To address the challenges of complexity,power consumption,and cost constraints in traditional display driver integrated circuits(DDICs)caused by external NOR Flash and SRAM,this work proposes an embedded resistive ran...To address the challenges of complexity,power consumption,and cost constraints in traditional display driver integrated circuits(DDICs)caused by external NOR Flash and SRAM,this work proposes an embedded resistive random-access memory(RRAM)integration solution based on a 40 nm high-voltage CMOS logic platform.Targeting the yield fluctuations and stability challenges during RRAM mass production,systematic process optimizations are implemented to achieve synergistic improvements in RRAM performance and yield.Through modifications to the film sputtering and pre-deposition treatment,the withinwafer resistance uniformity(RSU)of the oxygen-deficient layer(ODL)thin film is improved from 11%to 8%,while inter-wafer process stability variation reduces from 23%to below 6%.Consequently,the yield of 8 Mb RRAM embedded mass production products increases from 87%to 98.5%.In terms of device performance,the RRAM demonstrates a fast 4.8 ns read speed,exceptional read disturb immunity of 3×10^(8) cycles at 95℃,10^(3) write/erase endurance cycles for the 1 Mb cells,and data retention of 12.5 years at 125℃.Post high-temperature operating life(HTOL)testing exhibits stable high/low resistance window.This study provides process optimization strategies and a reliability assurance framework for the mass production of highly integrated,low-power embedded RRAM display driver IC.展开更多
This study presents a novel nanostructural electrode made of 20-nm-diameter nanoparticles, which orderly decorated with 2-μm TiO2 particles, deposited by a new gel process. The decorated electrode （DE） is better th...This study presents a novel nanostructural electrode made of 20-nm-diameter nanoparticles, which orderly decorated with 2-μm TiO2 particles, deposited by a new gel process. The decorated electrode （DE） is better than the non-decorated electrode （NE） in both light scattering and light harvesting, as confirmed by diffuse reflectance spectroscopy. X-ray diffraction reveals that both electrodes have a mixture of anatase and rutile phases. The dye-sensitized solar cell based on the decorated electrode shows the highest power conversion efficiency of 7.80% as a result of less recombination demonstrated by electrochemical impedance spectroscopy. From internal power conversion efficiency measurement, the external quantum efficiency of DE cell at 530 nm is 89%, which is higher than that of NE cell （77%）.展开更多
Let {Xn; n ≥ 1} be a sequence of independent and identically distributed U[0,1]-distributed random variables. Define the uniform empirical process Fn（t） = n^-1/2 ∑^ni=1 （I{xi≤t} - t）, 0 ≤ t 〈 1, ││Fn││ = ...Let {Xn; n ≥ 1} be a sequence of independent and identically distributed U[0,1]-distributed random variables. Define the uniform empirical process Fn（t） = n^-1/2 ∑^ni=1 （I{xi≤t} - t）, 0 ≤ t 〈 1, ││Fn││ = sup0≤t≤ 1 │Fn（t）│. In this paper, the exact convergence rates of a general law of weighted infinite series of E{││Fn││ -εg^s（n）}＋ are obtained.展开更多
文摘To address the challenges of complexity,power consumption,and cost constraints in traditional display driver integrated circuits(DDICs)caused by external NOR Flash and SRAM,this work proposes an embedded resistive random-access memory(RRAM)integration solution based on a 40 nm high-voltage CMOS logic platform.Targeting the yield fluctuations and stability challenges during RRAM mass production,systematic process optimizations are implemented to achieve synergistic improvements in RRAM performance and yield.Through modifications to the film sputtering and pre-deposition treatment,the withinwafer resistance uniformity(RSU)of the oxygen-deficient layer(ODL)thin film is improved from 11%to 8%,while inter-wafer process stability variation reduces from 23%to below 6%.Consequently,the yield of 8 Mb RRAM embedded mass production products increases from 87%to 98.5%.In terms of device performance,the RRAM demonstrates a fast 4.8 ns read speed,exceptional read disturb immunity of 3×10^(8) cycles at 95℃,10^(3) write/erase endurance cycles for the 1 Mb cells,and data retention of 12.5 years at 125℃.Post high-temperature operating life(HTOL)testing exhibits stable high/low resistance window.This study provides process optimization strategies and a reliability assurance framework for the mass production of highly integrated,low-power embedded RRAM display driver IC.
文摘This study presents a novel nanostructural electrode made of 20-nm-diameter nanoparticles, which orderly decorated with 2-μm TiO2 particles, deposited by a new gel process. The decorated electrode （DE） is better than the non-decorated electrode （NE） in both light scattering and light harvesting, as confirmed by diffuse reflectance spectroscopy. X-ray diffraction reveals that both electrodes have a mixture of anatase and rutile phases. The dye-sensitized solar cell based on the decorated electrode shows the highest power conversion efficiency of 7.80% as a result of less recombination demonstrated by electrochemical impedance spectroscopy. From internal power conversion efficiency measurement, the external quantum efficiency of DE cell at 530 nm is 89%, which is higher than that of NE cell （77%）.
基金Supported by National Natural Science Foundation of China （Grant No. 10901138）, National Science Fundation of Zhejiang Province （Grant No. R6090034） and the Young Excellent Talent Foundation of Huaiyin Normal University Thanks are due to the referees for valuable comments that have led to improvements in this work.
文摘Let {Xn; n ≥ 1} be a sequence of independent and identically distributed U[0,1]-distributed random variables. Define the uniform empirical process Fn（t） = n^-1/2 ∑^ni=1 （I{xi≤t} - t）, 0 ≤ t 〈 1, ││Fn││ = sup0≤t≤ 1 │Fn（t）│. In this paper, the exact convergence rates of a general law of weighted infinite series of E{││Fn││ -εg^s（n）}＋ are obtained.
