Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO2 shows a multiple-step process.After in...Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO2 shows a multiple-step process.After injection,electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps：The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers.Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss.In this way,the diffusion coefficient and the average life time at different temperatures were extracted.A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2.展开更多
We propose and demonstrate a novel single fiber optical tweezer based on a graded-index multimode fiber（GIMMF）, which works with a free length GIMMF（〉30 cm）. We achieve a three-dimensional stable trap of yeast ce...We propose and demonstrate a novel single fiber optical tweezer based on a graded-index multimode fiber（GIMMF）, which works with a free length GIMMF（〉30 cm）. We achieve a three-dimensional stable trap of yeast cells by using the GIMMF optical tweezers. Compared with the single-mode fiber optical tweezers,the GIMMF optical tweezers possess large optical trapping forces. Owing to the freedom of the GIMMF length,the fabrication of the GIMMF optical tweezers is simple, repeatable, and highly efficient. The GIMMF tweezers have the penitential to become a new member of the single fiber optical tweezers family and have a wide range of applications in the medical and biological cytology fields.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61176080)
文摘Electron trapping properties at the HfO2/SiO2 interface have been measured through Kelvin Probe force microscopy,between room temperature and 90 ℃.The electron diffusion in HfO2 shows a multiple-step process.After injection,electrons diffuse quickly toward the HfO2/SiO2 interface and then diffuse laterally near the interface in two sub-steps：The first is a fast diffusion through shallow trap centers and the second is a slow diffusion through deep trap centers.Evolution of contact potential difference profile in the fast lateral diffusion sub-step was simulated by solving a diffusion equation with a term describing the charge loss.In this way,the diffusion coefficient and the average life time at different temperatures were extracted.A value of 0.57 eV was calculated for the activation energy of the shallow trap centers in HfO2.
基金supported by the National Natural Science Foundation of China(Nos.61227013,61377085,11574061,61405043,and 61675053)the 111 Project(No.B13015)+1 种基金the Postdoctoral Science Foundation Fund of China(Nos.2015T80322,2014M550181,and2014M551217)the Fundamental Research Funds for the Harbin Engineering University of China
文摘We propose and demonstrate a novel single fiber optical tweezer based on a graded-index multimode fiber（GIMMF）, which works with a free length GIMMF（〉30 cm）. We achieve a three-dimensional stable trap of yeast cells by using the GIMMF optical tweezers. Compared with the single-mode fiber optical tweezers,the GIMMF optical tweezers possess large optical trapping forces. Owing to the freedom of the GIMMF length,the fabrication of the GIMMF optical tweezers is simple, repeatable, and highly efficient. The GIMMF tweezers have the penitential to become a new member of the single fiber optical tweezers family and have a wide range of applications in the medical and biological cytology fields.
