We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as saturable ...We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as saturable absorber (SA). These materials are fabricated via a simple drop-casting method. By employing WS<sub>2</sub>, we obtain a stable harmonic mode-locking at the threshold pump power of 184 mW, and the generated soliton pulse has 3.48 MHz of repetition rate. At the maximum pump power of 250 mW, we also obtain a small value of pulse duration, 2.43 ps with signal-to-noise ratio (SNR) of 57 dB. For MoS<sub>2</sub> SA, the pulse is generated at 105 mW pump power with repetition rate of 1.16 MHz. However, the pulse duration cannot be detected by the autocorrelator device as the pulse duration recorded is 468 ns, with the SNR value of 35 dB.展开更多
As a representative transition metal dichalcogenides(TMD),NiTe_(2)has an ultra-fast optical response,high carrier mobility,and excellent environmental stability.It has a broad application prospect in the fields of ene...As a representative transition metal dichalcogenides(TMD),NiTe_(2)has an ultra-fast optical response,high carrier mobility,and excellent environmental stability.It has a broad application prospect in the fields of ener-gy,biomedicine,optoelectronic devices,and so on.At present,there have been scant reports on the application of NiTe_(2)in the field of ultrafast photonics.In this work,NiTe_(2)was synthesized by chemical vapor deposition(CVD)and integrated with a tapered optical fiber to achieve mode-locking in an erbium-doped fiber laser(EDFL)and a thu-lium-doped fiber laser(TDFL).The mode-locked EDFL exhibited a pulse width of 678 fs and an output power of 3.92 mW.The pulse width of mode-locked TDFL was estimated to have a pulse width of 694 fs with an output power of 21.64 mW.These results demonstrate that NiTe_(2)is an effective saturable absorber material with potential applica-tions in the field of ultrafast optics.展开更多
MXenes,drawn from MAX phases,are special two-dimensional substances with numerous advantages in nonlinear optics,specifically in giant and ultrashort pulsed-laser applications.Ti_(3)C_(2)T_(x)and Ti_(2)CT_(x)nanosheet...MXenes,drawn from MAX phases,are special two-dimensional substances with numerous advantages in nonlinear optics,specifically in giant and ultrashort pulsed-laser applications.Ti_(3)C_(2)T_(x)and Ti_(2)CT_(x)nanosheets however rapidly deteriorate under ambient conditions,limiting their applications.This paper demonstrates how excellent modulation depth of one of the MAX phase compounds vanadium zinc carbide(V_2ZnC)makes it a brilliant saturable absorber(SA)in passively Q-switched all-fiber pulsed lasers,integrated such that a 16.73-μm V_(2)ZnC-polyvinyl alcohol(PVA)thin film acts as SA in the laser.Saturable and non-saturable absorptions were found to be 13.2%and 10.47%,while saturation optical intensity and modulation depth were 6.25 k W/cm^(2)and 12.43%,respectively,illustrating the optical nonlinearity.The superiority of MAX-PVA,fabricated in four distinct ratios,was demonstrated by the fact that it self-starts a giant pulsed laser at pump power as low as 22.5 mW and firmly accomplished 120.6 kHz repetition rate with a pulse width of 2.08μs.It is a fine SA for the use of pulsed-laser production using all-fiber laser due to fabrication simplicity and great optical,thermophysical,and mechanical qualities.展开更多
In this paper,we consider the initial boundary value problem for the 2-D hyperbolic viscous Cahn-Hilliard equation.Firstly,we prove the existence and uniqueness of the local solution by the Galerkin method and contrac...In this paper,we consider the initial boundary value problem for the 2-D hyperbolic viscous Cahn-Hilliard equation.Firstly,we prove the existence and uniqueness of the local solution by the Galerkin method and contraction mapping principle.Then,using the potential well theory,we study the global well-posedness of the solution with initial data at different levels of initial energy,i.e.,subcritical initial energy,critical initial energy and arbitrary positive initial energy.For subcritical initial energy,we prove the global existence,asymptotic behavior and finite time blowup of the solution.Moreover,we extend these results to the critical initial energy using the scaling technique.For arbitrary positive initial energy,including the sup-critical initial energy,we obtain the sufficient conditions for finite time blow-up of the solution.As a further study for estimating the blowup time,we give a unified expression of the lower bound of blowup time for all three initial energy levels and estimate the upper bound of blowup time for subcritical and critical initial energy.展开更多
High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate...High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.展开更多
<span style="font-family:Verdana;">T</span><span style="font-family:Verdana;font-size:12px;">he T</span><span style="font-family:Verdana;font-size:12px;">i&l...<span style="font-family:Verdana;">T</span><span style="font-family:Verdana;font-size:12px;">he T</span><span style="font-family:Verdana;font-size:12px;">i</span><span style="font-family:Verdana;font-size:12px;">Se</span><sub><span style="font-family:Verdana;font-size:12px;">2</span></sub><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">nanosheets</span><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">were</span><span style="font-family:Verdana;font-size:12px;"> prepared by means of ultrasound-assisted liquid </span><span style="font-family:Verdana;font-size:12px;">phase exfoliation (LPE)</span><span style="font-family:Verdana;font-size:12px;"> and the </span><span style="font-family:Verdana;font-size:12px;">nonlinear </span><span style="font-family:Verdana;font-size:12px;">saturable absorption</span><span style="font-family:Verdana;font-size:12px;"> properties</span><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">were experimentally</span><span style="font-family:Verdana;font-size:12px;"> investigated. The modulation depth, saturation intensity and nonsaturable absorbance</span><span style="font-family:Verdana;font-size:12px;"> of the prepared </span><span style="font-family:Verdana;font-size:12px;">1T-TiSe</span><sub><span style="font-family:Verdana;font-size:12px;">2</span></sub><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">SA </span><span style="font-family:Verdana;font-size:12px;">were</span><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">1</span><span style="font-family:Verdana;font-size:12px;">5.7</span><span style="font-family:Verdana;font-size:12px;">%,</span><span style="font-family:Verdana;font-size:12px;"> 1.28 M</span><span style="font-family:Verdana;font-size:12px;">W/cm</span><sup><span style="font-family:Verdana;font-size:12px;vertical-align:super;">2</span></sup><span style="font-family:Verdana;font-size:12px;"> and 8.</span><span style="font-family:Verdana;font-size:12px;">2</span><span style="font-family:Verdana;font-size:12px;">%, </span><span style="font-family:Verdana;font-size:12px;">respectively</span><span style="font-family:Verdana;font-size:12px;">. Taking advantage of the saturable absorption properties of </span><span style="font-family:Verdana;font-size:12px;">T</span><span style="font-family:Verdana;font-size:12px;">i</span><span style="font-family:Verdana;font-size:12px;">Se</span><sub><span style="font-family:Verdana;font-size:12px;">2</span></sub><span style="font-family:Verdana;font-size:12px;">-based SA, a passively Q-switched erbium-doped fiber (EDF) laser was</span><span style="font-family:Verdana;font-size:12px;"> systematically demonstrated</span><span style="font-family:Verdana;font-size:12px;">. The pulse repetition rates varied from 24.50 kHz up to 73.79 kHz with the increasing pump power. The obtained shortest pulse width was 1.31 </span><span style="font-family:Verdana;font-size:12px;">μ</span><span style="font-family:Verdana;font-size:12px;">s with pulse energy of 79.28 nJ. The </span><span style="font-family:Verdana;font-size:12px;">system presented merits of low-cost SA preparation, system compactness,</span><span style="font-family:Verdana;font-size:12px;"> superb stability and high competition.</span>展开更多
基金Supported by the University of Malaya under Grant No PG173-2015B
文摘We demonstrate an ultrafast fiber laser based on transition metal dichalcogenide materials which are tungsten disulfide (WS<sub>2</sub>) and molybdenum disulfide (MoS<sub>2</sub>) as saturable absorber (SA). These materials are fabricated via a simple drop-casting method. By employing WS<sub>2</sub>, we obtain a stable harmonic mode-locking at the threshold pump power of 184 mW, and the generated soliton pulse has 3.48 MHz of repetition rate. At the maximum pump power of 250 mW, we also obtain a small value of pulse duration, 2.43 ps with signal-to-noise ratio (SNR) of 57 dB. For MoS<sub>2</sub> SA, the pulse is generated at 105 mW pump power with repetition rate of 1.16 MHz. However, the pulse duration cannot be detected by the autocorrelator device as the pulse duration recorded is 468 ns, with the SNR value of 35 dB.
基金Supported by Guangdong Basic and Applied Basic Research Fund,China(2024A1515012429)。
文摘As a representative transition metal dichalcogenides(TMD),NiTe_(2)has an ultra-fast optical response,high carrier mobility,and excellent environmental stability.It has a broad application prospect in the fields of ener-gy,biomedicine,optoelectronic devices,and so on.At present,there have been scant reports on the application of NiTe_(2)in the field of ultrafast photonics.In this work,NiTe_(2)was synthesized by chemical vapor deposition(CVD)and integrated with a tapered optical fiber to achieve mode-locking in an erbium-doped fiber laser(EDFL)and a thu-lium-doped fiber laser(TDFL).The mode-locked EDFL exhibited a pulse width of 678 fs and an output power of 3.92 mW.The pulse width of mode-locked TDFL was estimated to have a pulse width of 694 fs with an output power of 21.64 mW.These results demonstrate that NiTe_(2)is an effective saturable absorber material with potential applica-tions in the field of ultrafast optics.
基金supported by the Ministry of Higher under Fundamental Research Grant Scheme(No.FRGS/1/2020/TK0/UTM/02/46)Nippon Sheet Glass Grant(No.R.K130000.7343.4B818)。
文摘MXenes,drawn from MAX phases,are special two-dimensional substances with numerous advantages in nonlinear optics,specifically in giant and ultrashort pulsed-laser applications.Ti_(3)C_(2)T_(x)and Ti_(2)CT_(x)nanosheets however rapidly deteriorate under ambient conditions,limiting their applications.This paper demonstrates how excellent modulation depth of one of the MAX phase compounds vanadium zinc carbide(V_2ZnC)makes it a brilliant saturable absorber(SA)in passively Q-switched all-fiber pulsed lasers,integrated such that a 16.73-μm V_(2)ZnC-polyvinyl alcohol(PVA)thin film acts as SA in the laser.Saturable and non-saturable absorptions were found to be 13.2%and 10.47%,while saturation optical intensity and modulation depth were 6.25 k W/cm^(2)and 12.43%,respectively,illustrating the optical nonlinearity.The superiority of MAX-PVA,fabricated in four distinct ratios,was demonstrated by the fact that it self-starts a giant pulsed laser at pump power as low as 22.5 mW and firmly accomplished 120.6 kHz repetition rate with a pulse width of 2.08μs.It is a fine SA for the use of pulsed-laser production using all-fiber laser due to fabrication simplicity and great optical,thermophysical,and mechanical qualities.
基金supported by the NSFC(12271122)the Fundamental Research Funds for the Central Universities.Han’s research was supported by the Fundamental Research Funds for the Central Universities(3072023GIP2401).
文摘In this paper,we consider the initial boundary value problem for the 2-D hyperbolic viscous Cahn-Hilliard equation.Firstly,we prove the existence and uniqueness of the local solution by the Galerkin method and contraction mapping principle.Then,using the potential well theory,we study the global well-posedness of the solution with initial data at different levels of initial energy,i.e.,subcritical initial energy,critical initial energy and arbitrary positive initial energy.For subcritical initial energy,we prove the global existence,asymptotic behavior and finite time blowup of the solution.Moreover,we extend these results to the critical initial energy using the scaling technique.For arbitrary positive initial energy,including the sup-critical initial energy,we obtain the sufficient conditions for finite time blow-up of the solution.As a further study for estimating the blowup time,we give a unified expression of the lower bound of blowup time for all three initial energy levels and estimate the upper bound of blowup time for subcritical and critical initial energy.
基金Project supported by the Key Area Research and Development Program of Guangdong Province of China(Grant No.2021B0101300005)the National Key Research and Development Program of China(Grant No.2021YFB3401603)。
文摘High-k materials as an alternative dielectric layer for SiC power devices have the potential to reduce interfacial state defects and improve MOS channel conduction capability.Besides,under identical conditions of gate oxide thickness and gate voltage,the high-k dielectric enables a greater charge accumulation in the channel region,resulting in a larger number of free electrons available for conduction.However,the lower energy band gap of high-k materials leads to significant leakage currents at the interface with Si C,which greatly affects device reliability.By inserting a layer of SiO_(2)between the high-k material and Si C,the interfacial barrier can be effectively widened and hence the leakage current will be reduced.In this study,the optimal thickness of the intercalated SiO_(2)was determined by investigating and analyzing the gate dielectric breakdown voltage and interfacial defects of a dielectric stack composed of atomic-layer-deposited Al_(2)O_(3)layer and thermally nitride SiO_(2).Current-voltage and high-frequency capacitance-voltage measurements were performed on metal-oxide-semiconductor test structures with 35 nm thick Al_(2)O_(3)stacked on 1 nm,2 nm,3 nm,6 nm,or 9 nm thick nitride SiO_(2).Measurement results indicated that the current conducted through the oxides was affected by the thickness of the nitride oxide and the applied electric field.Finally,a saturation thickness of stacked SiO_(2)that contributed to dielectric breakdown and interfacial band offsets was identified.The findings in this paper provide a guideline for the SiC gate dielectric stack design with the breakdown strength and the interfacial state defects considered.
文摘<span style="font-family:Verdana;">T</span><span style="font-family:Verdana;font-size:12px;">he T</span><span style="font-family:Verdana;font-size:12px;">i</span><span style="font-family:Verdana;font-size:12px;">Se</span><sub><span style="font-family:Verdana;font-size:12px;">2</span></sub><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">nanosheets</span><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">were</span><span style="font-family:Verdana;font-size:12px;"> prepared by means of ultrasound-assisted liquid </span><span style="font-family:Verdana;font-size:12px;">phase exfoliation (LPE)</span><span style="font-family:Verdana;font-size:12px;"> and the </span><span style="font-family:Verdana;font-size:12px;">nonlinear </span><span style="font-family:Verdana;font-size:12px;">saturable absorption</span><span style="font-family:Verdana;font-size:12px;"> properties</span><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">were experimentally</span><span style="font-family:Verdana;font-size:12px;"> investigated. The modulation depth, saturation intensity and nonsaturable absorbance</span><span style="font-family:Verdana;font-size:12px;"> of the prepared </span><span style="font-family:Verdana;font-size:12px;">1T-TiSe</span><sub><span style="font-family:Verdana;font-size:12px;">2</span></sub><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">SA </span><span style="font-family:Verdana;font-size:12px;">were</span><span style="font-family:Verdana;font-size:12px;"> </span><span style="font-family:Verdana;font-size:12px;">1</span><span style="font-family:Verdana;font-size:12px;">5.7</span><span style="font-family:Verdana;font-size:12px;">%,</span><span style="font-family:Verdana;font-size:12px;"> 1.28 M</span><span style="font-family:Verdana;font-size:12px;">W/cm</span><sup><span style="font-family:Verdana;font-size:12px;vertical-align:super;">2</span></sup><span style="font-family:Verdana;font-size:12px;"> and 8.</span><span style="font-family:Verdana;font-size:12px;">2</span><span style="font-family:Verdana;font-size:12px;">%, </span><span style="font-family:Verdana;font-size:12px;">respectively</span><span style="font-family:Verdana;font-size:12px;">. Taking advantage of the saturable absorption properties of </span><span style="font-family:Verdana;font-size:12px;">T</span><span style="font-family:Verdana;font-size:12px;">i</span><span style="font-family:Verdana;font-size:12px;">Se</span><sub><span style="font-family:Verdana;font-size:12px;">2</span></sub><span style="font-family:Verdana;font-size:12px;">-based SA, a passively Q-switched erbium-doped fiber (EDF) laser was</span><span style="font-family:Verdana;font-size:12px;"> systematically demonstrated</span><span style="font-family:Verdana;font-size:12px;">. The pulse repetition rates varied from 24.50 kHz up to 73.79 kHz with the increasing pump power. The obtained shortest pulse width was 1.31 </span><span style="font-family:Verdana;font-size:12px;">μ</span><span style="font-family:Verdana;font-size:12px;">s with pulse energy of 79.28 nJ. The </span><span style="font-family:Verdana;font-size:12px;">system presented merits of low-cost SA preparation, system compactness,</span><span style="font-family:Verdana;font-size:12px;"> superb stability and high competition.</span>
