作为系统级电路的核心常用器件,其总剂量效应的精准建模仿真至关重要。为此,本文提出一种适用于CMOS收发器的总剂量效应行...系统级电路辐照效应的复杂性对建模方法提出了高精度与高速度的双重要求。CMOS(互补金属氧化物半导体)工艺收发器作为系统级电路的核心常用器件,其总剂量效应的精准建模仿真至关重要。为此,本文提出一种适用于CMOS收发器的总剂量效应行为级仿真方法:采用输入输出缓冲区信息规范(input/output buffer information specification,IBIS)模型表征Hi-1573器件的缓冲区特性,通过VHDL-AMS语言完成器件功能区的精细化建模。为验证方法有效性,开展了^(60)Co伽马射线辐照实验,基于实验数据优化总剂量效应模块参数,将其与IBIS总剂量效应模型融合进行仿真。结果显示,仿真结果与实验数据的性能退化趋势高度吻合,充分证明了该行为级仿真方法在CMOS收发器总剂量效应建模中的可行性与可靠性。展开更多
针对智能导钻传感系统在极端温度条件下的应用需求,基于国内0.15μm SOI CMOS工艺,采用正负温度系数电阻平衡、MOS晶体管背栅反馈以及偏置电流温度补偿等技术,设计一款可工作于-50~250℃的宽温区低温漂基准电压源。仿真结果表明,该基准...针对智能导钻传感系统在极端温度条件下的应用需求,基于国内0.15μm SOI CMOS工艺,采用正负温度系数电阻平衡、MOS晶体管背栅反馈以及偏置电流温度补偿等技术,设计一款可工作于-50~250℃的宽温区低温漂基准电压源。仿真结果表明,该基准电压源在-50~250℃温度范围内能够稳定输出2.537 V的基准电压,温度系数为14.45 ppm/℃时,低频下电源抑制比达到-63.1 dB,在不同电源电压和工艺角下仿真均表现出良好的稳定性。该电路适用于需要在宽温度区域内保持高精度和稳定性的电子系统。展开更多
基于高速低功耗混合应用场景下对互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)比较器性能的综合需求,系统研究其结构优化设计。阐述动态比较器在响应速度、功耗控制、输入失调与噪声抑制等方面的关键技术,介绍...基于高速低功耗混合应用场景下对互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)比较器性能的综合需求,系统研究其结构优化设计。阐述动态比较器在响应速度、功耗控制、输入失调与噪声抑制等方面的关键技术,介绍前置放大器、电源控制、闭环反馈及偏置电路的协同优化策略。结合65 nm CMOS工艺下的仿真测试结果,分析主要性能指标在典型工况下的表现,验证所提结构的可实现性与工程适应性。结果表明,该设计能够在低功耗约束下保持高速响应。展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep...Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.展开更多
Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical cra...Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.展开更多
In this study,the mechanism and characteristics of the responseαparticles and the damage caused by them in CMOS active pixel(APS)sensors were investigated.A detection and compensation algorithm for dead pixels caused...In this study,the mechanism and characteristics of the responseαparticles and the damage caused by them in CMOS active pixel(APS)sensors were investigated.A detection and compensation algorithm for dead pixels caused byαparticle ionizing radiation was proposed,and the effects of dead-pixel compensation algorithms were compared and analyzed under different parameter conditions.The experimental results show thatαparticle response signal has highest accuracy at 9 dB gain,with an obvious“target-ring”distribution.With increasing cumulative dose,the CMOS APS pedestal tends to saturation while dead pixels continue increasing.Though some pixel damage recovers through natural annealing,the dead-to-noise ratio increases with irradiation time,reaching 32.54%after 72 h.A hierarchical clustering dead-pixel detection method is proposed,categorizing pixels into two types:those within and outside the response event.A classification compensation strategy combining mean and majority filtering is proposed.This compensation algorithm can address dead-pixel interference without affectingαparticle radiation response data.When iterated multiple times and with integration time exceeding 6.31 ms,the number of dead pixels can be effectively reduced.展开更多
文摘系统级电路辐照效应的复杂性对建模方法提出了高精度与高速度的双重要求。CMOS(互补金属氧化物半导体)工艺收发器作为系统级电路的核心常用器件,其总剂量效应的精准建模仿真至关重要。为此,本文提出一种适用于CMOS收发器的总剂量效应行为级仿真方法:采用输入输出缓冲区信息规范(input/output buffer information specification,IBIS)模型表征Hi-1573器件的缓冲区特性,通过VHDL-AMS语言完成器件功能区的精细化建模。为验证方法有效性,开展了^(60)Co伽马射线辐照实验,基于实验数据优化总剂量效应模块参数,将其与IBIS总剂量效应模型融合进行仿真。结果显示,仿真结果与实验数据的性能退化趋势高度吻合,充分证明了该行为级仿真方法在CMOS收发器总剂量效应建模中的可行性与可靠性。
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12472155)the Natural Science Foundation of Hebei Province of China(No.A2024210002)。
文摘Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.
基金Project supported by the Guangdong Basic and Applied Basic Research Foundation of China(Nos.2022B1515020099 and 2024A1515240026)the National Natural Science Foundation of China(No.12372147)the Fundamental Research Funds for the Central Universities of China(No.HIT.OCEF.2024019)。
文摘Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.
基金supported by the National Natural Science Foundation of China(No.11905102)Hunan Provincial Postgraduate Research and Innovation Project(No.QL20230234)。
文摘In this study,the mechanism and characteristics of the responseαparticles and the damage caused by them in CMOS active pixel(APS)sensors were investigated.A detection and compensation algorithm for dead pixels caused byαparticle ionizing radiation was proposed,and the effects of dead-pixel compensation algorithms were compared and analyzed under different parameter conditions.The experimental results show thatαparticle response signal has highest accuracy at 9 dB gain,with an obvious“target-ring”distribution.With increasing cumulative dose,the CMOS APS pedestal tends to saturation while dead pixels continue increasing.Though some pixel damage recovers through natural annealing,the dead-to-noise ratio increases with irradiation time,reaching 32.54%after 72 h.A hierarchical clustering dead-pixel detection method is proposed,categorizing pixels into two types:those within and outside the response event.A classification compensation strategy combining mean and majority filtering is proposed.This compensation algorithm can address dead-pixel interference without affectingαparticle radiation response data.When iterated multiple times and with integration time exceeding 6.31 ms,the number of dead pixels can be effectively reduced.
