Bi^(3+)-activated luminescent materials have attracted increasing attention owing to their strong excitation in the near-ultraviolet(NUV)range instead of the visible range.Such a unique feature allows them to avoid re...Bi^(3+)-activated luminescent materials have attracted increasing attention owing to their strong excitation in the near-ultraviolet(NUV)range instead of the visible range.Such a unique feature allows them to avoid reabsorption among phosphors,resulting in their growing popularity in research and applications.However,the majority of Bi^(3+)-doped phosphors suffer from low quantum efficiency,imposing limitations on their practical applications.We hereby present a newly developed phosphor,Ba_(3)SbAl_(3)Ge_(2)O_(14):Bi^(3+)(BSAG:Bi^(3+)),which emits a vibrant yellow light when excited by NUV light.Importantly,this phosphor exhibits a high internal quantum efficiency(IQE)of 95.3%,marking a significant advancement in the field.Through charge compensation,BSAG:Bi^(3+),K+phosphor achieves a remarkable IQE of 97.2%.The photoluminescence(PL)spectroscopy analysis reveals that this phosphor contains only one Bi^(3+)luminescent center,which is consistent with the trigonal structure of BSAG.This is supported by the fact that only one Ba site in the structure can accept Bi^(3+)ions.The critical distance was estimated to be 9.71Å.The energy transfer mechanism between Bi^(3+)ions was determined as a dipole-dipole interaction.To explore the application of BSAG:Bi^(3+)phosphor,pc-WLED devices were fabricated by depositing a blend of this phosphor and one or two commercial phosphors on a 365 nm chip.The final warm pc-WLED device exhibits ideal photoelectric performance with a low CCT of 4229 K and a high Ra of 91.5.展开更多
基金supported by the Hunan Provincial Natural Science Foundation(Grant No.2020JJ5983)the Scientific Research Fund of Hunan Provincial Education Department(Grant No.23C0106).
文摘Bi^(3+)-activated luminescent materials have attracted increasing attention owing to their strong excitation in the near-ultraviolet(NUV)range instead of the visible range.Such a unique feature allows them to avoid reabsorption among phosphors,resulting in their growing popularity in research and applications.However,the majority of Bi^(3+)-doped phosphors suffer from low quantum efficiency,imposing limitations on their practical applications.We hereby present a newly developed phosphor,Ba_(3)SbAl_(3)Ge_(2)O_(14):Bi^(3+)(BSAG:Bi^(3+)),which emits a vibrant yellow light when excited by NUV light.Importantly,this phosphor exhibits a high internal quantum efficiency(IQE)of 95.3%,marking a significant advancement in the field.Through charge compensation,BSAG:Bi^(3+),K+phosphor achieves a remarkable IQE of 97.2%.The photoluminescence(PL)spectroscopy analysis reveals that this phosphor contains only one Bi^(3+)luminescent center,which is consistent with the trigonal structure of BSAG.This is supported by the fact that only one Ba site in the structure can accept Bi^(3+)ions.The critical distance was estimated to be 9.71Å.The energy transfer mechanism between Bi^(3+)ions was determined as a dipole-dipole interaction.To explore the application of BSAG:Bi^(3+)phosphor,pc-WLED devices were fabricated by depositing a blend of this phosphor and one or two commercial phosphors on a 365 nm chip.The final warm pc-WLED device exhibits ideal photoelectric performance with a low CCT of 4229 K and a high Ra of 91.5.
