Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silico...Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).展开更多
According to the electrochemical analysis, the corrosion inhibition efficiency of 5-methyl-lH-benzotriazole （m-BTA） is higher than that of benzotrizaole （BTA）. The inhibition capability of the m-BTA passive film f...According to the electrochemical analysis, the corrosion inhibition efficiency of 5-methyl-lH-benzotriazole （m-BTA） is higher than that of benzotrizaole （BTA）. The inhibition capability of the m-BTA passive film formed in hydroxyethylidenediphosphonic acid （HEDP） electrolyte containing both m-BTA and chloride ions is superior to that formed in m-BTA-alone electrolyte, even at a high anodic potential. The results of electrical impedance spectroscopy, nano-scratch experiments and energy dispersive analysis of X-ray （EDAX） indicate that the enhancement of m-BTA inhibition capability may be due to the increasing thickness of passive film. Furthermore, X-ray photoelectron spectrometry （XPS） analysis indicates that the increase in passive film thickness can be attributed to the incorporation of C1 into the m-BTA passive film and the formation of [Cu（I）CI（rn-BTA）], polymer film on Cu surface. Therefore, the introduction of C1- into m-BTA-containing HEDP electrolyte is effective to enhance the passivation capability of m-BTA passive film, thus extending the operating potential window.展开更多
In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two s...In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.展开更多
In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration ...In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.展开更多
The goal of this brief partly review paper is to summarize the results of the works published over the last few years regarding the origin of the out-of-plane distortions (puckering) of heterocyclic compounds. In all ...The goal of this brief partly review paper is to summarize the results of the works published over the last few years regarding the origin of the out-of-plane distortions (puckering) of heterocyclic compounds. In all the papers devoted to this problem, it is shown that the instability of planar configurations of heterocyclic molecules leading to symmetry breaking and distortions is induced by the pseudo Jahn-Teller effect (PJTE). Special attention in this work is paid to the mechanism of suppression and enhancement of the PJTE distortions of heterocycles by oxidation, reduction, and chemical substitutions. It is demonstrated that oxidation of 1,4-dithiine containing compounds leads to suppression of the PJTE and to restoration of their planar nuclear configurations. An example of a dibenzo[1,2]dithiine molecule is used to demonstrate the mechanism of enhancement of the PJTE by reduction. It is shown that the reduction of the neutral C12H8S2 molecule up to the dianion (C12H8S2)2- enhances the PJTE, followed by the S-S bond cleavage and significant structural distortions of the system. The change of the PJTE by chemical substitutions, accompanied either by puckering or by planarization of heterocyclic compounds, is discussed using as examples 1,4-ditinine and its S-oxygenated derivatives.展开更多
This study presents an improvement of high dynamic range contact-type capacitive displacement sensor by applying planarization. The sensor is called the contact-type linear encoder-like capacitive displacement sensor ...This study presents an improvement of high dynamic range contact-type capacitive displacement sensor by applying planarization. The sensor is called the contact-type linear encoder-like capacitive displacement sensor (CLECDiS), is a nano-meter-resolution sensor with a wide dynamic range. However, height differences due to patterned electrodes may cause a variety of problems or performance degradation. In devices of two glass wafer surfaces with patterned structures assembled face-to-face and in sliding contact, the heights of the patterns crucially affect their performance and practicality, so it should be planarized for reducing the problem. A number of techniques for planarizing glass wafer surfaces with patterned chrome electrodes were evaluated and the following three were selected as adequate: lift-off, etch-back, and chemical mechanical polishing (CMP). The fabricated samples showed that CMP provided the best planarization. CMP was successfully employed to produce CLECDiS with improved signal reliability due to reduced collisions between electrodes.展开更多
The evaluation methods of planarization capability of copper slurry are investigated.Planarization capability and material removal rate are the most essential properties of slurry.The goal of chemical mechanical polis...The evaluation methods of planarization capability of copper slurry are investigated.Planarization capability and material removal rate are the most essential properties of slurry.The goal of chemical mechanical polishing(CMP) is to achieve a flat and smooth surface.Planarization capability is the elimination capability of the step height on the copper pattern wafer surface,and reflects the passivation capability of the slurry to a certain extent.Through analyzing the planarization mechanism of the CMP process and experimental results,the planarization capability of the slurry can be evaluated by the following five aspects:pressure sensitivity,temperature sensitivity,static etch rate,planarization efficiency and saturation properties.展开更多
Chemical mechanical planarization(CMP)has become one of the most critical processes in semiconductor device fabrication to achieve global planarization.To achieve an efficient global planarization for device node dime...Chemical mechanical planarization(CMP)has become one of the most critical processes in semiconductor device fabrication to achieve global planarization.To achieve an efficient global planarization for device node dimensions of less than 32 nm,a comprehensive understanding of the physical,chemical,and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential.During the CMP process,some issues such as film delamination,scratching,dishing,erosion,and corrosion can generate defects which can adversely affect the yield and reliability.In this article,an overview of material removal mechanism of CMP process,investigation of the scratch formation behavior based on polishing process conditions and consumables,scratch formation mechanism and the scratch inspection tools were extensively reviewed.The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed.The current research trends in the scratch formation,based on modeling perspective were also discussed.展开更多
The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkal...The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors（Benzotriazole,BTA）.The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.展开更多
Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST...Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.展开更多
The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acid...The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.展开更多
A novel alkaline copper slurry that possesses a relatively high planarization performance is investigated under a low abrasive concentration. Based on the action mechanism of CMP, the feasibility of using one type of ...A novel alkaline copper slurry that possesses a relatively high planarization performance is investigated under a low abrasive concentration. Based on the action mechanism of CMP, the feasibility of using one type of slurry in copper bulk elimination process and residual copper elimination process, with different process parameters, was analyzed. In addition, we investigated the regular change of abrasive concentration effect on cop- per and tantalum removal rate and within wafer non-uniformity （WIWNU） in CMP process. When the abrasive concentration is 3 wt%, in bulk elimination process, the copper removal rate achieves 6125 ~/min, while WIWNU is 3.5%, simultaneously. In residual copper elimination process, the copper removal rate is approximately 2700 A/min, while WIWNU is 2.8%. Nevertheless, the tantalum removal rate is 0 A./min, which indicates that barrier layer isn＇t elinainated in residual copper elimination process. The planarization experimental results show that an excellent planarization performance is obtained with a relatively high copper removal rate in bulk elimination process. Meanwhile, atier residual copper elimination process, the dishing value increased inconspicuously, in a control- lable range, and the wafer surface roughness is only 0.326 nm （sq 〈 1 nm） alter polishing. By comparison, the planarization performance and surface quality of alkaline slurry show almost no major differences with two kinds of commercial acid slurries after polishing. All experimental results are conducive to research and improvement of alkaline slurry in the future.展开更多
This study reports a new weakly alkaline slurry for copper chemical mechanical planarization （CMP）, it can achieve a high planarization efficiency at a reduced down pressure of 1.0 psi. The slurry is studied through...This study reports a new weakly alkaline slurry for copper chemical mechanical planarization （CMP）, it can achieve a high planarization efficiency at a reduced down pressure of 1.0 psi. The slurry is studied through the polish rate, planarization, copper surface roughness and stability. The copper polishing experiment result shows that the polish rate can reach 10032 A/rain. From the multi-layers copper CMP test, a good result is obtained, that is a big step height （10870 A） that can be eliminated in just 35 s, and the copper root mean square surface roughness （sq） is very low （〈 1 rim）. Apart from this, compared with the alkaline slurry researched before, it has a good progress on stability of copper polishing rate, stable for 12 h at least. All the results presented here are relevant for further developments in the area of copper CMP.展开更多
Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing.Here we report using new yttrium oxide(Y_(2)O_(3))nanosheets as slurry abrasives for ...Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing.Here we report using new yttrium oxide(Y_(2)O_(3))nanosheets as slurry abrasives for chemical-mechanical planarization(CMP)of copper.Results showed that the global planarization was improved by 30%using a slurry containing Y_(2)O_(3) nanosheets in comparison with a standard industrial slurry.During CMP,the two-dimensional square shaped Y_(2)O_(3) nanosheet is believed to induce the low friction,the better rheological performance,and the laminar flow leading to the decrease in the within-wafer-non-uniformity,surface roughness,as well as dishing.The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.展开更多
An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR...An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR） and surface quality（RMS roughness） have been studied. The effect of polishing pressure on the AFCMP of the（1122） Al N surface has been compared with that of the（1122） Al Ga N surface. The maximum MRR has been found to be 562 nm/h for the semi-polar（1122） Al N surface, under the experimental conditions of 38 k Pa pressure,90 rpm platen velocity, 30 rpm carrier velocity, slurry p H 3 and 0.4 M oxidizer concentration. The best root mean square（RMS） surface roughness of 1.2 nm and 0.7 nm, over a large scanning area of 0.70×0.96 mm^2, has been achieved on AFCMP processed semi-polar（1122） AlN and（AlGaN） surfaces using optimized slurry chemistry and processing parameters.展开更多
Liquid crystal Pacharatnam-Berry phase optical elements(PBOEs)have found promising applications in augmented reality and virtual reality because of their slim formfactor,lightweight,and high optical efficiency.However...Liquid crystal Pacharatnam-Berry phase optical elements(PBOEs)have found promising applications in augmented reality and virtual reality because of their slim formfactor,lightweight,and high optical efficiency.However,chromatic aberration remains a serious longstanding problem for diffractive optics,hindering their broader adoption.To overcome the chromatic aberrations for red,green and blue(RGB)light sources,in this paper,we propose a counterintuitive multi-twist structure to achieve narrowband PBOEs without crosstalk,which plays a vital role to eliminate the chromatic aberration.The performance of our designed and fabricated narrowband Pacharatnam-Berry lenses(PBLs)aligns well with our simulation results.Furthermore,in a feasibility demonstration experiment using a laser projector,our proposed PBL system indeed exhibits a diminished chromatic aberration as compared to a broadband PBL.Additionally,polarization raytracing is implemented to demonstrate the versatility of the multi-twist structure for designing any RGB wavelengths with high contrast ratios.This analysis explores the feasibility of using RGB laser lines and quantum dot light-emitting diodes.Overall,our approach enables high optical efficiency,low fabrication complexity,and high degree of design freedom to accommodate any liquid crystal material and RGB light sources,holding immense potential for widespread applications of achromatic PBOEs.展开更多
The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on parti...The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.展开更多
A novel substrate integrated microstrip to ultra-thin cavity filter transition operating in the W-band is proposed in this letter.The structure is a new method of connecting microstrip circuits and waveguide filters,a...A novel substrate integrated microstrip to ultra-thin cavity filter transition operating in the W-band is proposed in this letter.The structure is a new method of connecting microstrip circuits and waveguide filters,and this new structure enables a planar integrated transition from microstrip lines to ultra-thin cavity filters,thereby reducing the size of the transition structure and achieving miniaturization.The structure includes a conventional tapered microstrip transition structure,which guides the electromagnetic field from the microstrip line to the reduced-height dielectric-filled waveguide,and an air-filled matching cavity which is placed between the dielectric-filled waveguide and the ultra-thin cavity filter.The heights of the microstrip line,the dielectric-filled waveguide and the ultra-thin cavity filter are the same,enabling seamless integration within a planar radio-frequency(RF)circuit.To facilitate testing,mature finline transition structures are integrated at both ends of the microstrip line during fabrications.The simulation results of the fabricated microstrip to ultra-thin cavity filter transition with the finline transition structure,with a passband of 91.5-96.5 GHz,has an insertion loss of less than 1.9 dB and a return loss lower than-20 dB.And the whole structure has also been measured which achieves an insertion loss less than 2.6 dB and a return loss lower than-15 dB within the filter's passband,including the additional insertion loss introduced by the finline transitions.Finally,a W-band compact up-conversion module is designed,and the test results show that after using the proposed structure,the module achieves 95 dBc suppression of the 84 GHz local oscillator.It is also demonstrated that the structure proposed in this letter achieves miniaturization of the system integration without compromising the filter performance.展开更多
A graph G is called d-degenerate if every subgraph of G has a vertex of degree at most d.It was known that planar graphs are 5-degenerate and every planar graph without k-cycles for some prescribed k∈{3,5,6}is 3-dege...A graph G is called d-degenerate if every subgraph of G has a vertex of degree at most d.It was known that planar graphs are 5-degenerate and every planar graph without k-cycles for some prescribed k∈{3,5,6}is 3-degenerate.In this paper,we show that if G is a planar graph without kites and 9-or 10-cycles,then G is 3-degenerate,hence 4-choosable and list vertex 2-arborable.展开更多
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).
基金Project(50975058) supported by the National Natural Science Foundation of China
文摘According to the electrochemical analysis, the corrosion inhibition efficiency of 5-methyl-lH-benzotriazole （m-BTA） is higher than that of benzotrizaole （BTA）. The inhibition capability of the m-BTA passive film formed in hydroxyethylidenediphosphonic acid （HEDP） electrolyte containing both m-BTA and chloride ions is superior to that formed in m-BTA-alone electrolyte, even at a high anodic potential. The results of electrical impedance spectroscopy, nano-scratch experiments and energy dispersive analysis of X-ray （EDAX） indicate that the enhancement of m-BTA inhibition capability may be due to the increasing thickness of passive film. Furthermore, X-ray photoelectron spectrometry （XPS） analysis indicates that the increase in passive film thickness can be attributed to the incorporation of C1 into the m-BTA passive film and the formation of [Cu（I）CI（rn-BTA）], polymer film on Cu surface. Therefore, the introduction of C1- into m-BTA-containing HEDP electrolyte is effective to enhance the passivation capability of m-BTA passive film, thus extending the operating potential window.
基金This project is supported by National Basic Research Program of China (973 Program, N0.2003CB716201)National Natural Science Foundation of China (No.50575131)Science Foundation of Shanghai Municipal Commission of Science and Technology, China(No.0452nm013).
文摘In order to get atomic smooth rigid disk substrate surface, ultra-fined alumina slurry and nanometer silica slurry are prepared, and two steps chemical-mechanical polishing （CMP） of rigid disk substrate in the two slurries are studied. The results show that, during the first step CMP in the alumina slurry, a high material removal rate is reached, and the average roughness （Ra） and the average waviness （Wa） of the polished surfaces can be decreased from previous 1.4 nm and 1.6 nm to about 0.6 nm and 0.7 nm, respectively. By using the nanometer silica slurry and optimized polishing process parameters in the second step CMP, the Ra and the Wa of the polished surfaces can be further reduced to 0.038 nm and 0.06 am, respectively. Atom force microscopy （AFM） analysis shows that the final polished surfaces are ultra-smooth without micro-defects.
基金Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004)the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003)+2 种基金the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003,61006087, 61076121, 61176122, and 61106001)the Science and Technology Council of Shanghai, China (Grant Nos. 11DZ2261000 and 11QA1407800)the Chinese Academy of Sciences (Grant No. 20110490761)
文摘In this paper, chemical mechanical planarization （CMP） of amorphous Ge2Sb2Te5 （a-GST） in acidic H2O2 slurry is investigated. It was found that the removal rate of a-GST is strongly dependent on H2O2 concentration and gradually increases with the increase in H2O2 concentration, but the static etch rate first increases and then slowly decreases with the increase in H2O2 concentration. To understand the chemical reaction behavior of H2O2 on the a-GST surface, the potentiodynamic polarization curve, surface morphology and cross-section of a-GST immersed in acidic slurry are measured and the results reveal that a-GST exhibits a from active to passive behavior for from low to high concentration of H2O2. Finally, a possible removal mechanism of a-GST in different concentrations of H2O2 in the acidic slurry is described.
文摘The goal of this brief partly review paper is to summarize the results of the works published over the last few years regarding the origin of the out-of-plane distortions (puckering) of heterocyclic compounds. In all the papers devoted to this problem, it is shown that the instability of planar configurations of heterocyclic molecules leading to symmetry breaking and distortions is induced by the pseudo Jahn-Teller effect (PJTE). Special attention in this work is paid to the mechanism of suppression and enhancement of the PJTE distortions of heterocycles by oxidation, reduction, and chemical substitutions. It is demonstrated that oxidation of 1,4-dithiine containing compounds leads to suppression of the PJTE and to restoration of their planar nuclear configurations. An example of a dibenzo[1,2]dithiine molecule is used to demonstrate the mechanism of enhancement of the PJTE by reduction. It is shown that the reduction of the neutral C12H8S2 molecule up to the dianion (C12H8S2)2- enhances the PJTE, followed by the S-S bond cleavage and significant structural distortions of the system. The change of the PJTE by chemical substitutions, accompanied either by puckering or by planarization of heterocyclic compounds, is discussed using as examples 1,4-ditinine and its S-oxygenated derivatives.
文摘This study presents an improvement of high dynamic range contact-type capacitive displacement sensor by applying planarization. The sensor is called the contact-type linear encoder-like capacitive displacement sensor (CLECDiS), is a nano-meter-resolution sensor with a wide dynamic range. However, height differences due to patterned electrodes may cause a variety of problems or performance degradation. In devices of two glass wafer surfaces with patterned structures assembled face-to-face and in sliding contact, the heights of the patterns crucially affect their performance and practicality, so it should be planarized for reducing the problem. A number of techniques for planarizing glass wafer surfaces with patterned chrome electrodes were evaluated and the following three were selected as adequate: lift-off, etch-back, and chemical mechanical polishing (CMP). The fabricated samples showed that CMP provided the best planarization. CMP was successfully employed to produce CLECDiS with improved signal reliability due to reduced collisions between electrodes.
基金supported by the Special Project Items No.2 in National Long-term Technology Development Plan,China(No.2009ZX02308)
文摘The evaluation methods of planarization capability of copper slurry are investigated.Planarization capability and material removal rate are the most essential properties of slurry.The goal of chemical mechanical polishing(CMP) is to achieve a flat and smooth surface.Planarization capability is the elimination capability of the step height on the copper pattern wafer surface,and reflects the passivation capability of the slurry to a certain extent.Through analyzing the planarization mechanism of the CMP process and experimental results,the planarization capability of the slurry can be evaluated by the following five aspects:pressure sensitivity,temperature sensitivity,static etch rate,planarization efficiency and saturation properties.
文摘Chemical mechanical planarization(CMP)has become one of the most critical processes in semiconductor device fabrication to achieve global planarization.To achieve an efficient global planarization for device node dimensions of less than 32 nm,a comprehensive understanding of the physical,chemical,and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential.During the CMP process,some issues such as film delamination,scratching,dishing,erosion,and corrosion can generate defects which can adversely affect the yield and reliability.In this article,an overview of material removal mechanism of CMP process,investigation of the scratch formation behavior based on polishing process conditions and consumables,scratch formation mechanism and the scratch inspection tools were extensively reviewed.The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed.The current research trends in the scratch formation,based on modeling perspective were also discussed.
基金supported by the Major National Science and Technology Special Projects,China(No.2009ZX02308)the Tianjin Natural Science Foundation of China(No.lOJCZDJC 15500)+1 种基金the National Natural Science Foundation of China(No.10676008)the Fund Project of Hebei Provincial Department of Education,China(No.2011128)
文摘The chemical mechanical polishing/planarization（CMP） performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate（DR） and the polish rate（PR） show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors（Benzotriazole,BTA）.The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal.
基金Project supported by the National Key Basic Research Program of China(Nos.2010CB934300,2011CBA00607,2011CB9328004)the National Integrated Circuit Research Program of China(No.2009ZX02023-003)+2 种基金the National Natural Science Foundation of China(Nos. 60906004,60906003,61006087,61076121,61176122,61106001)the Science and Technology Council of Shanghai(Nos.11DZ2261000,11OA1407800.12nm0503701)the Chinese Academy of Sciences(No.20110490761)
文摘Chemical mechanical planarization（CMP） of amorphous Ge_2Sb_2Te_5（a-GST） is investigated using two typical soft pads（politex REG and AT） in acidic slurry.After CMP,it is found that the removal rate（RR） of a-GST increases with an increase of runs number for both pads.However,it achieves the higher RR and better surface quality of a-GST for an AT pad.The in-situ sheet resistance（R_s） measure shows the higher R_s of a-GST polishing can be gained after CMP using both pads and the high R_s is beneficial to lower the reset current for the PCM cells. In order to find the root cause of the different RR of a-GST polishing with different pads,the surface morphology and characteristics of both new and used pads are analyzed,it shows that the AT pad has smaller porosity size and more pore counts than that of the REG pad,and thus the AT pad can transport more fresh slurry to the reaction interface between the pad and a-GST,which results in the high RR of a-GST due to enhanced chemical reaction.
基金supported by the Special Project Items No.2 in National Long-term Technology Development Plan,China(No.2009ZX02308)
文摘The planarization mechanism of alkaline copper slurry is studied in the chemical mechanical polishing （CMP） process from the perspective of chemical mechanical kinetics.Different from the international dominant acidic copper slurry,the copper slurry used in this research adopted the way of alkaline technology based on complexation. According to the passivation property of copper in alkaline conditions,the protection of copper film at the concave position on a copper pattern wafer surface can be achieved without the corrosion inhibitors such as benzotriazole（BTA）,by which the problems caused by BTA can be avoided.Through the experiments and theories research,the chemical mechanical kinetics theory of copper removal in alkaline CMP conditions was proposed. Based on the chemical mechanical kinetics theory,the planarization mechanism of alkaline copper slurry was established. In alkaline CMP conditions,the complexation reaction between chelating agent and copper ions needs to break through the reaction barrier.The kinetic energy at the concave position should be lower than the complexation reaction barrier,which is the key to achieve planarization.
基金supported by the 02 Major Program of the National Medium–Long Term Science and Technology Development Project of China(No.2009ZX02308)
文摘A novel alkaline copper slurry that possesses a relatively high planarization performance is investigated under a low abrasive concentration. Based on the action mechanism of CMP, the feasibility of using one type of slurry in copper bulk elimination process and residual copper elimination process, with different process parameters, was analyzed. In addition, we investigated the regular change of abrasive concentration effect on cop- per and tantalum removal rate and within wafer non-uniformity （WIWNU） in CMP process. When the abrasive concentration is 3 wt%, in bulk elimination process, the copper removal rate achieves 6125 ~/min, while WIWNU is 3.5%, simultaneously. In residual copper elimination process, the copper removal rate is approximately 2700 A/min, while WIWNU is 2.8%. Nevertheless, the tantalum removal rate is 0 A./min, which indicates that barrier layer isn＇t elinainated in residual copper elimination process. The planarization experimental results show that an excellent planarization performance is obtained with a relatively high copper removal rate in bulk elimination process. Meanwhile, atier residual copper elimination process, the dishing value increased inconspicuously, in a control- lable range, and the wafer surface roughness is only 0.326 nm （sq 〈 1 nm） alter polishing. By comparison, the planarization performance and surface quality of alkaline slurry show almost no major differences with two kinds of commercial acid slurries after polishing. All experimental results are conducive to research and improvement of alkaline slurry in the future.
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308)the Hebei Natural Science Foundation of China(No.F2012202094)
文摘This study reports a new weakly alkaline slurry for copper chemical mechanical planarization （CMP）, it can achieve a high planarization efficiency at a reduced down pressure of 1.0 psi. The slurry is studied through the polish rate, planarization, copper surface roughness and stability. The copper polishing experiment result shows that the polish rate can reach 10032 A/rain. From the multi-layers copper CMP test, a good result is obtained, that is a big step height （10870 A） that can be eliminated in just 35 s, and the copper root mean square surface roughness （sq） is very low （〈 1 rim）. Apart from this, compared with the alkaline slurry researched before, it has a good progress on stability of copper polishing rate, stable for 12 h at least. All the results presented here are relevant for further developments in the area of copper CMP.
基金The authors wish to acknowledge the support of TAMU-NSFC.
文摘Continued reduction in feature dimension in integrated circuits demands high degree of flatness after chemical mechanical polishing.Here we report using new yttrium oxide(Y_(2)O_(3))nanosheets as slurry abrasives for chemical-mechanical planarization(CMP)of copper.Results showed that the global planarization was improved by 30%using a slurry containing Y_(2)O_(3) nanosheets in comparison with a standard industrial slurry.During CMP,the two-dimensional square shaped Y_(2)O_(3) nanosheet is believed to induce the low friction,the better rheological performance,and the laminar flow leading to the decrease in the within-wafer-non-uniformity,surface roughness,as well as dishing.The application of the two-dimensional nanosheets as abrasive in CMP would increase the manufacturing yield of integrated circuits.
基金financial support from the Department of Science and Technology(DST),Government of India(No,SR/S2/Cmp-0009/2011)partial support from the Board of Research in Nuclear Sciences(BRNS),Department of Atomic Energy(DAE),Government of India(No.-34/14/43/2014-BRNS)with ATC
文摘An abrasive free chemical mechanical planarization（AFCMP） of semi-polar（1122） Al N surface has been demonstrated. The effect of slurry p H, polishing pressure, and platen velocity on the material removal rate（MRR） and surface quality（RMS roughness） have been studied. The effect of polishing pressure on the AFCMP of the（1122） Al N surface has been compared with that of the（1122） Al Ga N surface. The maximum MRR has been found to be 562 nm/h for the semi-polar（1122） Al N surface, under the experimental conditions of 38 k Pa pressure,90 rpm platen velocity, 30 rpm carrier velocity, slurry p H 3 and 0.4 M oxidizer concentration. The best root mean square（RMS） surface roughness of 1.2 nm and 0.7 nm, over a large scanning area of 0.70×0.96 mm^2, has been achieved on AFCMP processed semi-polar（1122） AlN and（AlGaN） surfaces using optimized slurry chemistry and processing parameters.
基金supports from the National Key Research and Development Program of China(2023YFB2806803)the National Natural Science Foundation of China(62075127).
文摘Liquid crystal Pacharatnam-Berry phase optical elements(PBOEs)have found promising applications in augmented reality and virtual reality because of their slim formfactor,lightweight,and high optical efficiency.However,chromatic aberration remains a serious longstanding problem for diffractive optics,hindering their broader adoption.To overcome the chromatic aberrations for red,green and blue(RGB)light sources,in this paper,we propose a counterintuitive multi-twist structure to achieve narrowband PBOEs without crosstalk,which plays a vital role to eliminate the chromatic aberration.The performance of our designed and fabricated narrowband Pacharatnam-Berry lenses(PBLs)aligns well with our simulation results.Furthermore,in a feasibility demonstration experiment using a laser projector,our proposed PBL system indeed exhibits a diminished chromatic aberration as compared to a broadband PBL.Additionally,polarization raytracing is implemented to demonstrate the versatility of the multi-twist structure for designing any RGB wavelengths with high contrast ratios.This analysis explores the feasibility of using RGB laser lines and quantum dot light-emitting diodes.Overall,our approach enables high optical efficiency,low fabrication complexity,and high degree of design freedom to accommodate any liquid crystal material and RGB light sources,holding immense potential for widespread applications of achromatic PBOEs.
基金Project supported by the Major National Science and Technology Special Projects(No.2009ZX02308)the Natural Science Foundation for the Youth of Hebei Province(Nos.F2012202094,F2015202267)the Outstanding Youth Science and Technology Innovation Fund of Hebei University of Technology(No.2013010)
文摘The replacement metal gate（RMG） defectivity performance control is very challenging in high-k metal gate（HKMG） chemical mechanical polishing（CMP）. In this study, three major defect types, including fall-on particles, micro-scratch and corrosion have been investigated. The research studied the effects of polishing pad,pressure, rotating speed, flow rate and post-CMP cleaning on the three kinds of defect, which finally eliminated the defects and achieved good surface morphology. This study will provide an important reference value for the future research of aluminum metal gate CMP.
基金Supported by the Fundamental Research Funds for the Central Universities(ZYGX2021J008)。
文摘A novel substrate integrated microstrip to ultra-thin cavity filter transition operating in the W-band is proposed in this letter.The structure is a new method of connecting microstrip circuits and waveguide filters,and this new structure enables a planar integrated transition from microstrip lines to ultra-thin cavity filters,thereby reducing the size of the transition structure and achieving miniaturization.The structure includes a conventional tapered microstrip transition structure,which guides the electromagnetic field from the microstrip line to the reduced-height dielectric-filled waveguide,and an air-filled matching cavity which is placed between the dielectric-filled waveguide and the ultra-thin cavity filter.The heights of the microstrip line,the dielectric-filled waveguide and the ultra-thin cavity filter are the same,enabling seamless integration within a planar radio-frequency(RF)circuit.To facilitate testing,mature finline transition structures are integrated at both ends of the microstrip line during fabrications.The simulation results of the fabricated microstrip to ultra-thin cavity filter transition with the finline transition structure,with a passband of 91.5-96.5 GHz,has an insertion loss of less than 1.9 dB and a return loss lower than-20 dB.And the whole structure has also been measured which achieves an insertion loss less than 2.6 dB and a return loss lower than-15 dB within the filter's passband,including the additional insertion loss introduced by the finline transitions.Finally,a W-band compact up-conversion module is designed,and the test results show that after using the proposed structure,the module achieves 95 dBc suppression of the 84 GHz local oscillator.It is also demonstrated that the structure proposed in this letter achieves miniaturization of the system integration without compromising the filter performance.
文摘A graph G is called d-degenerate if every subgraph of G has a vertex of degree at most d.It was known that planar graphs are 5-degenerate and every planar graph without k-cycles for some prescribed k∈{3,5,6}is 3-degenerate.In this paper,we show that if G is a planar graph without kites and 9-or 10-cycles,then G is 3-degenerate,hence 4-choosable and list vertex 2-arborable.
