Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction ...Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.展开更多
A monolayer of Sr2Nb3Oio(SNO)is deposited on the Pt/Ti/SiCWSi(Pt?Si)or Pt/Ti/polyimide(Pt-Pl)substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline(Nai_xKx)NbO3(NK...A monolayer of Sr2Nb3Oio(SNO)is deposited on the Pt/Ti/SiCWSi(Pt?Si)or Pt/Ti/polyimide(Pt-Pl)substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline(Nai_xKx)NbO3(NKN)film at 350℃.The crystalline NKN film is grown along the[001]direction on the SNO/Pt-Si(or SNO/Pt-PI)substrate.Due to the presence of oxygen vacancies in the SNO seed-layer,the NKN film exhibits low ferroelectric properties and large leakage current.To ameliorate these properties,the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300℃,which removes the oxygen vacancies.Consequently,the NKN film deposited on this substrate exhibits promising electrical properties,namely a dielectric constant of 278,dissipation factor of 1.7%,a piezoelectric 8nstant of 175 pm`V^-1,and a leakage current density of 6.47 x 10^-7 A cm^-2 at-0.2 MV crrT1.Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350°C.Hence,the NKN films grown on the SNO seed-layer at 350°C can be applied to electronic devices with flexible polymer substrates.展开更多
基金supported by the National Natural Science Foundation of China(62305064)the Research Start-up Fund for Young Teachers of Fuzhou University(602592)+1 种基金the Young and Middleaged Teacher Education Research Project of Fujian Province(JAT220011)the Fujian Science&Technology Innovation Laboratory Optoelectronic Information of China(Grant No.2021ZZ124).
文摘Sb_(2)Se_(3)solar cells have achieved a power conversion efficiency(PCE)of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition(VTD)processed Sb_(2)Se_(3)solar cells.To overcome the VOC-deficit problem of VTD processed Sb_(2)Se_(3)solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2(S,Se)3seed layer(WBSL)at CdS/Sb_(2)Se_(3)heterojunction interface to improve the PCE of Sb_(2)Se_(3)solar cells.The analysis results show that the introduced Sb2(S,Se)3seed layer can enhance the[001]orientation of Sb_(2)Se_(3)thin films,broaden the band gap of heterojunction interface,and realize a"Spike-like"conduction band alignment with ΔE_(c)=0.11 eV.In addition,thanks to the suppressed CdS/Sb_(2)Se_(3)interface reaction after WBSL application,the depletion region width of Sb_(2)Se_(3)solar cells is widened,and the quality of CdS/Sb_(2)Se_(3)interface and the carrier transporting performance of Sb_(2)Se_(3)solar cells are significantly improved as well.Moreover,the harmful Se vacancy defects near the front interface of Sb_(2)Se_(3)solar cells can be greatly diminished by WBSL.Finally,the PCE of Sb_(2)Se_(3)solar cells is improved from 7.0%to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb_(2)Se_(3)solar cells.This work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.
文摘A monolayer of Sr2Nb3Oio(SNO)is deposited on the Pt/Ti/SiCWSi(Pt?Si)or Pt/Ti/polyimide(Pt-Pl)substrate by using the Langmuir-Blodgett method and employed as a seed-layer for the growth of a crystalline(Nai_xKx)NbO3(NKN)film at 350℃.The crystalline NKN film is grown along the[001]direction on the SNO/Pt-Si(or SNO/Pt-PI)substrate.Due to the presence of oxygen vacancies in the SNO seed-layer,the NKN film exhibits low ferroelectric properties and large leakage current.To ameliorate these properties,the SNO/Pt-Si substrate is annealed in a 50 Torr oxygen atmosphere at 300℃,which removes the oxygen vacancies.Consequently,the NKN film deposited on this substrate exhibits promising electrical properties,namely a dielectric constant of 278,dissipation factor of 1.7%,a piezoelectric 8nstant of 175 pm`V^-1,and a leakage current density of 6.47 x 10^-7 A cm^-2 at-0.2 MV crrT1.Similar electrical properties are obtained from the NKN film grown on the flexible SNO/Pt-PI substrate at 350°C.Hence,the NKN films grown on the SNO seed-layer at 350°C can be applied to electronic devices with flexible polymer substrates.
