Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX co...Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX comer rounding equations have been derived based on an assumption that the comer rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the comer rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed comer rounding model is practical and accurate. Key words： SPICE model; MOSFETs; poly and active; comer rounding; nanometer technology展开更多
文摘Abstract： This paper presents a novel poly （PC） and active （RX） comer rounding modeling approach to SPICE simulations. A set of specially designed structures was used for measurement data collection. PC and RX comer rounding equations have been derived based on an assumption that the comer rounding area is a fragment of a circle. The equations were modified to reflect the gouging effect of physical silicon wafers. The modified general equations were implemented in the SPICE model to enable the model to describe the comer rounding effect. The good fittings between the SPICE model simulation results and the silicon data demonstrated in this paper proved that the designed comer rounding model is practical and accurate. Key words： SPICE model; MOSFETs; poly and active; comer rounding; nanometer technology
