We discuss recent progress in using machine-learning(ML)-enabled inverse design techniques applied to photonic devices and components.Specifically,we highlight the design of optical sources,including fiber and semicon...We discuss recent progress in using machine-learning(ML)-enabled inverse design techniques applied to photonic devices and components.Specifically,we highlight the design of optical sources,including fiber and semiconductor lasers,as well as Raman and semiconductor optical amplifiers.Although inverse design approaches for optical detectors remain relatively underexplored,we examine optical layers,particularly metamaterial absorbers,as promising candidates for high-performance optical detection.In addition,we underscore advancements in inverse designing passive optical components,including beam splitters,gratings,and optical fibers.These optical blocks are fundamental in developing next-generation standalone optical communication systems and optical sensing networks,including integrated sensing and communication technologies.While categorizing various reported deep learning architectures across five paradigms,we offer a paradigm-based perspective that reveals how different ML techniques function within modern inverse design methods and enable fast,data-driven solutions that significantly reduce design time and computational demands compared with traditional optimization methods.展开更多
In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and S...In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.展开更多
Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC d...Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC devices are presented.The technologies and challenges for HV SiC device application in converter design are discussed.The state-of-the-art applications of HV SiC devices are also reviewed.展开更多
Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks ...Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_(B)in conventional devices.This results in a reduction of the trade-off relationship between specific on-resistance R_(on,sp)and V_(B)from the conventional R_(on,sp)∝V_(B)^(2.5)to R_(on,sp)∝W·V_(B)^(1.32),and even to R_(on,sp)∝W·V_(B)^(1.03).As the exponential term coefficient decreases,R_(on,sp)decreases with the cell width W,exhibiting a development pattern reminiscent of"Moore's Law".This paper provides an overview of the latest research developments in SJ power semiconductor devices.Firstly,it introduces the minimum specific on-resistance R_(on,min)theory of SJ devices,along with its combination with special effects like 3-D depletion and tunneling,discussing the development of R_(on,min)theory in the wide bandgap SJ field.Subsequently,it discusses the latest advancements in silicon-based and wide bandgap SJ power devices.Finally,it introduces the homogenization field(HOF)and high-K voltage-sustaining layers derived from the concept of SJ charge balance.SJ has made significant progress in device performance,reliability,and integration,and in the future,it will continue to evolve through deeper integration with different materials,processes,and packaging technologies,enhancing the overall performance of semiconductor power devices.展开更多
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect tra...Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.展开更多
Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a ...Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.展开更多
Wide-bandgap(WBG)semiconductor devices based on silicon carbide(SiC)and gallium nitride(GaN)have emerged as transformative technologies in power electronics,offering significant advantages over traditional silicon dev...Wide-bandgap(WBG)semiconductor devices based on silicon carbide(SiC)and gallium nitride(GaN)have emerged as transformative technologies in power electronics,offering significant advantages over traditional silicon devices in terms of efficiency,power density,and thermal performance.This paper provides a comprehensive review of the fundamental material properties,fabrication processes,and key device architectures underpinning WBG technology.We analyze the application of SiC and GaN devices across a range of power electronic systems including inverters,DC-DC converters,motor drives,and grid equipment,highlighting their impact on system efficiency and size reduction.Performance optimization techniques,thermal management strategies,and reliability challenges are discussed in depth to provide insight into current technological limitations and future directions.Furthermore,we explore advanced drive circuits,control algorithms,and system integration methodologies tailored to exploit the fast switching capabilities of WBG devices while ensuring electromagnetic compatibility.This work aims to elucidate the critical role of WBG semiconductors in enabling the next generation of high-efficiency,compact,and robust power electronic systems,thereby facilitating broader adoption in emerging applications such as electric vehicles,renewable energy,and smart grids.展开更多
In power electronics applications,the selection of condition monitoring methods significantly affects both the precision and complexity of the junction temperature evaluation,which is essential for the reliability ass...In power electronics applications,the selection of condition monitoring methods significantly affects both the precision and complexity of the junction temperature evaluation,which is essential for the reliability assessment of power semiconductor devices.This study begins with a failure mechanism analysis of state-of-the-art power semiconductor devices.Junction temperature measurement methods can be categorized into three distinct approaches:thermal image-based,thermal model-based,and temperature-sensitive electrical parameter(TSEP)-based methods.Their respective advantages and disadvantages are comprehensively compared.Moreover,condition monitoring of the ON-state voltage drop is summarized and benchmarked.ON-state voltage and junction temperature measurements are experimentally demonstrated in a standard three-phase converter,which provides superior measurement accuracy and rapid dynamic response characteristics.Additionally,this investigation is extended to measurement methods for TSEP in wide-bandgap semiconductors.展开更多
Ideally,converter losses should be determined without using an excessive amount of simulation time.State-of-the-art power semiconductor models provide good accuracy,unfortunately they often require a very long simulat...Ideally,converter losses should be determined without using an excessive amount of simulation time.State-of-the-art power semiconductor models provide good accuracy,unfortunately they often require a very long simulation time.This paper describes how to estimate power losses from simulation using ideal switches combined with measured power loss data.The semiconductor behavior is put into a look-up table,which replaces the advanced semiconductor models and shortens the simulation time.To extract switching and conduction losses,a converter is simulated and the semiconductor power losses are estimated.Measurement results on a laboratory converter are compared with the estimated losses and a good agreement is shown.Using the ideal switch simulation and the post processing power estimation program,a ten to twenty fold increase in simulation speed is obtained,compared to simulations using advanced models of semiconductors.展开更多
Power Semiconductors are still the driving force for many power electronic systems.In this paper the development of the key power semiconductors devices for power supplies are shown,and their electrical performance di...Power Semiconductors are still the driving force for many power electronic systems.In this paper the development of the key power semiconductors devices for power supplies are shown,and their electrical performance discussed.Future directions of the major power semiconductor devices like the IGBT,Super Junction technology and SiC device will be explained.展开更多
随着宇航工程的发展,以第三代半导体SiC为代表的新型元器件将极大提高宇航器性能,将成为未来空间应用的主力军。新型元器件的空间应用要应对空间辐射效应带来的风险,需要开展实验分析和相关保障研究。对1200 V SiC器件进行了单粒子仿真...随着宇航工程的发展,以第三代半导体SiC为代表的新型元器件将极大提高宇航器性能,将成为未来空间应用的主力军。新型元器件的空间应用要应对空间辐射效应带来的风险,需要开展实验分析和相关保障研究。对1200 V SiC器件进行了单粒子仿真和重离子环境实验,创新性地提出了SiC器件在单粒子环境下的失效机理,分析了导致SiC器件失效的原因,给出了仿真条件下SiC器件不同区域的单粒子敏感度。展开更多
基金the School of Engineering and Built Environment at Anglia Ruskin University,UK,for the supportthe support of IRC-CSS and the Electrical Engineering Department,KFUPM,Saudi Arabia。
文摘We discuss recent progress in using machine-learning(ML)-enabled inverse design techniques applied to photonic devices and components.Specifically,we highlight the design of optical sources,including fiber and semiconductor lasers,as well as Raman and semiconductor optical amplifiers.Although inverse design approaches for optical detectors remain relatively underexplored,we examine optical layers,particularly metamaterial absorbers,as promising candidates for high-performance optical detection.In addition,we underscore advancements in inverse designing passive optical components,including beam splitters,gratings,and optical fibers.These optical blocks are fundamental in developing next-generation standalone optical communication systems and optical sensing networks,including integrated sensing and communication technologies.While categorizing various reported deep learning architectures across five paradigms,we offer a paradigm-based perspective that reveals how different ML techniques function within modern inverse design methods and enable fast,data-driven solutions that significantly reduce design time and computational demands compared with traditional optimization methods.
基金supported by the National Natural Science Foundation of China(NSFC,No.62074048)the Key Research and Development Plan of Anhui Province(No.2022f04020007)the Natural Science Foundation of Anhui Province(No.2208085MF177)。
文摘In this study,we present the fabrication of vertical SnO/β-Ga_(2)O_(3) heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets betweenβ-Ga_(2)O_(3) and SnO are determined to be 2.65and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱband alignment.Compared to its Schottky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(R_(on,sp))of 2.8 mΩ·cm^(2) and lower reverse leakage current(I_R),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm~2.This demonstrates the high quality of the SnO/β-Ga_(2)O_(3) heterojunction interface.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga_(2)O_(3) heterojunction in the futureβ-Ga_(2)O_(3)-based power devices.data mining,AI training,and similar technologies,are reserved.
基金This work made use of the Engineering Research Center Shared Facilities supported by the Engineering Research Center Program of the National Science Foundation and DOE under ARPA-E and Power America Program and the CURENT Industry Partnership Program.
文摘Research on high voltage(HV)silicon carbide(SiC)power semiconductor devices has attracted much attention in recent years.This paper overviews the development and status of HV SiC devices.Meanwhile,benefits of HV SiC devices are presented.The technologies and challenges for HV SiC device application in converter design are discussed.The state-of-the-art applications of HV SiC devices are also reviewed.
文摘Superjunction(SJ)is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a"milestone"in power MOS.Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V_(B)in conventional devices.This results in a reduction of the trade-off relationship between specific on-resistance R_(on,sp)and V_(B)from the conventional R_(on,sp)∝V_(B)^(2.5)to R_(on,sp)∝W·V_(B)^(1.32),and even to R_(on,sp)∝W·V_(B)^(1.03).As the exponential term coefficient decreases,R_(on,sp)decreases with the cell width W,exhibiting a development pattern reminiscent of"Moore's Law".This paper provides an overview of the latest research developments in SJ power semiconductor devices.Firstly,it introduces the minimum specific on-resistance R_(on,min)theory of SJ devices,along with its combination with special effects like 3-D depletion and tunneling,discussing the development of R_(on,min)theory in the wide bandgap SJ field.Subsequently,it discusses the latest advancements in silicon-based and wide bandgap SJ power devices.Finally,it introduces the homogenization field(HOF)and high-K voltage-sustaining layers derived from the concept of SJ charge balance.SJ has made significant progress in device performance,reliability,and integration,and in the future,it will continue to evolve through deeper integration with different materials,processes,and packaging technologies,enhancing the overall performance of semiconductor power devices.
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
基金supported by the National Key Research and Development Program(No.2016YFB0400500)the Key Research and Development Projects in Guangdong Province(No.2019B010144001)。
文摘Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off.It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices.Numerous efforts have been conducted to employ the same concept in silicon carbide devices.These works are summarized here.
文摘Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.
文摘Wide-bandgap(WBG)semiconductor devices based on silicon carbide(SiC)and gallium nitride(GaN)have emerged as transformative technologies in power electronics,offering significant advantages over traditional silicon devices in terms of efficiency,power density,and thermal performance.This paper provides a comprehensive review of the fundamental material properties,fabrication processes,and key device architectures underpinning WBG technology.We analyze the application of SiC and GaN devices across a range of power electronic systems including inverters,DC-DC converters,motor drives,and grid equipment,highlighting their impact on system efficiency and size reduction.Performance optimization techniques,thermal management strategies,and reliability challenges are discussed in depth to provide insight into current technological limitations and future directions.Furthermore,we explore advanced drive circuits,control algorithms,and system integration methodologies tailored to exploit the fast switching capabilities of WBG devices while ensuring electromagnetic compatibility.This work aims to elucidate the critical role of WBG semiconductors in enabling the next generation of high-efficiency,compact,and robust power electronic systems,thereby facilitating broader adoption in emerging applications such as electric vehicles,renewable energy,and smart grids.
文摘In power electronics applications,the selection of condition monitoring methods significantly affects both the precision and complexity of the junction temperature evaluation,which is essential for the reliability assessment of power semiconductor devices.This study begins with a failure mechanism analysis of state-of-the-art power semiconductor devices.Junction temperature measurement methods can be categorized into three distinct approaches:thermal image-based,thermal model-based,and temperature-sensitive electrical parameter(TSEP)-based methods.Their respective advantages and disadvantages are comprehensively compared.Moreover,condition monitoring of the ON-state voltage drop is summarized and benchmarked.ON-state voltage and junction temperature measurements are experimentally demonstrated in a standard three-phase converter,which provides superior measurement accuracy and rapid dynamic response characteristics.Additionally,this investigation is extended to measurement methods for TSEP in wide-bandgap semiconductors.
文摘Ideally,converter losses should be determined without using an excessive amount of simulation time.State-of-the-art power semiconductor models provide good accuracy,unfortunately they often require a very long simulation time.This paper describes how to estimate power losses from simulation using ideal switches combined with measured power loss data.The semiconductor behavior is put into a look-up table,which replaces the advanced semiconductor models and shortens the simulation time.To extract switching and conduction losses,a converter is simulated and the semiconductor power losses are estimated.Measurement results on a laboratory converter are compared with the estimated losses and a good agreement is shown.Using the ideal switch simulation and the post processing power estimation program,a ten to twenty fold increase in simulation speed is obtained,compared to simulations using advanced models of semiconductors.
文摘Power Semiconductors are still the driving force for many power electronic systems.In this paper the development of the key power semiconductors devices for power supplies are shown,and their electrical performance discussed.Future directions of the major power semiconductor devices like the IGBT,Super Junction technology and SiC device will be explained.
文摘随着宇航工程的发展,以第三代半导体SiC为代表的新型元器件将极大提高宇航器性能,将成为未来空间应用的主力军。新型元器件的空间应用要应对空间辐射效应带来的风险,需要开展实验分析和相关保障研究。对1200 V SiC器件进行了单粒子仿真和重离子环境实验,创新性地提出了SiC器件在单粒子环境下的失效机理,分析了导致SiC器件失效的原因,给出了仿真条件下SiC器件不同区域的单粒子敏感度。
