The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling j...The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.展开更多
With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,fr...A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.展开更多
Although phase-change random-access memory(PCRAM)is a promising next-generation nonvolatile memory technology,challenges remain in terms of reducing energy consumption.This is primarily be-cause the high thermal condu...Although phase-change random-access memory(PCRAM)is a promising next-generation nonvolatile memory technology,challenges remain in terms of reducing energy consumption.This is primarily be-cause the high thermal conductivities of phase-change materials(PCMs)promote Joule heating dissi-pation.Repeated phase transitions also induce long-range atomic diffusion,limiting the durability.To address these challenges,phase-change heterostructure(PCH)devices that incorporate confinement sub-layers based on transition-metal dichalcogenide materials have been developed.In this study,we engi-neered a PCH device by integrating HfTe_(2),which has low thermal conductivity and excellent stability,into the PCM to realize PCRAM with enhanced thermal efficiency and structural stability.HEAT sim-ulations were conducted to validate the superior heat confinement in the programming region of the HfTe_(2)-based PCH device.Moreover,electrical measurements of the device demonstrated its outstanding performance,which was characterized by a low RESET current(∼1.6 mA),stable two-order ON/OFF ratio,and exceptional cycling endurance(∼2×10^(7)).The structural integrity of the HfTe_(2)confinement sub-layer was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy.The material properties,including electrical conductivity,cohesive energy,and electronegativity,substantiated these findings.Collectively,these results revealed that the HfTe_(2)-based PCH device can achieve significant improvements in performance and reliability compared with conventional PCRAM devices.展开更多
Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive s...Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.展开更多
The exploitation of organic-inorganic hybrid perovskites(OIHPs) as active layer materials for typical sandwich-structured resistive memories has attracted widespread interest due to the property of low power consumpti...The exploitation of organic-inorganic hybrid perovskites(OIHPs) as active layer materials for typical sandwich-structured resistive memories has attracted widespread interest due to the property of low power consumption and fast switching. However, the inherent thermal instability of perovskites limits the application of OIHPs-based resistive memories under extreme conditions, while the infiuence of thermal effects on their resistance change characteristics remains unclear. Herein, a novel 2D <100>-oriented high-temperature resistant OIHP [(BIZ-H)_(2)(PbBr_(4))]n(BIZ = benzimidazole) is prepared as an active layer material to fabricate FTO/[(BIZ-H)_(2)(PbBr_(4))]n/Ag resistive memory with excellent thermal reproducibility and stability up to 120℃. The increase in temperature leads to a decrease in the PbBr_(6) octahedral distortion in the crystal structure, an increase in hydrogen bonding between the(BIZ-H)+cation and the(PbBr_(4))_(n)^(2n-)layer, and a shortening of the spacing of the inorganic layers, which is found to result in the creation and predominance of thermally activated traps with increasing temperature. This work provides a new direction for the next generation of OIHPs-based resistive memories with high-temperature tolerance.展开更多
This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde...This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.展开更多
As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we emp...As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices.展开更多
为了提高网络的接入成功率和有限前导资源利用率,提出了一种基于机器类型设备(machine type devices,MTD)分组和功率控制的前导复用随机接入策略。利用地面MTD与卫星基站之间的实时仰角关系,动态规划同一波束内不同位置的MTD,建立不同...为了提高网络的接入成功率和有限前导资源利用率,提出了一种基于机器类型设备(machine type devices,MTD)分组和功率控制的前导复用随机接入策略。利用地面MTD与卫星基站之间的实时仰角关系,动态规划同一波束内不同位置的MTD,建立不同分组索引与前导序列和发射功率的映射关系;通过不同分组的MTD使用不同发射功率产生的干扰消除效应来降低接入过程中前导序列碰撞率。仿真结果表明,提出的策略在大规模卫星物联网设备接入时具有良好的接入成功率和前导序列利用率,适应性和高效性优于其他资源再分配接入技术。展开更多
在面向卫星物联网的免授权随机接入(Grant-free Random Access,GFRA)系统中,受大规模连接和设备随机激活的影响,前导碰撞成为用户接入性能提升的主要制约因素。鉴于此,借助正交与非正交序列在前导检测和冲突抑制方面的各自优势,提出一...在面向卫星物联网的免授权随机接入(Grant-free Random Access,GFRA)系统中,受大规模连接和设备随机激活的影响,前导碰撞成为用户接入性能提升的主要制约因素。鉴于此,借助正交与非正交序列在前导检测和冲突抑制方面的各自优势,提出一种基于混合ZC(Zadoff-Chu)序列的大容量前导设计和检测方法。该方法利用正交ZC序列与其循环移位映射的不同根ZC序列级联来构建前导序列,并采用一种基于假设检验的两阶段干扰消除活跃用户检测算法,以确保大规模接入场景下的高精度用户识别。此外,对所提前导结构进行扩展,将相位旋转因子与多段非正交序列相结合,在不增加峰均比的前提下进一步扩大前导集容量。所提方法较现有复合和正交前导方法具有显著改善的多用户识别性能,在相同活跃用户下,成功检测概率最大提升约30.3%。展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61404161)
文摘The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
基金supported by the National Natural Science Foundation of China(No.11705276)the West Light Foundation of the Chinese Academy of Sciences(No.CAS-LWC-2017-2)
文摘A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.
基金financially supported by a National Research Foundation of Korea(NRF)grant funded by the Korean government(No.2016R1A3B1908249,RS202400407199).
文摘Although phase-change random-access memory(PCRAM)is a promising next-generation nonvolatile memory technology,challenges remain in terms of reducing energy consumption.This is primarily be-cause the high thermal conductivities of phase-change materials(PCMs)promote Joule heating dissi-pation.Repeated phase transitions also induce long-range atomic diffusion,limiting the durability.To address these challenges,phase-change heterostructure(PCH)devices that incorporate confinement sub-layers based on transition-metal dichalcogenide materials have been developed.In this study,we engi-neered a PCH device by integrating HfTe_(2),which has low thermal conductivity and excellent stability,into the PCM to realize PCRAM with enhanced thermal efficiency and structural stability.HEAT sim-ulations were conducted to validate the superior heat confinement in the programming region of the HfTe_(2)-based PCH device.Moreover,electrical measurements of the device demonstrated its outstanding performance,which was characterized by a low RESET current(∼1.6 mA),stable two-order ON/OFF ratio,and exceptional cycling endurance(∼2×10^(7)).The structural integrity of the HfTe_(2)confinement sub-layer was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy.The material properties,including electrical conductivity,cohesive energy,and electronegativity,substantiated these findings.Collectively,these results revealed that the HfTe_(2)-based PCH device can achieve significant improvements in performance and reliability compared with conventional PCRAM devices.
基金National Natural Science Foundation of China(No.61376017)。
文摘Vanadium oxide(VO_(x))has garnered significant attention in the realm of resistive random-access memory(RRAM)owing to its outstanding resistive switching characteristics.However,the ambiguous mechanisms of resistive switching and inferior stability hinder its practical applications.Herein,an RRAM named VO_(x)/TiO_(2)/n^(++)Si device is prepared.It displays bipolar resistive switching behavior and shows superior cycle endurance(>200),a significantly high on/off ratio(>10^(2))and long-term stability.The tremendous improvement in the stability of the VO_(x)/TiO_(2)/n^(++)Si device compared with the Cu/VOx/n^(++)Si device is due to the p-i-n structure of VO_(x)/TiO_(2)/n^(++)Si.The switching mechanism of the VO_(x)/TiO_(2)/n^(++)Si device is attributed to the growth and annihilation of Cu conductive filaments.
基金financially supported by the Ph.D. start-up funds of Jiangxi Science and Technology Normal University (Nos. 2023BSQD11, 2023BSQD13)Jiangxi Province Key Laboratory of Organic Functional Molecules (No. 2024SSY05141)。
文摘The exploitation of organic-inorganic hybrid perovskites(OIHPs) as active layer materials for typical sandwich-structured resistive memories has attracted widespread interest due to the property of low power consumption and fast switching. However, the inherent thermal instability of perovskites limits the application of OIHPs-based resistive memories under extreme conditions, while the infiuence of thermal effects on their resistance change characteristics remains unclear. Herein, a novel 2D <100>-oriented high-temperature resistant OIHP [(BIZ-H)_(2)(PbBr_(4))]n(BIZ = benzimidazole) is prepared as an active layer material to fabricate FTO/[(BIZ-H)_(2)(PbBr_(4))]n/Ag resistive memory with excellent thermal reproducibility and stability up to 120℃. The increase in temperature leads to a decrease in the PbBr_(6) octahedral distortion in the crystal structure, an increase in hydrogen bonding between the(BIZ-H)+cation and the(PbBr_(4))_(n)^(2n-)layer, and a shortening of the spacing of the inorganic layers, which is found to result in the creation and predominance of thermally activated traps with increasing temperature. This work provides a new direction for the next generation of OIHPs-based resistive memories with high-temperature tolerance.
基金supported by the National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment(No.6142910220208)National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.
基金supported by the National Research Foundation of Korea funded by the Korean Government(grant No.RS-2023-00208801).
文摘As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices.
文摘为了提高网络的接入成功率和有限前导资源利用率,提出了一种基于机器类型设备(machine type devices,MTD)分组和功率控制的前导复用随机接入策略。利用地面MTD与卫星基站之间的实时仰角关系,动态规划同一波束内不同位置的MTD,建立不同分组索引与前导序列和发射功率的映射关系;通过不同分组的MTD使用不同发射功率产生的干扰消除效应来降低接入过程中前导序列碰撞率。仿真结果表明,提出的策略在大规模卫星物联网设备接入时具有良好的接入成功率和前导序列利用率,适应性和高效性优于其他资源再分配接入技术。
文摘在面向卫星物联网的免授权随机接入(Grant-free Random Access,GFRA)系统中,受大规模连接和设备随机激活的影响,前导碰撞成为用户接入性能提升的主要制约因素。鉴于此,借助正交与非正交序列在前导检测和冲突抑制方面的各自优势,提出一种基于混合ZC(Zadoff-Chu)序列的大容量前导设计和检测方法。该方法利用正交ZC序列与其循环移位映射的不同根ZC序列级联来构建前导序列,并采用一种基于假设检验的两阶段干扰消除活跃用户检测算法,以确保大规模接入场景下的高精度用户识别。此外,对所提前导结构进行扩展,将相位旋转因子与多段非正交序列相结合,在不增加峰均比的前提下进一步扩大前导集容量。所提方法较现有复合和正交前导方法具有显著改善的多用户识别性能,在相同活跃用户下,成功检测概率最大提升约30.3%。
