The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling j...The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.展开更多
With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on ...With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.展开更多
A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,fr...A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.展开更多
The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conv...The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.展开更多
We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a t...We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a threestage fiber amplifier with an integrated acousto-optical modulator. A digital electronic control system with feedback combines the functions of the arbitrary micropulse selection and modulation resulting in macropulse envelope profiling. As a benefit, a narrow temporal transparency window of the modulator, comparable to a laser pulse repetition period, effectively improves temporal contrast. In experiments, we demonstrated rectangular laser pulse train profiling at the output of a three-cascade Yb-doped fiber amplifier.展开更多
Although phase-change random-access memory(PCRAM)is a promising next-generation nonvolatile memory technology,challenges remain in terms of reducing energy consumption.This is primarily be-cause the high thermal condu...Although phase-change random-access memory(PCRAM)is a promising next-generation nonvolatile memory technology,challenges remain in terms of reducing energy consumption.This is primarily be-cause the high thermal conductivities of phase-change materials(PCMs)promote Joule heating dissi-pation.Repeated phase transitions also induce long-range atomic diffusion,limiting the durability.To address these challenges,phase-change heterostructure(PCH)devices that incorporate confinement sub-layers based on transition-metal dichalcogenide materials have been developed.In this study,we engi-neered a PCH device by integrating HfTe_(2),which has low thermal conductivity and excellent stability,into the PCM to realize PCRAM with enhanced thermal efficiency and structural stability.HEAT sim-ulations were conducted to validate the superior heat confinement in the programming region of the HfTe_(2)-based PCH device.Moreover,electrical measurements of the device demonstrated its outstanding performance,which was characterized by a low RESET current(∼1.6 mA),stable two-order ON/OFF ratio,and exceptional cycling endurance(∼2×10^(7)).The structural integrity of the HfTe_(2)confinement sub-layer was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy.The material properties,including electrical conductivity,cohesive energy,and electronegativity,substantiated these findings.Collectively,these results revealed that the HfTe_(2)-based PCH device can achieve significant improvements in performance and reliability compared with conventional PCRAM devices.展开更多
As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we emp...As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61404161)
文摘The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories（MRAMs） with 0.13 μm and 0.18-μm complementary metal–oxide–semiconductor（CMOS） process respectively and different magnetic tunneling junctions（MTJs） are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad（Si） in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-μm process circuit exhibits better radiation tolerance than the 0.18-μm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60921062)
文摘With the progress of the semiconductor industry,the resistive random-access memory（RAM） has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.
基金supported by the National Natural Science Foundation of China(No.11705276)the West Light Foundation of the Chinese Academy of Sciences(No.CAS-LWC-2017-2)
文摘A magnetoresistive random-access memory(MRAM) device was irradiated by ^(60) Co c-rays and an electron beam.The synergistic effect of this on the MRAM was tested with an additional magnetic field during irradiation,from which the total ionizing dose(TID) and the synergistic damage mechanism of MRAM were analyzed.In addition,DC,AC,and functional parameters of the memory were tested under irradiation and annealing via a very large-scale integrated circuit test system.The radiation-sensitive parameters were obtained through analyzing the data.Because of the magnetic field applied on the MRAM while testing the synergistic effects,shallow trench isolation leakage and Frenkel–Poole emission due to synergistic effects were smaller than that of TID,and hence radiation damage of the synergistic effects was also lower.
基金supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (RS-2024-00334190)。
文摘The fabrication of a dynamic threshold-2T0C(DT-2T0C) DRAM cell incorporating a ZnO charge-trap layer in the write transistor has been successfully achieved, addressing the negative hold voltage(V_(HOLD)) issue of conventional 2T0C DRAM cells using oxide channel layers. The proposed device facilitates dynamic modulation of turn-on voltage(V_(ON)) through an additional SET operation, allowing V_(ON) to shift above 0 V. The retention time in SET operation was extended to 10^(4) s by optimizing the tunneling layer deposition conditions. The device characterization revealed a significant correlation between V_(ON) and both the WRITE speed and the retention properties of the DT-2T0C, verifying the trade-off between WRITE time and retention time. A long retention time over 1000 s was achieved, even under VHOLD of 0 V.
基金Russian Foundation for Basic Research(RFBR)(15-07-03719)Russian Science Foundation(RSF)(16-19-10448)Ministry of Education and Science of the Russian Federation(Minobrnauka)(14.Z50.31.0007,K2-2015-077)
文摘We report on the design and performance of a fiber laser system with adaptive acousto-optic macropulse control for a novel photocathode laser driver with 3D ellipsoidal pulse shaping. The laser system incorporates a threestage fiber amplifier with an integrated acousto-optical modulator. A digital electronic control system with feedback combines the functions of the arbitrary micropulse selection and modulation resulting in macropulse envelope profiling. As a benefit, a narrow temporal transparency window of the modulator, comparable to a laser pulse repetition period, effectively improves temporal contrast. In experiments, we demonstrated rectangular laser pulse train profiling at the output of a three-cascade Yb-doped fiber amplifier.
基金financially supported by a National Research Foundation of Korea(NRF)grant funded by the Korean government(No.2016R1A3B1908249,RS202400407199).
文摘Although phase-change random-access memory(PCRAM)is a promising next-generation nonvolatile memory technology,challenges remain in terms of reducing energy consumption.This is primarily be-cause the high thermal conductivities of phase-change materials(PCMs)promote Joule heating dissi-pation.Repeated phase transitions also induce long-range atomic diffusion,limiting the durability.To address these challenges,phase-change heterostructure(PCH)devices that incorporate confinement sub-layers based on transition-metal dichalcogenide materials have been developed.In this study,we engi-neered a PCH device by integrating HfTe_(2),which has low thermal conductivity and excellent stability,into the PCM to realize PCRAM with enhanced thermal efficiency and structural stability.HEAT sim-ulations were conducted to validate the superior heat confinement in the programming region of the HfTe_(2)-based PCH device.Moreover,electrical measurements of the device demonstrated its outstanding performance,which was characterized by a low RESET current(∼1.6 mA),stable two-order ON/OFF ratio,and exceptional cycling endurance(∼2×10^(7)).The structural integrity of the HfTe_(2)confinement sub-layer was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy.The material properties,including electrical conductivity,cohesive energy,and electronegativity,substantiated these findings.Collectively,these results revealed that the HfTe_(2)-based PCH device can achieve significant improvements in performance and reliability compared with conventional PCRAM devices.
基金supported by the National Research Foundation of Korea funded by the Korean Government(grant No.RS-2023-00208801).
文摘As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices.
