Silicon stands as a key anode material in lithium-ion battery ascribing to its high energy density.Nevertheless,the poor rate performance and limited cycling life remain unresolved through conventional approaches that...Silicon stands as a key anode material in lithium-ion battery ascribing to its high energy density.Nevertheless,the poor rate performance and limited cycling life remain unresolved through conventional approaches that involve carbon composites or nanostructures,primarily due to the un-controllable effects arising from the substantial formation of a solid electrolyte interphase(SEI)during the cycling.Here,an ultra-thin and homogeneous Ti doping alumina oxide catalytic interface is meticulously applied on the porous Si through a synergistic etching and hydrolysis process.This defect-rich oxide interface promotes a selective adsorption of fluoroethylene carbonate,leading to a catalytic reaction that can be aptly described as“molecular concentration-in situ conversion”.The resultant inorganic-rich SEI layer is electrochemical stable and favors ion-transport,particularly at high-rate cycling and high temperature.The robustly shielded porous Si,with a large surface area,achieves a high initial Coulombic efficiency of 84.7%and delivers exceptional high-rate performance at 25 A g^(−1)(692 mAh g^(−1))and a high Coulombic efficiency of 99.7%over 1000 cycles.The robust SEI constructed through a precious catalytic layer promises significant advantages for the fast development of silicon-based anode in fast-charging batteries.展开更多
Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this cas...Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.展开更多
Silicon(Si)is a competitive anode material owing to its high theoretical capacity and low electrochemical potential.Recently,the prospect of Si anodes in solid-state batteries(SSBs)has been proposed due to less solid ...Silicon(Si)is a competitive anode material owing to its high theoretical capacity and low electrochemical potential.Recently,the prospect of Si anodes in solid-state batteries(SSBs)has been proposed due to less solid electrolyte interphase(SEI)formation and particle pulverization.However,major challenges arise for Si anodes in SSBs at elevated temperatures.In this work,the failure mechanisms of Si-Li_(6)PS_(5)Cl(LPSC)composite anodes above 80℃are thoroughly investigated from the perspectives of interface stability and(electro)chemo-mechanical effect.The chemistry and growth kinetics of Lix Si|LPSC interphase are demonstrated by combining electrochemical,chemical and computational characterizations.Si and/or Si–P compound formed at Lix Si|LPSC interface prove to be detrimental to interface stability at high temperatures.On the other hand,excessive volume expansion and local stress caused by Si lithiation at high temperatures damage the mechanical structure of Si-LPSC composite anodes.This work elucidates the behavior and failure mechanisms of Si-based anodes in SSBs at high temperatures and provides insights into upgrading Si-based anodes for application in SSBs.展开更多
By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The...By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters （doping concentration and thickness） is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si：H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.展开更多
One problem associated with microcavity devices is the significant difference between the reflection spectra of fabricated porous silicon microcavity(PSM) devices and those obtained by theoretical calculation of ideal...One problem associated with microcavity devices is the significant difference between the reflection spectra of fabricated porous silicon microcavity(PSM) devices and those obtained by theoretical calculation of ideal microcavity devices.To address this problem, studies were carried out to determine the effects of the refractive index dispersion, the absorption of the porous silicon layer and the fluctuation of the dielectric interface on the reflection spectra of PSM devices.The results are in good agreement with those obtained experimentally from the fabricated PSM devices, which provides a theoretical basis for the design of PSM sensors.展开更多
Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface pass...Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density（D_（it）） from lifetime measurement is proposed.The interface state density（D_（it）） measurement is also performed by using deep-level transient spectroscopy（DLTS） to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si：H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry（SE） and Fourier transform infrared spectroscopy（FTIR） respectively.Lower values of interface state density（D_（it）） are obtained by using a-Si：H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.展开更多
Micro-silicon(Si)anode that features high theoretical capacity and fine tap density is ideal for energy-dense lithiumion batteries.However,the substantial localized mechanical strain caused by the large volume expansi...Micro-silicon(Si)anode that features high theoretical capacity and fine tap density is ideal for energy-dense lithiumion batteries.However,the substantial localized mechanical strain caused by the large volume expansion often results in electrode disintegration and capacity loss.Herein,a microporous Si anode with the SiO_(x)/C layer functionalized all-surface and high tap density(~0.65 g cm^(-3))is developed by the hydrolysis-driven strategy that avoids the common use of corrosive etchants and toxic siloxane reagents.The functionalized inner pore with superior structural stability can effectively alleviate the volume change and enhance the electrolyte contact.Simultaneously,the outer particle surface forms a continuous network that prevents electrolyte parasitic decomposition,disperses the interface stress of Si matrix and facilitates electron/ion transport.As a result,the micron-sized Si anode shows only~9.94 GPa average stress at full lithiation state and delivers an impressive capacity of 901.1 mAh g^(-1)after 500 cycles at 1 A g^(-1).It also performs excellent rate performance of 1123.0 mAh g^(-1)at 5 A g^(-1)and 850.4 at 8 A g^(-1),far exceeding most of reported literatures.Furthermore,when paired with a commercial LiNi_(0.8)Co_(0.1)Mn_(0.1)O_(2),the pouch cell demonstrates high capacity and desirable cyclic performance.展开更多
Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effec...Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effects of silicon carbide nanofibers on the microstructure of the pyrolytic carbon and the thermal conductivity of the SiCNF-C/C composite were investigated. Results show that silicon carbide nanofibers on the surface of carbon fibers induce the deposition of high texture pyrolytic carbon around them. The interface bonding between carbon fibers and pyrolytic carbon is well adjusted. So the efficiency of heat transfer in the interface of the composite is well enhanced. The thermal conductivity of the SiCNF-C/C composite is greater than that of the C/C composite, especially the thermal conductivity perpendicular to the fiber axis.展开更多
Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si...Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.展开更多
Silicon(Si)has been studied as a promising alloying type anode for lithium-ion batteries due to its high specific capacity,low operating potential and abundant resources.Nevertheless,huge volume expansion during alloy...Silicon(Si)has been studied as a promising alloying type anode for lithium-ion batteries due to its high specific capacity,low operating potential and abundant resources.Nevertheless,huge volume expansion during alloying/dealloying processes and low electronic conductivity of Si anodes restrict their electrochemical performance.Thus,carbon(C)materials with special physical and chemical properties are applied in Si anodes to effectively solve these problems.This review focuses on current status in the exploration of Si/C anodes,including the lithiation mechanism and solid electrolyte interface formation,various carbon sources in Si/C anodes,such as traditional carbon sources(graphite,pitch,biomass),and novel carbon sources(MXene,graphene,MOFs-derived carbon,graphdiyne,etc.),as well as interfacial bonding modes of Si and C in the Si/C anodes.Finally,we summarize and prospect the selection of carbonaceous materials,structural design and interface control of Si/C anodes,and application of Si/C anodes in all-solid-state lithium-ion batteries and sodium-ion batteries et al.This review will help researchers in the design of novel Si/C anodes for rechargeable batteries.展开更多
Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emi...Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.展开更多
Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate ...Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.展开更多
The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporou...The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.展开更多
The microstructure of SiC whisker reinforced aluminium alloy (SiC_w/Al) composite is reviewed,and the SiC-Al interface in SiC_w/Al composite is especially discussed,The main contents are morphology of the aluminium ma...The microstructure of SiC whisker reinforced aluminium alloy (SiC_w/Al) composite is reviewed,and the SiC-Al interface in SiC_w/Al composite is especially discussed,The main contents are morphology of the aluminium matrix in SiC_w/Al composite;microstructures and defects of SiC whiskers in SiC_w/Al composite and bonding mechanisms of the SiC-Al interface in SiC_w/Al com- posite.展开更多
P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on...P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.展开更多
Silicon is considered one of the most promising anode materials owing to its high theoretical energy density,however,the volume expansion/contraction during electrochemical lithiation/delithiation cycles leads to inst...Silicon is considered one of the most promising anode materials owing to its high theoretical energy density,however,the volume expansion/contraction during electrochemical lithiation/delithiation cycles leads to instability of the solid electrolyte interphase(SEI),which ultimately results in capacity degradation.Herein,the local stress and deformation evolution status of an SEI layer on an anode particle are investigated through a quantitative electrochemical-mechanical model.The impacts of structural uniformity,mechanical strength,and operating conditions on the stability of the SEI layer are investigated in detail.The simulation results demonstrate that when the silicon particle radius decreases from 800 nm to 600 and 400 nm,the failure time increases by 29%and 65%,respectively,of the original failure time;When the structural defect depth ratio is reduced from 0.6 to 0.4 and 0.2,the failure time increases by 72%and 132%,respectively;For the discharge rate,the condition at 0.1 C has 34%and 139%longer time to failure than that at 0.2 C and 0.3 C,respectively.This work provides insight into the rational design of stable SEI layers and sheds light on possible methods for constructing silicon-based lithium-ion batteries with longer cycling lives.展开更多
基金the National Key R&D Plan of the Ministry of Science and Technology of China(2022YFE0122400)National Natural Science Foundation of China(52002238,22102207)+1 种基金Science and Technology Commission of Shanghai Municipality(22ZR1423800,21ZR1465200,23ZR1423600)Shanghai Municipal Education Commission and the NSRF via the Program Management Unit for Human Resources&Institutional Development,Research and Innovation(B49G680115).
文摘Silicon stands as a key anode material in lithium-ion battery ascribing to its high energy density.Nevertheless,the poor rate performance and limited cycling life remain unresolved through conventional approaches that involve carbon composites or nanostructures,primarily due to the un-controllable effects arising from the substantial formation of a solid electrolyte interphase(SEI)during the cycling.Here,an ultra-thin and homogeneous Ti doping alumina oxide catalytic interface is meticulously applied on the porous Si through a synergistic etching and hydrolysis process.This defect-rich oxide interface promotes a selective adsorption of fluoroethylene carbonate,leading to a catalytic reaction that can be aptly described as“molecular concentration-in situ conversion”.The resultant inorganic-rich SEI layer is electrochemical stable and favors ion-transport,particularly at high-rate cycling and high temperature.The robustly shielded porous Si,with a large surface area,achieves a high initial Coulombic efficiency of 84.7%and delivers exceptional high-rate performance at 25 A g^(−1)(692 mAh g^(−1))and a high Coulombic efficiency of 99.7%over 1000 cycles.The robust SEI constructed through a precious catalytic layer promises significant advantages for the fast development of silicon-based anode in fast-charging batteries.
基金supported by the National Natural Science Foundation of China(Nos.62025403 and U23A20354)the Natural Science Foundation of Zhejiang Province(LD22E020001)+1 种基金“Pioneer”and“Leading Goose”R&D Program of Zhejiang(2022C01215,2024C01055)the Fundamental Research Funds for the Central Universities(226-2022-00200).
文摘Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.
基金Project supported by the Major Program of the National Natural Science Foundation of China (Grant No.22393904)the National Key Research and Development Program of China (Grant No.2022YFB2502200)+1 种基金Beijing Municipal Science&Technology Commission (Grant No.Z221100006722015)the New Energy Vehicle Power Battery Life Cycle Testing and Verification Public Service Platform Project (Grant No.2022-235-224)。
文摘Silicon(Si)is a competitive anode material owing to its high theoretical capacity and low electrochemical potential.Recently,the prospect of Si anodes in solid-state batteries(SSBs)has been proposed due to less solid electrolyte interphase(SEI)formation and particle pulverization.However,major challenges arise for Si anodes in SSBs at elevated temperatures.In this work,the failure mechanisms of Si-Li_(6)PS_(5)Cl(LPSC)composite anodes above 80℃are thoroughly investigated from the perspectives of interface stability and(electro)chemo-mechanical effect.The chemistry and growth kinetics of Lix Si|LPSC interphase are demonstrated by combining electrochemical,chemical and computational characterizations.Si and/or Si–P compound formed at Lix Si|LPSC interface prove to be detrimental to interface stability at high temperatures.On the other hand,excessive volume expansion and local stress caused by Si lithiation at high temperatures damage the mechanical structure of Si-LPSC composite anodes.This work elucidates the behavior and failure mechanisms of Si-based anodes in SSBs at high temperatures and provides insights into upgrading Si-based anodes for application in SSBs.
文摘By inserting a thin highly doped crystalline silicon layer between the base region and amorphous silicon layer in an interdigitated back-contact （IBC） silicon solar cell, a new passivation layer is investigated. The passivation layer performance is characterized by numerical simulations. Moreover, the dependence of the output parameters of the solar cell on the additional layer parameters （doping concentration and thickness） is studied. By optimizing the additional passivation layer in terms of doping concentration and thickness, the power conversion efficiency could be improved by a factor of 2.5%, open circuit voltage is increased by 30 mV and the fill factor of the solar cell by 7.4%. The performance enhancement is achieved due to the decrease of recombination rate, a decrease in solar cell resistivity and improvement of field effect passivation at heterojunction interface. The above-mentioned results are compared with reported results of the same conventional interdigitated back-contact silicon solar cell structure. Furthermore, the effect of a-Si：H/c-Si interface defect density on IBC silicon solar cell parameters with a new passivation layer is studied. The additional passivation layer also reduces the sensitivity of output parameter of solar cell to interface defect density.
基金supported by the National Natural Science Foundation of China(Nos.61665012,61575168 and 11504313)the International Science Cooperation Project of the Ministry of Education of the People’s Republic of China(No.2016–2196)
文摘One problem associated with microcavity devices is the significant difference between the reflection spectra of fabricated porous silicon microcavity(PSM) devices and those obtained by theoretical calculation of ideal microcavity devices.To address this problem, studies were carried out to determine the effects of the refractive index dispersion, the absorption of the porous silicon layer and the fluctuation of the dielectric interface on the reflection spectra of PSM devices.The results are in good agreement with those obtained experimentally from the fabricated PSM devices, which provides a theoretical basis for the design of PSM sensors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51361022 and 61574072)the Postdoctoral Science Foundation of Jiangxi Province,China(Grant No.2015KY12)
文摘Intrinsic hydrogenated amorphous silicon（a-Si：H） film is deposited on n-type crystalline silicon（c-Si） wafer by hotwire chemical vapor deposition（HWCVD） to analyze the amorphous/crystalline heterointerface passivation properties.The minority carrier lifetime of symmetric heterostructure is measured by using Sinton Consulting WCT-120 lifetime tester system,and a simple method of determining the interface state density（D_（it）） from lifetime measurement is proposed.The interface state density（D_（it）） measurement is also performed by using deep-level transient spectroscopy（DLTS） to prove the validity of the simple method.The microstructures and hydrogen bonding configurations of a-Si：H films with different hydrogen dilutions are investigated by using spectroscopic ellipsometry（SE） and Fourier transform infrared spectroscopy（FTIR） respectively.Lower values of interface state density（D_（it）） are obtained by using a-Si：H film with more uniform,compact microstructures and fewer bulk defects on crystalline silicon deposited by HWCVD.
基金supported by the National Natural Science Foundation of China Projects(Nos.52271213,52202299).
文摘Micro-silicon(Si)anode that features high theoretical capacity and fine tap density is ideal for energy-dense lithiumion batteries.However,the substantial localized mechanical strain caused by the large volume expansion often results in electrode disintegration and capacity loss.Herein,a microporous Si anode with the SiO_(x)/C layer functionalized all-surface and high tap density(~0.65 g cm^(-3))is developed by the hydrolysis-driven strategy that avoids the common use of corrosive etchants and toxic siloxane reagents.The functionalized inner pore with superior structural stability can effectively alleviate the volume change and enhance the electrolyte contact.Simultaneously,the outer particle surface forms a continuous network that prevents electrolyte parasitic decomposition,disperses the interface stress of Si matrix and facilitates electron/ion transport.As a result,the micron-sized Si anode shows only~9.94 GPa average stress at full lithiation state and delivers an impressive capacity of 901.1 mAh g^(-1)after 500 cycles at 1 A g^(-1).It also performs excellent rate performance of 1123.0 mAh g^(-1)at 5 A g^(-1)and 850.4 at 8 A g^(-1),far exceeding most of reported literatures.Furthermore,when paired with a commercial LiNi_(0.8)Co_(0.1)Mn_(0.1)O_(2),the pouch cell demonstrates high capacity and desirable cyclic performance.
文摘Silicon carbide nanofibers grew on the surface of carbon fibers of a unidirectional carbon preform by CCVD and then chemical vapor infiltration was used to densify the preform to get the SiCNF-C/C composite. The effects of silicon carbide nanofibers on the microstructure of the pyrolytic carbon and the thermal conductivity of the SiCNF-C/C composite were investigated. Results show that silicon carbide nanofibers on the surface of carbon fibers induce the deposition of high texture pyrolytic carbon around them. The interface bonding between carbon fibers and pyrolytic carbon is well adjusted. So the efficiency of heat transfer in the interface of the composite is well enhanced. The thermal conductivity of the SiCNF-C/C composite is greater than that of the C/C composite, especially the thermal conductivity perpendicular to the fiber axis.
文摘Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.
基金supported by the National Natural Science Foundation of China(5197219862133007)the Taishan Scholars Program of Shandong Province(tsqn201812002,ts20190908)+1 种基金the Shenzhen Fundamental Research Program(JCYJ20190807093405503)The Natural Science Foundation of Shandong Province(No.ZR2020JQ19)。
文摘Silicon(Si)has been studied as a promising alloying type anode for lithium-ion batteries due to its high specific capacity,low operating potential and abundant resources.Nevertheless,huge volume expansion during alloying/dealloying processes and low electronic conductivity of Si anodes restrict their electrochemical performance.Thus,carbon(C)materials with special physical and chemical properties are applied in Si anodes to effectively solve these problems.This review focuses on current status in the exploration of Si/C anodes,including the lithiation mechanism and solid electrolyte interface formation,various carbon sources in Si/C anodes,such as traditional carbon sources(graphite,pitch,biomass),and novel carbon sources(MXene,graphene,MOFs-derived carbon,graphdiyne,etc.),as well as interfacial bonding modes of Si and C in the Si/C anodes.Finally,we summarize and prospect the selection of carbonaceous materials,structural design and interface control of Si/C anodes,and application of Si/C anodes in all-solid-state lithium-ion batteries and sodium-ion batteries et al.This review will help researchers in the design of novel Si/C anodes for rechargeable batteries.
基金supported by the National Natural Science Foundation of China (Grant No 10764002)
文摘Stimulated photoluminescence （PL） emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role.
基金Project(12C0379) supported by Scientific Research Fund of Hunan Province,China
文摘Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176044 and 11074224)the Science and Technology Project for Innovative Scientist of Henan Province,China(Grant No.1142002510017)the Science and Technology Project on Key Problems of Henan Province,China(Grant No.082101510007)
文摘The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.
文摘The microstructure of SiC whisker reinforced aluminium alloy (SiC_w/Al) composite is reviewed,and the SiC-Al interface in SiC_w/Al composite is especially discussed,The main contents are morphology of the aluminium matrix in SiC_w/Al composite;microstructures and defects of SiC whiskers in SiC_w/Al composite and bonding mechanisms of the SiC-Al interface in SiC_w/Al com- posite.
基金supported by the National High Technology Research and Development Program of China(Grant No.2012AA050301)Scientific Research of Hebei Education Department,China(Grant No.QN2017135)
文摘P-type silicon heterojunction（SHJ） solar cells with a-SiC：H（n） emitters were studied by numerical computer simulation in this paper. The influence of interface states, conduction band offset, and front contact on the performance of a-SiC：H（n）/c-Si（p） SHJ solar cells was investigated systematically. It is shown that the open circuit voltage（Voc） and fill factor（F F） are very sensitive to these parameters. In addition, by analyzing equilibrium energy band diagram and electric field distribution, the influence mechanisms that interface states, conduction band offset, and front contact impact on the carrier transport, interface recombination and cell performance were studied in detail. Finally, the optimum parameters for the a-SiC：H（n）/c-Si（p） SHJ solar cells were provided. By employing these optimum parameters, the efficiency of SHJ solar cell based on p-type c-Si was significantly improved.
基金the funding support from National Key R&D Program of China(2023YFB2408100)Chinese Academy of Sciences(CAS)Project for Young Scientists in Basic Research(YSBR-098)+2 种基金National Innovative Talents Program(GG2090007001)CAS Program(KJ2090130001)USTC Startup Program(KY2090000044).
文摘Silicon is considered one of the most promising anode materials owing to its high theoretical energy density,however,the volume expansion/contraction during electrochemical lithiation/delithiation cycles leads to instability of the solid electrolyte interphase(SEI),which ultimately results in capacity degradation.Herein,the local stress and deformation evolution status of an SEI layer on an anode particle are investigated through a quantitative electrochemical-mechanical model.The impacts of structural uniformity,mechanical strength,and operating conditions on the stability of the SEI layer are investigated in detail.The simulation results demonstrate that when the silicon particle radius decreases from 800 nm to 600 and 400 nm,the failure time increases by 29%and 65%,respectively,of the original failure time;When the structural defect depth ratio is reduced from 0.6 to 0.4 and 0.2,the failure time increases by 72%and 132%,respectively;For the discharge rate,the condition at 0.1 C has 34%and 139%longer time to failure than that at 0.2 C and 0.3 C,respectively.This work provides insight into the rational design of stable SEI layers and sheds light on possible methods for constructing silicon-based lithium-ion batteries with longer cycling lives.
