Molecular diodes,which enable directional charge transport at the single-molecule scale,are pivotal components for logic operations in molecular electronics,showing promise for future energy-efficient devices and ultr...Molecular diodes,which enable directional charge transport at the single-molecule scale,are pivotal components for logic operations in molecular electronics,showing promise for future energy-efficient devices and ultracompact circuits.However,achieving high-performance molecular diodes with high rectification ratios(RR),operation stability,and reliable interconnections for logic operations still remains challenging.Recent advancements adopting noncovalent interactions to form supramolecular assemblies demonstrate promise in addressing this challenge by creating asymmetric electronic coupling while preserving efficient charge transport.In this review,we systematically summarize the designs of molecular diodes from single supramolecular junctions to self-assembled monolayer-based supramolecular junctions,and identify strategies using quantum interference to enhance the RR.These approaches provide valuable perspectives for highperformance single-molecule rectifiers through noncovalent supramolecular interactions,showcasing the potential of future bottom-up integration of molecular electronic devices.展开更多
本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2...本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2)上分别沉积铬/金电极,形成肖特基势垒,其中势垒高度不同导致载流子仅在一个方向上传输.通过控制掺杂浓度和栅极电压,可实现MoS_(2)和Sn_(x)Mo_(1−x)S_(2)之间费米能级的对齐调节,实现了可调整的整流比,最高达到104.令人印象深刻的是,该二极管还表现出优异的光伏特性,该器件在λ=400 nm处实现了40%的外量子效率值.此外,我们在无外部偏压条件下实现了自供电光电探测,该异质结二极管在400和650 nm波长处的响应率分别为0.12和0.16 A W^(-1).对应的探测率分别是4.9×10^(10)和6.4×10^(10)Jones.可调的掺杂浓度为进一步创造高效器件提供了可能.这种合成二维侧向二极管的策略丰富了异质结二极管的材料多样性,并为开发新型电子和光电器件提供了新的平台.展开更多
基金supported by the National Key R&D Program of China(grant no.2024YFA1208103)the National Natural Science Foundation of China(grant nos.22173075,21933012,22325303,22250003,and 22303071)+1 种基金the Fujian Provincial Department of Science and Technology(grant no.2023H6002)the Fundamental Research Funds for the Central Universities(grant nos.20720220020 and 20720200068).
文摘Molecular diodes,which enable directional charge transport at the single-molecule scale,are pivotal components for logic operations in molecular electronics,showing promise for future energy-efficient devices and ultracompact circuits.However,achieving high-performance molecular diodes with high rectification ratios(RR),operation stability,and reliable interconnections for logic operations still remains challenging.Recent advancements adopting noncovalent interactions to form supramolecular assemblies demonstrate promise in addressing this challenge by creating asymmetric electronic coupling while preserving efficient charge transport.In this review,we systematically summarize the designs of molecular diodes from single supramolecular junctions to self-assembled monolayer-based supramolecular junctions,and identify strategies using quantum interference to enhance the RR.These approaches provide valuable perspectives for highperformance single-molecule rectifiers through noncovalent supramolecular interactions,showcasing the potential of future bottom-up integration of molecular electronic devices.
基金supported by the National Key R&D Program of China (2022YFB3605500 and 2022YFB3605503)the National Natural Science Foundation of China (62074039 and 12004074)+1 种基金China Postdoctoral Science Foundation (2020M681141)the National Postdoctoral Program for Innovative Talents (BX20190070)。
基金supported by the National Key R&D Program of China(2022YFA1505200,2018YFA0306900)the National Natural Science Foundation of China(21872114,92163103)the Fundamental Research Funds for the Central Universities(20720210009)。
文摘本研究利用一步化学气相沉积技术制备了Sn_(x)Mo_(1−x)S_(2)/MoS_(2)横向异质结高性能二极管.通过选择性掺杂Sn原子到单层MoS_(2)的边缘,形成了与MoS_(2)相同晶格常数的Sn_(x)Mo_(1−x)S_(2).在边缘的Sn_(x)Mo_(1−x)S_(2)和内部的MoS_(2)上分别沉积铬/金电极,形成肖特基势垒,其中势垒高度不同导致载流子仅在一个方向上传输.通过控制掺杂浓度和栅极电压,可实现MoS_(2)和Sn_(x)Mo_(1−x)S_(2)之间费米能级的对齐调节,实现了可调整的整流比,最高达到104.令人印象深刻的是,该二极管还表现出优异的光伏特性,该器件在λ=400 nm处实现了40%的外量子效率值.此外,我们在无外部偏压条件下实现了自供电光电探测,该异质结二极管在400和650 nm波长处的响应率分别为0.12和0.16 A W^(-1).对应的探测率分别是4.9×10^(10)和6.4×10^(10)Jones.可调的掺杂浓度为进一步创造高效器件提供了可能.这种合成二维侧向二极管的策略丰富了异质结二极管的材料多样性,并为开发新型电子和光电器件提供了新的平台.
