Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality i...Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.展开更多
Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was pr...Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD.Thanks to the formation of a depletion layer on the Sn-Ga_(2)O_(3) side at the homogeneous interface,a self-powered supply with an open-circuit voltage of~100 mV is successfully achieved.Moreover,a peculiar phenomenon that the rectification direction of theβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) n-N homojunction device can be controlled by light irradiation is also worthy of attention,which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation.In this case,the photo-to-dark current ratio can reach up to 1.19×105 under the voltage of 5 V.To a certain extent,this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.展开更多
This article reviews the techniques and applications of electrospinning for the fabrication of nanofibrous sensors. Considering that nanosensors require a large specific surface area and a continuous structure for the...This article reviews the techniques and applications of electrospinning for the fabrication of nanofibrous sensors. Considering that nanosensors require a large specific surface area and a continuous structure for the conduction of current signals, electrospun nanofibers have the dominant advantage. The device preparation is mainly divided into surface treatment and high-temperature sintering, which are, respectively, used for preparing composite conductive fibers and inorganic semiconductor fibers. Typical applications include pressure sensing, gas sensing, photoelectric sensing, and temperature sensing. In addition, nano-selfpowered systems have been mentioned to emphasize the good performance of smart nanosystems that do not require external power. In addition, we have summarized some existing methods and suggestions for increasing the specific surface area and presented constructive ideas for the future development of these devices.展开更多
Two-dimensional(2D)layered materials have been considered promising candidates for next-generation optoelectronics.However,the performance of 2D photodetectors still has much room for improvement due to weak light abs...Two-dimensional(2D)layered materials have been considered promising candidates for next-generation optoelectronics.However,the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology.Notably,2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics.In this work,we present the patterned assembly of MoSe_(2)/pyramid Si mixed-dimensional van der Waals(vdW)heterojunction arrays for broadband photodetection and imaging.Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction,the photodetector demonstrates a wide spectral response range from 265 to 1550 nm,large responsivity up to 0.67 A·W^(-1),high specific detectivity of 1.84×10^(13)Jones,and ultrafast response time of 0.34/5.6μs at 0 V.Moreover,the photodetector array exhibits outstanding broadband image sensing capability.This study offers a novel development route for high-performance and broadband photodetector array by MoSe_(2)/pyramid Si mixed-dimensional heterojunction.展开更多
基金supported by the National Natural Science Foundation of China(Nos.12064047 and 11864044)the Key Programme of Yunnan Fundamental Research Projects(No.202201AS070010)the Major Science and Technology Projects in Yunnan Province(No.202202AB080019).
文摘Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics.However,various defects are generated by the solution-based film quality inevitably produces during the crystallization process,which leads to non-radiative recombination and interface mismatch.In this work,polyvinylpyrrolidone(PVP)molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector.Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI_(3)surface,which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules.The interfacial passivation for the undercoordinated Pb^(2+)defects was also verified via first-principles calculations.The electron injection barrier can be regulated via interfacial molecule engineering,leading to the result that the dark current is suppressed by five orders of magnitude to 1.57310−11 A,and the specific detectivity improved by about three orders of magnitude reaching 2.9310^(12)Jones.These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors.
基金supported by the Joints Fund of the National Natural Science Foundation of China(Grant No.U23A20349)the Young Scientists Fund of the National Natural Science Foundation of China(Grant Nos.62204126,62305171,62304113)+3 种基金the Natural Science Foundation of Jiangsu Province(Grant Nos.BK20230361,BK20241464)the Natural Science Foundation of Jiangsu Higher Education Institutions(Grant No.23KJB510017)the Jiangsu Provincial Team of Innovation and Entrepreneurship(Grant No.JSSCTD202351)the Natural Science Research Startup Foundation of Recuring Talents of Nanjing University of Posts and Telecommunications(Grant No.XK1060921119).
文摘Apart from the inherent material characteristics,the regulation of device performance is also inseparable from the interface states for photodetector(PD)devices.In this paper,aβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) film was prepared by a facile-plasma enhanced chemical vapor deposition technology to explore the impact of n-N homogeneous interface design on the performance of PD.Thanks to the formation of a depletion layer on the Sn-Ga_(2)O_(3) side at the homogeneous interface,a self-powered supply with an open-circuit voltage of~100 mV is successfully achieved.Moreover,a peculiar phenomenon that the rectification direction of theβ-Ga_(2)O_(3)/Sn-Ga_(2)O_(3) n-N homojunction device can be controlled by light irradiation is also worthy of attention,which should be fundamentally attributed to the reversal of Fermi-levels controlled by light irradiation.In this case,the photo-to-dark current ratio can reach up to 1.19×105 under the voltage of 5 V.To a certain extent,this work implies the potential application prospects of the homogeneous structural interface design through same-type doped concentrations difference on the high-performance PDs.
基金supported by the National Natural Science Foundation of China(11974182,12374257)the Fundamental Research Funds for the Central Universities(NC2022008)+1 种基金the Funding for Outstanding Doctoral Dissertation of Nanjing University of Aeronautics and Astronautics(NUAA)(BCXJ22-14)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX22_0326)。
文摘高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参数包括约7个量级的开关比、292.2 mA W^(-1)的响应度、6.9×10^(13)Jones的比探测率,以及微秒量级的快速响应速度(上升时间16.4μs,下降时间465.1μs).特别是10μW cm^(-2)的微弱紫外光时接近99.3%的外量子效率.此外,本文系统研究了MgO纳米薄膜和表面修饰AgNWs对探测器件性能增强的机理.作为自驱动光接收器,该光电二极管被进一步集成到能够实时传输信息的紫外通信系统中.此外,基于AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO的同质结9×9阵列显示出均匀的光响应分布,可用作具有良好空间分辨率的成像传感器.这项研究有望为设计高性能紫外光检测器提供一条具有低功耗和可大规模建造的途径.
基金supported by the National Natural Science Foundation of China(Grant No.51673103)the Facility Horticulture Laboratory of Universities in Shandong Program(Grant No.2018YY053)
文摘This article reviews the techniques and applications of electrospinning for the fabrication of nanofibrous sensors. Considering that nanosensors require a large specific surface area and a continuous structure for the conduction of current signals, electrospun nanofibers have the dominant advantage. The device preparation is mainly divided into surface treatment and high-temperature sintering, which are, respectively, used for preparing composite conductive fibers and inorganic semiconductor fibers. Typical applications include pressure sensing, gas sensing, photoelectric sensing, and temperature sensing. In addition, nano-selfpowered systems have been mentioned to emphasize the good performance of smart nanosystems that do not require external power. In addition, we have summarized some existing methods and suggestions for increasing the specific surface area and presented constructive ideas for the future development of these devices.
基金This work was financially supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,and 11974016)the Natural Science Foundation of Henan Province,China(No.202300410376)+1 种基金Henan Provincial Key Science and Technology Research Projects(No.212102210131)the Open Fund of National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials(No.HKDNM2021012).
文摘Two-dimensional(2D)layered materials have been considered promising candidates for next-generation optoelectronics.However,the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology.Notably,2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics.In this work,we present the patterned assembly of MoSe_(2)/pyramid Si mixed-dimensional van der Waals(vdW)heterojunction arrays for broadband photodetection and imaging.Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction,the photodetector demonstrates a wide spectral response range from 265 to 1550 nm,large responsivity up to 0.67 A·W^(-1),high specific detectivity of 1.84×10^(13)Jones,and ultrafast response time of 0.34/5.6μs at 0 V.Moreover,the photodetector array exhibits outstanding broadband image sensing capability.This study offers a novel development route for high-performance and broadband photodetector array by MoSe_(2)/pyramid Si mixed-dimensional heterojunction.
