We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this...We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method,electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.展开更多
文摘We present a quantum study on the electrical behavior of the self-switching diode(SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method,electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero,reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters.
