The two-dimensional layered metal dichalcogenides(LMDs)SnS_(2) is an interesting candidate for high-performance NO_(2) gas sensors.However,most SnS_(2)-based NO_(2) sensors are usually inert for detecting ppblevel NO_...The two-dimensional layered metal dichalcogenides(LMDs)SnS_(2) is an interesting candidate for high-performance NO_(2) gas sensors.However,most SnS_(2)-based NO_(2) sensors are usually inert for detecting ppblevel NO_(2) at room temperature(RT)because of the intrinsic features of a large bandgap,poor conductivity,and lack of active sites.Herein,we successfully endowed SnS_(2) with ppb-level NO_(2) detection at RT by using a carbon(C)-doping strategy.Compared to the pristine SnS_(2) showing a negligible response toward NO_(2) at RT,the C-doped SnS_(2) exhibited an excellent response(481.3%for 1 ppm and 146.5%for 100 ppb)with full recovery.The sensitivity toward ppb-level NO_(2) was as high as 1200%ppm-1.Moreover,the experimental and theoretical limit of detection(LOD)were down to 10 ppb and 0.3 ppb,respectively.Such impressive gas-sensing performance of C-doped SnS_(2) at RT was due to the doping-mediated synergistic effect of energy-band modification and the presence of an S vacancy.The results provide a real solution for developing high-performance LMDs-based gas sensors.展开更多
基金supported by the National Key Research and Development Project of China(No.2019YFA0705201)National Natural Science Foundation of China(No.52072093 and 51802058)Applied Technology Research and Development Program of Heilongjiang Province(No.GY2018ZB0046).
文摘The two-dimensional layered metal dichalcogenides(LMDs)SnS_(2) is an interesting candidate for high-performance NO_(2) gas sensors.However,most SnS_(2)-based NO_(2) sensors are usually inert for detecting ppblevel NO_(2) at room temperature(RT)because of the intrinsic features of a large bandgap,poor conductivity,and lack of active sites.Herein,we successfully endowed SnS_(2) with ppb-level NO_(2) detection at RT by using a carbon(C)-doping strategy.Compared to the pristine SnS_(2) showing a negligible response toward NO_(2) at RT,the C-doped SnS_(2) exhibited an excellent response(481.3%for 1 ppm and 146.5%for 100 ppb)with full recovery.The sensitivity toward ppb-level NO_(2) was as high as 1200%ppm-1.Moreover,the experimental and theoretical limit of detection(LOD)were down to 10 ppb and 0.3 ppb,respectively.Such impressive gas-sensing performance of C-doped SnS_(2) at RT was due to the doping-mediated synergistic effect of energy-band modification and the presence of an S vacancy.The results provide a real solution for developing high-performance LMDs-based gas sensors.
