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Nonvolatile Manipulating Magnetic and Topological Properties in Sliding h-BN Capped MnBi_(2)Te_(4)
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作者 Xuqi Li Haidan Sang +3 位作者 Yu Zhang Hong Xu Shifei Qi Zhenhua Qiao 《Chinese Physics Letters》 2025年第7期310-319,共10页
Interlayer antiferromagnetic coupling,small magnetic anisotropy,and low air stability of the intrinsic magnetic topological insulator MnBi_(2)Te_(4)have been critical bottlenecks to the future application of the quant... Interlayer antiferromagnetic coupling,small magnetic anisotropy,and low air stability of the intrinsic magnetic topological insulator MnBi_(2)Te_(4)have been critical bottlenecks to the future application of the quantum anomalous Hall efect(QAHE)at zero magnetic feld.In this study,we propose a scheme to utilize capped sliding van der Waals materials to efectively modulate the magnetic and topological properties of MnBi_(2)Te_(4).Our results demonstrate that the h-BN/MnBi_(2)Te_(4)/h-BN heterostructure,constructed by sliding ferroelectric h-BN bilayer and MnBi_(2)Te_(4),not only realizes a transition from interlayer antiferromagnetic to ferromagnetic coupling but also signifcantly enhances the out-of-plane magnetism and air stability of MnBi_(2)Te_(4).Moreover,the above magnetic properties can be further improved by tuning the interlayer distance between h-BN and MnBi_(2)Te_(4).Additionally,the obtained band structures and topological properties clearly support that the h-BN/MnBi_(2)Te_(4)/hBN heterostructure can harbor the QAHE with a Chern number of C=1.This work provides a new and nonvolatile modulation approach to achieve high-temperature and high-precision QAHE at zero magnetic feld. 展开更多
关键词 NONVOLATILE quantum anomalous hall efect qahe low air stability intrinsic magnetic topological insulator magnetic properties capped sliding van der waals materials topological properties modulate magnetic topological properties
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磁性拓扑绝缘体中的量子化反常霍尔效应——无需外磁场的量子化霍尔效应 被引量:26
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作者 余睿 张薇 +2 位作者 翁红明 戴希 方忠 《物理》 CAS 北大核心 2010年第9期618-623,共6页
文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区... 文章从平常霍尔效应出发,介绍了反常霍尔效应及其内秉物理机制,并在此基础上介绍了其量子化版本——量子化反常霍尔效应.然后从拓扑有序态的角度,重点讨论了量子化反常霍尔效应与量子霍尔效应、量子自旋霍尔效应、拓扑绝缘体等之间的区别与内在联系.最后介绍了通过在拓扑绝缘体(Bi2Se3,Bi2Te3和Sb2Te3)薄膜中掺杂过渡金属元素(Cr或Fe)实现量子化反常霍尔效应的方法. 展开更多
关键词 反常霍尔效应(AHE) 量子化反常霍尔效应(qahe) 拓扑绝缘体(TI) 磁性绝缘体
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