Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resist...Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.展开更多
With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of dat...With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.展开更多
With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure,low power consumption,and rich switching dynamics r...Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure,low power consumption,and rich switching dynamics resembling biological synapses and neurons in the last decades.Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years.Versatile dynamics are involved in the data processing and storage in biological neurons and synapses,which ask for carefully tuning the switching dynamics of the memristive emulators.Note that switching dynamics of the memristive devices are closely related to switching mechanisms.Herein,from the perspective of switching dynamics modulations,the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed.The approaches to tune the switching dynamics in the devices with different mechanisms have been described.Finally,some other mechanisms involved in neuromorphic computing are briefly introduced.展开更多
Neuromorphic computing has the potential to overcome limitations of traditional silicon technology in machine learning tasks.Recent advancements in large crossbar arrays and silicon-based asynchronous spiking neural n...Neuromorphic computing has the potential to overcome limitations of traditional silicon technology in machine learning tasks.Recent advancements in large crossbar arrays and silicon-based asynchronous spiking neural networks have led to promising neuromorphic systems.However,developing compact parallel computing technology for integrating artificial neural networks into traditional hardware remains a challenge.Organic computational materials offer affordable,biocompatible neuromorphic devices with exceptional adjustability and energy-efficient switching.Here,the review investigates the advancements made in the development of organic neuromorphic devices.This review explores resistive switching mechanisms such as interface-regulated filament growth,molecular-electronic dynamics,nanowire-confined filament growth,and vacancy-assisted ion migration,while proposing methodologies to enhance state retention and conductance adjustment.The survey examines the challenges faced in implementing low-power neuromorphic computing,e.g.,reducing device size and improving switching time.The review analyses the potential of these materials in adjustable,flexible,and low-power consumption applications,viz.biohybrid spiking circuits interacting with biological systems,systems that respond to specific events,robotics,intelligent agents,neuromorphic computing,neuromorphic bioelectronics,neuroscience,and other applications,and prospects of this technology.展开更多
This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-...This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.展开更多
Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we constr...Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.展开更多
The conductive path formed by the interstitial Ag or substitutional Ag in Hf02 was investigated by using the Vienna ab initio simulation package based on the DFT theory. The calculated results indicated that the order...The conductive path formed by the interstitial Ag or substitutional Ag in Hf02 was investigated by using the Vienna ab initio simulation package based on the DFT theory. The calculated results indicated that the ordering of interstitial Ag ions at special positions can form a conductive path, and it cannot form at other positions.The orientation dependence of this conductive path was then investigated. Various types of super cells are also built to study the rupture of the path, which corresponds to some possible ＂off＂ states.展开更多
基金Supported by the Joint Funds of the National Natural Science Foundation of China and the Chinese Academy of Sciences’Large-Scale Scientific Facility under Grant No U1532149the National Basic Research Program of China under Grant No2014CB931704
文摘Polycrystalline LaCrO3（LCO） thin films are deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching（RS） behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of ~104 between the high resistance state（HRS） and low resistance state（LRS） and exhibits excellent endurance/retention characteristics.The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies,which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results.Further analysis shows that the reset current IR and reset power PR in the reset processes exhibit a scaling law with the resistance in LRS（R0）, which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.60921062)
文摘With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1832116 and 51772112)Fundamental Research Funds for the Central Universities,China(Grant No.HUST:2016YXZD058).
文摘Memristive devices have attracted intensive attention in developing hardware neuromorphic computing systems with high energy efficiency due to their simple structure,low power consumption,and rich switching dynamics resembling biological synapses and neurons in the last decades.Fruitful demonstrations have been achieved in memristive synapses neurons and neural networks in the last few years.Versatile dynamics are involved in the data processing and storage in biological neurons and synapses,which ask for carefully tuning the switching dynamics of the memristive emulators.Note that switching dynamics of the memristive devices are closely related to switching mechanisms.Herein,from the perspective of switching dynamics modulations,the mainstream switching mechanisms including redox reaction with ion migration and electronic effect have been systemically reviewed.The approaches to tune the switching dynamics in the devices with different mechanisms have been described.Finally,some other mechanisms involved in neuromorphic computing are briefly introduced.
基金financially supported by the Ministry of Education(Singapore)(MOE-T2EP50220-0022)SUTD-MIT International Design Center(Singapore)+3 种基金SUTD-ZJU IDEA Grant Program(SUTD-ZJU(VP)201903)SUTD Kickstarter Initiative(SKI 2021_02_03,SKI 2021_02_17,SKI 2021_01_04)Agency of Science,Technology and Research(Singapore)(A20G9b0135)National Supercomputing Centre(Singapore)(15001618)。
文摘Neuromorphic computing has the potential to overcome limitations of traditional silicon technology in machine learning tasks.Recent advancements in large crossbar arrays and silicon-based asynchronous spiking neural networks have led to promising neuromorphic systems.However,developing compact parallel computing technology for integrating artificial neural networks into traditional hardware remains a challenge.Organic computational materials offer affordable,biocompatible neuromorphic devices with exceptional adjustability and energy-efficient switching.Here,the review investigates the advancements made in the development of organic neuromorphic devices.This review explores resistive switching mechanisms such as interface-regulated filament growth,molecular-electronic dynamics,nanowire-confined filament growth,and vacancy-assisted ion migration,while proposing methodologies to enhance state retention and conductance adjustment.The survey examines the challenges faced in implementing low-power neuromorphic computing,e.g.,reducing device size and improving switching time.The review analyses the potential of these materials in adjustable,flexible,and low-power consumption applications,viz.biohybrid spiking circuits interacting with biological systems,systems that respond to specific events,robotics,intelligent agents,neuromorphic computing,neuromorphic bioelectronics,neuroscience,and other applications,and prospects of this technology.
基金supported in part by the National Natural Science Foundation of China(Grant Nos.51602160 and 61605086)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20150842)the Talent Project of Nanjing University of Posts and Telecommunications(NUPTSF)(Grant No.NY222127)。
文摘This study investigates the impact of oxide bottom electrode(BE)material and orientation on the resistive switching(RS)characteristics of Al/ZrO_(2)-based ReRAM devices.Devices with different oxide BEs,including(400)-and(222)-oriented ITO BEs deposited under pure argon and argon–oxygen(20%O_(2))sputtering atmospheres,as well as SrRuO_(3)(SRO),show distinct RS behaviors.The Al/ZrO_(2)/(400)-ITO and Al/ZrO_(2)/SRO devices demonstrate stable bipolar RS performance,with(400)-ITO enabling an abrupt reset process,a wider memory window(>10^(4)),and superior stability,while SRO devices exhibit gradual reset transitions with lower power consumption.Furthermore,the crystallographic orientation control applied to ITO BE significantly affects the V_(O) dynamics and RS performance,with(222)-ITO devices exhibiting irreversible RS behavior.It is irrefutable that BE material and its orientation can strongly influence RS performance by modulating the V_(O) dynamics,electric field distribution,and conductive filament behavior.These findings underscore the importance of BE properties in optimizing ReRAM performance and provide valuable guidance for the development of high-efficiency memory devices.
基金Chenzhou Science and Technology Plan Project of China(Grant No.ZDYF2020159)Scientific Research Project of Hunan Provincial Department of Education(Grant No.21C0708)。
文摘Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.
基金supported by the National Youth Science Foundation,China(No.61006064)
文摘The conductive path formed by the interstitial Ag or substitutional Ag in Hf02 was investigated by using the Vienna ab initio simulation package based on the DFT theory. The calculated results indicated that the ordering of interstitial Ag ions at special positions can form a conductive path, and it cannot form at other positions.The orientation dependence of this conductive path was then investigated. Various types of super cells are also built to study the rupture of the path, which corresponds to some possible ＂off＂ states.
