The press-pack power module with multi-chip layout has drawn increasing attention from industry and academia with its thermal analysis becoming an essential issue.However,the pressure-dependent thermal variables,such ...The press-pack power module with multi-chip layout has drawn increasing attention from industry and academia with its thermal analysis becoming an essential issue.However,the pressure-dependent thermal variables,such as thermal contact resistance and thermal coupling resistance,are often neglected.In this paper,a pressure-dependent thermal network model is developed to characterize the thermal performance and mechanical status of press-pack power modules.By including the thermal contact resistance and thermal coupling resistance as the function of pressure,the proposed model ensures a more precise thermo-mechanical evaluation inside the press-pack power module.The influence of pressure on self-heating effects and thermal coupling effects of power modules is studied using the knowledge of elastic mechanics.A press-pack prototype with variable pressure loads is assembled.Then,thermal experiments under different pressures on chips are conducted and the pressure-variable temperature responses of the thermal network are measured.Consequently,the feasibility of the proposed thermal network model is validated.A cost-effective prognostic method on the mechanical status of press-pack power module is also achieved.展开更多
In a press-pack insulated gate bipolar transistor(IGBT),a compact packaging structure forms a strong electromagnetic coupling,thermal coupling,and stress coupling,threatening current sharing,temperature sharing,and st...In a press-pack insulated gate bipolar transistor(IGBT),a compact packaging structure forms a strong electromagnetic coupling,thermal coupling,and stress coupling,threatening current sharing,temperature sharing,and stress sharing of paralleled chips.Optimized layouts are proposed based on the inductance analytical model to improve the performance and reliability of Press-Pack IGBT devices.What’s more,transient and steady-state co-simulation using an improved behavioral model is performed to verify the proposed layout.In the test,the PCB Rogowski coil,direct thermocouple,and force-sensitive parameters fittings are used to measure the current distribution,temperature distribution,and stress distribution.The simulation and test results indicate that a rotationally symmetrical layout with IGBT surrounding the FRD mode can achieve uniform current,temperature,and stress.展开更多
The popularity of insulated gate bipolar transistors(IGBTs)for use in high-voltage direct current(HVDC)transmission and flexible AC transmission systems(FACTS)is increasing.Unfortunately,for these applications wire-bo...The popularity of insulated gate bipolar transistors(IGBTs)for use in high-voltage direct current(HVDC)transmission and flexible AC transmission systems(FACTS)is increasing.Unfortunately,for these applications wire-bond IGBT technology has a number of shortcomings,such as insufficient current ratings for the most powerful schemes,and inability to fail to short-circuit.Press-pack IGBT technology,conversely,offers increased current ratings,and an inherent short-circuit failure mode,making it a more attractive choice for HVDC and FACTS.However,the design and manufacture of these devices requires a comprehensive understanding of the unique technical challenges,which differ markedly from those for wirebond modules or traditional pressure contact devices.Specific challenges include providing a high degree of mechanical protection for the IGBT chip against normal operating stresses.Furthermore,it is essential to achieve uniform contact pressure across each chip surface to ensure optimum performance.To achieve this,manufacturers have designed products that use rigid copper electrodes manufactured to tighter tolerances than for other pressure contact devices,such as thyristors,and products that use compliant electrodes,incorporating spring assemblies.Dynex is in the advanced stages of development of press-pack IGBT technology with demonstrated robust solutions for the technical challenges outlined in this paper.Design success has been achieved through the use of state-of-the-art simulations in conjunction with a long history of manufacturing expertise for bipolar and IGBT products.Finally,multiple press-pack IGBT variants are currently undergoing evaluation tests prior to product release.展开更多
Pressure balance is a key technology for Press-Pack IGBT packaging,and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on.By establishing the ...Pressure balance is a key technology for Press-Pack IGBT packaging,and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on.By establishing the physical model of the Press-Pack IGBT device in the finite element simulation software,the influence of the internal flatness condition on the pressure balance is analyzed,and the variation of the average pressure difference with the flatness in different parallel scale of the chips is obtained.The thermal contact resistance and the electrical contact resistance parameters,which are dependent on the pressure,are then imported to perform the multi-field coupling,further investigating the effect of different pressure distributions on temperature distribution.The junction-case thermal resistance of the device with different flatness is compared experimentally.The results have demonstrated the influence of the flatness on the thermal resistance of the Press-Pack IGBT device.展开更多
基金supported by the National Natural Science Foundation of China(5187719252107211)the Zhejiang Provincial Natural Science Foundation of China(LQ21E070006).
文摘The press-pack power module with multi-chip layout has drawn increasing attention from industry and academia with its thermal analysis becoming an essential issue.However,the pressure-dependent thermal variables,such as thermal contact resistance and thermal coupling resistance,are often neglected.In this paper,a pressure-dependent thermal network model is developed to characterize the thermal performance and mechanical status of press-pack power modules.By including the thermal contact resistance and thermal coupling resistance as the function of pressure,the proposed model ensures a more precise thermo-mechanical evaluation inside the press-pack power module.The influence of pressure on self-heating effects and thermal coupling effects of power modules is studied using the knowledge of elastic mechanics.A press-pack prototype with variable pressure loads is assembled.Then,thermal experiments under different pressures on chips are conducted and the pressure-variable temperature responses of the thermal network are measured.Consequently,the feasibility of the proposed thermal network model is validated.A cost-effective prognostic method on the mechanical status of press-pack power module is also achieved.
基金supported by National Key R&D Program of China(2016YFB0901800).
文摘In a press-pack insulated gate bipolar transistor(IGBT),a compact packaging structure forms a strong electromagnetic coupling,thermal coupling,and stress coupling,threatening current sharing,temperature sharing,and stress sharing of paralleled chips.Optimized layouts are proposed based on the inductance analytical model to improve the performance and reliability of Press-Pack IGBT devices.What’s more,transient and steady-state co-simulation using an improved behavioral model is performed to verify the proposed layout.In the test,the PCB Rogowski coil,direct thermocouple,and force-sensitive parameters fittings are used to measure the current distribution,temperature distribution,and stress distribution.The simulation and test results indicate that a rotationally symmetrical layout with IGBT surrounding the FRD mode can achieve uniform current,temperature,and stress.
文摘The popularity of insulated gate bipolar transistors(IGBTs)for use in high-voltage direct current(HVDC)transmission and flexible AC transmission systems(FACTS)is increasing.Unfortunately,for these applications wire-bond IGBT technology has a number of shortcomings,such as insufficient current ratings for the most powerful schemes,and inability to fail to short-circuit.Press-pack IGBT technology,conversely,offers increased current ratings,and an inherent short-circuit failure mode,making it a more attractive choice for HVDC and FACTS.However,the design and manufacture of these devices requires a comprehensive understanding of the unique technical challenges,which differ markedly from those for wirebond modules or traditional pressure contact devices.Specific challenges include providing a high degree of mechanical protection for the IGBT chip against normal operating stresses.Furthermore,it is essential to achieve uniform contact pressure across each chip surface to ensure optimum performance.To achieve this,manufacturers have designed products that use rigid copper electrodes manufactured to tighter tolerances than for other pressure contact devices,such as thyristors,and products that use compliant electrodes,incorporating spring assemblies.Dynex is in the advanced stages of development of press-pack IGBT technology with demonstrated robust solutions for the technical challenges outlined in this paper.Design success has been achieved through the use of state-of-the-art simulations in conjunction with a long history of manufacturing expertise for bipolar and IGBT products.Finally,multiple press-pack IGBT variants are currently undergoing evaluation tests prior to product release.
基金Supported by National Key R&D Program of China(2016YFB0901800).
文摘Pressure balance is a key technology for Press-Pack IGBT packaging,and is studied in this paper with its influence on the temperature distribution discussed in further when the device is turned on.By establishing the physical model of the Press-Pack IGBT device in the finite element simulation software,the influence of the internal flatness condition on the pressure balance is analyzed,and the variation of the average pressure difference with the flatness in different parallel scale of the chips is obtained.The thermal contact resistance and the electrical contact resistance parameters,which are dependent on the pressure,are then imported to perform the multi-field coupling,further investigating the effect of different pressure distributions on temperature distribution.The junction-case thermal resistance of the device with different flatness is compared experimentally.The results have demonstrated the influence of the flatness on the thermal resistance of the Press-Pack IGBT device.
