Parvalbumin-positive(PV^(+))interneuron dysfunction is believed to be linked to autism spectrum disorder(ASD),a neurodevelopmental disorder characterized by social deficits and stereotypical behaviors.However,the mech...Parvalbumin-positive(PV^(+))interneuron dysfunction is believed to be linked to autism spectrum disorder(ASD),a neurodevelopmental disorder characterized by social deficits and stereotypical behaviors.However,the mechanisms behind PV^(+)interneuron dysfunction remain largely unclear.Here,we found that a deficiency of Biorientation Defective 1(Bod1)in PV^(+)interneurons led to an ASD-like phenotype in Pvalb-Cre;Bod1f/f mice.Mechanistically,we observed that Bod1 deficiency induced hypoactivity of PV^(+)interneurons and hyperactivity of calcium/calmodulin-dependent protein kinaseⅡalpha(CaMKⅡα)neurons in the medial prefrontal cortex,as determined by whole-cell patch-clamp recording.Additionally,Bod1 deficiency decreased the power of highgamma oscillation,assessed by in vivo multi-channel electrophysiological recording.Furthermore,we found that Bod1 deficiency enhanced the inwardly rectifying K^(+)current,leading to an increase in the resting membrane potential of PV^(+)interneurons.Importantly,the gain-of-function of Bod1 improved social deficits and stereotypical behaviors in Pvalb-Cre;Bod1f/f mice.These findings provide mechanistic insights into the PV^(+)interneuron dysfunction and suggest new strategies for developing PV^(+)interneuron-targeted therapies for ASD.展开更多
Rational design and construction of oxygen reduction reaction(ORR)electrocatalysts with high activity,good stability,and low price are essential for the practical applications of renewable energy conversion devices,su...Rational design and construction of oxygen reduction reaction(ORR)electrocatalysts with high activity,good stability,and low price are essential for the practical applications of renewable energy conversion devices,such as metal-air batteries.Electronic modification through constructing metal/semiconductor Schottky heterointerface represents a powerful strategy to enhance the electrochemical performance.Herein,we demonstrate a concept of Schottky electrocatalyst composed of uniform Co nanoparticles in situ anchored on the carbon nanotubes aligned on the carbon nanosheets(denoted as Co@N-CNTs/NSs hereafter)toward ORR.Both experimental findings and theoretical simulation testify that the rectifying contact could impel the voluntary electron flow from Co to N-CNTs/NSs and create an internal electric field,thereby boosting the electron transfer rate and improving the intrinsic activity.As a consequence,the Co@N-CNTs/NSs deliver outstanding ORR activity,impressive long-term durability,excellent methanol tolerance,and good performance as the air-cathode in the Zn-air batteries.The design concept of Schottky contact may provide the innovational inspirations for the synthesis of advanced catalysts in sustainable energy conversion fields.展开更多
The anchoring eccentricity of the bolt and cable bolt is a common problem in geotechnical support engineering and affects the ability of the bolt and cable bolt to control the rock mass to a certain extent.This paper ...The anchoring eccentricity of the bolt and cable bolt is a common problem in geotechnical support engineering and affects the ability of the bolt and cable bolt to control the rock mass to a certain extent.This paper reports on numerical simulation and laboratory experiments conducted to clarify the effect of eccentricity on the anchoring quality of the bolt and cable bolt,and to establish an effective solution strategy.The results reveal that the anchoring eccentricity causes unbalanced stress distribution and the uncoordinated deformation of the resin layer,which results in higher stress and greater deformation of the resin layer at the near side of the rod body.Additionally,as the degree of anchoring eccentricity increases,the effect becomes more significant,and the resin layer of the anchoring system becomes more likely to undergo preferential failure locally,which weakens the load-bearing performance of the anchoring system.This paper develops an innovative bolt anchoring rectifying device(B-ARD)and cable bolt anchoring rectifying device(C-ARD)on the basis of the structural characteristics of the bolt and cable bolt to better ensure the anchoring effect of them.The working effects of these two devices were verified in detailed experiments and analysis.The experimental results show that the anchoring rectifying devices(ARD)improve and ensure the anchoring concentricity of the bolt and cable bolt,which will help improve the supporting performance of them.The paper provides a convenient and effective method for improving the anchoring concentricity of the bolt and cable bolt,and provides a concept and reference for technical research on improving the effect of roof bolting.展开更多
With the growing needs of prepreg tapes for the automated fiber placement(AFP),the deviation-rectifying of prepreg in slitting process was investigated on a self-developed 16-tow prepreg slitting and winding machine.T...With the growing needs of prepreg tapes for the automated fiber placement(AFP),the deviation-rectifying of prepreg in slitting process was investigated on a self-developed 16-tow prepreg slitting and winding machine.The process of slitting and rewinding of prepreg tape was introduced,and the reason of prepreg tape deviation in slitting process was analyzed.In order to ensure the quality of the narrow prepreg slits,the application of the fuzzy PID algorithm in a closed-loop control system was discussed.A fuzzy PID algorithm was designed by combining fuzzy rules and PID controller.By applying it to precise deviation-rectifying control strategy,the automatic control of rectification could be achieved with accuracy of 0.1 mm,which satisfies the requirement of the prepreg tape both in slitting quality and layup quality for AFP.展开更多
Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation...Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.展开更多
Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to Ga...Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This “rectifying” effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit （VEPF） analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.展开更多
An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline （PANI） derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substitut...An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline （PANI） derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. of the film, the side with being irradiated by UV light during preparation is represented as ＇A side＇; the other side without being irradiated is represented as ＇N side＇. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current voltage characteristic curves with the values of rectifying ratio （30 being 20 at ±0.06 V at T = 77 K and 4 at ±0.02 V at T = 300 K separately.展开更多
ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rect...ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm^2 and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures＇ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.展开更多
This paper reports that the Schottky junctions between low work function metals （e.g. Al and In） and doped semiconducting polymer pellets （e.g. polyaniline （PANI） microsphere pellet and polypyrrole （PPy） nanotu...This paper reports that the Schottky junctions between low work function metals （e.g. Al and In） and doped semiconducting polymer pellets （e.g. polyaniline （PANI） microsphere pellet and polypyrrole （PPy） nanotube pellet） have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I - V characteristic curves （rectifying ratio γ = 5 at ±6 V bias at room temperature）. As compared to the Al/PANI/Ag, the heterojunction between In and PANI （In/PANI/Ag） exhibits a lower rectifying ratio γ= 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag （γ = 3.2 at ±1.6 V bias） and In/PPy/Ag （γ = 1.2 at ±3.0 V bias）. The results were discussed in terms of thermoionic emission theory.展开更多
The group of peasant laborer, being a beneficial group in present Chinese society, has already come into being, which is both outcome of duality and the important strength breaking duality in Chinese society. However,...The group of peasant laborer, being a beneficial group in present Chinese society, has already come into being, which is both outcome of duality and the important strength breaking duality in Chinese society. However, for a long time the severe maladjustments of peasant laborer group＇s not only engender the injustice of their position but also do harm to the development of social structure and economic growth in China. Therefore, describing the position of peasant laborer group and analyzing the consequence which causes by their imbalance position may have significant impact on perfecting Chinese social structure and attaining the objectives of combining the city with countryside in theory and practice.展开更多
A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties ar...A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.展开更多
We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the roto...We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the rotor part. When the rotor part is parallel with the stator part, a better rectifying performance can be found in the current-voltage curve. However, when the rotor part revolves to vertical with the stator part, the currents in the positive bias region decrease slightly. More importantly, the rectifying performance disappears. Thus this offers us a new method to modulate the rectifying behavior in molecular devices.展开更多
Scanning tunneling spectroscopy (STS) was used for investigation of rectification properties of molecules with spatial asymmetry. The molecules of cetyltrimethylammonium derivatives of 10-molibdo-2-vanadophosphate-ani...Scanning tunneling spectroscopy (STS) was used for investigation of rectification properties of molecules with spatial asymmetry. The molecules of cetyltrimethylammonium derivatives of 10-molibdo-2-vanadophosphate-anions [PMo10V2O40]﹣5 (CTMVA) were adsorbed on a surface of pyrolytic graphite (HOPG). Consequently, both good diode properties and J(V)-curves reproducibility of the film were revealed. The validity of the single-level model for the evaluation of the system parameters is discussed.展开更多
In this paper,we aim to summarize the recent development of radio-frequency(RF)-to-dc rectifying circuits designed for microwave power transfer(MPT)systems.First,we review the history of the rectification development ...In this paper,we aim to summarize the recent development of radio-frequency(RF)-to-dc rectifying circuits designed for microwave power transfer(MPT)systems.First,we review the history of the rectification development from mechanical devices to wide-bandgap semiconductors.Next,according to their operating frequencies and input power levels,we summarize the rectifying diode devices widely used in the literature,which can be used as a guide manual to select the rectifying diodes properly for designing the rectifying circuits.Then,various rectifying circuits developed at different input power levels in recent years are summarized.Finally,we summarize the methods to model the diodes for more precise design of the RF-to-dc rectifying circuits.展开更多
Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
Developing efficient electrocatalysts for selective nitrate contamination reduction into value-added ammonia is significant.Here,heterostructured Co/CoO nanosheet arrays(Co/CoO NSAs)exhibited excellent Faradaic effici...Developing efficient electrocatalysts for selective nitrate contamination reduction into value-added ammonia is significant.Here,heterostructured Co/CoO nanosheet arrays(Co/CoO NSAs)exhibited excellent Faradaic efficiency(93.8%)and selectivity(91.2%)for nitrate electroreduction to ammonia,greatly outperforming Co NSAs.15N isotope labeling experiments and 1H nuclear magnetic resonance(NMR)quantitative testing methods confirmed the origin of the produced ammonia.Electrochemical in situ Fourier transform infrared(FTIR)spectroscopy,online differential electrochemical mass spectrometry(DEMS)data and density functional theory(DFT)results revealed that the superior performances arose from the electron deficiency of Co induced by the rectifying Schottky contact in the Co/CoO heterostructures.The electron transfer from Co to CoO at the interface could not only suppress the competitive hydrogen evolution reaction,but also increase energy barriers for by-products,thus leading to high Faradaic efficiency and selectivity of ammonia.展开更多
Dear Editor,Abscisic acid （ABA） induces turgot loss and hence stomatal closure by promoting rapid net K^＋ efflux from guard cells （GCs） through outward-rectifying K^＋ （K^＋out） channels （Schroeder et al., 198...Dear Editor,Abscisic acid （ABA） induces turgot loss and hence stomatal closure by promoting rapid net K^＋ efflux from guard cells （GCs） through outward-rectifying K^＋ （K^＋out） channels （Schroeder et al., 1987; Blatt, 1990）. The mechanisms of ABA signaling in GCs are detailed elsewhere （see Munemasa et al., 2015; Weiner et al., 2010; Pandey et al., 2007）. Briefly, ABA binds to the PYR/ PYL/RCARs, a family of soluble steroidogenic acute regulatory- related lipid transfer （START） proteins, and, in turn, inactivates the downstream PP2C （type 2C protein phosphatase）, leading to the activation of SnRK2.6 （SNF1 [sucrose non-fermenting-1- related protein kinase]/OST1 [open stomata 1]） protein kinases.展开更多
One of the strategies to tune current-voltage behaviors in organic diodes is to combine field-induced charge transfer processes with schottky barrier.According to this principle,a rectifying diode with hysteresis effe...One of the strategies to tune current-voltage behaviors in organic diodes is to combine field-induced charge transfer processes with schottky barrier.According to this principle,a rectifying diode with hysteresis effect was fabricated utilizing a hybrid of electroactive polystyrene derivative covalently tethered with electron-donor carbazole moieties and electrostatic linked with electron-acceptor CdTe nanocrystals.Current-voltage characteristics show an electrical switching behavior with some hysteresis is only observed under a negative bias,with three orders of On/Off current ratio.The hybrid material based rectifier exhibits a rectification ratio of six and its maximum rectified output current is about 5 × 10-5 A.The asymmetric switching is interpreted as the result of both field induced charge transfer and schottky barrier,capable of reducing the misreading of cross-bar memory.Meanwhile,chemical doping of CdTe nanocrystals instead of physical blend favor their uniform dispersion in matrix and stable operation of device.展开更多
The global adoption of Electric Vehicles(EVs)is on the rise due to their advanced features,with projections indicating they will soon dominate the private vehicle market.However,improper management of EV charging can ...The global adoption of Electric Vehicles(EVs)is on the rise due to their advanced features,with projections indicating they will soon dominate the private vehicle market.However,improper management of EV charging can lead to significant issues.This paper reviews the development of high-power,reliable charging solutions by examining the converter topologies used in rectifiers and converters that transfer electricity from the grid to EV batteries.It covers technical details,ongoing developments,and challenges related to these topologies and control strategies.The integration of rapid charging stations has introduced various Power Quality(PQ)issues,such as voltage fluctuations,harmonic distortion,and supra-harmonics,which are discussed in detail.The paper also highlights the benefits of controlled EV charging and discharging,including voltage and frequency regulation,reactive power compensation,and improved power quality.Efficient energy management and control strategies are crucial for optimizing EV battery charging within microgrids to meet increasing demand.Charging stations must adhere to specific converter topologies,control strategies,and industry standards to function correctly.The paper explores microgrid architectures and control strategies that integrate EVs,energy storage units(ESUs),and Renewable Energy Sources(RES)to enhance performance at charging points.It emphasizes the importance of various RES-connected architectures and the latest power converter topologies.Additionally,the paper provides a comparative analysis of microgrid-based charging station architectures,focusing on energy management,control strategies,and charging converter controls.The goal is to offer insights into future research directions in EV charging systems,including architectural considerations,control factors,and their respective advantages and disadvantages.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2022YFE0108600 to Y.M.L.)the National Natural Science Foundations of China(Grant Nos.82473918 and 82104162 to X.X.L.).
文摘Parvalbumin-positive(PV^(+))interneuron dysfunction is believed to be linked to autism spectrum disorder(ASD),a neurodevelopmental disorder characterized by social deficits and stereotypical behaviors.However,the mechanisms behind PV^(+)interneuron dysfunction remain largely unclear.Here,we found that a deficiency of Biorientation Defective 1(Bod1)in PV^(+)interneurons led to an ASD-like phenotype in Pvalb-Cre;Bod1f/f mice.Mechanistically,we observed that Bod1 deficiency induced hypoactivity of PV^(+)interneurons and hyperactivity of calcium/calmodulin-dependent protein kinaseⅡalpha(CaMKⅡα)neurons in the medial prefrontal cortex,as determined by whole-cell patch-clamp recording.Additionally,Bod1 deficiency decreased the power of highgamma oscillation,assessed by in vivo multi-channel electrophysiological recording.Furthermore,we found that Bod1 deficiency enhanced the inwardly rectifying K^(+)current,leading to an increase in the resting membrane potential of PV^(+)interneurons.Importantly,the gain-of-function of Bod1 improved social deficits and stereotypical behaviors in Pvalb-Cre;Bod1f/f mice.These findings provide mechanistic insights into the PV^(+)interneuron dysfunction and suggest new strategies for developing PV^(+)interneuron-targeted therapies for ASD.
基金This study was financially supported by the National Natural Science Foundation of China(Grant/Award Number:22232004,22272179,21972068,and 22072067).
文摘Rational design and construction of oxygen reduction reaction(ORR)electrocatalysts with high activity,good stability,and low price are essential for the practical applications of renewable energy conversion devices,such as metal-air batteries.Electronic modification through constructing metal/semiconductor Schottky heterointerface represents a powerful strategy to enhance the electrochemical performance.Herein,we demonstrate a concept of Schottky electrocatalyst composed of uniform Co nanoparticles in situ anchored on the carbon nanotubes aligned on the carbon nanosheets(denoted as Co@N-CNTs/NSs hereafter)toward ORR.Both experimental findings and theoretical simulation testify that the rectifying contact could impel the voluntary electron flow from Co to N-CNTs/NSs and create an internal electric field,thereby boosting the electron transfer rate and improving the intrinsic activity.As a consequence,the Co@N-CNTs/NSs deliver outstanding ORR activity,impressive long-term durability,excellent methanol tolerance,and good performance as the air-cathode in the Zn-air batteries.The design concept of Schottky contact may provide the innovational inspirations for the synthesis of advanced catalysts in sustainable energy conversion fields.
基金This study was supported by the National Natural Science Foundation of China(No.52074102)Foundation for Distinguished Young Talents in Higher Education of Henan(No.212300410006)+1 种基金Foundation for the Science and Technology Innovation Talents Project of Universities in Henan(No.22HASTIT010)Special Funds for Fundamental Scientific Research Expenses of Universities in Henan(No.NSFRF210202).
文摘The anchoring eccentricity of the bolt and cable bolt is a common problem in geotechnical support engineering and affects the ability of the bolt and cable bolt to control the rock mass to a certain extent.This paper reports on numerical simulation and laboratory experiments conducted to clarify the effect of eccentricity on the anchoring quality of the bolt and cable bolt,and to establish an effective solution strategy.The results reveal that the anchoring eccentricity causes unbalanced stress distribution and the uncoordinated deformation of the resin layer,which results in higher stress and greater deformation of the resin layer at the near side of the rod body.Additionally,as the degree of anchoring eccentricity increases,the effect becomes more significant,and the resin layer of the anchoring system becomes more likely to undergo preferential failure locally,which weakens the load-bearing performance of the anchoring system.This paper develops an innovative bolt anchoring rectifying device(B-ARD)and cable bolt anchoring rectifying device(C-ARD)on the basis of the structural characteristics of the bolt and cable bolt to better ensure the anchoring effect of them.The working effects of these two devices were verified in detailed experiments and analysis.The experimental results show that the anchoring rectifying devices(ARD)improve and ensure the anchoring concentricity of the bolt and cable bolt,which will help improve the supporting performance of them.The paper provides a convenient and effective method for improving the anchoring concentricity of the bolt and cable bolt,and provides a concept and reference for technical research on improving the effect of roof bolting.
基金financially supported by the National Basic Research Program of China(973Program)the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Fundamental Research Funds for the Central Universities ( No. 3082615NS2015056)
文摘With the growing needs of prepreg tapes for the automated fiber placement(AFP),the deviation-rectifying of prepreg in slitting process was investigated on a self-developed 16-tow prepreg slitting and winding machine.The process of slitting and rewinding of prepreg tape was introduced,and the reason of prepreg tape deviation in slitting process was analyzed.In order to ensure the quality of the narrow prepreg slits,the application of the fuzzy PID algorithm in a closed-loop control system was discussed.A fuzzy PID algorithm was designed by combining fuzzy rules and PID controller.By applying it to precise deviation-rectifying control strategy,the automatic control of rectification could be achieved with accuracy of 0.1 mm,which satisfies the requirement of the prepreg tape both in slitting quality and layup quality for AFP.
基金The project was supported by the Foundation of Chinese Academy of Sciences.
文摘Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode.
文摘Positron annihilation spectroscopy on GaN films grown on SiC substrate with MBE are presented. It is shown that the GaN/SiC interface is rectifying towards positrons, such that positrons can only travel from SiC to GaN and not vice versa. Potential steps seen by the positron at the GaN/SiC interface are calculated from experimental values of electron and positron work function. This “rectifying” effect has been successfully mimicked by inserting a thin region of very high electric field in the Variable Energy Positron Fit （VEPF） analysis. The built-in electric field is attributed to different positron affinities, dislocation and/or interface defects at the GaN/SiC interface.
基金Project supported by the National Natural Science Foundation of China (Grant No 10604038)the Program for New Century Excellent Talents in University,China (Grant No NCET-07-0472)
文摘An innovative heterojunction is fabricated between two sides of a freestanding thin film of HCl-doped polyaniline （PANI） derivative containing azobenzene side-chain, which is synthesized through an N-alkyl-substituted reaction. of the film, the side with being irradiated by UV light during preparation is represented as ＇A side＇; the other side without being irradiated is represented as ＇N side＇. The electrical properties of the heterojunction are measured and the rectifying effect is observed in the current voltage characteristic curves with the values of rectifying ratio （30 being 20 at ±0.06 V at T = 77 K and 4 at ±0.02 V at T = 300 K separately.
基金Project supported by the National Natural Science Foundation of China(Grant No.61078057)the Natural Science Foundation of Shannxi Province,China(Grant No.2011GM6013)+1 种基金the Northwestern Polytechnical University Foundation for Fundamental Research,China(Grant Nos.JC20110270 and JC201271)the Open Project of Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education,Lanzhou University,China(Grant No.LZUMMM2013001)
文摘ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm^2 and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures＇ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.
基金supported by the National Natural Science Foundation of China (Grant No 10604038)Program for New Century Excellent Talents in University of China (Grant No NCET2007)
文摘This paper reports that the Schottky junctions between low work function metals （e.g. Al and In） and doped semiconducting polymer pellets （e.g. polyaniline （PANI） microsphere pellet and polypyrrole （PPy） nanotube pellet） have been prepared and studied. Since Ag is a high work function metal which can make an ohmic contact with polymer, silver paste was used to fabricate the electrodes. The Al/PANI/Ag heterojunction shows an obvious rectifying effect as shown in I - V characteristic curves （rectifying ratio γ = 5 at ±6 V bias at room temperature）. As compared to the Al/PANI/Ag, the heterojunction between In and PANI （In/PANI/Ag） exhibits a lower rectifying ratio γ= 1.6 at ±2 V bias at room temperature. In addition, rectifying effect was also observed in the heterojunctions Al/PPy/Ag （γ = 3.2 at ±1.6 V bias） and In/PPy/Ag （γ = 1.2 at ±3.0 V bias）. The results were discussed in terms of thermoionic emission theory.
基金Social Sciences Fund of Heilongjiang Province(06B002)
文摘The group of peasant laborer, being a beneficial group in present Chinese society, has already come into being, which is both outcome of duality and the important strength breaking duality in Chinese society. However, for a long time the severe maladjustments of peasant laborer group＇s not only engender the injustice of their position but also do harm to the development of social structure and economic growth in China. Therefore, describing the position of peasant laborer group and analyzing the consequence which causes by their imbalance position may have significant impact on perfecting Chinese social structure and attaining the objectives of combining the city with countryside in theory and practice.
基金Project supported by the National Basic Research Program of China (Grant No.2011CB612305)the National Natural Science Foundation of China (Grant No.51372064)+1 种基金the One Hundred Persons Project of Hebei Province of China (Grant No.CPRC001)the Science and Technology Research Project of Colleges and Universities in Hebei Province,China (Grant No.QN20131040)
文摘A Bi2Sr2Co2Oy/Si heterojunction is obtained by growing a layer of p-type oxygen-deficient Bi2Sr2Co2Oy film on a commercial n-type silicon wafer by pulsed laser deposition. Its rectifying and photovoltaic properties are studied in a wide temperature range from 20 K to 300 K. The transport mechanism under the forward bias can be attributed to a trap- filled space-charge-limited current conduction mechanism. Under the irradiation of a 532-nm continuous wave laser, a clear photovoltaic effect is observed and the magnitude ofphotovoltage increases as the temperature decreases, The results demonstrate the potential application of a Bi2SrzCo2Oy-based heterojunction in the photoelectronic devices.
基金Supported by the Science and Technology Plan of Hunan Province under Grant No 2014SK3274
文摘We report ab initio calculations of the transport behavior of a phenyl substituted molecular motor. The calculated results show that the transport behavior of the device is sensitive to the rotation degree of the rotor part. When the rotor part is parallel with the stator part, a better rectifying performance can be found in the current-voltage curve. However, when the rotor part revolves to vertical with the stator part, the currents in the positive bias region decrease slightly. More importantly, the rectifying performance disappears. Thus this offers us a new method to modulate the rectifying behavior in molecular devices.
文摘Scanning tunneling spectroscopy (STS) was used for investigation of rectification properties of molecules with spatial asymmetry. The molecules of cetyltrimethylammonium derivatives of 10-molibdo-2-vanadophosphate-anions [PMo10V2O40]﹣5 (CTMVA) were adsorbed on a surface of pyrolytic graphite (HOPG). Consequently, both good diode properties and J(V)-curves reproducibility of the film were revealed. The validity of the single-level model for the evaluation of the system parameters is discussed.
文摘In this paper,we aim to summarize the recent development of radio-frequency(RF)-to-dc rectifying circuits designed for microwave power transfer(MPT)systems.First,we review the history of the rectification development from mechanical devices to wide-bandgap semiconductors.Next,according to their operating frequencies and input power levels,we summarize the rectifying diode devices widely used in the literature,which can be used as a guide manual to select the rectifying diodes properly for designing the rectifying circuits.Then,various rectifying circuits developed at different input power levels in recent years are summarized.Finally,we summarize the methods to model the diodes for more precise design of the RF-to-dc rectifying circuits.
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
基金supported by the National Natural Science Foundation of China(21871206,21701122)。
文摘Developing efficient electrocatalysts for selective nitrate contamination reduction into value-added ammonia is significant.Here,heterostructured Co/CoO nanosheet arrays(Co/CoO NSAs)exhibited excellent Faradaic efficiency(93.8%)and selectivity(91.2%)for nitrate electroreduction to ammonia,greatly outperforming Co NSAs.15N isotope labeling experiments and 1H nuclear magnetic resonance(NMR)quantitative testing methods confirmed the origin of the produced ammonia.Electrochemical in situ Fourier transform infrared(FTIR)spectroscopy,online differential electrochemical mass spectrometry(DEMS)data and density functional theory(DFT)results revealed that the superior performances arose from the electron deficiency of Co induced by the rectifying Schottky contact in the Co/CoO heterostructures.The electron transfer from Co to CoO at the interface could not only suppress the competitive hydrogen evolution reaction,but also increase energy barriers for by-products,thus leading to high Faradaic efficiency and selectivity of ammonia.
文摘Dear Editor,Abscisic acid （ABA） induces turgot loss and hence stomatal closure by promoting rapid net K^＋ efflux from guard cells （GCs） through outward-rectifying K^＋ （K^＋out） channels （Schroeder et al., 1987; Blatt, 1990）. The mechanisms of ABA signaling in GCs are detailed elsewhere （see Munemasa et al., 2015; Weiner et al., 2010; Pandey et al., 2007）. Briefly, ABA binds to the PYR/ PYL/RCARs, a family of soluble steroidogenic acute regulatory- related lipid transfer （START） proteins, and, in turn, inactivates the downstream PP2C （type 2C protein phosphatase）, leading to the activation of SnRK2.6 （SNF1 [sucrose non-fermenting-1- related protein kinase]/OST1 [open stomata 1]） protein kinases.
基金supported by the National Basic Research Pro-gram of China (973 projeet) (2009CB930600)National Natural Science Foundation of China (Grants 90406021,20704023,60876010,60706017,and 20774043)+3 种基金the Key Project of Chinese Ministry of Education (No. 104246, 208050, 707032, NCET-07-0446)the NSF of Jiangsu Province (Grants BK2008053, 08KJB510013, SJ209003and TJ207035)Research Fund for Postgraduate Innovation Project of Jiangsu Province (No. CX08B_083Z)STITP (No. 2009120)
文摘One of the strategies to tune current-voltage behaviors in organic diodes is to combine field-induced charge transfer processes with schottky barrier.According to this principle,a rectifying diode with hysteresis effect was fabricated utilizing a hybrid of electroactive polystyrene derivative covalently tethered with electron-donor carbazole moieties and electrostatic linked with electron-acceptor CdTe nanocrystals.Current-voltage characteristics show an electrical switching behavior with some hysteresis is only observed under a negative bias,with three orders of On/Off current ratio.The hybrid material based rectifier exhibits a rectification ratio of six and its maximum rectified output current is about 5 × 10-5 A.The asymmetric switching is interpreted as the result of both field induced charge transfer and schottky barrier,capable of reducing the misreading of cross-bar memory.Meanwhile,chemical doping of CdTe nanocrystals instead of physical blend favor their uniform dispersion in matrix and stable operation of device.
文摘The global adoption of Electric Vehicles(EVs)is on the rise due to their advanced features,with projections indicating they will soon dominate the private vehicle market.However,improper management of EV charging can lead to significant issues.This paper reviews the development of high-power,reliable charging solutions by examining the converter topologies used in rectifiers and converters that transfer electricity from the grid to EV batteries.It covers technical details,ongoing developments,and challenges related to these topologies and control strategies.The integration of rapid charging stations has introduced various Power Quality(PQ)issues,such as voltage fluctuations,harmonic distortion,and supra-harmonics,which are discussed in detail.The paper also highlights the benefits of controlled EV charging and discharging,including voltage and frequency regulation,reactive power compensation,and improved power quality.Efficient energy management and control strategies are crucial for optimizing EV battery charging within microgrids to meet increasing demand.Charging stations must adhere to specific converter topologies,control strategies,and industry standards to function correctly.The paper explores microgrid architectures and control strategies that integrate EVs,energy storage units(ESUs),and Renewable Energy Sources(RES)to enhance performance at charging points.It emphasizes the importance of various RES-connected architectures and the latest power converter topologies.Additionally,the paper provides a comparative analysis of microgrid-based charging station architectures,focusing on energy management,control strategies,and charging converter controls.The goal is to offer insights into future research directions in EV charging systems,including architectural considerations,control factors,and their respective advantages and disadvantages.
