A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mob...A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.展开更多
The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. T...The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current （/ON）, but has little effect on the hole mobility. The/ON is degraded by the surface roughness scattering in both strained and unstrained devices.展开更多
The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the Al...The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.展开更多
We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas（2DEG） at a single heterointerface（triangle-shaped quantum well）.Our results indicate that,like ...We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas（2DEG） at a single heterointerface（triangle-shaped quantum well）.Our results indicate that,like the interface roughness scattering in a square quantum well,the roughness scattering at the Al_xGa_（1-x）As/GaAs heterointerface can be characterized by parameters of roughness height A and lateral A,and in addition by electric field F.A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.展开更多
We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The d...We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.展开更多
Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.T...Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.This algorithm is composed of a three dimensional(3D) ray tracing algorithm based on binary space partitioning(BSP) and a diffuse scattering algorithm based on Oren-Nayar's theory.Lack of accuracy and prohibitive time consumption are the main drawbacks of the existing ray tracing based propagation prediction models.To defy these shortcomings,the balanced BSP tree is used in the proposed algorithm to accelerate the ray tracing,while the nearest object priority technique(NOP) and in contact surface(ICS) is used to eliminate the repeated rayobject intersection tests.Therefore,the final criteria of this study are the time consumption as well as accuracy by predicting the field strength and the number of received signals.Using the proposed approaches,our algorithm becomes faster and more accurate than the existing algorithms.A detailed comparative study with existing algorithms shows that the proposed algorithm has at most 37.83%higher accuracy and 34.44%lower time consumption.Moreover,effects of NOP and ICS techniques and scattering factor on time and ray prediction accuracy are also presented.展开更多
In the composed system of a target and rough surface,the electromagnetic scattering mechanism,especially the multipath scattering,is investigated.Using physical optics double bouncing algorithm,the multipath scatterin...In the composed system of a target and rough surface,the electromagnetic scattering mechanism,especially the multipath scattering,is investigated.Using physical optics double bouncing algorithm,the multipath scattering model of the system has been established.Simulated by a wide-band radar signal and based on fractal rough surface,the artificial echo of the target has been obtained in virtue of the established multipath scattering model.By simulating to image the target in one dimension using the artificial echo,two kinds of range profiles are attained.It is found that one is from the target and the other is from the multipath scattering effect.展开更多
In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanis...In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.展开更多
Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory ...Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory to calculate the electronic conductivity and the giant magnetoresistance in magnetic multilayered cylindrical systems. It is found that in the limit of weakly scattering from impurities surface and interfaces, the total conductivity is given by a sum of conductivities of all the subbands and two spin-channels. For each subband and each spin-channel the scattering rate due to the impurities, surface and interfaces is added up.展开更多
In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes （BdG） equation for a ferromagnetic superconductor （FS）. Taking in...In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes （BdG） equation for a ferromagnetic superconductor （FS）. Taking into account the rough interface scattering effect, we calculate the shot noise and the differential conductance of the normalmetal insulator ferromagnetic superconductor junction. It is shown that the exchange energy Eh in FS can lead to splitting of the differential shot noise peaks and the conductance peaks. The energy difference between the two splitting peaks is equal to 2Eh. The rough interface scattering strength results in descent of conductance peaks and the shot noise-to-current ratio but increases the shot noise.展开更多
Elastic wave scattering by a rough free surface of solids is analyzed. The analysis is based on the concept of scattering amplitude (SA) and perturbation approximation. The SA method is very convenient for rough surfa...Elastic wave scattering by a rough free surface of solids is analyzed. The analysis is based on the concept of scattering amplitude (SA) and perturbation approximation. The SA method is very convenient for rough surface scattering problems. By solving the boundary equations, the first and the second order solutions of approximate scattering amplitude are obtained. The general solutions are used for, as an example, the wave scattering by rough surfaces with Gaussian distribution. The mean field and variance are given. Finally, an experiment is designed to verify the theoretical predications.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 60776016）, the RGC of HKSAR, China （Grant No HKU7142/05E）, and Open Foundation of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing （Grant No WUT2006M02）.
文摘A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 gate stack. Impacts of the two kinds of scatterings on mobility degradation are investigated. Effects of interlayer （SiO2） thickness and permittivities of the high-k dielectric and interlayer on carrier mobility are also discussed. It is shown that a smooth interface between high-k dielectric and interlayer, as well as moderate permittivities of high-k dielectrics, is highly desired to improve carriers mobility while keeping alow equivalent oxide thickness. Simulated results agree reasonably with experimental data.
基金Project supported by the National Key Basic Research Program,China (Grant Nos.2011CBA00604 and 2009ZX02305-003)
文摘The effects of strain and surface roughness scattering on the quasi-ballistic hole transport in a strained gate-all-around germanium nanowire p-channel field-effect transistor （pFET） are investigated in this work. The valence subbands are shifted up and warped more parabolically by the influence of HfO2 due to the lattice mismatch. However, the boundary force only shifts the subbands downwards and has little effect on the reshaping of bands. Strain induced by HfO2 increases both the hole mobility and ON-current （/ON）, but has little effect on the hole mobility. The/ON is degraded by the surface roughness scattering in both strained and unstrained devices.
基金the National Natural Science Foundation of China(Grant Nos.91233111,11275228,60976008,61006004,61076001,and 10979507)the National Basic Research Program of China(Grant No.2012CB619305)the National High Technology Research and Development Program of China(Grant No.2011AA03A101)
文摘The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.
文摘We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas（2DEG） at a single heterointerface（triangle-shaped quantum well）.Our results indicate that,like the interface roughness scattering in a square quantum well,the roughness scattering at the Al_xGa_（1-x）As/GaAs heterointerface can be characterized by parameters of roughness height A and lateral A,and in addition by electric field F.A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976008,61006004,61076001,and10979507)the National Basic Research Program of China (Grant No. A000091109-05)the National High Technology Research and Development Program of China (Grant No. 2011AA03A101)
文摘We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.
基金financial support under the University of Malaya Research Grant(UMRG) scheme(RG098/12ICT)
文摘Since rough surface scattering has a great impact on the accuracy of the propagation prediction algorithm,an integrated algorithm for indoor propagation prediction including rough surface scattering is proposed here.This algorithm is composed of a three dimensional(3D) ray tracing algorithm based on binary space partitioning(BSP) and a diffuse scattering algorithm based on Oren-Nayar's theory.Lack of accuracy and prohibitive time consumption are the main drawbacks of the existing ray tracing based propagation prediction models.To defy these shortcomings,the balanced BSP tree is used in the proposed algorithm to accelerate the ray tracing,while the nearest object priority technique(NOP) and in contact surface(ICS) is used to eliminate the repeated rayobject intersection tests.Therefore,the final criteria of this study are the time consumption as well as accuracy by predicting the field strength and the number of received signals.Using the proposed approaches,our algorithm becomes faster and more accurate than the existing algorithms.A detailed comparative study with existing algorithms shows that the proposed algorithm has at most 37.83%higher accuracy and 34.44%lower time consumption.Moreover,effects of NOP and ICS techniques and scattering factor on time and ray prediction accuracy are also presented.
基金Supported by the Key Laboratory Foundation of NaItional Defense Science and Technology(99JS93.1.2.JW 1204)
文摘In the composed system of a target and rough surface,the electromagnetic scattering mechanism,especially the multipath scattering,is investigated.Using physical optics double bouncing algorithm,the multipath scattering model of the system has been established.Simulated by a wide-band radar signal and based on fractal rough surface,the artificial echo of the target has been obtained in virtue of the established multipath scattering model.By simulating to image the target in one dimension using the artificial echo,two kinds of range profiles are attained.It is found that one is from the target and the other is from the multipath scattering effect.
基金Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604)
文摘In this paper, we investigate the performance of the bulk fin field effect transistor （FinFET） through a three- dimensional （3D） full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.
文摘Taking into account the quantum size effects and considering three types of scattering from bulk impurities,rough surface and rough interfaces, we use quantum-statistical Green's function approach and Kubo theory to calculate the electronic conductivity and the giant magnetoresistance in magnetic multilayered cylindrical systems. It is found that in the limit of weakly scattering from impurities surface and interfaces, the total conductivity is given by a sum of conductivities of all the subbands and two spin-channels. For each subband and each spin-channel the scattering rate due to the impurities, surface and interfaces is added up.
文摘In this paper, the superconducting order parameter and the energy spectrum of the Bogoliubov excitations are obtained from the Bogoliubov-de Gennes （BdG） equation for a ferromagnetic superconductor （FS）. Taking into account the rough interface scattering effect, we calculate the shot noise and the differential conductance of the normalmetal insulator ferromagnetic superconductor junction. It is shown that the exchange energy Eh in FS can lead to splitting of the differential shot noise peaks and the conductance peaks. The energy difference between the two splitting peaks is equal to 2Eh. The rough interface scattering strength results in descent of conductance peaks and the shot noise-to-current ratio but increases the shot noise.
基金This work was supported by the National Natural Science Foundation of China(19774062).
文摘Elastic wave scattering by a rough free surface of solids is analyzed. The analysis is based on the concept of scattering amplitude (SA) and perturbation approximation. The SA method is very convenient for rough surface scattering problems. By solving the boundary equations, the first and the second order solutions of approximate scattering amplitude are obtained. The general solutions are used for, as an example, the wave scattering by rough surfaces with Gaussian distribution. The mean field and variance are given. Finally, an experiment is designed to verify the theoretical predications.
