This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. ...This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature （T） dependence of electron spin relaxation times （T1） in silicon is T1 ∝ T-1.07 at low temperatures and T1 ∝ T-3.3 at high temperatures for acoustic deformation constant Pad = 1.4 × 10^7 eV and optical deformation constant Pod = 4.0 × 10^17 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field （B） dependence of the relaxation times is T1 ∝ B-2.7 at 100 K and T1 ∝ B-2.3 at 150 K, which nearly agree with the result of Yafet, T1 ∝ B-3.0- B -2.5.展开更多
The electron density dependence of the electron spin relaxation time in a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling was calculated using the formula for electron spin re...The electron density dependence of the electron spin relaxation time in a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling was calculated using the formula for electron spin resonance derived by the projection-reduction method. The electron spin relaxation time in GaAs increased with increasing electron density, and the electron density was found to affect the electron spin relaxation differently according to temperature. The electron spin in GaAs was relaxed mainly by optical phonon scattering at high electron densities and piezoelectric phonon scattering at relatively low electron densities.展开更多
文摘This paper introduces a new method for a formula for electron spin relaxation time of a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling using the projection-reduction method. The phonon absorption and emission processes as well as the photon absorption and emission processes in all electron transition processes can be explained in an organized manner, and the result can be represented in a diagram that can provide intuition for the quantum dynamics of electrons in a solid. The temperature （T） dependence of electron spin relaxation times （T1） in silicon is T1 ∝ T-1.07 at low temperatures and T1 ∝ T-3.3 at high temperatures for acoustic deformation constant Pad = 1.4 × 10^7 eV and optical deformation constant Pod = 4.0 × 10^17 eV/m. This means that electrons are scattered by the acoustic deformation phonons at low temperatures and optical deformation phonons at high temperatures, respectively. The magnetic field （B） dependence of the relaxation times is T1 ∝ B-2.7 at 100 K and T1 ∝ B-2.3 at 150 K, which nearly agree with the result of Yafet, T1 ∝ B-3.0- B -2.5.
文摘The electron density dependence of the electron spin relaxation time in a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling was calculated using the formula for electron spin resonance derived by the projection-reduction method. The electron spin relaxation time in GaAs increased with increasing electron density, and the electron density was found to affect the electron spin relaxation differently according to temperature. The electron spin in GaAs was relaxed mainly by optical phonon scattering at high electron densities and piezoelectric phonon scattering at relatively low electron densities.
