This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[
The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. ...The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.展开更多
As the power electronics technology is widely used in the power system, it may also bring the DC component to the transformer operation, resulting in DC bias and may cause great harm to the transformer. In this articl...As the power electronics technology is widely used in the power system, it may also bring the DC component to the transformer operation, resulting in DC bias and may cause great harm to the transformer. In this article, the device to protect transformer from DC magnetic bias is designed. On the basis of load DC current, a magnetic bias protection device is developed by combination of current sensor, electric information collection circuit, signal filtering circuit, signal modulating circuits, fault feature judging circuit, automatic range tracking circuit, intelligent logic synthesis unit and implementation output circuit. By operating in temperature-rise test equipment in the high power electronic lab, the device is proved with reliability, high sensitivity and worthy of promotion and application.展开更多
Power electronic devices are the core components of modern power converters,not only for normal applications,but also for extreme conditions.Current design of power electronic devices require large redundancies for re...Power electronic devices are the core components of modern power converters,not only for normal applications,but also for extreme conditions.Current design of power electronic devices require large redundancies for reliability.This results in huge volume and weight for a large-capacity power converter,especially for some extreme applications.Therefore,to optimize the power density,the reliability of power devices needs to be investigated first in order to obtain the accurate operational margin of a power device.Although much research on device failure analysis has been reported,there still lacks efficient failure evaluation methods.This paper first summarizes the current failure research.Then,a three-step failure analysis method of power electronic devices is proposed as:failure information collection,failure identification and mechanism,and failure evaluation.The physics-based modeling method is emphasized since it has a strong relationship with the device fundamentals.After that,power electronic device applications under extreme conditions are introduced and a design method of device under extreme conditions is proposed based on the thermal equilibrium idea.Finally,the challenges and prospects to improve the power device reliability under extreme conditions are concluded.展开更多
The integration of numerous distributed energy resources and power electronic devices introduces a wide spectrum of frequency disturbances,which significantly challenge the stability of modern power systems.Therefore,...The integration of numerous distributed energy resources and power electronic devices introduces a wide spectrum of frequency disturbances,which significantly challenge the stability of modern power systems.Therefore,there is an urgent need to enhance the current monitoring level of modern power systems.This paper proposes a novel busbar current inversion scheme based on an elliptical magnetic sensor array.By establishing a simulation model,the effect of structural parameters of the elliptical array on its current measurement accuracy was analysed.The anti-interference capability of the elliptical array in complex environments such as busbar displacement and crosstalk was studied,and principles for designing array parameters under different current sensor standards were established.Experiments conducted on the proposed current sensing scheme demon-strated that the designed current array has a range of 0-150 A,with a current mea-surement error below 0.1% without external interference and not exceeding 1%during busbar displacement.Under conditions of crosstalk,the measurement accuracy achieved was class 0.5.The sensor array possesses high measurement accuracy,robust anti-interference capability,low power consumption,compact size and a noncontact nature.It exhibits significant potential for extensive application in novel business scenarios within the power system.展开更多
Ensuring reliable and safe operation of high-power electronic devices necessitates the development of high-quality dielectric nano-capacitors with high recoverable energy density(URec)and efficiency(η)at low applied ...Ensuring reliable and safe operation of high-power electronic devices necessitates the development of high-quality dielectric nano-capacitors with high recoverable energy density(URec)and efficiency(η)at low applied electric fields(E)/voltages.In this work,we demonstrate ultra-high URec andηat low E<500 kV/cm in as-grown epitaxial relaxor ferroelectric(RFE)PMN-33PT films,rivaling those typically achieved in state-of-the-art RFE and antiferroelectric(AFE)materials.The high energy storage properties were achieved using a synergistic strategy involving large polarization,a giant built-in potential/imprint(five times higher than the coercive field),and AFE like behavior.The structural,chemical,and electrical investigations revealed that these achievements mainly arise from the effects of strain,dipole defects,and chemical composition.For instance,at low E,the capacitors exhibit under 160 kV/cm(i.e.,8 V)and 400 kV/cm(i.e.,20 V),respectively,an ultra-highΔP(45μC/cm^(2)and 60μC/cm^(2)),UE=URec/E(21 J·MV/cm^(2)and 17 J·MV/cm^(2)),and UF=URec/(1-η)(20 J/cm^(3)and 47 J/cm^(3))with a robust charge-discharge fatigue endurance and outstanding frequency and thermal stability.Additionally,the designed films exhibit outstanding energy storage performance at higher E up to 2 MV/cm(ΔP≈78μC/cm^(2),UE≈17.3 J·MV/cm^(2)and UF≈288 J/cm^(3))due to their low leakage current density.展开更多
文摘This paper presents the study and application of the electronic device anti-interference techniques underhigh voltage and/or heavy current electro-magnetic circumstance in power system.[
文摘The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.
文摘As the power electronics technology is widely used in the power system, it may also bring the DC component to the transformer operation, resulting in DC bias and may cause great harm to the transformer. In this article, the device to protect transformer from DC magnetic bias is designed. On the basis of load DC current, a magnetic bias protection device is developed by combination of current sensor, electric information collection circuit, signal filtering circuit, signal modulating circuits, fault feature judging circuit, automatic range tracking circuit, intelligent logic synthesis unit and implementation output circuit. By operating in temperature-rise test equipment in the high power electronic lab, the device is proved with reliability, high sensitivity and worthy of promotion and application.
基金the key program of National Natural Science Foundation of China under Grant 51490681National Key Basic Research Program of China(973 Program)under Grant 2015CB251004National Natural Science Foundation of China under Grant 51507185.
文摘Power electronic devices are the core components of modern power converters,not only for normal applications,but also for extreme conditions.Current design of power electronic devices require large redundancies for reliability.This results in huge volume and weight for a large-capacity power converter,especially for some extreme applications.Therefore,to optimize the power density,the reliability of power devices needs to be investigated first in order to obtain the accurate operational margin of a power device.Although much research on device failure analysis has been reported,there still lacks efficient failure evaluation methods.This paper first summarizes the current failure research.Then,a three-step failure analysis method of power electronic devices is proposed as:failure information collection,failure identification and mechanism,and failure evaluation.The physics-based modeling method is emphasized since it has a strong relationship with the device fundamentals.After that,power electronic device applications under extreme conditions are introduced and a design method of device under extreme conditions is proposed based on the thermal equilibrium idea.Finally,the challenges and prospects to improve the power device reliability under extreme conditions are concluded.
基金National Key Research and Development Program of China,Grant/Award Number:2022YFB2402900Science and Technology Project of State Grid,Grant/Award Number:52060023001T。
文摘The integration of numerous distributed energy resources and power electronic devices introduces a wide spectrum of frequency disturbances,which significantly challenge the stability of modern power systems.Therefore,there is an urgent need to enhance the current monitoring level of modern power systems.This paper proposes a novel busbar current inversion scheme based on an elliptical magnetic sensor array.By establishing a simulation model,the effect of structural parameters of the elliptical array on its current measurement accuracy was analysed.The anti-interference capability of the elliptical array in complex environments such as busbar displacement and crosstalk was studied,and principles for designing array parameters under different current sensor standards were established.Experiments conducted on the proposed current sensing scheme demon-strated that the designed current array has a range of 0-150 A,with a current mea-surement error below 0.1% without external interference and not exceeding 1%during busbar displacement.Under conditions of crosstalk,the measurement accuracy achieved was class 0.5.The sensor array possesses high measurement accuracy,robust anti-interference capability,low power consumption,compact size and a noncontact nature.It exhibits significant potential for extensive application in novel business scenarios within the power system.
基金supported by the Slovenian Research Agency(Nos.P2-0091,J2-2510,N2-0187,N2-0149,and P1-0125)the Swiss National Science Foundation(Lead Agency Grant No.192047)the Region Hauts-de-France(Projects TERRA(AAP STARS-N°21002758)and TRANSITION(CPER MANIFEST-N°22006563)).
文摘Ensuring reliable and safe operation of high-power electronic devices necessitates the development of high-quality dielectric nano-capacitors with high recoverable energy density(URec)and efficiency(η)at low applied electric fields(E)/voltages.In this work,we demonstrate ultra-high URec andηat low E<500 kV/cm in as-grown epitaxial relaxor ferroelectric(RFE)PMN-33PT films,rivaling those typically achieved in state-of-the-art RFE and antiferroelectric(AFE)materials.The high energy storage properties were achieved using a synergistic strategy involving large polarization,a giant built-in potential/imprint(five times higher than the coercive field),and AFE like behavior.The structural,chemical,and electrical investigations revealed that these achievements mainly arise from the effects of strain,dipole defects,and chemical composition.For instance,at low E,the capacitors exhibit under 160 kV/cm(i.e.,8 V)and 400 kV/cm(i.e.,20 V),respectively,an ultra-highΔP(45μC/cm^(2)and 60μC/cm^(2)),UE=URec/E(21 J·MV/cm^(2)and 17 J·MV/cm^(2)),and UF=URec/(1-η)(20 J/cm^(3)and 47 J/cm^(3))with a robust charge-discharge fatigue endurance and outstanding frequency and thermal stability.Additionally,the designed films exhibit outstanding energy storage performance at higher E up to 2 MV/cm(ΔP≈78μC/cm^(2),UE≈17.3 J·MV/cm^(2)and UF≈288 J/cm^(3))due to their low leakage current density.
