Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)is a highly successful conductive polymer utilized as an electrode material in energy storage units for portable and wearable electronic de-vices.Neve...Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)is a highly successful conductive polymer utilized as an electrode material in energy storage units for portable and wearable electronic de-vices.Nevertheless,employing PEDOT:PSS in supercapacitors(SC)in its pristine state presents challenges due to its suboptimal electrochemical performance and operational instability.To surmount these limita-tions,PEDOT:PSS has been integrated with carbon-based materials to form flexible electrodes,which ex-hibit physical and chemical stability during SC operation.We developed a streamlined fabrication process for high-performance SC electrodes composed of PEDOT:PSS and carbon quantum dots(CQDs).The CQDs were synthesized under microwave irradiation,yielding green-and red-light emissions.Through optimiz-ing the ratios of CQDs to PEDOT:PSS,the SC electrodes were prepared using a spray-coating technique,marking a significant improvement in device performance with a high volumetric capacitance(104.10 F cm-3),impressive energy density(19.68 Wh cm^(-3)),and excellent cyclic stability,retaining~85% of its original volumetric capacitance after 15,000 repeated GCD cycles.Moreover,the SCs,when utilized as a flexible substrate,demonstrated the ability to maintain up to~85% of their electrochemical performance even after 3,000 bending cycles(at a bending angle of 60°).These attributes render this hybrid composite an ideal candidate for a lightweight smart energy storage component in portable and wearable electronic technologies.展开更多
Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and v...Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.展开更多
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon ...The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.展开更多
The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges be...The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.展开更多
To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.T...To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.This source is based on spontaneous four-wave mixing(SFWM)in a piece of shallow-ridge silicon waveguide.Theoretical analysis shows that the waveguide dispersion could be tailored by adjusting the ridge width,enabling broadband photon pair generation by SFWM across C band and O band.The spontaneous Raman scattering(SpRS)in silicon waveguides is also investigated experimentally.It shows that there are two regions in the spectrum of generated photons from SpRS,which could be used to achieve cross-band photon pair generation.A chip of shallow-ridge silicon waveguide samples with different ridge widths has been fabricated,through which cross-band photon pair generation is demonstrated experimentally.The experimental results show that the source can be achieved using dispersion-optimized shallow-ridge silicon waveguides.This cross-band quantum light source provides a way to develop new fiber-based quantum communication functions utilizing both C band and O band and extends applications of quantum networks.展开更多
Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS...The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS QDs and hollow nanotube In_(2)O_(3)is successfully achieved using an electrostatic self-assembly method.Under visible light irradiation,all CdS-In_(2)O_(3)composites exhibit higher hydrogen evolution efficiency compared to pure CdS QDs.Notably,the photocatalytic H_(2)evolution rate of the optimal CdS-7%In_(2)O_(3)composite is determined to be 2258.59μmol g^(−1)h^(−1),approximately 12.3 times higher than that of pure CdS.The cyclic test indicates that the CdS-In_(2)O_(3)composite maintains considerable activity even after 5 cycles,indicating its excellent stability.In situ X-ray photoelectron spectroscopy and density functional theory calculations confirm that carrier migration in CdS-In_(2)O_(3)composites adheres to a typical S-scheme heterojunction mechanism.Additionally,a series of characterizations demonstrate that the formation of S-scheme heterojunctions between In_(2)O_(3)and CdS inhibits charge recombination and accelerates the separation and migration of photogenerated carriers in the CdS QDs,thus achieving enhanced photocatalytic performance.This work elucidates the pivotal role of S-scheme heterojunctions in photocatalytic H_(2)production and offers novel insights into the construction of effective composite photocatalysts.展开更多
Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum...Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum communication, and utilize the logical relationship between the measurements of each node to derive the unitary operation performed by the end node. The hierarchical simultaneous entanglement switching(HSES) method is adopted, resulting in a significant reduction in the consumption of classical information compared to multi-hop quantum teleportation(QT)based on general simultaneous entanglement switching(SES). In addition, the proposed protocol is simulated on the IBM Quantum Experiment platform(IBM QE). Then, the data obtained from the experiment are analyzed using quantum state tomography, which verifies the protocol's good fidelity and accuracy. Finally, by calculating fidelity, we analyze the impact of four different types of noise(phase-damping, amplitude-damping, phase-flip and bit-flip) in this protocol.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and...The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and mixed reality applications.Alongside the controlled synthesis of high-performance QDs,a reliable QD patterning technology is crucial in overcoming this challenge.Among the various methods available,photolithography-based patterning technologies show great potentials in producing ultra-fine QD patterns at micron scale.This review article presents the recent advancements in the field of QD patterning using photolithography techniques and explores their applications in micro-display technology.Firstly,we discuss QD patterning through photolithography techniques employing photoresist(PR),which falls into two categories:PRassisted photolithography and photolithography of QDPR.Subsequently,direct photolithography techniques based on photo-induced crosslinking of photosensitive groups and photo-induced ligand cleavage mechanisms are thoroughly reviewed.Meanwhile,we assess the performance of QD arrays fabricated using these photolithography techniques and their integration into QD light emitting diode display devices as well as color conversionbased micro light emitting diode display devices.Lastly,we summarize the most recent developments in this field and outline future prospects.展开更多
Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectr...Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.展开更多
With the rapid development of electric vehicles,hybrid electric vehicles and smart grids,people's demand for large-scale energy storage devices is increasingly intense.As a new type of secondary battery,potassium ...With the rapid development of electric vehicles,hybrid electric vehicles and smart grids,people's demand for large-scale energy storage devices is increasingly intense.As a new type of secondary battery,potassium ion battery is promising to replace the lithium-ion battery in the field of large-scale energy storage by virtue of its low price and environmental friendliness.At present,the research on the anode materials of potassium ion batteries mainly focuses on carbon materials and the design of various nanostructured metal-based materials.Problems such as poor rate performance and inferior cycle life caused by electrode structure comminution during charge and discharge have not been solved.Quantum dots/nanodots materials are a new type of nanomaterials that can effectively improve the utilization of electrode materials and reduce production costs.In addition,quantum dots/nanodots materials can enhance the electrode reaction kinetics,reduce the stress generated in cycling,and effectively alleviate the agglomeration and crushing of electrode materials.In this review,we will systematically introduce the synthesis methods,K+storage properties and K+storage mechanisms of carbon quantum dots and carbon-based transition metal compound quantum dots composites.This review will have significant references for potassium ion battery researchers.展开更多
Aqueous zinc ion batteries have received widespread attention.However,the growth of zinc dendrites and hydrogen evolution reaction generation seriously hinder the practical application of zinc ion bat-teries.Herein,it...Aqueous zinc ion batteries have received widespread attention.However,the growth of zinc dendrites and hydrogen evolution reaction generation seriously hinder the practical application of zinc ion bat-teries.Herein,it is reported that a multifunctional dendrites-free low-temperature PVA-based gel elec-trolyte by introducing negatively charged polymer carbon quantum dots(QDs)and the organic antifreeze dimethyl sulfoxide(DMSO)into it.The QDs carrying a large number of functional groups on the surface can effectively adsorb Zn^(2+),eliminating the“tip effect”,and inducing the uniform deposition of Zn^(2+)and the formation of a dendrites-free structure.Meanwhile,the solvation structure of adsorbed Zn^(2+)can be controlled by charged groups to reduce the generation of side reactions,thus obtaining high-performance zinc ion batteries.The Zn/polyaniline(PANi)full battery can be stably cycled more than 1000 times at-20℃,and the design of this gel electrolyte can provide good feasibility for safe,stable,and flexible energy storage devices.展开更多
Quantum dot(QD)-based infrared photodetector is a promising technology that can implement current monitoring,imaging and optical communication in the infrared region. However, the photodetection performance of self-po...Quantum dot(QD)-based infrared photodetector is a promising technology that can implement current monitoring,imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction.The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10^(12)Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector(4.66 × 10^(11)Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices.展开更多
In the 9 December 2024 issue of Nature[1],a team of Google engineers reported breakthrough results using“Willow”,their lat-est quantum computing chip(Fig.1).By meeting a milestone“below threshold”reduction in the ...In the 9 December 2024 issue of Nature[1],a team of Google engineers reported breakthrough results using“Willow”,their lat-est quantum computing chip(Fig.1).By meeting a milestone“below threshold”reduction in the rate of errors that plague super-conducting circuit-based quantum computing systems(Fig.2),the work moves the field another step towards its promised super-charged applications,albeit likely still many years away.Areas expected to benefit from quantum computing include,among others,drug discovery,materials science,finance,cybersecurity,and machine learning.展开更多
Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order mo...Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order modes.A structure of mini-array is adopted to improve the heat dissipation capacity and beam quality of BA QCLs.The active region is etched to form a multi-emitter and the channels are filled with In P:Fe,which acts as a lateral heat dissipation channel to improve the lateral heat dissipation efficiency.A device withλ~4.8μm,a peak output power of 122 W at 1.2%duty cycle with a pulse of 1.5μs is obtained in room temperature,with far-field single-lobed distribution.This result allows BA QCLs to obtain high peak power at wider pump pulse widths and higher duty cycle conditions,promotes the application of the mid-infrared laser operating in pulsed mode in th e field of standoff photoacoustic chemical detection,space optical communication,and so on.展开更多
Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachm...Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachment and complex fabrication process introduce surface defects,compromising device stability and efficiency.In this work,we propose a solution-phase ligand exchange(SPLE)method utilizing inorganic ligands to develop stable p-type lead sulfide(PbS)CQD inks for the first time.Various amounts of tin(Ⅱ)iodide(SnI_(2))were mixed with lead halide(PbX_(2);X=I,Br)in the ligand solution.By precisely controlling the SnI_(2)concentration,we regulate the transition of PbS QDs from n-type to p-type.PbS CQDSCs were fabricated using two different HTL approaches:one with 1,2-ethanedithiol(EDT)-passivated QDs via the LbL method(control)and another with inorganic ligand-passivated QD ink(target).The target devices achieved a higher power conversion efficiency(PCE)of 10.93%,compared to 9.83%for the control devices.This improvement is attributed to reduced interfacial defects and enhanced carrier mobility.The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands,paving the way for high-performance and flexible CQD-based optoelectronic devices.展开更多
In this paper, we analyze the enthalpy, enthalpy energy density, thermodynamic volume, and the equation of state of a modified white hole. We obtain new possible mathematical connections with some sectors of Number Th...In this paper, we analyze the enthalpy, enthalpy energy density, thermodynamic volume, and the equation of state of a modified white hole. We obtain new possible mathematical connections with some sectors of Number Theory, Ramanujan Recurring Numbers, DN Constant and String Theory, that enable us to extract the quantum geometrical properties of these thermodynamic equations and the implication to the quantum vacuum spacetime geometry of our early universe as they act as the constraints to the nature of quantum gravity of the universe.展开更多
The no-cloning theorem has sparked considerable interest in achieving high-fidelity approximate quantum cloning.Most of the previous studies mainly focused on the cloning of single particle states,and cloning schemes ...The no-cloning theorem has sparked considerable interest in achieving high-fidelity approximate quantum cloning.Most of the previous studies mainly focused on the cloning of single particle states,and cloning schemes used there are incapable of cloning quantum entangled states in multipartite systems.Few schemes were proposed for cloning multiparticle states,which consume more entanglement resources with loss of qubits,and the fidelity of the cloned state is relatively low.In this paper,cloning schemes for bipartite and tripartite entangled states based on photonic quantum walk and entanglement swapping are proposed.The results show that according to the proposed schemes,two high-fidelity(up to 0.75)cloned states can be obtained with less quantum resource consumption.Because of the simple cloning steps,few quantum resources and high fidelity,these schemes are both efficient and feasible.Moreover,this cloning machine eliminates the need for tracing out cloning machine,thereby minimizing resource waste.展开更多
基金supported by the National Research Foundation of Korea(NRF)through a grant provided by the Korean government(No.NRF-2021R1F1A1063451).
文摘Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)is a highly successful conductive polymer utilized as an electrode material in energy storage units for portable and wearable electronic de-vices.Nevertheless,employing PEDOT:PSS in supercapacitors(SC)in its pristine state presents challenges due to its suboptimal electrochemical performance and operational instability.To surmount these limita-tions,PEDOT:PSS has been integrated with carbon-based materials to form flexible electrodes,which ex-hibit physical and chemical stability during SC operation.We developed a streamlined fabrication process for high-performance SC electrodes composed of PEDOT:PSS and carbon quantum dots(CQDs).The CQDs were synthesized under microwave irradiation,yielding green-and red-light emissions.Through optimiz-ing the ratios of CQDs to PEDOT:PSS,the SC electrodes were prepared using a spray-coating technique,marking a significant improvement in device performance with a high volumetric capacitance(104.10 F cm-3),impressive energy density(19.68 Wh cm^(-3)),and excellent cyclic stability,retaining~85% of its original volumetric capacitance after 15,000 repeated GCD cycles.Moreover,the SCs,when utilized as a flexible substrate,demonstrated the ability to maintain up to~85% of their electrochemical performance even after 3,000 bending cycles(at a bending angle of 60°).These attributes render this hybrid composite an ideal candidate for a lightweight smart energy storage component in portable and wearable electronic technologies.
基金supported by the Major Project for the Integration of ScienceEducation and Industry (Grant No.2025ZDZX02)。
文摘Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.
基金supported by the National Natural Science Foundation of China (Grant Nos.12494604,12393834,12393831,62274014,6223501662335015)the National Key R&D Program of China (Grant No.2024YFA1208900)。
文摘The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.
基金supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos.XDB28000000 and XDB0460000)the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2021ZD0302600)the National Key Research and Development Program of China(Grant No.2024YFA1409002)。
文摘The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.
基金supported by the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2024ZD0302502 for WZ)the National Natural Science Foundation of China(Grant No.92365210 for WZ)+1 种基金Tsinghua Initiative Scientific Research Program (for WZ)the project of Tsinghua University-Zhuhai Huafa Industrial Share Company Joint Institute for Architecture Optoelectronic Technologies (JIAOT,for YH)。
文摘To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.This source is based on spontaneous four-wave mixing(SFWM)in a piece of shallow-ridge silicon waveguide.Theoretical analysis shows that the waveguide dispersion could be tailored by adjusting the ridge width,enabling broadband photon pair generation by SFWM across C band and O band.The spontaneous Raman scattering(SpRS)in silicon waveguides is also investigated experimentally.It shows that there are two regions in the spectrum of generated photons from SpRS,which could be used to achieve cross-band photon pair generation.A chip of shallow-ridge silicon waveguide samples with different ridge widths has been fabricated,through which cross-band photon pair generation is demonstrated experimentally.The experimental results show that the source can be achieved using dispersion-optimized shallow-ridge silicon waveguides.This cross-band quantum light source provides a way to develop new fiber-based quantum communication functions utilizing both C band and O band and extends applications of quantum networks.
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
文摘The rapid recombination of photogenerated carriers poses a significant limitation on the use of CdS quantum dots(QDs)in photocatalysis.Herein,the construction of a novel S-scheme heterojunction between cubic-phase CdS QDs and hollow nanotube In_(2)O_(3)is successfully achieved using an electrostatic self-assembly method.Under visible light irradiation,all CdS-In_(2)O_(3)composites exhibit higher hydrogen evolution efficiency compared to pure CdS QDs.Notably,the photocatalytic H_(2)evolution rate of the optimal CdS-7%In_(2)O_(3)composite is determined to be 2258.59μmol g^(−1)h^(−1),approximately 12.3 times higher than that of pure CdS.The cyclic test indicates that the CdS-In_(2)O_(3)composite maintains considerable activity even after 5 cycles,indicating its excellent stability.In situ X-ray photoelectron spectroscopy and density functional theory calculations confirm that carrier migration in CdS-In_(2)O_(3)composites adheres to a typical S-scheme heterojunction mechanism.Additionally,a series of characterizations demonstrate that the formation of S-scheme heterojunctions between In_(2)O_(3)and CdS inhibits charge recombination and accelerates the separation and migration of photogenerated carriers in the CdS QDs,thus achieving enhanced photocatalytic performance.This work elucidates the pivotal role of S-scheme heterojunctions in photocatalytic H_(2)production and offers novel insights into the construction of effective composite photocatalysts.
基金Project supported by the Open Fund of Anhui Key Laboratory of Mine Intelligent Equipment and Technology (Grant No. ZKSYS202204)the Talent Introduction Fund of Anhui University of Science and Technology (Grant No. 2021yjrc34)the Scientific Research Fund of Anhui Provincial Education Department (Grant No. KJ2020A0301)。
文摘Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum communication, and utilize the logical relationship between the measurements of each node to derive the unitary operation performed by the end node. The hierarchical simultaneous entanglement switching(HSES) method is adopted, resulting in a significant reduction in the consumption of classical information compared to multi-hop quantum teleportation(QT)based on general simultaneous entanglement switching(SES). In addition, the proposed protocol is simulated on the IBM Quantum Experiment platform(IBM QE). Then, the data obtained from the experiment are analyzed using quantum state tomography, which verifies the protocol's good fidelity and accuracy. Finally, by calculating fidelity, we analyze the impact of four different types of noise(phase-damping, amplitude-damping, phase-flip and bit-flip) in this protocol.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金supported by the National Natural Science Foundation of China(62374142,12175189 and 11904302)External Cooperation Program of Fujian(2022I0004)+1 种基金Fundamental Research Funds for the Central Universities(20720190005 and 20720220085)Major Science and Technology Project of Xiamen in China(3502Z20191015).
文摘The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and mixed reality applications.Alongside the controlled synthesis of high-performance QDs,a reliable QD patterning technology is crucial in overcoming this challenge.Among the various methods available,photolithography-based patterning technologies show great potentials in producing ultra-fine QD patterns at micron scale.This review article presents the recent advancements in the field of QD patterning using photolithography techniques and explores their applications in micro-display technology.Firstly,we discuss QD patterning through photolithography techniques employing photoresist(PR),which falls into two categories:PRassisted photolithography and photolithography of QDPR.Subsequently,direct photolithography techniques based on photo-induced crosslinking of photosensitive groups and photo-induced ligand cleavage mechanisms are thoroughly reviewed.Meanwhile,we assess the performance of QD arrays fabricated using these photolithography techniques and their integration into QD light emitting diode display devices as well as color conversionbased micro light emitting diode display devices.Lastly,we summarize the most recent developments in this field and outline future prospects.
基金supported by the National Natural Science Foundation of China(Nos.62374142 and 22005255)Fundamental Research Funds for the Central Universities(Nos.20720220085 and 20720240064)+2 种基金External Cooperation Program of Fujian(No.2022I0004)Major Science and Technology Project of Xiamen in China(No.3502Z20191015)Xiamen Natural Science Foundation Youth Project(No.3502Z202471002)。
文摘Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.
基金financial support from the Doctoral Foundation of Henan University of Engineering(No.D2022025)National Natural Science Foundation of China(No.U2004162)+1 种基金National Natural Science Foundation of China(No.52302138)Key Project for Science and Technology Development of Henan Province(No.232102320221)。
文摘With the rapid development of electric vehicles,hybrid electric vehicles and smart grids,people's demand for large-scale energy storage devices is increasingly intense.As a new type of secondary battery,potassium ion battery is promising to replace the lithium-ion battery in the field of large-scale energy storage by virtue of its low price and environmental friendliness.At present,the research on the anode materials of potassium ion batteries mainly focuses on carbon materials and the design of various nanostructured metal-based materials.Problems such as poor rate performance and inferior cycle life caused by electrode structure comminution during charge and discharge have not been solved.Quantum dots/nanodots materials are a new type of nanomaterials that can effectively improve the utilization of electrode materials and reduce production costs.In addition,quantum dots/nanodots materials can enhance the electrode reaction kinetics,reduce the stress generated in cycling,and effectively alleviate the agglomeration and crushing of electrode materials.In this review,we will systematically introduce the synthesis methods,K+storage properties and K+storage mechanisms of carbon quantum dots and carbon-based transition metal compound quantum dots composites.This review will have significant references for potassium ion battery researchers.
基金supported by the National Natural Science Foundation of China Project(No.52163001)the Guizhou Minzu University Research Platform Grant(No.GZMUGCZX[2021]01)+2 种基金the Guizhou Provincial Science and Technology Program Project Grant(Qiankehe Platform Talents-CXTD[2021]005,Qiankehe Platform Talents-GCC[2022]010-1,Qiankehe Fuqi[2023]001)the Central Guided Local Science and Technology Development Funds Project(Qiankehe Zhong Yindi[2023]035)the Doctor Startup Fund of Guizhou Minzu University(Grant No.GZMUZK[2024]QD77).
文摘Aqueous zinc ion batteries have received widespread attention.However,the growth of zinc dendrites and hydrogen evolution reaction generation seriously hinder the practical application of zinc ion bat-teries.Herein,it is reported that a multifunctional dendrites-free low-temperature PVA-based gel elec-trolyte by introducing negatively charged polymer carbon quantum dots(QDs)and the organic antifreeze dimethyl sulfoxide(DMSO)into it.The QDs carrying a large number of functional groups on the surface can effectively adsorb Zn^(2+),eliminating the“tip effect”,and inducing the uniform deposition of Zn^(2+)and the formation of a dendrites-free structure.Meanwhile,the solvation structure of adsorbed Zn^(2+)can be controlled by charged groups to reduce the generation of side reactions,thus obtaining high-performance zinc ion batteries.The Zn/polyaniline(PANi)full battery can be stably cycled more than 1000 times at-20℃,and the design of this gel electrolyte can provide good feasibility for safe,stable,and flexible energy storage devices.
基金supported by the National Natural Science Foundation of China (No. 62204079)the Science and Technology Development Project of Henan Province (Nos.202300410048, 202300410057)+2 种基金the China Postdoctoral Science Foundation (No. 2022M711037)the Intelligence Introduction Plan of Henan Province in 2021 (No. CXJD2021008)Henan University Fund。
文摘Quantum dot(QD)-based infrared photodetector is a promising technology that can implement current monitoring,imaging and optical communication in the infrared region. However, the photodetection performance of self-powered QD devices is still limited by their unfavorable charge carrier dynamics due to their intrinsically discrete charge carrier transport process. Herein, we strategically constructed semiconducting matrix in QD film to achieve efficient charge transfer and extraction.The p-type semiconducting CuSCN was selected as energy-aligned matrix to match the n-type colloidal PbS QDs that was used as proof-of-concept. Note that the PbS QD/CuSCN matrix not only enables efficient charge carrier separation and transfer at nano-interfaces but also provides continuous charge carrier transport pathways that are different from the hoping process in neat QD film, resulting in improved charge mobility and derived collection efficiency. As a result, the target structure delivers high specific detectivity of 4.38 × 10^(12)Jones and responsivity of 782 mA/W at 808 nm, which is superior than that of the PbS QD-only photodetector(4.66 × 10^(11)Jones and 338 mA/W). This work provides a new structure candidate for efficient colloidal QD based optoelectronic devices.
文摘In the 9 December 2024 issue of Nature[1],a team of Google engineers reported breakthrough results using“Willow”,their lat-est quantum computing chip(Fig.1).By meeting a milestone“below threshold”reduction in the rate of errors that plague super-conducting circuit-based quantum computing systems(Fig.2),the work moves the field another step towards its promised super-charged applications,albeit likely still many years away.Areas expected to benefit from quantum computing include,among others,drug discovery,materials science,finance,cybersecurity,and machine learning.
文摘Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order modes.A structure of mini-array is adopted to improve the heat dissipation capacity and beam quality of BA QCLs.The active region is etched to form a multi-emitter and the channels are filled with In P:Fe,which acts as a lateral heat dissipation channel to improve the lateral heat dissipation efficiency.A device withλ~4.8μm,a peak output power of 122 W at 1.2%duty cycle with a pulse of 1.5μs is obtained in room temperature,with far-field single-lobed distribution.This result allows BA QCLs to obtain high peak power at wider pump pulse widths and higher duty cycle conditions,promotes the application of the mid-infrared laser operating in pulsed mode in th e field of standoff photoacoustic chemical detection,space optical communication,and so on.
基金supported by MEXT KAKENHI Grant(24K01295,26286013).
文摘Traditional p-type colloidal quantum dot(CQD)hole transport layers(HTLs)used in CQD solar cells(CQDSCs)are commonly based on organic ligands exchange and the layer-by-layer(LbL)technique.Nonetheless,the ligand detachment and complex fabrication process introduce surface defects,compromising device stability and efficiency.In this work,we propose a solution-phase ligand exchange(SPLE)method utilizing inorganic ligands to develop stable p-type lead sulfide(PbS)CQD inks for the first time.Various amounts of tin(Ⅱ)iodide(SnI_(2))were mixed with lead halide(PbX_(2);X=I,Br)in the ligand solution.By precisely controlling the SnI_(2)concentration,we regulate the transition of PbS QDs from n-type to p-type.PbS CQDSCs were fabricated using two different HTL approaches:one with 1,2-ethanedithiol(EDT)-passivated QDs via the LbL method(control)and another with inorganic ligand-passivated QD ink(target).The target devices achieved a higher power conversion efficiency(PCE)of 10.93%,compared to 9.83%for the control devices.This improvement is attributed to reduced interfacial defects and enhanced carrier mobility.The proposed technique offers an efficient pathway for producing stable p-type PbS CQD inks using inorganic ligands,paving the way for high-performance and flexible CQD-based optoelectronic devices.
文摘In this paper, we analyze the enthalpy, enthalpy energy density, thermodynamic volume, and the equation of state of a modified white hole. We obtain new possible mathematical connections with some sectors of Number Theory, Ramanujan Recurring Numbers, DN Constant and String Theory, that enable us to extract the quantum geometrical properties of these thermodynamic equations and the implication to the quantum vacuum spacetime geometry of our early universe as they act as the constraints to the nature of quantum gravity of the universe.
文摘The no-cloning theorem has sparked considerable interest in achieving high-fidelity approximate quantum cloning.Most of the previous studies mainly focused on the cloning of single particle states,and cloning schemes used there are incapable of cloning quantum entangled states in multipartite systems.Few schemes were proposed for cloning multiparticle states,which consume more entanglement resources with loss of qubits,and the fidelity of the cloned state is relatively low.In this paper,cloning schemes for bipartite and tripartite entangled states based on photonic quantum walk and entanglement swapping are proposed.The results show that according to the proposed schemes,two high-fidelity(up to 0.75)cloned states can be obtained with less quantum resource consumption.Because of the simple cloning steps,few quantum resources and high fidelity,these schemes are both efficient and feasible.Moreover,this cloning machine eliminates the need for tracing out cloning machine,thereby minimizing resource waste.
