Scandium-doped aluminum nitride(AlScN)with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride(AlN),while maintaining a relativ...Scandium-doped aluminum nitride(AlScN)with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride(AlN),while maintaining a relatively large bandgap.It provides a promising platform for photonic circuits and facilitates the seamless integration of passive and active functional devices.Here,we present the design,fabrication,and characterization of Al_(0.904)Sc_(0.096)N electro-optic(EO)micro-ring modulators,introducing active functionalities to the chip-scale AlScN platform.These waveguide-integrated EO modulators utilize sputtered Al_(0.904)Sc_(0.096)N thin films as the light-guiding medium,with the entire fabrication process being compatible with complementary metaloxide-semiconductor(CMOS)technology.We extract the in-device effective EO coefficient of 2.86 pm/V at12 GHz.The devices show a minimum half-wave voltage-length product of 3.12 V·cm at a modulation frequency of 14 GHz,and achieve a 3-dB modulation bandwidth of approximately 22 GHz.Our work provides a promising modulation scheme for cost-effective silicon-integrated photonics systems.展开更多
A series of divinylphenyl-acryloyl chloride copolymers(PDVB-co-PACl)is synthesized via atom transfer radical polymerization employing tert-butyl acrylate and divinylbenzene as monomers.PDVB-co-PACl is utilized to graf...A series of divinylphenyl-acryloyl chloride copolymers(PDVB-co-PACl)is synthesized via atom transfer radical polymerization employing tert-butyl acrylate and divinylbenzene as monomers.PDVB-co-PACl is utilized to graft on the surface of spherical aluminum nitride(AlN)to prepare functionalized AlN(AlN@PDVB-co-PACl).Polymethylhydrosiloxane(PMHS)is then used as the matrix to prepare thermally conductive AlN@PDVB-co-PACl/PMHS composites with AlN@PDVB-co-PACl as fillers through blending and curing.The grafting of PDVB-co-PACl synchronously enhances the hydrolysis resistance of AlN and its interfacial compatibility with PMHS matrix.When the molecular weight of PDVB-co-PACl is 5100 g mol^(-1)and the grafting density is 0.8 wt%,the composites containing 75 wt%of AlN@PDVB-co-PACl exhibit the optimal comprehensive performance.The thermal conductivity(λ)of the composite is 1.14 W m^(-1)K^(-1),which enhances by 20%and 420%compared to theλof simply physically blended AlN/PMHS composite and pure PMHS,respectively.Meanwhile,AlN@PDVB-co-PACl/PMHS composites display remarkable hydrothermal aging resistance by retaining 99.1%of itsλafter soaking in 90°C deionized water for 80 h,whereas theλof the blended AlN/PMHS composites decreases sharply to 93.7%.展开更多
An experimental study on the heating of a mixture of aluminum and lithium hydroxide （LiOH） powders in a reductive bed under air atmosphere is reported. The formation of aluminum nitride （A1N） during this process w...An experimental study on the heating of a mixture of aluminum and lithium hydroxide （LiOH） powders in a reductive bed under air atmosphere is reported. The formation of aluminum nitride （A1N） during this process was the focus of this study. The formation of A1N was achieved using LiOH as an additive and heating the sample in a resistance furnace in a specially designed double crucible within a bed of a mixture of coke and filamentous calcium. The temperature range of the reaction was between 700℃ and 1100℃. The optimum temperature of 1100℃ and the optimum LiOH amount （Swt%） required to achieve maximum yield were determined by powder X-ray diffraction （XRD） analysis. Scanning electron microscopy （SEM） micrographs clearly indicated the transformation of grain structures from rods （700℃） to cauliflower shapes （1100℃）.展开更多
Aluminum nitride （AlN）/borosilicate glass composites were prepared by the tape casting process and hot-press sintered at 950 ℃ with AIN and SiO2-B203-ZnO-Al2O3-Li2O glass as starting materials. We characterized and...Aluminum nitride （AlN）/borosilicate glass composites were prepared by the tape casting process and hot-press sintered at 950 ℃ with AIN and SiO2-B203-ZnO-Al2O3-Li2O glass as starting materials. We characterized and analyzed the variation of the microstructure, bulk density, porosity, dielectric constant, thermal conductivity and thermal expansion coefficient （TEC） of the ceramic samples as a function of AIN content. Results show that AIN and SiO2-B2O3-ZnO-Al2O3-Li2O glass can be sintered at 950 ℃, and ZnAI204 and Zn2SiO4 phase precipitated to form glass-ceramic. The performance of the ceramic samples was determined by the composition and bulk density of the composites. Lower AlN content was found redounding to liquid phase sintering, and higher bulk density of composites can be accordingly obtained. With the increase of porosity, corresponding decreases were located in the dielectric constant, thermal conductivity and TEC of the ceramic samples. When the mass fraction of AlN was 40%, the ceramic samples possessed a low dielectric constant （4.5-5.0）, high thermal conductivity （11.6 W/（m.K）） and a proper TEC （3.0× 10^-6 K^-1 which matched that of silicon）. The excellent performance makes this kind of low temperature co-fired ceramic a promising candidate for application in the micro-electronics packaging industry.展开更多
Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation.However,leaking hydrogen in high-temperature production processes can cause an explosion,which endangers ...Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation.However,leaking hydrogen in high-temperature production processes can cause an explosion,which endangers production workers and surrounding areas.To detect leaks early,we used a sensor material based on a wide bandgap aluminum nitride(AlN)that can withstand a high-temperature environment.Three unique AlN morphologies(rod-like,nest-like,and hexagonal plate-like)were synthesized by a direct nitridation method at 1400℃usingγ-AlOOH as a precursor.The gas-sensing performance shows that a hexagonal plate-like morphology exhibited p-type sensing behavior and showed good repeatability as well as the highest response(S=58.7)toward a 750 ppm leak of H2 gas at high temperature(500°C)compared with the rod-like and nest-like morphologies.Furthermore,the hexagonal plate-like morphology showed fast response and recovery times of 40 and 82 s,respectively.The surface facet of the hexagonal morphology of AlN might be energetically favorable for gas adsorption–desorption for enhanced hydrogen detection.展开更多
Among nitride fibers,aluminum nitride(AlN)fibers have been developed for various advanced applications due to their mechanical flexibility,high thermal conductivity,and excellent electrical insulation and chemical sta...Among nitride fibers,aluminum nitride(AlN)fibers have been developed for various advanced applications due to their mechanical flexibility,high thermal conductivity,and excellent electrical insulation and chemical stability.This article presents an overview on the recent progress of AlN fibers.The properties of AlN,particularly the thermal conductivity of AlN in polymer matrix composites are introduced.Afterward,two major approaches,carbothermal reduction and nitriding polycrystalline alumina fiber,for the preparation of AlN fibers are discussed.The carbothermal reduction includes electrospinning,solution blow spinning,and chemical vapor deposition.Furthermore,some perspectives on the future directions for the preparation and application of fibrous AlN are highlighted.This review is expected to provide readers with valuable guidance on the preparation of AlN fibers and inspire researchers to explore more potential applications.展开更多
Aluminum Nitride(ALN)is a high thermal conductivity material which is being used with increasing frequency in packaging applications for high brightness LEDs(HBLED).This paper introduce Aluminum Nitride substrate fabr...Aluminum Nitride(ALN)is a high thermal conductivity material which is being used with increasing frequency in packaging applications for high brightness LEDs(HBLED).This paper introduce Aluminum Nitride substrate fabrication process and different ALN metallization approaches.It is clear that the most technically appropriate metallization approach for HBLED packging is DPC.This paper explain why the cost of ALN substrate is so high and give the future of ALN in HBLED applications.展开更多
Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon...Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.展开更多
Wear behavior and mechanism of plasma nitrided steel oscillating against a heat-treated and an untreated aluminum bronze alloy were investigated using an Optimol SRV tribometer.The influence of heat treatment on the m...Wear behavior and mechanism of plasma nitrided steel oscillating against a heat-treated and an untreated aluminum bronze alloy were investigated using an Optimol SRV tribometer.The influence of heat treatment on the mechanical properties of the alloy was evaluated.Furthermore,the wear debris was also examined to understand the wear mechanisms.The results show that a 220-230μm nitrided layer,which was harder than the substrate,was obtained on the steel surface.The tensile strength and hardness of the alloy are found to be significantly improved by the heat treatment associated with low impact toughness.The heat treatment of the alloy did not obviously decrease the friction coefficient of the nitrided steel-bronze couple.However,the wear loss of the nitrided steel increased when it mated with the treated bronze by a severe three-body abrasion.The nitrided steel was mainly damaged by fatigue spalling.Under plane contact conditions,the wear debris was mainly generated from the bronze part and can escape from the interface before being oxidized,leading to the phase structure of all the debris being copper rather than copper oxides.展开更多
Thermal stabilities of diethylaluminum azide were studied by means of theoretical analysis and expriments.The results have shown that diethylaluminum and azid be heated to vigorous refluxing under vacuum(400 Pa) at te...Thermal stabilities of diethylaluminum azide were studied by means of theoretical analysis and expriments.The results have shown that diethylaluminum and azid be heated to vigorous refluxing under vacuum(400 Pa) at temperature as high as 420℃ without incident of explosion and decomposes smoothly during 460 ～580℃ to form nanometric particles of aluminum nitride in the aerosol synthesis reactor. A new way of preparing nanometric parties of aluminum nitrideis found.展开更多
Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor. The average size of aluminum nitride particle is 0.11 μm measured ...Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor. The average size of aluminum nitride particle is 0.11 μm measured by scanning electric mirror (SEM), and the purity is at least over 90% evaluated by X-Ray diffraction (XRD). The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3. Typical experimental parameters such as the feed rate of raw material, the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given.展开更多
Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum...Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum nitride ceramic(DF/AlN) composite has reached 2.04 W/cm·K, 73%greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy(SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses of diamond films were also studied. The unusual stability and very good adhesion of diamond films on AlN ceramic substrates obtained are attributed to the formation of aluminum carbide.展开更多
Aluminum nitride （AlN） nanobelts were successfully synthesized in high yield through a chloride assisted vapor-solid process. X-ray diffraction, transmission electron microscopy, and selected area electronic diffrac...Aluminum nitride （AlN） nanobelts were successfully synthesized in high yield through a chloride assisted vapor-solid process. X-ray diffraction, transmission electron microscopy, and selected area electronic diffraction demonstrate that the as-prepared nanobelts are pure, structurally uniform and single crystalline, and can be indexed to hexagonal wurtzite structure. The micro observations show that there exist no defects in the obtained nanobelts. The growth direction of the nanobelts is along [0001]. The frequency spectra of the relative dielectric constant and of the dielectric loss were measured in the frequency range of 50 Hz to 5 MHz. Analysis of these spectra indicates that the interface in samples has great influence on the dielectric behavior of samples. As compared with AlN micropowders, AlN nanobelts have much higher relative dielectric constant, especially at low frequencies at room temperature.展开更多
An aerosol process for making aluminum nitride nano-powder by decompositionof single compound diethylalumimm az-ide was described. X-ray diffraction (XRD) and transmissionelectron microscopy (TEM) were used to study c...An aerosol process for making aluminum nitride nano-powder by decompositionof single compound diethylalumimm az-ide was described. X-ray diffraction (XRD) and transmissionelectron microscopy (TEM) were used to study characters of the A1N powder. It is shown that theprocess can produce spherical A1N powder with mean particle diameters ranging from 10 to 50 nm at500-800°C. The generated amorphous A1N powder is characterized by a BET (Brunauer-Emmett-Teller)surface area of 103 m2/g and is very reactive to moisture.展开更多
The study aims to identify the potential acute effects of suspended aluminum nitride（Al N）nanoparticles（NPs） on soluble microbial products（SMP） of activated sludge.Cultured activated sludge loaded with 1,10,50,1...The study aims to identify the potential acute effects of suspended aluminum nitride（Al N）nanoparticles（NPs） on soluble microbial products（SMP） of activated sludge.Cultured activated sludge loaded with 1,10,50,100,150 and 200 mg/L of Al N NPs were carried out in this study.As results showed,Al N NPs had a highly inverse proportionality to bacterial dehydrogenase and OUR,indicating its direct toxicity to the activated sludge viability.The toxicity of Al N NPs was mainly due to the nano-scale of Al N NPs.In SMP,Al N NPs led to the decrease of polysaccharide and humic compounds,but had slight effects on protein.The decrease of tryptophan-like substances in SMP indicated the inhibition of Al N NPs on the bacterial metabolism.Additionally,Al N NPs reduced obviously the molecular weight of SMP,which might be due to the nano-scale of Al N.展开更多
AlN powders were synthesized by carbothermal reduction method from aluminum nitrate and glucose. The effect of urea on the preparation and nitridation of the precursors was studied. It is found that urea can affect th...AlN powders were synthesized by carbothermal reduction method from aluminum nitrate and glucose. The effect of urea on the preparation and nitridation of the precursors was studied. It is found that urea can affect the morphology and composition of the precursor as well as the nitridation process. During the nitridation process of the precursor prepared without urea, α-Al 2O 3 and AlON are detected and a high temperature(1 600 ℃) is needed for a complete conversion. While for the precursor prepared with urea, a complete conversion is got at a relatively low temperature(1 400 ℃) and AlN is synthesized directly from γ-Al 2O 3, with no sign of the formation of α-Al 2O 3 and AlON. AlN powders synthesized from the precursor prepared without urea agglomerate badly, while the powders synthesized from the precursor prepared with urea are soft aggregates of fine particle, which can be easily dispersed.展开更多
Nitriding of surface of aluminum alloys was carried out with using an electron-beam-excited-plasma (EBEP) technique. The EBEP is sustained by electron impact ionization with energetic electron beam. Two kinds of subst...Nitriding of surface of aluminum alloys was carried out with using an electron-beam-excited-plasma (EBEP) technique. The EBEP is sustained by electron impact ionization with energetic electron beam. Two kinds of substrates, aluminum alloys AA5052 and AA5083, were exposed to the down flow of EBEP source at 843 K for 45min. The specimens were characterized with respect to following properties: crystallographic structure (XRD), morphology (SEM) and the cross sectional microstructures of the nitrided layer was observed using a scanning electron microscopy (SEM). There are some A12O3 particles on the surface of the nitrided AA5052 and AA5083. The A1N layers were formed on the substrates with the thickness of 4.5 fi m for AA5052 and 0.5 /z m for AA5083 . A relatively uniform nitrided surface layer composed of A1N can be observed on the AA5052 substrate. The grains size near the interfaces between the substrate and A1N layer were smaller than that near the surface. On the surface of A1N layer, the concentration of nitrogen was high and in the middle of A1N layer it had a constant concentration like the aluminum and the concentration was decreased with approaching to the interface. On the surface of nitrided AA5083, a uniform A1N layer was not formed as the reason for the high nitriding temperature.展开更多
This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （...This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （SOAN） substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.展开更多
Cr-Al-N ternary coatings were deposited by arc ion plating method using isolated Cr target and Al target. The influence of AlN content on the phase change was studied by synthesizing Cr1-xAlxN coatings with different ...Cr-Al-N ternary coatings were deposited by arc ion plating method using isolated Cr target and Al target. The influence of AlN content on the phase change was studied by synthesizing Cr1-xAlxN coatings with different x values. The effects of substrate negative bias on the surface morphology,deposition rate and phase structure were investigated. As the aluminum content increases,the structure of(Cr1-xAlx)N changes from B1(NaCl) phase to B4(wurtzite) phase. The critical content of AlN solubilized in B1(NaCl) lattice is close to 0.7. With the increasing pulse negative bias,the deposition rate decreases constantly,the droplet contamination is more serious,the ion-etching effect on coating surface is more obvious,and the change of preferred orientation and the shift of XRD peak take place.展开更多
Interest in energy harvesters has grown rapidly over the last decade. The cantilever shaped piezoelectric energy harvesting beam is one of the most employed designs, due to its simplicity and flexibility for further p...Interest in energy harvesters has grown rapidly over the last decade. The cantilever shaped piezoelectric energy harvesting beam is one of the most employed designs, due to its simplicity and flexibility for further performance enhancement. The research effort in the MEMS Piezoelectric vibration energy harvester designed using three types of cantilever materials, Lithium Niobate (LiNbO3), Aluminum Nitride (AlN) and Zinc Oxide (ZnO) with different substrate materials: aluminum, steel and silicon using COMSOL Multiphysics package were designed and analyzed. Voltage, mechanical power and electrical power versus frequency for different cantilever materials and substrates were modeled and simulated using Finite element method (FEM). The resonant frequencies of the LiNbO3/Al, AlN/Al and ZnO/Al systems were found to be 187.5 Hz, 279.5 Hz and 173.5 Hz, respectively. We found that ZnO/Al system yields optimum voltage and electrical power values of 8.2 V and 2.8 mW, respectively. For ZnO cantilever on aluminum, steel and silicon substrates, we found the resonant frequencies to be 173.5 Hz, 170 Hz and 175 Hz, respectively. Interestingly, ZnO/steel yields optimal voltage and electrical power values of 9.83 V and 4.02 mW, respectively. Furthermore, all systems were studied at different differentiate frequencies. We found that voltage and electrical power have increased as the acceleration has increased.展开更多
基金National Natural Science Foundation of China(U23A20356,62205193,62204149)Shanghai Collaborative Innovation Center of Intelligent Sensing Chip TechnologyNatural Science Foundation of Shanghai Municipality(23ZR1442400)。
文摘Scandium-doped aluminum nitride(AlScN)with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride(AlN),while maintaining a relatively large bandgap.It provides a promising platform for photonic circuits and facilitates the seamless integration of passive and active functional devices.Here,we present the design,fabrication,and characterization of Al_(0.904)Sc_(0.096)N electro-optic(EO)micro-ring modulators,introducing active functionalities to the chip-scale AlScN platform.These waveguide-integrated EO modulators utilize sputtered Al_(0.904)Sc_(0.096)N thin films as the light-guiding medium,with the entire fabrication process being compatible with complementary metaloxide-semiconductor(CMOS)technology.We extract the in-device effective EO coefficient of 2.86 pm/V at12 GHz.The devices show a minimum half-wave voltage-length product of 3.12 V·cm at a modulation frequency of 14 GHz,and achieve a 3-dB modulation bandwidth of approximately 22 GHz.Our work provides a promising modulation scheme for cost-effective silicon-integrated photonics systems.
基金support from the National Natural Science Foundation of China(52473083 and 52403112)the Technological Base Scientific Research Projects(Highly Thermal conductivity Nonmetal Materials),the Natural Science Basic Research Program of Shaanxi(2024JC-TBZC-04)+4 种基金the Shaanxi Province Key Research and Development Plan Project(2023-YBGY-461)the Innovation Capability Support Program of Shaanxi(2024RS-CXTD-57),the Natural Science Foundation of Chongqing,China(2023NSCQ-MSX2547)the Fundamental Research Funds for the Central Universities(D5000240077 and D5000240067)the Innovation Foundation for Doctor Dissertation of Northwestern Polytechnical University(CX2024094)the Analytical&Testing Center of Northwestern Polytechnical University for FT-IR,XRD and TEM tests performed in this work.
文摘A series of divinylphenyl-acryloyl chloride copolymers(PDVB-co-PACl)is synthesized via atom transfer radical polymerization employing tert-butyl acrylate and divinylbenzene as monomers.PDVB-co-PACl is utilized to graft on the surface of spherical aluminum nitride(AlN)to prepare functionalized AlN(AlN@PDVB-co-PACl).Polymethylhydrosiloxane(PMHS)is then used as the matrix to prepare thermally conductive AlN@PDVB-co-PACl/PMHS composites with AlN@PDVB-co-PACl as fillers through blending and curing.The grafting of PDVB-co-PACl synchronously enhances the hydrolysis resistance of AlN and its interfacial compatibility with PMHS matrix.When the molecular weight of PDVB-co-PACl is 5100 g mol^(-1)and the grafting density is 0.8 wt%,the composites containing 75 wt%of AlN@PDVB-co-PACl exhibit the optimal comprehensive performance.The thermal conductivity(λ)of the composite is 1.14 W m^(-1)K^(-1),which enhances by 20%and 420%compared to theλof simply physically blended AlN/PMHS composite and pure PMHS,respectively.Meanwhile,AlN@PDVB-co-PACl/PMHS composites display remarkable hydrothermal aging resistance by retaining 99.1%of itsλafter soaking in 90°C deionized water for 80 h,whereas theλof the blended AlN/PMHS composites decreases sharply to 93.7%.
文摘An experimental study on the heating of a mixture of aluminum and lithium hydroxide （LiOH） powders in a reductive bed under air atmosphere is reported. The formation of aluminum nitride （A1N） during this process was the focus of this study. The formation of A1N was achieved using LiOH as an additive and heating the sample in a resistance furnace in a specially designed double crucible within a bed of a mixture of coke and filamentous calcium. The temperature range of the reaction was between 700℃ and 1100℃. The optimum temperature of 1100℃ and the optimum LiOH amount （Swt%） required to achieve maximum yield were determined by powder X-ray diffraction （XRD） analysis. Scanning electron microscopy （SEM） micrographs clearly indicated the transformation of grain structures from rods （700℃） to cauliflower shapes （1100℃）.
文摘Aluminum nitride （AlN）/borosilicate glass composites were prepared by the tape casting process and hot-press sintered at 950 ℃ with AIN and SiO2-B203-ZnO-Al2O3-Li2O glass as starting materials. We characterized and analyzed the variation of the microstructure, bulk density, porosity, dielectric constant, thermal conductivity and thermal expansion coefficient （TEC） of the ceramic samples as a function of AIN content. Results show that AIN and SiO2-B2O3-ZnO-Al2O3-Li2O glass can be sintered at 950 ℃, and ZnAI204 and Zn2SiO4 phase precipitated to form glass-ceramic. The performance of the ceramic samples was determined by the composition and bulk density of the composites. Lower AlN content was found redounding to liquid phase sintering, and higher bulk density of composites can be accordingly obtained. With the increase of porosity, corresponding decreases were located in the dielectric constant, thermal conductivity and TEC of the ceramic samples. When the mass fraction of AlN was 40%, the ceramic samples possessed a low dielectric constant （4.5-5.0）, high thermal conductivity （11.6 W/（m.K）） and a proper TEC （3.0× 10^-6 K^-1 which matched that of silicon）. The excellent performance makes this kind of low temperature co-fired ceramic a promising candidate for application in the micro-electronics packaging industry.
基金This work was financially support by the Japan Society for the Promotion of Science(JSPS)Grant-in-Aid for Scientific Research(KAKENHI)(No.20H00297 and Innovative Areas No.JP16H06439)the Cooperative Research Program of Dynamic Alliance for Open Innovations Bridging Human,Environment and Materials in the“Network Joint Research Center for Materials and Devices”.
文摘Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation.However,leaking hydrogen in high-temperature production processes can cause an explosion,which endangers production workers and surrounding areas.To detect leaks early,we used a sensor material based on a wide bandgap aluminum nitride(AlN)that can withstand a high-temperature environment.Three unique AlN morphologies(rod-like,nest-like,and hexagonal plate-like)were synthesized by a direct nitridation method at 1400℃usingγ-AlOOH as a precursor.The gas-sensing performance shows that a hexagonal plate-like morphology exhibited p-type sensing behavior and showed good repeatability as well as the highest response(S=58.7)toward a 750 ppm leak of H2 gas at high temperature(500°C)compared with the rod-like and nest-like morphologies.Furthermore,the hexagonal plate-like morphology showed fast response and recovery times of 40 and 82 s,respectively.The surface facet of the hexagonal morphology of AlN might be energetically favorable for gas adsorption–desorption for enhanced hydrogen detection.
基金National Natural Science Foundation of China(No.52173059)。
文摘Among nitride fibers,aluminum nitride(AlN)fibers have been developed for various advanced applications due to their mechanical flexibility,high thermal conductivity,and excellent electrical insulation and chemical stability.This article presents an overview on the recent progress of AlN fibers.The properties of AlN,particularly the thermal conductivity of AlN in polymer matrix composites are introduced.Afterward,two major approaches,carbothermal reduction and nitriding polycrystalline alumina fiber,for the preparation of AlN fibers are discussed.The carbothermal reduction includes electrospinning,solution blow spinning,and chemical vapor deposition.Furthermore,some perspectives on the future directions for the preparation and application of fibrous AlN are highlighted.This review is expected to provide readers with valuable guidance on the preparation of AlN fibers and inspire researchers to explore more potential applications.
文摘Aluminum Nitride(ALN)is a high thermal conductivity material which is being used with increasing frequency in packaging applications for high brightness LEDs(HBLED).This paper introduce Aluminum Nitride substrate fabrication process and different ALN metallization approaches.It is clear that the most technically appropriate metallization approach for HBLED packging is DPC.This paper explain why the cost of ALN substrate is so high and give the future of ALN in HBLED applications.
基金Supported by the Special Funds for Major State Basic Research Projects (No.G2000036506)the National Natural Science Foundation of China (No. 60476006)
文摘Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.
文摘Wear behavior and mechanism of plasma nitrided steel oscillating against a heat-treated and an untreated aluminum bronze alloy were investigated using an Optimol SRV tribometer.The influence of heat treatment on the mechanical properties of the alloy was evaluated.Furthermore,the wear debris was also examined to understand the wear mechanisms.The results show that a 220-230μm nitrided layer,which was harder than the substrate,was obtained on the steel surface.The tensile strength and hardness of the alloy are found to be significantly improved by the heat treatment associated with low impact toughness.The heat treatment of the alloy did not obviously decrease the friction coefficient of the nitrided steel-bronze couple.However,the wear loss of the nitrided steel increased when it mated with the treated bronze by a severe three-body abrasion.The nitrided steel was mainly damaged by fatigue spalling.Under plane contact conditions,the wear debris was mainly generated from the bronze part and can escape from the interface before being oxidized,leading to the phase structure of all the debris being copper rather than copper oxides.
文摘Thermal stabilities of diethylaluminum azide were studied by means of theoretical analysis and expriments.The results have shown that diethylaluminum and azid be heated to vigorous refluxing under vacuum(400 Pa) at temperature as high as 420℃ without incident of explosion and decomposes smoothly during 460 ～580℃ to form nanometric particles of aluminum nitride in the aerosol synthesis reactor. A new way of preparing nanometric parties of aluminum nitrideis found.
基金This work was supported by Science and Technology Innovation Fund of Middle-Minor Enterprises from Ministy of Science and Technology.
文摘Ultra-fine aluminum nitride has been synthesized by the evaporation of aluminum powder at atmospheric-pressure nitrogen plasma in a hot-wall reactor. The average size of aluminum nitride particle is 0.11 μm measured by scanning electric mirror (SEM), and the purity is at least over 90% evaluated by X-Ray diffraction (XRD). The conversion of Al powder to aluminum nitride is strongly depended on the injection of NH3. Typical experimental parameters such as the feed rate of raw material, the flow rate of ammonia and the position of injecting aluminum powder into the reactor are given.
文摘Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum nitride ceramic(DF/AlN) composite has reached 2.04 W/cm·K, 73%greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy(SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses of diamond films were also studied. The unusual stability and very good adhesion of diamond films on AlN ceramic substrates obtained are attributed to the formation of aluminum carbide.
基金ACKNOWLEDGMENTS This work was supported by the National Natural Science Foundation of China （No.10674138 and No.20571022）. The authors express their appreciations to Professor Q. F. Fang, Dr. X. P. Wang, and Mr. Z. J. Cheng for the technical support and helpful discussions in the dielectric measurements.
文摘Aluminum nitride （AlN） nanobelts were successfully synthesized in high yield through a chloride assisted vapor-solid process. X-ray diffraction, transmission electron microscopy, and selected area electronic diffraction demonstrate that the as-prepared nanobelts are pure, structurally uniform and single crystalline, and can be indexed to hexagonal wurtzite structure. The micro observations show that there exist no defects in the obtained nanobelts. The growth direction of the nanobelts is along [0001]. The frequency spectra of the relative dielectric constant and of the dielectric loss were measured in the frequency range of 50 Hz to 5 MHz. Analysis of these spectra indicates that the interface in samples has great influence on the dielectric behavior of samples. As compared with AlN micropowders, AlN nanobelts have much higher relative dielectric constant, especially at low frequencies at room temperature.
文摘An aerosol process for making aluminum nitride nano-powder by decompositionof single compound diethylalumimm az-ide was described. X-ray diffraction (XRD) and transmissionelectron microscopy (TEM) were used to study characters of the A1N powder. It is shown that theprocess can produce spherical A1N powder with mean particle diameters ranging from 10 to 50 nm at500-800°C. The generated amorphous A1N powder is characterized by a BET (Brunauer-Emmett-Teller)surface area of 103 m2/g and is very reactive to moisture.
基金supported by the National Natural Science Foundation of China(No.51378368)the Foundation of State Key Laboratory of Pollution Control and Resource Reuse(Tongji University),China(No.PCRRT16003)Shenzhen Science and Technology Research Fund(No.CXZZ20150330151321966)
文摘The study aims to identify the potential acute effects of suspended aluminum nitride（Al N）nanoparticles（NPs） on soluble microbial products（SMP） of activated sludge.Cultured activated sludge loaded with 1,10,50,100,150 and 200 mg/L of Al N NPs were carried out in this study.As results showed,Al N NPs had a highly inverse proportionality to bacterial dehydrogenase and OUR,indicating its direct toxicity to the activated sludge viability.The toxicity of Al N NPs was mainly due to the nano-scale of Al N NPs.In SMP,Al N NPs led to the decrease of polysaccharide and humic compounds,but had slight effects on protein.The decrease of tryptophan-like substances in SMP indicated the inhibition of Al N NPs on the bacterial metabolism.Additionally,Al N NPs reduced obviously the molecular weight of SMP,which might be due to the nano-scale of Al N.
文摘AlN powders were synthesized by carbothermal reduction method from aluminum nitrate and glucose. The effect of urea on the preparation and nitridation of the precursors was studied. It is found that urea can affect the morphology and composition of the precursor as well as the nitridation process. During the nitridation process of the precursor prepared without urea, α-Al 2O 3 and AlON are detected and a high temperature(1 600 ℃) is needed for a complete conversion. While for the precursor prepared with urea, a complete conversion is got at a relatively low temperature(1 400 ℃) and AlN is synthesized directly from γ-Al 2O 3, with no sign of the formation of α-Al 2O 3 and AlON. AlN powders synthesized from the precursor prepared without urea agglomerate badly, while the powders synthesized from the precursor prepared with urea are soft aggregates of fine particle, which can be easily dispersed.
文摘Nitriding of surface of aluminum alloys was carried out with using an electron-beam-excited-plasma (EBEP) technique. The EBEP is sustained by electron impact ionization with energetic electron beam. Two kinds of substrates, aluminum alloys AA5052 and AA5083, were exposed to the down flow of EBEP source at 843 K for 45min. The specimens were characterized with respect to following properties: crystallographic structure (XRD), morphology (SEM) and the cross sectional microstructures of the nitrided layer was observed using a scanning electron microscopy (SEM). There are some A12O3 particles on the surface of the nitrided AA5052 and AA5083. The A1N layers were formed on the substrates with the thickness of 4.5 fi m for AA5052 and 0.5 /z m for AA5083 . A relatively uniform nitrided surface layer composed of A1N can be observed on the AA5052 substrate. The grains size near the interfaces between the substrate and A1N layer were smaller than that near the surface. On the surface of A1N layer, the concentration of nitrogen was high and in the middle of A1N layer it had a constant concentration like the aluminum and the concentration was decreased with approaching to the interface. On the surface of nitrided AA5083, a uniform A1N layer was not formed as the reason for the high nitriding temperature.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60976068 and 60936005)Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(Grant No.708083)Fundamental Research Funds for the Central Universities(Grant No.200807010010)
文摘This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （SOAN） substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.
基金Project(50401022) supported by the National Natural Science Foundation of ChinaProject(0650034) supported by the Natural Science Foundation of Jiangxi Province, China
文摘Cr-Al-N ternary coatings were deposited by arc ion plating method using isolated Cr target and Al target. The influence of AlN content on the phase change was studied by synthesizing Cr1-xAlxN coatings with different x values. The effects of substrate negative bias on the surface morphology,deposition rate and phase structure were investigated. As the aluminum content increases,the structure of(Cr1-xAlx)N changes from B1(NaCl) phase to B4(wurtzite) phase. The critical content of AlN solubilized in B1(NaCl) lattice is close to 0.7. With the increasing pulse negative bias,the deposition rate decreases constantly,the droplet contamination is more serious,the ion-etching effect on coating surface is more obvious,and the change of preferred orientation and the shift of XRD peak take place.
文摘Interest in energy harvesters has grown rapidly over the last decade. The cantilever shaped piezoelectric energy harvesting beam is one of the most employed designs, due to its simplicity and flexibility for further performance enhancement. The research effort in the MEMS Piezoelectric vibration energy harvester designed using three types of cantilever materials, Lithium Niobate (LiNbO3), Aluminum Nitride (AlN) and Zinc Oxide (ZnO) with different substrate materials: aluminum, steel and silicon using COMSOL Multiphysics package were designed and analyzed. Voltage, mechanical power and electrical power versus frequency for different cantilever materials and substrates were modeled and simulated using Finite element method (FEM). The resonant frequencies of the LiNbO3/Al, AlN/Al and ZnO/Al systems were found to be 187.5 Hz, 279.5 Hz and 173.5 Hz, respectively. We found that ZnO/Al system yields optimum voltage and electrical power values of 8.2 V and 2.8 mW, respectively. For ZnO cantilever on aluminum, steel and silicon substrates, we found the resonant frequencies to be 173.5 Hz, 170 Hz and 175 Hz, respectively. Interestingly, ZnO/steel yields optimal voltage and electrical power values of 9.83 V and 4.02 mW, respectively. Furthermore, all systems were studied at different differentiate frequencies. We found that voltage and electrical power have increased as the acceleration has increased.
