Some approaches or parameters were employed to indicate the stage of stable pitting such as the energy distribution obtained by the wavelet analysis or the Hilbert spectra, the recurrence quantitative parameters obtai...Some approaches or parameters were employed to indicate the stage of stable pitting such as the energy distribution obtained by the wavelet analysis or the Hilbert spectra, the recurrence quantitative parameters obtained from the recurrence analysis, and the noise resistance as well in the electrochemical noise analysis. The pitting current density may be a key parameter for the stable pitting estimation which determined the dissolution-diffusion sustainable dynamic balance in the pit according to the theoretical framework proposed by Li, Scully, and Frankel.While the pit stable product defined the critical transportation condition under the high pitting current density.The pitting current growth rate as well as its amplitude was adopted to indicate the stable pitting transition according to the electrochemical transient analysis during the stainless-steel pitting process, which may provide the quantitative indicator agreed with the theoretical framework.展开更多
The silicon pixel sensor（SPS） is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection（SRD）. In this paper, the design, fabrication, and characterizat...The silicon pixel sensor（SPS） is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection（SRD）. In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p＋-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm^2, full depletion voltage 〈 50 V and breakdown voltage〉 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high（〈 20% for X-ray photon energy 〉 10 keV） and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.展开更多
基金support of the Ningxia Nature Science Foundation (2023AAC03339)
文摘Some approaches or parameters were employed to indicate the stage of stable pitting such as the energy distribution obtained by the wavelet analysis or the Hilbert spectra, the recurrence quantitative parameters obtained from the recurrence analysis, and the noise resistance as well in the electrochemical noise analysis. The pitting current density may be a key parameter for the stable pitting estimation which determined the dissolution-diffusion sustainable dynamic balance in the pit according to the theoretical framework proposed by Li, Scully, and Frankel.While the pit stable product defined the critical transportation condition under the high pitting current density.The pitting current growth rate as well as its amplitude was adopted to indicate the stable pitting transition according to the electrochemical transient analysis during the stainless-steel pitting process, which may provide the quantitative indicator agreed with the theoretical framework.
基金Supported by Prefabrication Research of Beijing Advanced Photon Source(R&D for BAPS)National Natural Science Foundation of China(11335010)
文摘The silicon pixel sensor（SPS） is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection（SRD）. In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p＋-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm^2, full depletion voltage 〈 50 V and breakdown voltage〉 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high（〈 20% for X-ray photon energy 〉 10 keV） and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.
