The p-n junction is the foundation building structure for manufacturing various electronic and optoelec-tronic devices.Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based...The p-n junction is the foundation building structure for manufacturing various electronic and optoelec-tronic devices.Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based electronic device,however,it is very difficult to achieve efficient bipolar doping due to the asymmetric doping effect,thereby impeding the development of p-n homojunction and related bipolar devices,especially for the Ga_(2)O_(3)-based materials and devices.Here,we demonstrate a unique one-step integrated growth of p-type N-doped(201)β-Ga_(2)O_(3)/n-type Si-doped(¯201)β-Ga_(2)O_(3)films by phase tran-sition and in-situ pre-doping of dopants,and fabrication of fullβ-Ga_(2)O_(3)linearly-graded p-n homojunc-tion diode from them.The fullβ-Ga_(2)O_(3)p-n homojunction diode possesses a large built-in potential of 4.52 eV,a high operation electric field>2.90 MV/cm in the reverse-bias regime,good longtime-stable rectifying behaviors with a rectification ratio of 104,and a high-speed switching and good surge robust-ness with a weak minority-carrier charge storage.Our work opens the way to the fabrication of Ga_(2)O_(3)-based p-n homojunction,lays the foundation for fullβ-Ga_(2)O_(3)-based bipolar devices,and paves the way for the novel fabrication of p-n homojunction for wide-bandgap oxides.展开更多
Aqueous rechargeable zinc-ion batteries(ZIBs)have garnered considerable attention due to their safety,cost-effectiveness,and eco-friendliness.There is a growing interest in finding suitable cathode materials for ZIBs....Aqueous rechargeable zinc-ion batteries(ZIBs)have garnered considerable attention due to their safety,cost-effectiveness,and eco-friendliness.There is a growing interest in finding suitable cathode materials for ZIBs.Layered vanadium oxide has emerged as a promising option due to its ability to store zinc ions with high capacity.However,the advancement of high-performance ZIBs encounters obstacles such as sluggish diffusion of zinc ions resulting from the high energy barrier between V_(2)O_(5) layers,degradation of electrode structure over time and consequently lower capacity Na+K+NH+4than the theoretical value.In this study,we investigated the pre-doping of different cations(including,,and)into V_(2)O_(5) to enhance the overall charge storage performance.Our findings indicate that the presence of V4+enhances the NH+4charge storage performance,while the introduction of into V_(2)O_(5) (NH_(4)-V_(2)O_(5) )not only increases the interlayer distance(d(001)=15.99Å),but also significantly increases the V4+/V5+redox couple(atomic concentration ratio increased from 0.14 to 1.08),resulting in the highest electrochemical performance.The NH_(4)-V_(2)O_(5) cathode exhibited a high specific capacity(310.8 mAh·g^(-1) at 100 mA·g^(-1)),improved cycling stability,and a significantly reduced charge transfer resistance(~17.9Ω)compared to pristine V_(2)O_(5) (112.5 mAh·g^(-1) at 0.1 A·g^(-1) and~65.58Ωcharge transfer resistance).This study enhances our understanding and contributes to the development of high-capacity cathode materials,offering valuable insights for the design and optimization of cathode materials to enhance the electrochemical performance of ZIBs.展开更多
基金supported by the National Key R&D Program of China(Grant Nos.2022YFB3605500 and 2022YFB3605503).
文摘The p-n junction is the foundation building structure for manufacturing various electronic and optoelec-tronic devices.Ultrawide bandgap semiconductors are expected to overcome the limited power capability of Si-based electronic device,however,it is very difficult to achieve efficient bipolar doping due to the asymmetric doping effect,thereby impeding the development of p-n homojunction and related bipolar devices,especially for the Ga_(2)O_(3)-based materials and devices.Here,we demonstrate a unique one-step integrated growth of p-type N-doped(201)β-Ga_(2)O_(3)/n-type Si-doped(¯201)β-Ga_(2)O_(3)films by phase tran-sition and in-situ pre-doping of dopants,and fabrication of fullβ-Ga_(2)O_(3)linearly-graded p-n homojunc-tion diode from them.The fullβ-Ga_(2)O_(3)p-n homojunction diode possesses a large built-in potential of 4.52 eV,a high operation electric field>2.90 MV/cm in the reverse-bias regime,good longtime-stable rectifying behaviors with a rectification ratio of 104,and a high-speed switching and good surge robust-ness with a weak minority-carrier charge storage.Our work opens the way to the fabrication of Ga_(2)O_(3)-based p-n homojunction,lays the foundation for fullβ-Ga_(2)O_(3)-based bipolar devices,and paves the way for the novel fabrication of p-n homojunction for wide-bandgap oxides.
文摘Aqueous rechargeable zinc-ion batteries(ZIBs)have garnered considerable attention due to their safety,cost-effectiveness,and eco-friendliness.There is a growing interest in finding suitable cathode materials for ZIBs.Layered vanadium oxide has emerged as a promising option due to its ability to store zinc ions with high capacity.However,the advancement of high-performance ZIBs encounters obstacles such as sluggish diffusion of zinc ions resulting from the high energy barrier between V_(2)O_(5) layers,degradation of electrode structure over time and consequently lower capacity Na+K+NH+4than the theoretical value.In this study,we investigated the pre-doping of different cations(including,,and)into V_(2)O_(5) to enhance the overall charge storage performance.Our findings indicate that the presence of V4+enhances the NH+4charge storage performance,while the introduction of into V_(2)O_(5) (NH_(4)-V_(2)O_(5) )not only increases the interlayer distance(d(001)=15.99Å),but also significantly increases the V4+/V5+redox couple(atomic concentration ratio increased from 0.14 to 1.08),resulting in the highest electrochemical performance.The NH_(4)-V_(2)O_(5) cathode exhibited a high specific capacity(310.8 mAh·g^(-1) at 100 mA·g^(-1)),improved cycling stability,and a significantly reduced charge transfer resistance(~17.9Ω)compared to pristine V_(2)O_(5) (112.5 mAh·g^(-1) at 0.1 A·g^(-1) and~65.58Ωcharge transfer resistance).This study enhances our understanding and contributes to the development of high-capacity cathode materials,offering valuable insights for the design and optimization of cathode materials to enhance the electrochemical performance of ZIBs.
