Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and v...Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.展开更多
The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon ...The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.展开更多
The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges be...The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.展开更多
InP quantum dots(QDs)have been a major building block of modern display technology due to their high photoluminescence quantum yield(PLQY)in the visible spectrum,superior stability,and eco-friendly composition.However...InP quantum dots(QDs)have been a major building block of modern display technology due to their high photoluminescence quantum yield(PLQY)in the visible spectrum,superior stability,and eco-friendly composition.However,their applications at short-wave infrared(SWIR)have been hindered by their low efficiency.Here,we report the synthesis of efficient and SWIR-emitting InP QDs by precisely controlling the InP core nucleation using a low-cost ammonia phosphorus precursor,while avoiding size-limiting ZnCl_(2) for effective copper doping.Subsequent epitaxial growth of a lattice-matched ZnSe/ZnS multishell enhanced the QD sphericity and surface smoothness and yielded a record PLQY of 66% with an emission peak at 960 nm.When QDs were integrated as the high-refractive-index luminescent core of a liquid waveguide-based luminescent solar concentrator(LSC),the device achieved an optical efficiency of 7.36%.This performance arises from their high PLQY,spectral alignment with the responsivity peak of silicon solar cells,and the optimized core/cladding waveguide structure.These results highlight the potential of InP QDs as a promising nanomaterial for SWIR emission and applications.展开更多
To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.T...To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.This source is based on spontaneous four-wave mixing(SFWM)in a piece of shallow-ridge silicon waveguide.Theoretical analysis shows that the waveguide dispersion could be tailored by adjusting the ridge width,enabling broadband photon pair generation by SFWM across C band and O band.The spontaneous Raman scattering(SpRS)in silicon waveguides is also investigated experimentally.It shows that there are two regions in the spectrum of generated photons from SpRS,which could be used to achieve cross-band photon pair generation.A chip of shallow-ridge silicon waveguide samples with different ridge widths has been fabricated,through which cross-band photon pair generation is demonstrated experimentally.The experimental results show that the source can be achieved using dispersion-optimized shallow-ridge silicon waveguides.This cross-band quantum light source provides a way to develop new fiber-based quantum communication functions utilizing both C band and O band and extends applications of quantum networks.展开更多
As new-generation solar cells,quantum dot-sensitized solar cells(QDSCs)have the outstanding advantages of low cost and high theoretical efficiency;thus,such cells receive extensive research attention.Their power conve...As new-generation solar cells,quantum dot-sensitized solar cells(QDSCs)have the outstanding advantages of low cost and high theoretical efficiency;thus,such cells receive extensive research attention.Their power conversion efficiency(PCE)has increased from 5%to over 15%in the past decade.However,compared with the theoretical efficiency(44%),the PCE of QDSCs still needs further improvement.The low loading amount of quantum dots(QDs)is a key factor limiting the improvement of cell efficiency.The loading amount of QDs on the surface of the substrate film is important for the performance of QDSCs,which directly affects the light-harvesting ability of the device and interfacial charge recombination.The optimization of QD deposition and the improvement of the loading amount are important driving forces for the rapid development of QDSCs in recent years and a key breakthrough in future development.In this paper,the research progress of QD deposition on the surface of substrate films in QDSCs was reviewed.In addition,the main deposition methods and their advantages and disadvantages were discussed,and future research on the further increase in loading amount was proposed.展开更多
An efficient photocatalyst was fabricated by assembling quantum dots （QDs） onto one-dimensionally-ordered ZnO nanorods, and the photocatalytic properties for Methyl Orange degradation were investigated by scanning e...An efficient photocatalyst was fabricated by assembling quantum dots （QDs） onto one-dimensionally-ordered ZnO nanorods, and the photocatalytic properties for Methyl Orange degradation were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV-Vis-NIR absorption spectroscopy and photoluminescence. The results indicate that the catalyst with assembled QDs is more favorable for the degradation than the pristine ZnO nanorods. The QDs with core-shell structure lower the photocatalytic ability due to the higher carder transport barrier of the ZnS shell layer. Besides its degradation efficiency, the photocatalyst has several advantages given that the one-dimensionally-ordered ZnO nanorods have been grown directly on indium tin oxide substrates. The article provides a new method to design an effective and easily recyclable photocatalyst.展开更多
To pursue electron-generation stability with no sacrifice of photovoltaic performance has been a persistent objective for all kinds of solar cells. Here, we demonstrate the experimental realization of this objective b...To pursue electron-generation stability with no sacrifice of photovoltaic performance has been a persistent objective for all kinds of solar cells. Here, we demonstrate the experimental realization of this objective by quasi-solid-state quantum dot-sensitized solar cells from a series of conducting gel electrolytes composed of polyacrylamide（PAAm） matrix and conductive polymers [polyaniline（PANi）, polypyrrole（PPy） or polythiophene（PT）]. The reduction of Sx2- occurred in both interface and three dimensional framework of conducting gel electrolyte as a result of the electrical conduction of PANi, PPy and PT toward refluxed electrons from external circuit to Pt electrode. The resulting solar cells can yield the solarto-electrical conversion efficiency of 2.33%, 2.25% and 1.80% for PANi, PPy and PT based gel electrolytes,respectively. Those solar cells possessed much higher efficiency than that of 1.74% based on pure PAAm gel electrolyte owing to the enhanced kinetics for Sx2- ？ S2- conversion. More importantly, the stability of quasi-solid-state solar cell is significantly advanced, arising from the localization of liquid electrolyte into the three dimensional framework and therefore reduced leakage and volatilization.展开更多
Power conversion efficiency(PCE) of quantum dot-sensitized solar cells(QDSSCs) was boosted in a TiO_2 composite film(TCSF) with delicate design in structure where TiO_2 hierarchical porous film(THPF) situated on the t...Power conversion efficiency(PCE) of quantum dot-sensitized solar cells(QDSSCs) was boosted in a TiO_2 composite film(TCSF) with delicate design in structure where TiO_2 hierarchical porous film(THPF) situated on the top of TiO_2 nanorod arrays film(TNAF). In this case, TNAF could supply efficient scattering centers for high light harvesting and direct electrical pathways for fast electron transfer while the THPF could offer porous channels for loading high quantity of previously synthetized quantum dots(QDs) and facilitate the penetration of electrolyte. Meanwhile, in this specific configuration, the presence of anatase–rutile heterojunction at the interface could help the rutile TNAF layer to efficiently collect photo-injected electrons from the anatase THPF layer thus suppressing the recombination of electrons and holes in electrolyte. The results showed that the PCE of QDSSC based on the TNAF photoanode was about 1.4-fold higher(η = 3.05%, J_(sc)= 15.86 m A cm^(-2), V_(oc)= 0.602 V, FF = 0.319) than that of device based on pure THPF(η = 2.20%, J_(sc)= 13.82 m A cm^(-2), V_(oc)= 0.572 V, FF = 0.278).展开更多
The modification of polysulfide electrolyte with additives has been demonstrated as an effective way to improve the photovoltaic performance of quantum dot-sensitized solar cells(QDSCs). Most of these additives can in...The modification of polysulfide electrolyte with additives has been demonstrated as an effective way to improve the photovoltaic performance of quantum dot-sensitized solar cells(QDSCs). Most of these additives can inhibit the charge recombination processes at photoanode/electrolyte interface and favor the improvement of V oc of cell devices. Herein, we showed that the incorporation of elemental selenium(Se) in polysulfide electrolyte to form polyselenosulfide species can notably improve the performance of QDSCs. Unlike previous reports, we present here an integrated investigation of the effects of polyselenosulfide species in polysulfide electrolyte on the photovoltaic performance of QDSCs from both of the photoanode and counter electrode(CE) aspects. Electrochemical impedance spectroscopy(IS) and opencircuit voltage-decay(OCVD) measurements demonstrated that the introduction of Se into polysulfide electrolyte can not only retard charge recombination at photoanode/electrolyte interface, but also reduce the charge transfer resistance at CE/electrolyte interface, resulting in the improvement of J sc and FF values. Consequently, the average efficiency of Zn-Cu-In-Se QDSCs was improved from 9.26% to 9.78% under AM 1.5 G full one sun illumination.展开更多
To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer,a rutile TiO2 nanorod array with a length of 200 n...To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer,a rutile TiO2 nanorod array with a length of 200 nm,a diameter of 20 nm and an areal density of 720 ram 2 was successfully prepared using a hydrothermal method with an aqueous-grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170℃for 75 min.PbS quantum dots were deposited by a spin coating-assisted successive ionic layer adsorption and reaction(spin-SILAR),and all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells were fabricated using spiro-OMeTAD as electrolytes.The results revealed that the average crystal size of PbS quantum dots was-78 nm using Pb(NO3)2 as the lead source and remain unchanged with the increase of the number of spin-SILAR cycles.The all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells with spin-SILAR cycle numbers of 20,30 and 40 achieved the photoelectric conversion efficiencies of 3.74%,4.12%and 3.11%,respectively,under AM 1.5 G illumination(100 mW/cm2).展开更多
Photoanodic properties greatly determine the overall performance of quantum-dot-sensitized solar cells（QDSCs）. In the present report, the microdynamic behaviors of carriers in the nanocomposite thin-film, a Zn Se QD...Photoanodic properties greatly determine the overall performance of quantum-dot-sensitized solar cells（QDSCs）. In the present report, the microdynamic behaviors of carriers in the nanocomposite thin-film, a Zn Se QD-sensitized mesoporous La-doped nano-TiO2 thin-film, as a potential candidate for photoanode, are probed via nanosecond transient photovoltaic（TPV） spectroscopy. The results confirm that the L-Cys ligand has a dual function serving as a stabilizer and molecular linker. Large quantities of interface states are located at the energy level with a photoelectric threshold of1.58 eV and a quantum well（QW） depth of 0.67 eV. This QW depth is approximately 0.14 eV deeper than the depth of QW buried in the Zn Se QDs, and a deeper QW results in a higher quantum confinement energy. A strong quantum confinement effect of the interface state may be responsible for the excellent TPV characteristics of the photoanode. For example, the peak intensity of the TPV response of the QD-sensitized thin-film lasts a long time, from 9.40 × 10^（-7） s to 2.96 × 10^（-4） s,and the end time of the PTV response of the QD-sensitized thin-film is extended by approximately an order of magnitude compared with those of the TiO2 substrate and the QDs. The TPV characteristics of the QD-sensitized thin-film change from p-type to n-type for the QDs before and after sensitizing. These properties strongly depend on the extended diffusion length of the photogenerated carries and the reduced recombination rate of photogenerated electron-hole pairs, resulting in prolonged carrier lifetime and an increased level of electron injection into the TiO2 thin-film substrate.展开更多
Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yiel...Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.展开更多
Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum...Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum communication, and utilize the logical relationship between the measurements of each node to derive the unitary operation performed by the end node. The hierarchical simultaneous entanglement switching(HSES) method is adopted, resulting in a significant reduction in the consumption of classical information compared to multi-hop quantum teleportation(QT)based on general simultaneous entanglement switching(SES). In addition, the proposed protocol is simulated on the IBM Quantum Experiment platform(IBM QE). Then, the data obtained from the experiment are analyzed using quantum state tomography, which verifies the protocol's good fidelity and accuracy. Finally, by calculating fidelity, we analyze the impact of four different types of noise(phase-damping, amplitude-damping, phase-flip and bit-flip) in this protocol.展开更多
The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investiga...The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.展开更多
The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and...The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and mixed reality applications.Alongside the controlled synthesis of high-performance QDs,a reliable QD patterning technology is crucial in overcoming this challenge.Among the various methods available,photolithography-based patterning technologies show great potentials in producing ultra-fine QD patterns at micron scale.This review article presents the recent advancements in the field of QD patterning using photolithography techniques and explores their applications in micro-display technology.Firstly,we discuss QD patterning through photolithography techniques employing photoresist(PR),which falls into two categories:PRassisted photolithography and photolithography of QDPR.Subsequently,direct photolithography techniques based on photo-induced crosslinking of photosensitive groups and photo-induced ligand cleavage mechanisms are thoroughly reviewed.Meanwhile,we assess the performance of QD arrays fabricated using these photolithography techniques and their integration into QD light emitting diode display devices as well as color conversionbased micro light emitting diode display devices.Lastly,we summarize the most recent developments in this field and outline future prospects.展开更多
Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order mo...Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order modes.A structure of mini-array is adopted to improve the heat dissipation capacity and beam quality of BA QCLs.The active region is etched to form a multi-emitter and the channels are filled with In P:Fe,which acts as a lateral heat dissipation channel to improve the lateral heat dissipation efficiency.A device withλ~4.8μm,a peak output power of 122 W at 1.2%duty cycle with a pulse of 1.5μs is obtained in room temperature,with far-field single-lobed distribution.This result allows BA QCLs to obtain high peak power at wider pump pulse widths and higher duty cycle conditions,promotes the application of the mid-infrared laser operating in pulsed mode in th e field of standoff photoacoustic chemical detection,space optical communication,and so on.展开更多
Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectr...Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.展开更多
基金supported by the Major Project for the Integration of ScienceEducation and Industry (Grant No.2025ZDZX02)。
文摘Classical computation of electronic properties in large-scale materials remains challenging.Quantum computation has the potential to offer advantages in memory footprint and computational scaling.However,general and viable quantum algorithms for simulating large-scale materials are still limited.We propose and implement random-state quantum algorithms to calculate electronic-structure properties of real materials.Using a random state circuit on a small number of qubits,we employ real-time evolution with first-order Trotter decomposition and Hadamard test to obtain electronic density of states,and we develop a modified quantum phase estimation algorithm to calculate real-space local density of states via direct quantum measurements.Furthermore,we validate these algorithms by numerically computing the density of states and spatial distributions of electronic states in graphene,twisted bilayer graphene quasicrystals,and fractal lattices,covering system sizes from hundreds to thousands of atoms.Our results manifest that the random-state quantum algorithms provide a general and qubit-efficient route to scalable simulations of electronic properties in large-scale periodic and aperiodic materials.
基金supported by the National Natural Science Foundation of China (Grant Nos.12494604,12393834,12393831,62274014,6223501662335015)the National Key R&D Program of China (Grant No.2024YFA1208900)。
文摘The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology.Although significant advancements have been witnessed in recent years for single-photon sources in the near-infrared band(λ∼700–1000 nm),several challenges have yet to be addressed for ideal single-photon emission at the telecommunication band.In this study,we present a droplet-epitaxy strategy for O-band to C-band single-photon source-based semiconductor quantum dots(QDs)using metal-organic vaporphase epitaxy(MOVPE).By investigating the growth conditions of the epitaxial process,we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of λ∼1200–1600 nm.The morphological and optical properties of the samples were characterized using atomic force microscopy and microphotoluminescence spectroscopy.The recorded single-photon purity of a plain QD structure reaches g^((2))(0)=0.16,with a radiative recombination lifetime as short as 1.5 ns.This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands,offering significant prospects for quantum network applications.
基金supported by the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos.XDB28000000 and XDB0460000)the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2021ZD0302600)the National Key Research and Development Program of China(Grant No.2024YFA1409002)。
文摘The hybridization gap in strained-layer InAs/In_(x)Ga_(1−x) Sb quantum spin Hall insulators(QSHIs)is significantly enhanced compared to binary InAs/GaSb QSHI structures,where the typical indium composition,x,ranges between 0.2 and 0.4.This enhancement prompts a critical question:to what extent can quantum wells(QWs)be strained while still preserving the fundamental QSHI phase?In this study,we demonstrate the controlled molecular beam epitaxial growth of highly strained-layer QWs with an indium composition of x=0.5.These structures possess a substantial compressive strain within the In_(0.5)Ga_(0.5)Sb QW.Detailed crystal structure analyses confirm the exceptional quality of the resulting epitaxial films,indicating coherent lattice structures and the absence of visible dislocations.Transport measurements further reveal that the QSHI phase in InAs/In_(0.5)Ga_(0.5)Sb QWs is robust and protected by time-reversal symmetry.Notably,the edge states in these systems exhibit giant magnetoresistance when subjected to a modest perpendicular magnetic field.This behavior is in agreement with the𝑍2 topological property predicted by the Bernevig–Hughes–Zhang model,confirming the preservation of topologically protected edge transport in the presence of enhanced bulk strain.
文摘InP quantum dots(QDs)have been a major building block of modern display technology due to their high photoluminescence quantum yield(PLQY)in the visible spectrum,superior stability,and eco-friendly composition.However,their applications at short-wave infrared(SWIR)have been hindered by their low efficiency.Here,we report the synthesis of efficient and SWIR-emitting InP QDs by precisely controlling the InP core nucleation using a low-cost ammonia phosphorus precursor,while avoiding size-limiting ZnCl_(2) for effective copper doping.Subsequent epitaxial growth of a lattice-matched ZnSe/ZnS multishell enhanced the QD sphericity and surface smoothness and yielded a record PLQY of 66% with an emission peak at 960 nm.When QDs were integrated as the high-refractive-index luminescent core of a liquid waveguide-based luminescent solar concentrator(LSC),the device achieved an optical efficiency of 7.36%.This performance arises from their high PLQY,spectral alignment with the responsivity peak of silicon solar cells,and the optimized core/cladding waveguide structure.These results highlight the potential of InP QDs as a promising nanomaterial for SWIR emission and applications.
基金supported by the Quantum Science and Technology-National Science and Technology Major Project (Grant No.2024ZD0302502 for WZ)the National Natural Science Foundation of China(Grant No.92365210 for WZ)+1 种基金Tsinghua Initiative Scientific Research Program (for WZ)the project of Tsinghua University-Zhuhai Huafa Industrial Share Company Joint Institute for Architecture Optoelectronic Technologies (JIAOT,for YH)。
文摘To fully utilize the resources provided by optical fiber networks,a cross-band quantum light source generating photon pairs,where one photon in a pair is at C band and the other is at O band,is proposed in this work.This source is based on spontaneous four-wave mixing(SFWM)in a piece of shallow-ridge silicon waveguide.Theoretical analysis shows that the waveguide dispersion could be tailored by adjusting the ridge width,enabling broadband photon pair generation by SFWM across C band and O band.The spontaneous Raman scattering(SpRS)in silicon waveguides is also investigated experimentally.It shows that there are two regions in the spectrum of generated photons from SpRS,which could be used to achieve cross-band photon pair generation.A chip of shallow-ridge silicon waveguide samples with different ridge widths has been fabricated,through which cross-band photon pair generation is demonstrated experimentally.The experimental results show that the source can be achieved using dispersion-optimized shallow-ridge silicon waveguides.This cross-band quantum light source provides a way to develop new fiber-based quantum communication functions utilizing both C band and O band and extends applications of quantum networks.
基金financial support by the Laboratory of Lingnan Modern Agriculture Project(NZ2021030)the National Natural Science Foundation of China(Nos.22122805,U21A20310,51732004,22075090,and 21975083)。
文摘As new-generation solar cells,quantum dot-sensitized solar cells(QDSCs)have the outstanding advantages of low cost and high theoretical efficiency;thus,such cells receive extensive research attention.Their power conversion efficiency(PCE)has increased from 5%to over 15%in the past decade.However,compared with the theoretical efficiency(44%),the PCE of QDSCs still needs further improvement.The low loading amount of quantum dots(QDs)is a key factor limiting the improvement of cell efficiency.The loading amount of QDs on the surface of the substrate film is important for the performance of QDSCs,which directly affects the light-harvesting ability of the device and interfacial charge recombination.The optimization of QD deposition and the improvement of the loading amount are important driving forces for the rapid development of QDSCs in recent years and a key breakthrough in future development.In this paper,the research progress of QD deposition on the surface of substrate films in QDSCs was reviewed.In addition,the main deposition methods and their advantages and disadvantages were discussed,and future research on the further increase in loading amount was proposed.
基金supported by the National Natural Science Foundation of China(No.61106059)the Encourage-ment Foundation for Excellent Middleaged and Young Scientists of Shandong Province(No.BS2011NJ003+1 种基金BS2012CL005)the Science-Technology Program of Higher Education Institutions of Shandong Province(No.J11LA10)
文摘An efficient photocatalyst was fabricated by assembling quantum dots （QDs） onto one-dimensionally-ordered ZnO nanorods, and the photocatalytic properties for Methyl Orange degradation were investigated by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, UV-Vis-NIR absorption spectroscopy and photoluminescence. The results indicate that the catalyst with assembled QDs is more favorable for the degradation than the pristine ZnO nanorods. The QDs with core-shell structure lower the photocatalytic ability due to the higher carder transport barrier of the ZnS shell layer. Besides its degradation efficiency, the photocatalyst has several advantages given that the one-dimensionally-ordered ZnO nanorods have been grown directly on indium tin oxide substrates. The article provides a new method to design an effective and easily recyclable photocatalyst.
基金financial supports from the National Natural Science Foundation of China (21503202, 61604143 and 61774139)Yunnan Provincial Natural Science Foundation (Grant No. 2017FA024)
文摘To pursue electron-generation stability with no sacrifice of photovoltaic performance has been a persistent objective for all kinds of solar cells. Here, we demonstrate the experimental realization of this objective by quasi-solid-state quantum dot-sensitized solar cells from a series of conducting gel electrolytes composed of polyacrylamide（PAAm） matrix and conductive polymers [polyaniline（PANi）, polypyrrole（PPy） or polythiophene（PT）]. The reduction of Sx2- occurred in both interface and three dimensional framework of conducting gel electrolyte as a result of the electrical conduction of PANi, PPy and PT toward refluxed electrons from external circuit to Pt electrode. The resulting solar cells can yield the solarto-electrical conversion efficiency of 2.33%, 2.25% and 1.80% for PANi, PPy and PT based gel electrolytes,respectively. Those solar cells possessed much higher efficiency than that of 1.74% based on pure PAAm gel electrolyte owing to the enhanced kinetics for Sx2- ？ S2- conversion. More importantly, the stability of quasi-solid-state solar cell is significantly advanced, arising from the localization of liquid electrolyte into the three dimensional framework and therefore reduced leakage and volatilization.
基金financially supported by the China Postdoctoral Science Foundation(2015M572210,2016M602376)the National Natural Science Foundation of China(61604110)+1 种基金the Hubei Natural Science Foundation of China(2017CFB291)the Foundation of Wuhan University of Science and Technology(2016XZ002)
文摘Power conversion efficiency(PCE) of quantum dot-sensitized solar cells(QDSSCs) was boosted in a TiO_2 composite film(TCSF) with delicate design in structure where TiO_2 hierarchical porous film(THPF) situated on the top of TiO_2 nanorod arrays film(TNAF). In this case, TNAF could supply efficient scattering centers for high light harvesting and direct electrical pathways for fast electron transfer while the THPF could offer porous channels for loading high quantity of previously synthetized quantum dots(QDs) and facilitate the penetration of electrolyte. Meanwhile, in this specific configuration, the presence of anatase–rutile heterojunction at the interface could help the rutile TNAF layer to efficiently collect photo-injected electrons from the anatase THPF layer thus suppressing the recombination of electrons and holes in electrolyte. The results showed that the PCE of QDSSC based on the TNAF photoanode was about 1.4-fold higher(η = 3.05%, J_(sc)= 15.86 m A cm^(-2), V_(oc)= 0.602 V, FF = 0.319) than that of device based on pure THPF(η = 2.20%, J_(sc)= 13.82 m A cm^(-2), V_(oc)= 0.572 V, FF = 0.278).
基金supported by the National Natural Science Foundation of China (NFSC nos. 51732004 , 91433106 , 21703071 , 21805093)
文摘The modification of polysulfide electrolyte with additives has been demonstrated as an effective way to improve the photovoltaic performance of quantum dot-sensitized solar cells(QDSCs). Most of these additives can inhibit the charge recombination processes at photoanode/electrolyte interface and favor the improvement of V oc of cell devices. Herein, we showed that the incorporation of elemental selenium(Se) in polysulfide electrolyte to form polyselenosulfide species can notably improve the performance of QDSCs. Unlike previous reports, we present here an integrated investigation of the effects of polyselenosulfide species in polysulfide electrolyte on the photovoltaic performance of QDSCs from both of the photoanode and counter electrode(CE) aspects. Electrochemical impedance spectroscopy(IS) and opencircuit voltage-decay(OCVD) measurements demonstrated that the introduction of Se into polysulfide electrolyte can not only retard charge recombination at photoanode/electrolyte interface, but also reduce the charge transfer resistance at CE/electrolyte interface, resulting in the improvement of J sc and FF values. Consequently, the average efficiency of Zn-Cu-In-Se QDSCs was improved from 9.26% to 9.78% under AM 1.5 G full one sun illumination.
基金supported by the National Natural Science Foundation of China(51272061,51472071)
文摘To ensure the infiltration of spiro-OMeTAD into the quantum dot-sensitized photoanode and to consider the limit of the hole diffusion length in the spiro-OMeTAD layer,a rutile TiO2 nanorod array with a length of 200 nm,a diameter of 20 nm and an areal density of 720 ram 2 was successfully prepared using a hydrothermal method with an aqueous-grown solution of 38 mM titanium isopropoxide and 6 M hydrochloric acid at 170℃for 75 min.PbS quantum dots were deposited by a spin coating-assisted successive ionic layer adsorption and reaction(spin-SILAR),and all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells were fabricated using spiro-OMeTAD as electrolytes.The results revealed that the average crystal size of PbS quantum dots was-78 nm using Pb(NO3)2 as the lead source and remain unchanged with the increase of the number of spin-SILAR cycles.The all solid-state PbS quantum dot-sensitized TiO2 nanorod array solar cells with spin-SILAR cycle numbers of 20,30 and 40 achieved the photoelectric conversion efficiencies of 3.74%,4.12%and 3.11%,respectively,under AM 1.5 G illumination(100 mW/cm2).
基金supported by the Natural Science Foundation of Hebei Province,China(Grant Nos.E2013203296 and E2017203029)
文摘Photoanodic properties greatly determine the overall performance of quantum-dot-sensitized solar cells（QDSCs）. In the present report, the microdynamic behaviors of carriers in the nanocomposite thin-film, a Zn Se QD-sensitized mesoporous La-doped nano-TiO2 thin-film, as a potential candidate for photoanode, are probed via nanosecond transient photovoltaic（TPV） spectroscopy. The results confirm that the L-Cys ligand has a dual function serving as a stabilizer and molecular linker. Large quantities of interface states are located at the energy level with a photoelectric threshold of1.58 eV and a quantum well（QW） depth of 0.67 eV. This QW depth is approximately 0.14 eV deeper than the depth of QW buried in the Zn Se QDs, and a deeper QW results in a higher quantum confinement energy. A strong quantum confinement effect of the interface state may be responsible for the excellent TPV characteristics of the photoanode. For example, the peak intensity of the TPV response of the QD-sensitized thin-film lasts a long time, from 9.40 × 10^（-7） s to 2.96 × 10^（-4） s,and the end time of the PTV response of the QD-sensitized thin-film is extended by approximately an order of magnitude compared with those of the TiO2 substrate and the QDs. The TPV characteristics of the QD-sensitized thin-film change from p-type to n-type for the QDs before and after sensitizing. These properties strongly depend on the extended diffusion length of the photogenerated carries and the reduced recombination rate of photogenerated electron-hole pairs, resulting in prolonged carrier lifetime and an increased level of electron injection into the TiO2 thin-film substrate.
文摘Perovskite quantum dot light-emitting diodes(Pe-QLEDs)have shown immense application potential in display and lighting fields due to their narrow full-width at half maximum(FWHM)and high photoluminescence quantum yield(PLQY).Despite significant advancements in their performance,challenges such as defects and ion migration still hinder their long-term stability and operational efficiency.To address these issues,various optimization strategies,including ligand engineering,interface passivation,and self-assembly strategy,are being actively researched.This review focuses on the synthesis methods,challenges and optimization of perovskite quantum dots,which are critical for the commercialization and large-scale production of high-performance and stable Pe-QLEDs.
基金Project supported by the Open Fund of Anhui Key Laboratory of Mine Intelligent Equipment and Technology (Grant No. ZKSYS202204)the Talent Introduction Fund of Anhui University of Science and Technology (Grant No. 2021yjrc34)the Scientific Research Fund of Anhui Provincial Education Department (Grant No. KJ2020A0301)。
文摘Implementing quantum wireless multi-hop network communication is essential to improve the global quantum network system. In this paper, we employ eight-level GHZ states as quantum channels to realize multi-hop quantum communication, and utilize the logical relationship between the measurements of each node to derive the unitary operation performed by the end node. The hierarchical simultaneous entanglement switching(HSES) method is adopted, resulting in a significant reduction in the consumption of classical information compared to multi-hop quantum teleportation(QT)based on general simultaneous entanglement switching(SES). In addition, the proposed protocol is simulated on the IBM Quantum Experiment platform(IBM QE). Then, the data obtained from the experiment are analyzed using quantum state tomography, which verifies the protocol's good fidelity and accuracy. Finally, by calculating fidelity, we analyze the impact of four different types of noise(phase-damping, amplitude-damping, phase-flip and bit-flip) in this protocol.
基金support from the National Key Research and Development Program of China(2024YFA1207700)National Natural Science Foundation of China(52072141,52102170).
文摘The quantum confinement effect fundamentally alters the optical and electronic properties of quantum dots(QDs),making them versatile building blocks for next-generation light-emitting diodes(LEDs).This study investigates how quantum confinement governs the charge transport,exciton dynamics,and emission efficiency in QD-LEDs,using CsPbI_(3) QDs as a model system.By systematically varying QD sizes,we reveal size-dependent trade-offs in LED performance,such as enhanced efficiency for smaller QDs but increased brightness and stability for larger QDs under high current densities.Our findings offer critical insights into the design of high-performance QD-LEDs,paving the way for scalable and energy-efficient optoelectronic devices.
基金supported by the National Natural Science Foundation of China(62374142,12175189 and 11904302)External Cooperation Program of Fujian(2022I0004)+1 种基金Fundamental Research Funds for the Central Universities(20720190005 and 20720220085)Major Science and Technology Project of Xiamen in China(3502Z20191015).
文摘The preparation of red,green,and blue quantum dot(QD)pixelated arrays with high precision,resolution,and brightness poses a significant challenge on the development of advanced micro-displays for virtual,augmented,and mixed reality applications.Alongside the controlled synthesis of high-performance QDs,a reliable QD patterning technology is crucial in overcoming this challenge.Among the various methods available,photolithography-based patterning technologies show great potentials in producing ultra-fine QD patterns at micron scale.This review article presents the recent advancements in the field of QD patterning using photolithography techniques and explores their applications in micro-display technology.Firstly,we discuss QD patterning through photolithography techniques employing photoresist(PR),which falls into two categories:PRassisted photolithography and photolithography of QDPR.Subsequently,direct photolithography techniques based on photo-induced crosslinking of photosensitive groups and photo-induced ligand cleavage mechanisms are thoroughly reviewed.Meanwhile,we assess the performance of QD arrays fabricated using these photolithography techniques and their integration into QD light emitting diode display devices as well as color conversionbased micro light emitting diode display devices.Lastly,we summarize the most recent developments in this field and outline future prospects.
文摘Broad area quantum cascade lasers(BA QCLs)have significant applications in many areas,but suffer from demanding pulse operating conditions and poor beam quality due to heat accumulation and generation of high order modes.A structure of mini-array is adopted to improve the heat dissipation capacity and beam quality of BA QCLs.The active region is etched to form a multi-emitter and the channels are filled with In P:Fe,which acts as a lateral heat dissipation channel to improve the lateral heat dissipation efficiency.A device withλ~4.8μm,a peak output power of 122 W at 1.2%duty cycle with a pulse of 1.5μs is obtained in room temperature,with far-field single-lobed distribution.This result allows BA QCLs to obtain high peak power at wider pump pulse widths and higher duty cycle conditions,promotes the application of the mid-infrared laser operating in pulsed mode in th e field of standoff photoacoustic chemical detection,space optical communication,and so on.
基金supported by the National Natural Science Foundation of China(Nos.62374142 and 22005255)Fundamental Research Funds for the Central Universities(Nos.20720220085 and 20720240064)+2 种基金External Cooperation Program of Fujian(No.2022I0004)Major Science and Technology Project of Xiamen in China(No.3502Z20191015)Xiamen Natural Science Foundation Youth Project(No.3502Z202471002)。
文摘Quantum dots(QDs),a type of nanoscale semiconductor material with unique optical and electrical properties like adjustable emission and high photoluminescence quantum yields,are suitable for applications in optoelectronics.However,QDs are typically degraded under humid and high-temperature circumstances,greatly limiting their practical value.Coating the QD surface with an inorganic silica layer is a feasible method for improving stability and endurance in a variety of applications.This paper comprehensively reviews silica coating methodologies on QD surfaces and explores their applications in optoelectronic domains.Firstly,the paper provides mainstream silica coating approaches,which can be divided into two categories:in-situ hydrolysis of silylating reagents on QD surfaces and template techniques for encapsulation QDs.Subsequently,the recent applications of the silica-coated QDs on optoelectronic fields including light-emitting diodes,solar cells,photodetectors were discussed.Finally,it reviews recent advances in silica-coated QD technology and prospects for future applications.
