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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain 被引量:1
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作者 赵胜雷 宓珉瀚 +6 位作者 侯斌 罗俊 王毅 戴杨 张进成 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第10期472-476,共5页
In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in A1GaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving th... In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in A1GaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic- drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications. 展开更多
关键词 A1GaN/GaN high-electron mobility transistors (HEMTs) forward blocking voltage reverse blocking voltage Schottky drain
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
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作者 赵胜雷 王媛 +5 位作者 杨晓蕾 林志宇 王冲 张进成 马晓华 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第9期399-403,共5页
In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN... In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (VRB) and the forward blocking voltage (VFB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. VRB and VFB were improved from -67 V and 134 V to -653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly. 展开更多
关键词 AlGaN/GaN high-electron mobility transistors reverse blocking capability drain field plate Schottky drain
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A Novel Approach to Practical Matrix Converter Motor Drive System With Reverse Blocking IGBT (To continue)
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《变频器世界》 2006年第8期28-29,共2页
a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-pha... a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer) 展开更多
关键词 口口 口门 mode To continue A Novel Approach to Practical Matrix Converter Motor Drive System With reverse blocking IGBT
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A Novel Approach to Practical Matrix Converter Motor Drive System With Reverse Blocking IGBT
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《变频器世界》 2006年第7期25-26,共2页
a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-pha... a Pole voltage waveforms (VA20 and VA40) for modulation index 0.4 (middle trace is A-phase voltage waveform) x-axis: 1 div.=10ms, y-axis: 1 div.= 100V b Normalized harmonic spectrum for pole voltage of Fig. 9a c A-phase current and phase voltage for modulation index 0.4 (reference space vector is in inner layer) 展开更多
关键词 A Novel Approach to Practical Matrix Converter Motor Drive System With reverse blocking IGBT mode PWM
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Control strategy of novel hybrid commutated converter based on reverse blocking integrated gate commutated thyristor for commutation failure mitigation
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作者 Zongze Wang Zhanqing Yu +5 位作者 Lu Qu Zhichang Yuan Kangsheng Cui Jian Shi Biao Zhao Rong Zeng 《High Voltage》 2025年第3期546-554,共9页
Commutation failure(CF)is an inherent problem faced by line commutated converter high voltage direct current(LCC-HVDC)technology.To completely solve the problem of CF,we have proposed a novel hybrid commutated convert... Commutation failure(CF)is an inherent problem faced by line commutated converter high voltage direct current(LCC-HVDC)technology.To completely solve the problem of CF,we have proposed a novel hybrid commutated converter(HCC)technology based on reverse blocking integrated gate commutated thyristor,which can utilise two methods for commutation:enhanced grid voltage commutation and active turn-off forced com-mutation.In this paper,the topology and operating principle of HCC are proposed.Then,the control and protection strategy is designed based on the current variation trend under AC faults.To verify the effectiveness of HCC in mitigating CF,a 120-kV/360-MW HCC-HVDC model is built in PSCAD/EMTDC,adopting LCC at the rectifier side and HCC at the inverter side.Based on this model,HCC steady-state and fault transient stresses are analysed.Various AC faults are simulated and the performance of HCC-HVDC is compared with LCC-HVDC.Finally,the results show that the HCC topol-ogy and proposed control strategy can solve CF under all fault conditions with almost the same attributes as LCC,such as large capacity,low cost,low loss and high reliability,which is meaningful for the application of HCC to the HVDC transmission system. 展开更多
关键词 high voltage direct current reverse blocking integrated gate commutated thyristor reverse blocking integrated gate commutated thyristorwhich line commutated converter hybrid commutated converter hcc technology commutation failure mitigation commutation enhanced grid voltage commutation novel hybrid commutated converter
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Nd:YAG laser peripheral iridotomy for reverse pupillary block:a case report
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作者 Ze-Yu Zhang Zhi-Qiao Liang Yong-Zhen Bao 《International Journal of Ophthalmology(English edition)》 2025年第8期1606-1609,共4页
Dear Editor,In this case,we discuss a teenager who experienced severe eye pain and elevated intraocular pressure(IOP)caused by reverse pupillary block,which was successfully resolved using Neodymium-doped yttrium alum... Dear Editor,In this case,we discuss a teenager who experienced severe eye pain and elevated intraocular pressure(IOP)caused by reverse pupillary block,which was successfully resolved using Neodymium-doped yttrium aluminum garnet(Nd:YAG)laser peripheral iridotomy(LPI). 展开更多
关键词 eye pain reverse pupillary blockwhich intraocular pressure Nd YAG laser peripheral iridotomy peripheral iridotomy lpi reverse pupillary block
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A Novel Ideal Ohmic Contact SiGeC/Si Power Diode with Graded Doping Concentration
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作者 刘静 高勇 +1 位作者 杨媛 王彩琳 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第3期342-348,共7页
A novel structure of ideal ohmic contact p^+ (SiGeC)-n^- -n^+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. U... A novel structure of ideal ohmic contact p^+ (SiGeC)-n^- -n^+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized. Using MEDICI, the physical parameter models applicable for SiGeC/Si heterojunction power diodes are given. The simulation results indicate that the diodes with graded doping concentration in the base region not only have the merit of fast and soft reverse recovery but also double reverse blocking voltage,and their forward conducting voltage has dropped to some extent,compared to the diodes with constant doping concentration in the base region. The new structure achieves a good trade-off in Qs-Vf-Ir ,and its combination of properties is superior to ideal ohmic contact diodes and conventional diodes. 展开更多
关键词 SiGeC/Si heterojunction power diodes reverse blocking voltage ohmic contact
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Reverse-blocking modular multilevel converter for battery energy storage systems 被引量:3
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作者 Xiaofeng YANG Yao XUE +4 位作者 Bowei CHEN Yajie MU Zhiqin LIN Trillion Q.ZHENG Seiki IGARASHI 《Journal of Modern Power Systems and Clean Energy》 SCIE EI 2017年第4期652-662,共11页
Energy storage systems with multilevel converters play an important role in modern electric power systems with large-scale renewable energy integration.This paper proposes a reverse-blocking modular multilevel convert... Energy storage systems with multilevel converters play an important role in modern electric power systems with large-scale renewable energy integration.This paper proposes a reverse-blocking modular multilevel converter for a battery energy storage system(RB-MMCBESS). Besides integrating distributed low-voltage batteries to medium or high voltage grids, with the inherited advantages of traditional MMCs, the RB-MMC-BESS also provides improved DC fault handling capability. This paper analyzes such a new converter configuration and its operating principles. Control algorithms are developed for AC side power control and the balancing of battery state of charge. The blocking mechanism to manage a DC pole-topole fault analyzed in depth. Comprehensive simulation results validate both the feasibility of the RB-MMC-BESS topology and the effectiveness of the control and fault handling strategies. 展开更多
关键词 reverse blocking Modular multilevel converter Battery energy storage system SOC control Fault blocking
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Structural Style and Reservoir Forming Characteristics of Dawangzhuang Buried Hill
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作者 SUI Mingyang 《外文科技期刊数据库(文摘版)工程技术》 2021年第12期1180-1186,共11页
Buried hill is an important exploration field in Dawangzhuang block. Because Dawangzhuang buried hill has experienced multi-stage tectonic movement, the complexity of tectonic movement determines the diversity of buri... Buried hill is an important exploration field in Dawangzhuang block. Because Dawangzhuang buried hill has experienced multi-stage tectonic movement, the complexity of tectonic movement determines the diversity of buried hill morphology, and the diversity of buried hill structural morphology determines its reservoir forming characteristics. Therefore, the research on the structural style and reservoir forming characteristics of Dawangzhuang buried hill is of great significance in the process of oil and gas exploration at this stage. This paper summarizes the structural style of Dawangzhuang buried hill. On this basis, 67 small fault blocks divided in the study area are classified and counted. Further, according to the seismic profile and logging data, the well data and reservoir profile of characteristic wells are counted and compared, and the reservoir forming characteristics and main controlling factors of Dawangzhuang buried hill are found. The above understanding has certain guiding significance for the further exploration of Dawangzhuang buried hill. 展开更多
关键词 dawangzhuang buried hill construction style forward fault block reverse fault block reservoir fo
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Design Method of Reversely Switched Dynistor Based Pulse Circuit Without Magnetic Switch
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作者 Yicheng Pi Lin Liang Xiaoxue Yan 《CSEE Journal of Power and Energy Systems》 SCIE EI CSCD 2023年第1期306-314,共9页
In the reversely switched dynistor(RSD)-based pulse power circuits,a magnetic switch is usually necessary to be applied together with a main switch.It occupies space and needs a magnetic reset.In this paper,a method o... In the reversely switched dynistor(RSD)-based pulse power circuits,a magnetic switch is usually necessary to be applied together with a main switch.It occupies space and needs a magnetic reset.In this paper,a method of designing a RSD-based pulse circuit without a magnetic switch is proposed.In the pulse circuit,a RBDT(reverse blocking diode thyristor)is used to separate the two capacitors and provide an energy branch.The pre-charge time of the RSD can be guaranteed by the energy conversion between the capacitors and inductors,instead of the saturation of the magnetic switch.In addition,the energy which is reused to trigger the RSD is based on an inductor.The pulse circuit is evaluated by simulations and practical experiments.According to the experimental results,the factors affecting the load pulse current and triggering of the RSD and RBDT are studied.Meanwhile,a method to reduce the current in the trigger switch,which is a potential problem in the pulse circuit,is proposed. 展开更多
关键词 Magnetic switch pulse power circuit reversely switched dynistor(RSD) reverse blocking diode thyristor(RBDT)
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Novel Modular Multilevel Converter Against DC Faults for HVDC Applications 被引量:2
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作者 Xiaofeng Yang Yao Xue +3 位作者 Bowei Chen Zhiqin Lin Trillion Q.Zheng Yan Li 《CSEE Journal of Power and Energy Systems》 SCIE 2017年第2期140-149,共10页
In view of the DC fault current isolation deficiency for the conventional half-bridge sub-module(HBSM)based modular multilevel converter(MMC),this paper presents an improved MMC topology.Both quasi reverse blocking su... In view of the DC fault current isolation deficiency for the conventional half-bridge sub-module(HBSM)based modular multilevel converter(MMC),this paper presents an improved MMC topology.Both quasi reverse blocking submodules(QRBSMs)and current limit modules(CLMs)are employed to improve the DC fault handling capability for HVDC applications.This paper analyzes such a new converter configuration and operation principles.Then the DC pole-to-pole short circuit fault is taken into consideration for further study,as well as the fault current blocking mechanism and quantitative relationship between system electrical stress and key parameters.To validate the feasibility of the proposed topology and fault protection theory,extensive simulation results are demonstrated.It is concluded that the QRB-MMC can effectively block the fault current under DC fault condition.In addition,CLMs play an important role in further accelerating fault current attenuation.Moreover,QRB-MMC employs the original control and modulation strategies under normal operation conditions;thus,it further reduces the complexity of industry design. 展开更多
关键词 Current limit module DC faults HVDC transmission modular multilevel converter quasi reverse blocking sub-module
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