This paper investigates the ergodicity and weak convergence of transition probabilities for two-dimensional stochastic primitive equations driven by multiplicative noise.The existence of invariant measures is establis...This paper investigates the ergodicity and weak convergence of transition probabilities for two-dimensional stochastic primitive equations driven by multiplicative noise.The existence of invariant measures is established using the classical Krylov-Bogoliubov theory.The uniqueness of invariant measures and the weak convergence of transition probabilities are demonstrated through the application of the asymptotic coupling method and Foias-Prodi estimate.展开更多
自旋电子器件以磁性隧道结(Magnetic Tunnel Junction,MTJ)为典型代表,因其数据非易失性优异、速度高、能耗低、数据保持时间长、循环读写寿命长、尺寸小、CMOS兼容性好、抗辐射等优点,自诞生之日起,已经成功地应用于磁敏传感器、硬盘...自旋电子器件以磁性隧道结(Magnetic Tunnel Junction,MTJ)为典型代表,因其数据非易失性优异、速度高、能耗低、数据保持时间长、循环读写寿命长、尺寸小、CMOS兼容性好、抗辐射等优点,自诞生之日起,已经成功地应用于磁敏传感器、硬盘磁读头、磁随机存储器等关键核心元器件中,深刻地改造了磁存储工业的面貌.评述(Review)论文首先简要回顾MTJ器件的演化历程,然后介绍自旋转移力矩(Spin Transfer Torque,STT)尤其是自旋轨道力矩-磁随机存储器(Spin Orbit Torque-Magnetic Random Access Memory,SOT-MRAM)和SOT-MTJ方面的最新研发进展,最后详细介绍MTJ除传感器和MRAM以外的一类新的应用场景——真随机数发生器(True Random Number Generators,TRNG),并将其作为概率比特用于概率神经网络,着重介绍TRNG在玻尔兹曼机和人工智能、任意概率分布函数随机数发生器这两方面的应用情况.该方向有望为自旋电子器件开辟差异化于其他新型非易失性存储器的应用领域,为自旋电子学的可持续发展带来新的增长点.展开更多
基金supported in part by the NSFC(12171084,12326367)the Jiangsu Provincial Scientific Research Center of Applied Mathematics(BK20233002)the fundamental Research Funds for the Central Universities(RF1028623037)。
文摘This paper investigates the ergodicity and weak convergence of transition probabilities for two-dimensional stochastic primitive equations driven by multiplicative noise.The existence of invariant measures is established using the classical Krylov-Bogoliubov theory.The uniqueness of invariant measures and the weak convergence of transition probabilities are demonstrated through the application of the asymptotic coupling method and Foias-Prodi estimate.
文摘自旋电子器件以磁性隧道结(Magnetic Tunnel Junction,MTJ)为典型代表,因其数据非易失性优异、速度高、能耗低、数据保持时间长、循环读写寿命长、尺寸小、CMOS兼容性好、抗辐射等优点,自诞生之日起,已经成功地应用于磁敏传感器、硬盘磁读头、磁随机存储器等关键核心元器件中,深刻地改造了磁存储工业的面貌.评述(Review)论文首先简要回顾MTJ器件的演化历程,然后介绍自旋转移力矩(Spin Transfer Torque,STT)尤其是自旋轨道力矩-磁随机存储器(Spin Orbit Torque-Magnetic Random Access Memory,SOT-MRAM)和SOT-MTJ方面的最新研发进展,最后详细介绍MTJ除传感器和MRAM以外的一类新的应用场景——真随机数发生器(True Random Number Generators,TRNG),并将其作为概率比特用于概率神经网络,着重介绍TRNG在玻尔兹曼机和人工智能、任意概率分布函数随机数发生器这两方面的应用情况.该方向有望为自旋电子器件开辟差异化于其他新型非易失性存储器的应用领域,为自旋电子学的可持续发展带来新的增长点.
