采用金属硅化物扩散层分隔技术制备了源漏区具有不同硅化物挡板尺寸的环型栅PD SOI MOSFETs,通过CLP实验数据分析器件的硅化物隔离档板的尺寸对SOI NMOSTET抗ESD能力以及对多指栅ggnMOS管子导通均匀性的影响。结果显示,采用了硅化物隔...采用金属硅化物扩散层分隔技术制备了源漏区具有不同硅化物挡板尺寸的环型栅PD SOI MOSFETs,通过CLP实验数据分析器件的硅化物隔离档板的尺寸对SOI NMOSTET抗ESD能力以及对多指栅ggnMOS管子导通均匀性的影响。结果显示,采用了硅化物隔离挡板的管子二次击穿电压明显提高;随着挡板尺寸增加,多指栅的导通均匀性得到明显改善。展开更多
A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the incr...A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_（be） at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage,and the increase of the external resistor R_e can remarkably reduce the voltage drops added to the device and improve the durability of the device.In the final analysis,the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.展开更多
文摘采用金属硅化物扩散层分隔技术制备了源漏区具有不同硅化物挡板尺寸的环型栅PD SOI MOSFETs,通过CLP实验数据分析器件的硅化物隔离档板的尺寸对SOI NMOSTET抗ESD能力以及对多指栅ggnMOS管子导通均匀性的影响。结果显示,采用了硅化物隔离挡板的管子二次击穿电压明显提高;随着挡板尺寸增加,多指栅的导通均匀性得到明显改善。
基金Project supported by the National Natural Science Foundation of China(No.60776034).
文摘A study on the influence of the external resistor and the external voltage source during the injection of the electromagnetic pulse（EMP） into the bipolar transistor（BJT） is carried out.Research shows that the increase of the external resistor R_b at base makes the burnout time of the device decrease slightly,the increase of the external voltage source V_（be） at base can aid the damage of the device when the magnitude of the injecting voltage is relatively low and has little influence when the magnitude is sufficiently high causing the device appearing the PIN structure damage,and the increase of the external resistor R_e can remarkably reduce the voltage drops added to the device and improve the durability of the device.In the final analysis,the effect of the external circuit component on the BJT damage is the influence on the condition which makes the device appear current-mode second breakdown.
