Based on the theory of integration within s-ordering of operators and the bipartite entangled state representation we introduce s-parameterized Weyl-Wigner correspondence in the entangled form. Some of its application...Based on the theory of integration within s-ordering of operators and the bipartite entangled state representation we introduce s-parameterized Weyl-Wigner correspondence in the entangled form. Some of its applications in quantum optics theory are presented as well.展开更多
By extending the usual Weyl transformation to the s-parameterized Weyl transformation with s being a real parameter,we obtain the s-parameterized quantization scheme which includes P–Q quantization, Q–P quantization...By extending the usual Weyl transformation to the s-parameterized Weyl transformation with s being a real parameter,we obtain the s-parameterized quantization scheme which includes P–Q quantization, Q–P quantization, and Weyl ordering as its three special cases. Some operator identities can be derived directly by virtue of the s-parameterized quantization scheme.展开更多
This paper presented a method of fabricating radio frequency( RF) transmission lines by embroidering conductive thread on fabric. A digital embroidery machine was selected to fabricate transmission lines. Effects of t...This paper presented a method of fabricating radio frequency( RF) transmission lines by embroidering conductive thread on fabric. A digital embroidery machine was selected to fabricate transmission lines. Effects of the typical process parameters on the S-parameter of these RF transmission lines were tested and discussed. And the results showed that embroidery process parameters such as stitch direction,stitch spacing,stitch length and embroidered tension had significant effects on the RF performance of embroidered transmission lines,of which stitch type was the most important factor for the measured S-parameter of transmission lines.展开更多
In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T D...In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.展开更多
By introducing the s-parameterized generalized Wigner operator into phase-space quantum mechanics we invent the technique of integration within s-ordered product of operators （which considers normally ordered, antino...By introducing the s-parameterized generalized Wigner operator into phase-space quantum mechanics we invent the technique of integration within s-ordered product of operators （which considers normally ordered, antinormally ordered and Weyl ordered product of operators as its special cases）. The s-ordered operator expansion （denoted by s…s ） formula of density operators is derived, which isρ=2/1-s∫d^2β/π〈-β｜ρ｜β〉sexp{2/s-1（s｜β｜^2-β＊α＋βa-αα）}s The s-parameterized quantization scheme is thus completely established.展开更多
We discuss the characterization and modeling of coplanar waveguides （CPW） realized in TSMC 0. 13μm CMOS process. EM-field simulations with momentum are performed to estimate the important parameters of the transmis...We discuss the characterization and modeling of coplanar waveguides （CPW） realized in TSMC 0. 13μm CMOS process. EM-field simulations with momentum are performed to estimate the important parameters of the transmission lines, such as characteristic impedance and propagation loss. Coplanar waveguide libraries are designed with Z values of 30,50,70, and 100Ω. Finally, the propagation constant and the characteristic impedance are measured in a frequency range from 0. 1 to 40GHz with a vector-network analyzer,using the short-open-loadthru （SOLT） de-embedding technique. The distributed parameters of the CPWs are extracted from the measured S-parameters.展开更多
This paper investigates a novel method for deriving 4-port S-parameters for the E-MIMO approach.In this method,only the self-S-matrices of the transmitting antennas(S_(TT))and receiving antennas(S_(RR))need to be pre-...This paper investigates a novel method for deriving 4-port S-parameters for the E-MIMO approach.In this method,only the self-S-matrices of the transmitting antennas(S_(TT))and receiving antennas(S_(RR))need to be pre-calculated or measured.The coupling matrix(S_(RT)orS_(TR)),which depends on the position of the receiving element,can be estimated using the proposed simplified method.Since the receiving antenna is positioned in the far-field,the Friis transmission formula is applied to estimate the amplitude of the elements in the coupling matrix(S_(RT)orS_(TR)),while the array factor is used to estimate the phase of these elements.The S-matrices for a 3×1 array,obtained through conventional simulation,measurement,and the proposed estimation method,are compared.Furthermore,these matrices are applied to E-MIMO to compare their radiation patterns and power transmission efficiencies.The results demonstrate that the proposed estimation method achieves radiation patterns and power transmission efficiencies that are closely comparable to those obtained using the conventional method,confirming the effectiveness of the proposed method.展开更多
In high speed three-dimensional integrated circuits （3D ICs）, through silicon via （TSV） insertion causes impedance discontinuities along the interconnect-TSV channel that results in signal reflection. As demonstra...In high speed three-dimensional integrated circuits （3D ICs）, through silicon via （TSV） insertion causes impedance discontinuities along the interconnect-TSV channel that results in signal reflection. As demonstrated for a two-plane interconnect structure connected by a TSV, we incorporate an appropriate capacitance at the junction to mitigate the signal reflection with gigascale frequencies. Based on 65 nm technology and S-parameter analysis, the decrease of signal reflection can be 189% at the tuned frequency of 5 GHz. Extending this method to the five-plane interconnect structure further, the reduction of signal reflection can achieve 400%. So we could broaden this method to any multilevel 3D interconnect structures. This method can also be applied to a circuit with tunable operating frequencies by digitally connecting the corresponding matching capacitance into the circuit through switches. There are remarkable improvements of the quality of the transmitting signals.展开更多
An interposer test vehicle with TSVs（through-silicon vias） and two redistribute layers（RDLs） on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of cop...An interposer test vehicle with TSVs（through-silicon vias） and two redistribute layers（RDLs） on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide（CPW） and micro strip line（MSL） structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer（VNA）. The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed,and the results were also presented and discussed in this paper.展开更多
This paper proposes a simple method of measuring differentially-excited on-wafer RF CMOS spiral inductor-like components.This method requires only two common ‘G-S-G＇ probes and an ordinary two-port VNA.Using a netwo...This paper proposes a simple method of measuring differentially-excited on-wafer RF CMOS spiral inductor-like components.This method requires only two common ‘G-S-G＇ probes and an ordinary two-port VNA.Using a network instead of a detailed equivalent circuit, this method completes the de-embedding with only one ‘Through＇ dummy, and thus the measurements are greatly simplified.By designing the ports ‘Open＇ or ‘Shortcircuited＇ deliberately, a multi-port transformer can be transformed into three two-port networks with different terminators.Then, couplings between the two coils can be solved, and the differentially-excited scattering parameters（S-parameters） can be constructed.Also, a group of differential inductors and transformers were designed and measured, and then comparisons between simulated and measured electromagnetic results are performed to verify this method.展开更多
RF cold test of a novel C-band cavity beam position monitor （PBM） to be used in the SDUVFEL Test Facility is described. The test results are presented and some characteristics discussed. The main parameters obtained...RF cold test of a novel C-band cavity beam position monitor （PBM） to be used in the SDUVFEL Test Facility is described. The test results are presented and some characteristics discussed. The main parameters obtained are in reasonable agreement with the analytical estimations. Effective suppression of the common mode has been demonstrated. The position sensitivity over the test region of μ0.5 mm is about -21.58 dB/10 μm for the TM110 mode and is linear in the central region of the BPM cavity.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.10775097 and 10874174)the President Foundation of the Chinese Academy of Sciences
文摘Based on the theory of integration within s-ordering of operators and the bipartite entangled state representation we introduce s-parameterized Weyl-Wigner correspondence in the entangled form. Some of its applications in quantum optics theory are presented as well.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11147009,11347026,and 11244005)the Natural Science Foundation of Shandong Province,China(Grant Nos.ZR2013AM012 and ZR2012AM004)the Natural Science Foundation of Liaocheng University,China
文摘By extending the usual Weyl transformation to the s-parameterized Weyl transformation with s being a real parameter,we obtain the s-parameterized quantization scheme which includes P–Q quantization, Q–P quantization, and Weyl ordering as its three special cases. Some operator identities can be derived directly by virtue of the s-parameterized quantization scheme.
基金National Natural Science Foundation of China(No.51405079)the Fundamental Research Funds for the Central Universities,China
文摘This paper presented a method of fabricating radio frequency( RF) transmission lines by embroidering conductive thread on fabric. A digital embroidery machine was selected to fabricate transmission lines. Effects of the typical process parameters on the S-parameter of these RF transmission lines were tested and discussed. And the results showed that embroidery process parameters such as stitch direction,stitch spacing,stitch length and embroidered tension had significant effects on the RF performance of embroidered transmission lines,of which stitch type was the most important factor for the measured S-parameter of transmission lines.
文摘In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10775097 and 10874174)
文摘By introducing the s-parameterized generalized Wigner operator into phase-space quantum mechanics we invent the technique of integration within s-ordered product of operators （which considers normally ordered, antinormally ordered and Weyl ordered product of operators as its special cases）. The s-ordered operator expansion （denoted by s…s ） formula of density operators is derived, which isρ=2/1-s∫d^2β/π〈-β｜ρ｜β〉sexp{2/s-1（s｜β｜^2-β＊α＋βa-αα）}s The s-parameterized quantization scheme is thus completely established.
文摘We discuss the characterization and modeling of coplanar waveguides （CPW） realized in TSMC 0. 13μm CMOS process. EM-field simulations with momentum are performed to estimate the important parameters of the transmission lines, such as characteristic impedance and propagation loss. Coplanar waveguide libraries are designed with Z values of 30,50,70, and 100Ω. Finally, the propagation constant and the characteristic impedance are measured in a frequency range from 0. 1 to 40GHz with a vector-network analyzer,using the short-open-loadthru （SOLT） de-embedding technique. The distributed parameters of the CPWs are extracted from the measured S-parameters.
文摘This paper investigates a novel method for deriving 4-port S-parameters for the E-MIMO approach.In this method,only the self-S-matrices of the transmitting antennas(S_(TT))and receiving antennas(S_(RR))need to be pre-calculated or measured.The coupling matrix(S_(RT)orS_(TR)),which depends on the position of the receiving element,can be estimated using the proposed simplified method.Since the receiving antenna is positioned in the far-field,the Friis transmission formula is applied to estimate the amplitude of the elements in the coupling matrix(S_(RT)orS_(TR)),while the array factor is used to estimate the phase of these elements.The S-matrices for a 3×1 array,obtained through conventional simulation,measurement,and the proposed estimation method,are compared.Furthermore,these matrices are applied to E-MIMO to compare their radiation patterns and power transmission efficiencies.The results demonstrate that the proposed estimation method achieves radiation patterns and power transmission efficiencies that are closely comparable to those obtained using the conventional method,confirming the effectiveness of the proposed method.
基金supported by the National Natural Science Foundation of China(No.61204044)
文摘In high speed three-dimensional integrated circuits （3D ICs）, through silicon via （TSV） insertion causes impedance discontinuities along the interconnect-TSV channel that results in signal reflection. As demonstrated for a two-plane interconnect structure connected by a TSV, we incorporate an appropriate capacitance at the junction to mitigate the signal reflection with gigascale frequencies. Based on 65 nm technology and S-parameter analysis, the decrease of signal reflection can be 189% at the tuned frequency of 5 GHz. Extending this method to the five-plane interconnect structure further, the reduction of signal reflection can achieve 400%. So we could broaden this method to any multilevel 3D interconnect structures. This method can also be applied to a circuit with tunable operating frequencies by digitally connecting the corresponding matching capacitance into the circuit through switches. There are remarkable improvements of the quality of the transmitting signals.
基金Project supported by the National S&T Major Projects(No.2011ZX02709)the National Natural Science Foundation of China(No.61176098)support from the 100 Talents Program of The Chinese Academy of Sciences
文摘An interposer test vehicle with TSVs（through-silicon vias） and two redistribute layers（RDLs） on the top side for 2.5D integration was fabricated and high-frequency interconnections were designed in the form of coplanar waveguide（CPW） and micro strip line（MSL） structures. The signal transmission structures were modeled and simulated in a 3D EM tool to estimate the S-parameters. The measurements were carried out using the vector network analyzer（VNA）. The simulated results of the transmission lines on the surface of the interposer without TSVs showed good agreement with the simulated results, while the transmission structures with TSVs showed significant offset between simulation and test results. The parameters of the transmission structures were changed,and the results were also presented and discussed in this paper.
文摘This paper proposes a simple method of measuring differentially-excited on-wafer RF CMOS spiral inductor-like components.This method requires only two common ‘G-S-G＇ probes and an ordinary two-port VNA.Using a network instead of a detailed equivalent circuit, this method completes the de-embedding with only one ‘Through＇ dummy, and thus the measurements are greatly simplified.By designing the ports ‘Open＇ or ‘Shortcircuited＇ deliberately, a multi-port transformer can be transformed into three two-port networks with different terminators.Then, couplings between the two coils can be solved, and the differentially-excited scattering parameters（S-parameters） can be constructed.Also, a group of differential inductors and transformers were designed and measured, and then comparisons between simulated and measured electromagnetic results are performed to verify this method.
基金Development Plan of the State Key Fundamental Research(2002CB713600)
文摘RF cold test of a novel C-band cavity beam position monitor （PBM） to be used in the SDUVFEL Test Facility is described. The test results are presented and some characteristics discussed. The main parameters obtained are in reasonable agreement with the analytical estimations. Effective suppression of the common mode has been demonstrated. The position sensitivity over the test region of μ0.5 mm is about -21.58 dB/10 μm for the TM110 mode and is linear in the central region of the BPM cavity.
