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Charge carrier management via semiconducting matrix for efficient self-powered quantum dot infrared photodetectors 被引量:1
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作者 Jianfeng Ding Xinying Liu +3 位作者 Yueyue Gao Chen Dong Gentian Yue Furui Tan 《Journal of Semiconductors》 2025年第3期74-81,共8页
Quantum dot(QD)-based infrared photodetector is a promising technology that can implement current monitoring,imaging and optical communication in the infrared region. However, the photodetection performance of self-po... Quantum dot(QD)-based infrared photodetector is a promising technology that can implement current monitoring,imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction.The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10^(12)Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector(4.66 × 10^(11)Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices. 展开更多
关键词 quantum dot semiconducting matrix ligand exchange self-powered photodetectors
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Effectiveness analysis of corona protection materials for HV rotating machines
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作者 Victor Belko FENG Shengxi +2 位作者 Efrem Feklistov FENG Yu LIU Ji 《电机与控制学报》 北大核心 2025年第4期35-44,共10页
In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’d... In this paper a fully parametrized finite element simulation model of the stator bar end is created using the COMSOL Multiphysics.The model allows conducting the comparison of different corona protection structures’design,various materials properties,and finally optimizing the corona protection system.Several samples of SiC based nonlinear conductivity materials for corona protection were fabricated in laboratory and then investigated.The conductivity dependencies on electric field(0.05 to 1 kV/mm)and temperature(20 to 155℃)were measured.By comparing the heat-resistant grades of the corona protection material and the insulating material,the maximum working temperature of the corona protection material corresponds to the heat-resistant grade F of the insulating material.As the temperature increases,the nonlinear characteristics of the corona protection material in the experiment decrease dramatically,reducing the heat-resistant grade of the corona protection material.The decrease in the nonlinear characteristics of the corona protection material at the maximum operating temperature causes the maximum electric field strength at the end of the HV rotating machines end corona protection(ECP)exceeding the corona discharge electric field strength,resulting in corona phenomenon. 展开更多
关键词 stator windings partial discharges stress grading corona protection semiconductive materials surface resistance nonlinear properties
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Synergetic Enhancement of Hardness and Toughness in New Superconductors Ti_(2)Co and Ti_(4)Co_(2)O
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作者 Lifen Shi Keyuan Ma +12 位作者 Jingyu Hou Pan Ying Ningning Wang Xiaojun Xiang Pengtao Yang Xiaohui Yu Huiyang Gou Jianping Sun Yoshiya Uwatoko Fabian O.von Rohr Xiangfeng Zhou Bosen Wang Jinguang Cheng 《Chinese Physics Letters》 2025年第6期170-177,共8页
Compared to traditional superhard materials with high electron density and short,strong covalent bonds,alloy materials mainly composed of metallic bonding structures typically have great toughness and lower hardness.B... Compared to traditional superhard materials with high electron density and short,strong covalent bonds,alloy materials mainly composed of metallic bonding structures typically have great toughness and lower hardness.Breaking through the limits of alloy materials is a preface and long-term topic,which is of great significance and value for improving the comprehensive mechanical properties of alloy materials.Here,we report on the discovery of a cubic alloy semiconducting material Ti_(2)Co with a large Vickers of hardness K_(v)^(exp)∼6.7GPa and low fracture toughness of K_(IC)^(exp)∼1.51MPa·m^(1/2).Unexpectedly,the K_(v)^(exp)∼6.7GPa is nearly triple of the K_(v)^(cal)∼2.66GPa predicted by density functional theory(DFT)calculations and theK_(IC)^(exp)∼1.51MPa·m^(1/2)is about one or two orders of magnitude smaller than that of ordinary titanium alloy materials(K_(IC)^(exp)∼30-120MPa·m^(1/2)).These specifications place Ti_(2)Co far from the phase space of the known alloy materials.Upon incorporation of oxygen into structural void positions,both values were simultaneously improved for Ti_(4)Co_(2)O to∼9.7GPa and∼2.19MPa·m^(1/2),respectively.Further DFT calculations on the electron localization function of Ti_(4)Co_(2)X(X=B,C,N,O)vs.the interstitial elements indicate that these simultaneous improvements originate from the coexistence of Ti-Co metallic bonds,the emergence of newly oriented Ti-X covalent bonds,and the increase of electron concentration.Moreover,the large difference between K_(v)^(exp)and K_(v)^(cal)of Ti_(2)Co suggests underlying mechanism concerning the absence of the O(16d)or Ti_(2)-O bonds in the O-(Ti_(2))_(6) octahedron.This discovery proposes a new pathway to simultaneously improve the comprehensive mechanical performances and illuminates the path of exploring superconducting materials with excellent mechanical performances. 展开更多
关键词 limits metallic bonding structures superhard materials HARDNESS SUPERCONDUCTORS alloy materials improving comprehensive mechanical properties cubic alloy semiconducting material
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Structural design of highly permeable Bi_(2)O_(3) microspheres decorated by Pt-nanoparticles:facile synthesis and acetic acid sensing performance
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作者 Fan Yang Jun-Ning Zhang +4 位作者 Chao Zhang Xin-Da Xu Bing Li Woochul Yang Wan-Feng Xie 《Rare Metals》 2025年第9期6417-6425,共9页
Real-time detection of acetic acid vapor is of concern for ensuring environmental and personal safety.However,acetic acid gas sensors,particularly those based on Bi_(2)O_(3),often fail to meet practical performance re... Real-time detection of acetic acid vapor is of concern for ensuring environmental and personal safety.However,acetic acid gas sensors,particularly those based on Bi_(2)O_(3),often fail to meet practical performance requirements owing to their slow response characteristics and high operating temperature.To enhance sensing performance,highly permeable Bi_(2)O_(3)microspheres decorated by Pt-nanoparticles are rationally synthesized by a facile template method.Among the fabricated sensors,the one based on 3 wt%Pt-decorated Bi_(2)O_(3)demonstrated excellent sensing performance.Specifically,the sensor displayed high selectivity for acetic acid,rapid response and recovery times(22.5 and 9 s,respectively),strong resistance to interference,and good long-term stability at a low operating temperature(150℃).Notably,the sensor exhibited an exceptionally high response of 126 to 100 ppm acetic acid—the highest reported value for Bi_(2)O_(3)-based sensors tested at a relatively low operating temperature in recent years.These results demonstrate that Pt-decorated Bi_(2)O_(3)holds strong potential for use in high-performance acetic acid sensors. 展开更多
关键词 Semiconducting metal oxide Bi_(2)O_(3)microspheres Acetic acid Gas sensor
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Liquid nitrogen post-treatment for improved aggregation and electrical properties in organic semiconductors
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作者 Yuqing Ding Zhiying Yi +2 位作者 Zhihui Wang Hongyu Chen Yan Zhao 《Chinese Chemical Letters》 SCIE CAS CSCD 2024年第12期278-284,共7页
Organic semiconductors are promising candidates as active layers in flexible and biocompatible electronics owing to their solution processability and molecular design flexibility.However,it remains necessary to establ... Organic semiconductors are promising candidates as active layers in flexible and biocompatible electronics owing to their solution processability and molecular design flexibility.However,it remains necessary to establish a green processing approach to acquire desirable electrical properties for scalable industrial applications.Here,a highly efficient and environmentally friendly post-treatment method using liquid nitrogen as a cooling bath is developed to optimize the aggregation structure and electrical performance of organic semiconductors.The carrier mobility has increased by nearly 60%with this treatment,achieving a performance boost comparable to that of traditional annealing methods.This performance improvement is attributable to the denser aggregation structure and enhanced molecular ordering compared with those of as-cast semiconducting polymer films.Impressively,the entire process can be completed within a few minutes without additional vacuum or high-temperature conditions,offering an economical and efficient alternative to traditional methods.Furthermore,the enhancement effect and long-term stability of this treatment are validated across a wide range of organic semiconductors,positioning this green and versatile approach as a promising substitute for conventional post-treatment,thereby facilitating the development of next-generation sustainable electronics. 展开更多
关键词 Organic electronics Environmentally friendly process Ultralow-temperature post-treatment Charge carrier mobility Semiconducting polymer Organic small molecule
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Modulating oxygen vacancy concentration for selective growth of semiconducting single-walled carbon nanotubes with narrow diameters
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作者 Lei Yang Tingkai Zhao +5 位作者 Abdul Jalil Huijun Luo Tao Jiang Yuan Shu Yazhou Yin Weiyu Jia 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2024年第7期44-54,共11页
Semiconducting single-walled carbon nanotubes(s-SWCNTs)with narrow diameters are promising for future applications in many fields,especially in nanoelectronics and optoelectronics.In this study,the oxygen vacancy conc... Semiconducting single-walled carbon nanotubes(s-SWCNTs)with narrow diameters are promising for future applications in many fields,especially in nanoelectronics and optoelectronics.In this study,the oxygen vacancy concentration modulating strategy was utilized for growing narrow diameters s-SWCNTs by the chemical vapor deposition(CVD)method.The Fe_(0.01)Mg_(0.99)O solid solution based catalyst was syn-thesized to anchor the Fe particles and inhibit aggregation for growing SWCNTs with uniform diameters.CeO_(2)was introduced into the catalyst to provide oxygen vacancies through H_(2)prereduction.These oxygen vacancies could form an oxidative environment during the growth of SWCNTs,and the chemically active metallic carbon nanotube caps are selectively etched away under this environment.The Fe/Ce molar ratio and H2 prereduction time were optimized to modulate the oxygen vacancy concentration.Ultimately,us-ing the Fe_(0.01)Mg_(0.99)O/CeO_(2)(3)catalyst with 10 min of H_(2)prereduction time,high purity s-SWCNTs with diameters ranging from 1.41 to 1.71 nm and a content of 95.1%were obtained with high selectivity and carbon yield(1.33 wt%).The mechanism behind this phenomenon was elucidated through experimental characterizations and first-principle simulations,further expanding the understanding of the growth of s-SWCNTs through the modulation of oxygen vacancy concentration. 展开更多
关键词 Semiconducting single-walled carbon nanotubes Oxygen vacancy concentration Fe_(0.01)Mg_(0.99)O/CeO_(2)catalyst
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Recent advances of covalent organic frameworks in electronic and optical applications 被引量:13
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作者 Li Ma Shan Wang +1 位作者 Xiao Feng Bo Wang 《Chinese Chemical Letters》 SCIE CAS CSCD 2016年第8期1383-1394,1470,共12页
Covalent organic frameworks(COFs) as an emerging class of porous materials have achieved remarkable progress in recent years.Their high surface area,low mass densities,highly ordered periodic structures,and ease of ... Covalent organic frameworks(COFs) as an emerging class of porous materials have achieved remarkable progress in recent years.Their high surface area,low mass densities,highly ordered periodic structures,and ease of functionalization make COFs exhibit superior potential in gas storage and separation,optoelectronic device and catalysis.This mini review gives a brief introduction of COFs and highlights their applications in electronic and optical fields. 展开更多
关键词 Covalent organic frameworks semiconduction PHOTOCONDUCTION Energy storage Chemosensor
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Advances of the Vertical Directional Solidification Technique for the Growth of High Quality GaSb Bulk Crystals 被引量:2
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作者 Dattatray Bhairu Gadkari 《Journal of Chemistry and Chemical Engineering》 2012年第1期65-73,共9页
Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification (VDS) technique has been employed f... Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification (VDS) technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall. 展开更多
关键词 SOLIDIFICATION growth from melt ANTIMONIDES semiconduction Ⅲ-Ⅴ crystal structure detached growth.
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SEMICONDUCTING AND METALLIC POLYMERS:THE FOURTH GENERATION OF POLYMERIC MATERIALS 被引量:47
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作者 AlanJ.Heeger 《Chinese Journal of Polymer Science》 SCIE CAS CSCD 2001年第6期545-572,共28页
INTRODUCTIONIn 1976, Alan MacDiarmid, Hideki Shirakawa and I, together with a talented group of graduate students andpost-doctoral researchers discovered conducting polymers and the ability to dope these polymers over... INTRODUCTIONIn 1976, Alan MacDiarmid, Hideki Shirakawa and I, together with a talented group of graduate students andpost-doctoral researchers discovered conducting polymers and the ability to dope these polymers over the fullrange from insulator to metal. This was particularly exciting because it created a new field of research on theboundary between chemistry and condensed matter physics, and because it created a number of opportunities: 展开更多
关键词 POLY SEMICONDUCTING AND METALLIC POLYMERS
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Broadband MMIC Power Amplifier for C-X-Ku-Band Applications
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作者 张书敬 杨瑞霞 +2 位作者 张玉清 高学邦 杨克武 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第6期829-832,共4页
A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT).The amplifier isfully monolithic,with all matching,bi... A three-stage MMIC power amplifier operating from 6to 18GHz is fabricated using 0.25μm A1GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor(PHEMT).The amplifier isfully monolithic,with all matching,biasing,and DC block circuitry included on the chip.Thepower amplifier has an average power gain of 19dB over 6~18GHz.At operation frequenciesfrom 6 to 18GHz,the output power is above 33.3dBm,and the maximum output power of the MMICis 34.7dBm at 10Ghz.The input return loss is less than-10db and the out-put return is lessthan-6dB over operating frequency.This power amplifier has,to our knowledge,the best powergain flatness reported at C-X-Ku-band applications. 展开更多
关键词 High electron mobility transistors Monolithic microwave integrated circuits Semiconducting gallium arsenide
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HIGH-ENERGY PROTON IRRADIATION EFFECTS ON GaAs/Ge SPACE SOLAR CELLS 被引量:9
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作者 R. Wang (The Key Laboratory of Beam Technology and Materials Modification of Ministry of Education, Institute of Low Energy Nuclear Physics, Beijing Normal University Beijing Radiation Center, Beijing 100875, China) S.D. Yao (Department of Technical Phys 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2001年第6期463-466,共4页
This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5-20 MeV at fluence ranging from 1×109 to 7×1013 cm-2, an... This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5-20 MeV at fluence ranging from 1×109 to 7×1013 cm-2, and then their electric parameters were measured at AM0. It was shown that the Isc, Voc and Pmax decrease as the proton energy increasing, and the degradation is relative to proton irradiation-induced defect with a level of Ec-0.41 eV in irradiated GaAs/Ge cells. 展开更多
关键词 GERMANIUM High energy physics IRRADIATION PROTONS Semiconducting gallium arsenide
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Advances in Noble Metal-Decorated Metal Oxide Nanomaterials for Chemiresistive Gas Sensors:Overview 被引量:8
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作者 Li‑Yuan Zhu Lang‑Xi Ou +3 位作者 Li‑Wen Mao Xue‑Yan Wu Yi‑Ping Liu Hong‑Liang Lu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2023年第6期353-427,共75页
Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analys... Highly sensitive gas sensors with remarkably low detection limits are attractive for diverse practical application fields including real-time environmental monitoring,exhaled breath diagnosis,and food freshness analysis.Among various chemiresistive sensing materials,noble metal-decorated semiconducting metal oxides(SMOs)have currently aroused extensive attention by virtue of the unique electronic and catalytic properties of noble metals.This review highlights the research progress on the designs and applications of different noble metal-decorated SMOs with diverse nanostructures(e.g.,nanoparticles,nanowires,nanorods,nanosheets,nanoflowers,and microspheres)for high-performance gas sensors with higher response,faster response/recovery speed,lower operating temperature,and ultra-low detection limits.The key topics include Pt,Pd,Au,other noble metals(e.g.,Ag,Ru,and Rh.),and bimetals-decorated SMOs containing ZnO,SnO_(2),WO_(3),other SMOs(e.g.,In_(2)O_(3),Fe_(2)O_(3),and CuO),and heterostructured SMOs.In addition to conventional devices,the innovative applications like photo-assisted room temperature gas sensors and mechanically flexible smart wearable devices are also discussed.Moreover,the relevant mechanisms for the sensing performance improvement caused by noble metal decoration,including the electronic sensitization effect and the chemical sensitization effect,have also been summarized in detail.Finally,major challenges and future perspectives towards noble metal-decorated SMOs-based chemiresistive gas sensors are proposed. 展开更多
关键词 Noble metal BIMETAL Semiconducting metal oxide Chemiresistive gas sensor Electronic sensitization Chemical sensitization
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Semiconducting single-walled carbon nanotubes synthesized by S-doping 被引量:5
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作者 Z.J.Li L.Wang +2 位作者 Y.J.Su P.Liu Y.F.Zhang 《Nano-Micro Letters》 SCIE EI CAS 2009年第1期9-13,共5页
An approach was presented for synthesis of semiconducting single-walled carbon nanotubes(SWNTs) by sulfur(S) doping with the method of graphite arc discharge. Raman spectroscopy, UV-vis-NIR absorption spectroscopy and... An approach was presented for synthesis of semiconducting single-walled carbon nanotubes(SWNTs) by sulfur(S) doping with the method of graphite arc discharge. Raman spectroscopy, UV-vis-NIR absorption spectroscopy and electronic properties measurements indicated the semconducting properties of the SWNTs samples. Simulant calculation indicated that S doping could induce convertion of metallic SWNTs into semiconducting ones. This strategy may pave a way for the direct synthesis of pure semiconducting SWNTs. 展开更多
关键词 S-doping SINGLE-WALL Carbon nanotubes SEMICONDUCTING Arc discharge
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Effects of W Addition on the Electrochemical Behaviour and Passive Film Properties of Fe-Based Amorphous Alloys in Acetic Acid Solution 被引量:4
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作者 Dan-Dan Liang Xian-Shun Wei +4 位作者 Chun-Tao Chang Jia-Wei Li Yong Wang Xin-Min Wang Jun Shen 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2018年第10期1098-1108,共11页
The electrochemical behaviour and passive film properties of Fe-Cr-Mo-W-C-B-Y amorphous alloys in acetic acid solution were investigated. The potentiodynamic polarisation and Nyquist curves demonstrated that W additio... The electrochemical behaviour and passive film properties of Fe-Cr-Mo-W-C-B-Y amorphous alloys in acetic acid solution were investigated. The potentiodynamic polarisation and Nyquist curves demonstrated that W addition signifi- cantly enhanced the corrosion resistance. Mott-Schottky plots and angle-resolved X-ray photoelectron spectra indicated that passive films with different W contents exhibited dipolar (p-n) semiconducting characteristics separated by fiat-band potentials. The outer and inner oxide layers of the passive films were modified by reducing the acceptor and donor densities. Moreover, W addition favoured the formation of a thicker and more stable passive film to inhibit the dissolution of alloy elements. 展开更多
关键词 Amorphous alloy XPS Mott-Schottky measurement Passive film Semiconducting property Chemical ingredient
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RBC Membrane Camouflaged Semiconducting Polymer Nanoparticles for Near-Infrared Photoacoustic Imaging and Photothermal Therapy 被引量:6
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作者 Dongye Zheng Peiwen Yu +3 位作者 Zuwu Wei Cheng Zhong Ming Wu Xiaolong Liu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2020年第7期218-234,共17页
Semiconducting conjugated polymer nanoparticles(SPNs)represent an emerging class of phototheranostic materi-als with great promise for cancer treatment.In this report,low-bandgap electron donoracceptor(DA)-conjugated ... Semiconducting conjugated polymer nanoparticles(SPNs)represent an emerging class of phototheranostic materi-als with great promise for cancer treatment.In this report,low-bandgap electron donoracceptor(DA)-conjugated SPNs with sur-face cloaked by red blood cell membrane(RBCM)are developed for highly e ective photoacoustic imaging and photothermal therapy.The resulting RBCM-coated SPN(SPN@RBCM)displays remarkable near-infrared light absorption and good photosta-bility,as well as high photothermal conver-sion e ciency for photoacoustic imaging and photothermal therapy.Particularly,due to the small size(<5 nm),SPN@RBCM has the advantages of deep tumor penetration and rapid clearance from the body with no appreciable toxicity.The RBCM endows the SPNs with prolonged systematic circulation time,less reticuloendothelial system uptake and reduced immune-recognition,hence improving tumor accumulation after intravenous injection,which provides strong photoacoustic signals and exerts excellent photothermal therapeutic e ects.Thus,this work provides a valuable paradigm for safe and highly e cient tumor pho-toacoustic imaging and photothermal therapy for further clinical translation. 展开更多
关键词 Semiconducting conjugated polymer nanoparticles Red blood cell membrane camouflage Deep tumor penetration Photoacoustic imaging Photothermal therapy
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Effect of Chloride on Semiconducting Properties of Passive Films Formed on Supermartensitic Stainless Steel in NaHCO_3 Solution 被引量:4
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作者 HAN Xiao-chen LI Jun +2 位作者 ZHAO Kun-yu ZHANG Wei SU Jie 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2013年第5期74-79,共6页
The effects of chloride ion on the electrochemical behavior and the semiconducting properties of the passive film on supermartensitic stainless steel in 0.5 mol/L NaHCO_3 solution were investigated using potentiodynam... The effects of chloride ion on the electrochemical behavior and the semiconducting properties of the passive film on supermartensitic stainless steel in 0.5 mol/L NaHCO_3 solution were investigated using potentiodynamic polarization, the potentiostatic current transients and Mott-Schottky analysis. The results indicated that chloride ion narrowed passivation region and improved pitting susceptibility. The steady state current densities were independent of film-formed potentials, which was in good agreement with the assumption of the point defect model (PDM). The capacitance results showed the fact that the passive films had a multilayer character. The defect density decreased with increasing passive film formation potential. The chloride ion induced changes of the acceptor densities and donor densities of the passive films. 展开更多
关键词 supermartensitic stainless steel passive film capacitance measurement semiconducting property chloride ion
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Influence of Poly(methyl metacrylate) Addition on Resistive Switching Performance of P3HT/P(VDF-TrFE) Blend Films
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作者 翁军辉 胡静航 +2 位作者 张剑驰 蒋玉龙 朱国栋 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2017年第2期200-206,I0002,共8页
Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usuall... Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly(methyl metacrylate) (PMMA) was introduced as additive into P3HT/P(VDF-TrFE) semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations. 展开更多
关键词 Resistive switching Ferroelectric/semiconducting blend film Spin coating Phase separation
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Simple Preparation, Structure and Conductivity of Nickel(Ⅱ) Benzenetricarboxylate Ni_3(BTC)_2·12H_2O 被引量:4
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作者 谭海燕 刘城 +1 位作者 王朝晖 吴金平 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2014年第3期401-406,共6页
Proton-conductive crystalline metal-organic framework nickel(Ⅱ) benzenetricar- boxylate Ni3(BTC)2A12H2O(MOF-Ni) was prepared by the reaction of nickel(Ⅱ) nitrate and 1,3,5- benzenetricarboxylic(BTC) acid i... Proton-conductive crystalline metal-organic framework nickel(Ⅱ) benzenetricar- boxylate Ni3(BTC)2A12H2O(MOF-Ni) was prepared by the reaction of nickel(Ⅱ) nitrate and 1,3,5- benzenetricarboxylic(BTC) acid in a mixed solvent of N,N-dimethylformamide(DMF)/C2H5OH/ H2O (1:1:1, ν/ν) at low temperature and short reaction time. It was characterized by thermo- gravimetric analyses (TG), FT-IR and N2 adsorption-desorption. Single-crystal X-ray diffraction analysis indicated that the complex belongs to monoclinic system, space group C2 with α = 17.407(6), b = 12.878(5), c = 6.542(2) A, β = 112.07°, V = 1359.0(8) A^3, Dc = 1.971 g/cm3, μ = 2.166 mm^-1 and Z = 2. Linear polarization resistance (LPR) analysis showed that the complex possesses semiconducting properties. 展开更多
关键词 metal-organic framework solvothermal synthesis mixed solution semiconducting properties
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A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate 被引量:2
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作者 Mussaab I.Niass Muhammad Nawaz Sharif +6 位作者 Yifu Wang Zhengqian Lu Xue Chen Yipu Qu Zhongqiu Du Fang Wang Yuhuai Liu 《Journal of Semiconductors》 EI CAS CSCD 2019年第12期126-129,共4页
In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitution... In this paper,an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1-xN layers was designed,as well as a lowest reported substitutional accepter and donor concentration up to NA=5.0×10^17 cm^-3 and ND=9.0×10^16 cm^-3 for deep ultraviolet lasing was achieved.The structure was assumed to be grown over bulk AIN substrate and operate under a continuous wave at room temperature.Although there is an emphasizing of the suitability for using boron nitride wide band gap in the deep ultraviolet region,there is still a shortage of investigation about the ternary BGaN in aluminum-rich AIGaN alloys.Based on the simulation,an average local gain in quantum wells of 1946 cm^-1,the maximum emitted power of 2.4 W,the threshold current of 500 mA,a slope efficiency of 1.91 W/A as well as an average DC resistance for the V-I curve of(0.336Ω)had been observed.Along with an investigation regarding different EBL,designs were included with tapered and inverse tapered structure.Therefore,it had been found a good agreement with the published results for tapered EBL design,with an overweighting for a proposed inverse tapered EBL design. 展开更多
关键词 laser diodes semiconducting aluminum compounds heterojunction semiconductor devices quantum wells semiconducting ternary compounds
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Semiconducting Mineral Photocatalytic Regeneration of Fe^(2+) Promotes Carbon Dioxide Acquisition by Acidithiobacillus ferrooxidans 被引量:2
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作者 LI Yan LU Anhuai +2 位作者 WANG Xin DING Hongrui WANG Changqiu 《Acta Geologica Sinica(English Edition)》 SCIE CAS CSCD 2013年第3期761-766,共6页
Chemoautotrophic organisms have once been excluded from the development of universally applicable CO2 fixation technology due to its low production yields of biomass. In this study, we used Acidithiobacillusferrooxida... Chemoautotrophic organisms have once been excluded from the development of universally applicable CO2 fixation technology due to its low production yields of biomass. In this study, we used Acidithiobacillusferrooxidans (A.f.) as a model chemoautotrophic microorganism to test the hypothesis that exogenetic photoelectrons from semiconducting mineral photocatalysis can enable the regeneration of Fe^2+ that could be then used by A.f. and support its growth. In a simulated electrochemical system, where exogenetic electrons were provided by an electrochemical approach, an accelerated growth rate of A.f. was observed as compared with that in traditional batch cultivation. In a coupled system, where light-irradiated natural rutile provided the primary electron source to feed A.f., the bacterial growth rate as well as the subsequent CO2 fixation rate was demonstrated to be in a light-dependent manner. The sustaining flow of photogenerated electrons from semiconducting mineral to bacteria provided an inexhaustible electron source for chemoautotrophic bacteria growth and CO2 fixation. This finding might contribute to the development of novel effective CO2 fixation technology. 展开更多
关键词 CO2 fixation PHOTOCATALYSIS chemoautotrophic organisms semiconducting mineral
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