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XB-SIM*:A Simulation Framework for Modeling and Exploration of ReRAM-Based CNN Acceleration Design 被引量:4
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作者 Xiang Fei Youhui Zhang Weimin Zheng 《Tsinghua Science and Technology》 SCIE EI CAS CSCD 2021年第3期322-334,共13页
Resistive Random Access Memory(ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance.However,design of these accelerators faces a num... Resistive Random Access Memory(ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance.However,design of these accelerators faces a number of challenges including imperfections of the Re RAM device and a large amount of calculations required to accurately simulate the former.We present XB-SIM,a simulation framework for Re RAM-crossbar-based Convolutional Neural Network(CNN)accelerators.XB-SIM can be flexibly configured to simulate the accelerator’s structure and clock-driven behaviors at the architecture level.This framework also includes an Re RAM-aware Neural Network(NN)training algorithm and a CNN-oriented mapper to train an NN and map it onto the simulated design efficiently.Behavior of the simulator has been verified by the corresponding circuit simulation of a real chip.Furthermore,a batch processing mode of the massive calculations that are required to mimic the behavior of Re RAM-crossbar circuits is proposed to fully apply the computational concurrency of the mapping strategy.On CPU/GPGPU,this batch processing mode can improve the simulation speed by up to 5.02 or 34.29.Within this framework,comprehensive architectural exploration and end-to-end evaluation have been achieved,which provide some insights for systemic optimization. 展开更多
关键词 deep neural network Resistive Random Access memory(Re RAM) simulation ACCELERATOR processing in memory
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