Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the ...Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 GHz.The effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage,efficiency,noise measure and power output has been presented here.展开更多
文摘Ionization rate coefficients and saturation drift velocities for electrons and holes are the vital material parameters in determining the performance of an IMPATT diode.We have performed a sensitivity analysis of the millimeter wave characteristics of 4H-SiC and 6H-SiC IMPATT diodes with reference to the above mentioned material data and an operating frequency of 220 GHz.The effect of a small variation in the ionization rate and drift velocity on the device characteristics like break down voltage,efficiency,noise measure and power output has been presented here.
