Detecting target echo in the existence of self-screen jamming is a challenging work for radar system, especially when digital radio frequency memory(DRFM) technique is employed that mixes the jamming and target echo b...Detecting target echo in the existence of self-screen jamming is a challenging work for radar system, especially when digital radio frequency memory(DRFM) technique is employed that mixes the jamming and target echo both in spatial and time-frequency domain. The conventional way to solve this problem would suffer from performance degradation when physical target(PT) and false target(FT) are superposed in time. In this paper, we propose a new spatial filter according to the different correlation characteristic between PT and FT. The filter takes the ratio of expected signal power to expected jamming and noise power as the objective function under the constant filter modulus constraint. The optimal filter coefficients are derived with a generalized rayleigh quotient approach. Moreover, we analytically compute the target detection probability and demonstrate the applicability of the proposed method to the correlation coefficient. Monte Carlo simulations are provided to corroborate the proposed studies. Furthermore, the proposed method has simple architecture and low computation complexity, making it easily applied in modern radar system.展开更多
The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization superjunct...The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization superjunctions.However,the current researches on the polarization mechanism of GaN-based materials are not sufficient.In this paper,we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design(TCAD) simulation.The selfscreening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively.We believe that the formation of high-density two-dimensional electron gas(2 DEG) in GaN is the accumulation of screening charges.We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.展开更多
文摘Detecting target echo in the existence of self-screen jamming is a challenging work for radar system, especially when digital radio frequency memory(DRFM) technique is employed that mixes the jamming and target echo both in spatial and time-frequency domain. The conventional way to solve this problem would suffer from performance degradation when physical target(PT) and false target(FT) are superposed in time. In this paper, we propose a new spatial filter according to the different correlation characteristic between PT and FT. The filter takes the ratio of expected signal power to expected jamming and noise power as the objective function under the constant filter modulus constraint. The optimal filter coefficients are derived with a generalized rayleigh quotient approach. Moreover, we analytically compute the target detection probability and demonstrate the applicability of the proposed method to the correlation coefficient. Monte Carlo simulations are provided to corroborate the proposed studies. Furthermore, the proposed method has simple architecture and low computation complexity, making it easily applied in modern radar system.
基金Project supported by the Key Research and Development Program of Guangdong Province,China(Grant No.2020B010174003)。
文摘The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization superjunctions.However,the current researches on the polarization mechanism of GaN-based materials are not sufficient.In this paper,we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design(TCAD) simulation.The selfscreening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively.We believe that the formation of high-density two-dimensional electron gas(2 DEG) in GaN is the accumulation of screening charges.We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.
