In this study,the mechanism and characteristics of the responseαparticles and the damage caused by them in CMOS active pixel(APS)sensors were investigated.A detection and compensation algorithm for dead pixels caused...In this study,the mechanism and characteristics of the responseαparticles and the damage caused by them in CMOS active pixel(APS)sensors were investigated.A detection and compensation algorithm for dead pixels caused byαparticle ionizing radiation was proposed,and the effects of dead-pixel compensation algorithms were compared and analyzed under different parameter conditions.The experimental results show thatαparticle response signal has highest accuracy at 9 dB gain,with an obvious“target-ring”distribution.With increasing cumulative dose,the CMOS APS pedestal tends to saturation while dead pixels continue increasing.Though some pixel damage recovers through natural annealing,the dead-to-noise ratio increases with irradiation time,reaching 32.54%after 72 h.A hierarchical clustering dead-pixel detection method is proposed,categorizing pixels into two types:those within and outside the response event.A classification compensation strategy combining mean and majority filtering is proposed.This compensation algorithm can address dead-pixel interference without affectingαparticle radiation response data.When iterated multiple times and with integration time exceeding 6.31 ms,the number of dead pixels can be effectively reduced.展开更多
A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and succ...A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity...The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.展开更多
By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE envir...By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.展开更多
Purpose CMOS pixel sensor has become extremely attractive for future high-performance tracking devices.It has been proposed for the vertex detector at the Circular Electron Positron Collider,which will allow precision...Purpose CMOS pixel sensor has become extremely attractive for future high-performance tracking devices.It has been proposed for the vertex detector at the Circular Electron Positron Collider,which will allow precision measurements of the properties of the Higgs boson.To meet the stringent requirements for low power consumption,it is necessary to optimize the pixel sensor diode geometry to reach a high charge-over-capacitance ratio that allows reduction in analog power consumption.Methods Collection electrode size and footprint are two critical elements in sensor diode geometry and have deciding impacts on the charge collection performance.A prototype CMOS pixel sensor,named JadePix-1,has been developed with pixel sectors implemented with different electrode sizes and footprints,and its charge collection performance has been characterized with radioactive sources.Results Charge-to-voltage conversion gains for pixel sectors under test have been calibrated with low-energy X-rays.Characterization results have been obtained for equivalent noise charge(below 10e−),charge collection efficiency(around 40%),charge-over-capacitance ratio(above 0.015 V)and signal-to-noise ratio(higher than 55).Conclusion Small collection electrode size and large footprint are preferred to achieve high charge-over-capacitance ratio that promises low analog power consumption.Ongoing studies on sensor performance before and after irradiation,combined with this work,will conclude the diode geometry optimization.展开更多
Based on the study of noise performance in CMOS digital pixel sensor （DPS）, a mathematical model of noise is established with the pulse-width-modulation （PWM） principle. Compared with traditional CMOS image sensor...Based on the study of noise performance in CMOS digital pixel sensor （DPS）, a mathematical model of noise is established with the pulse-width-modulation （PWM） principle. Compared with traditional CMOS image sensors, the integration time is different and A/D conversion is implemented in each PWM DPS pixel. Then, the quantitative calculating formula of system noise is derived. It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region. In this model, photodiode shot noise does not vary with luminance, but dark current shot noise does. According to increasing photodiode capacitance and the comparator＇s reference voltage or optimizing the mismatch in the comparator, the total noise can be reduced. These results serve as a guideline for the design of PWM DPS.展开更多
The silicon pixel sensor（SPS） is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection（SRD）. In this paper, the design, fabrication, and characterizat...The silicon pixel sensor（SPS） is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection（SRD）. In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p＋-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm^2, full depletion voltage 〈 50 V and breakdown voltage〉 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high（〈 20% for X-ray photon energy 〉 10 keV） and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.展开更多
Background High-voltage CMOS is a promising technology for the pixel sensor of tracking detectors in the collider experiments.Extensive studies are being carried out by theATLASCollaboration to investigate the possibi...Background High-voltage CMOS is a promising technology for the pixel sensor of tracking detectors in the collider experiments.Extensive studies are being carried out by theATLASCollaboration to investigate the possibility of using theHV-CMOS technology in the HL-LHC upgrade of the ATLAS inner tracker detector.Purpose The CaRIBOu(Control and Readout Itk BOards)is a modular test system developed to test the HV-CMOS pixel sensor prototypes and demonstrators.Methods This test system consists of pixel sensor specific front-end chip boards,a control and readout board(CaR board),a central interface board and the back-end DAQ system.Currently,two DAQ solutions are available for the CaRIBOu system,one is based on the FELIX(front-end link eXchange)readout system and the other is based on the Gigabit Ethernet link.Results Various testbeam experiments have been carried out with the CaRIBOu system since 2015 for the pixel sensors fabricated by the AMS HV-CMOS 180 nm and 350 nm technologies.Conclusion The test results show that this test system is very flexible and could be adapted to the test of different pixel sensors with minimum effort,and the performance meets the testbeam requirements.展开更多
The reconstruction of the tracks of charged particles with high precision is crucial for HEP experiments to achieve their physics goals.The BESⅢdrift chamber,which is used as the tracking detector of the BESⅢexperim...The reconstruction of the tracks of charged particles with high precision is crucial for HEP experiments to achieve their physics goals.The BESⅢdrift chamber,which is used as the tracking detector of the BESⅢexperiment,has suffered from aging effects resulting in degraded tracking performance after operation for approximately 15 years.To preserve and enhance the tracking performance of BESⅢ,one of the proposals is to add one layer of a thin cylindrical CMOS pixel sensor based on state-of-the-art stitching technology between the beam pipe and the drift chamber.The improvement in the tracking performance of BESⅢwith such an additional pixel detector compared to that with only the existing drift chamber was studied using the modern common tracking software Acts,which provides a set of detector-agnostic and highly performant tracking algorithms that have demonstrated promising performance for a few high-energy physics and nuclear physics experiments.展开更多
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ...A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.展开更多
Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends...Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isola- tion structures are investigated. According to the different depths of photo-diode （PD） and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.展开更多
Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detecti...Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.展开更多
电子轰击有源像素传感器(electron bombardment active pixel sensor,EBAPS)的光响应非均匀性是指EBAPS中光电阴极被均匀光源照射时,不同像素输出灰度不一致的现象,尤其是在低光环境下,图像的非均匀性会使细节识别变得困难,影响后续图...电子轰击有源像素传感器(electron bombardment active pixel sensor,EBAPS)的光响应非均匀性是指EBAPS中光电阴极被均匀光源照射时,不同像素输出灰度不一致的现象,尤其是在低光环境下,图像的非均匀性会使细节识别变得困难,影响后续图像处理和分析的准确性。光响应非均匀性主要由光电阴极不同区域对光响应的差异、电子敏感互补金属氧化物半导体不同区域的电子倍增特性差异、各像素间对同一激励的响应差异以及读出电路中传输信道的差异性等因素导致。针对EBAPS的非均匀性问题,提出了一种基于EBAPS光电阴极响应、电子倍增以及像素响应非均匀性协同适配的测试方法。实验结果表明,该方法能够有效评价EBAPS的非均匀性,并且能够对器件的测试筛选和算法校正起到指导作用。展开更多
It is well-known that according the Dozier’s method, utilization of integral of Planks function in fusion of signals of two different channels of airborne radiometer makes it possible to compute such components of te...It is well-known that according the Dozier’s method, utilization of integral of Planks function in fusion of signals of two different channels of airborne radiometer makes it possible to compute such components of temperature field within one pixel as temperatures of the object and background. In the paper, the generalization of Dozier method is suggested. The suggested generalization of Dozier’s bispectral method named as biparametric method is applicable for static remote objects. In the suggested biparametric method, the measurements are carried out at the moments t<sub>1</sub> and t<sub>2</sub>. It is assumed that the object temperature reaches quantity T(t<sub>1</sub>) and T(t<sub>2</sub>) at these moments. On the bases of operational data of scanning infrared radiometer, the square area of one pixel can be calculated in dependence of distance between object and radiometer. This makes it possible to carry out location of static objects from two basis points using serial single wavelengths measurements of radiation emitted by the sub pixel object.展开更多
电子轰击型有源像素传感器(Electron Bombarded Active Pixel Sensor,EBAPS)作为一种数字化微光成像器件,以其成像系统具有小型化、低成本和低功耗的优势,以及在昼夜条件下连续拍摄时具备清晰成像的能力,成为微光成像领域的研究热点。...电子轰击型有源像素传感器(Electron Bombarded Active Pixel Sensor,EBAPS)作为一种数字化微光成像器件,以其成像系统具有小型化、低成本和低功耗的优势,以及在昼夜条件下连续拍摄时具备清晰成像的能力,成为微光成像领域的研究热点。文章基于国产某型EBAPS微光器件,利用FPGA作为核心处理器,完成了EBAPS器件驱动电路、图像处理和跟踪电路、显示电路的设计。同时,构建了满足昼夜复用的光学系统,搭建了一种小型化的手持成像跟踪系统。实验结果表明,该EBAPS昼夜成像系统可在1×10^(-4)~1×10^(4) lx照度条件下实现良好的成像和跟踪效果。展开更多
基金supported by the National Natural Science Foundation of China(No.11905102)Hunan Provincial Postgraduate Research and Innovation Project(No.QL20230234)。
文摘In this study,the mechanism and characteristics of the responseαparticles and the damage caused by them in CMOS active pixel(APS)sensors were investigated.A detection and compensation algorithm for dead pixels caused byαparticle ionizing radiation was proposed,and the effects of dead-pixel compensation algorithms were compared and analyzed under different parameter conditions.The experimental results show thatαparticle response signal has highest accuracy at 9 dB gain,with an obvious“target-ring”distribution.With increasing cumulative dose,the CMOS APS pedestal tends to saturation while dead pixels continue increasing.Though some pixel damage recovers through natural annealing,the dead-to-noise ratio increases with irradiation time,reaching 32.54%after 72 h.A hierarchical clustering dead-pixel detection method is proposed,categorizing pixels into two types:those within and outside the response event.A classification compensation strategy combining mean and majority filtering is proposed.This compensation algorithm can address dead-pixel interference without affectingαparticle radiation response data.When iterated multiple times and with integration time exceeding 6.31 ms,the number of dead pixels can be effectively reduced.
文摘A three-transistor active pixel sensor and its double sampling readout circuit implemented by a switch capacitor amplifier are designed. The circuit is embedded in a 64 × 64 pixel array CMOS image sensor and success-fully taped out with a Chartered 0.35μm process. The pixel pitch is 8μm × 8μm with a fill factor of 57%, the photo-sensitivity is 0.8V/（lux · s） ,and the dynamic range is 50dB. Theoretical analysis and test results indicate that as the process is scaled down, a smaller pixel pitch reduces the sensitivity. A deep junction n-well/p-substrate photodiode with a reasonable fill factor and high sensitivity are more appropriate for submicron processes.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金supported by the France-China Particle Physics Laboratory(FCPPL)the China Scholarship Council(CSC)grant.
文摘The time and efficiency of charge collection are the key factors of monolithic active pixel sensor devices for minimum ionizing particles tracking detection.In this paper,3D models of pixels with different resistivity epitaxial layers(epi-layers) are built and simulated using Synopsys-Sentaurus.The basic characteristics of detectors are evaluated,including electric potential,electric field,and depleted region.Results indicate that the high resistivity (HR) epi-layer is a better choice.Further,simulation results show that the key collection performance is significantly improved owing to a wider and stronger electric field in the N type HR epi-layer.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61874085)the Postdoctoral Research Funding Project of Shaanxi Province,China (Grant No. 2018BSHEDZZ41)。
文摘By using the MOS-based model established in this paper, the physical process of photoelectron generation, transfer,and storage in the four-transistor active pixel sensor(4 T-APS) pixels can be simulated in SPICE environment. The variable capacitance characteristics of double junctions in pinned photodiodes(PPDs) and the threshold voltage difference formed by channel nonuniform doping in transfer gates(TGs) are considered with this model. The charge transfer process of photogenerated electrons from PPDs to the floating diffusion(FD) is analyzed, and the function of nonuniform doping of TGs in suppressing charge injection back to PPDs is represented with the model. The optical and electrical characteristics of all devices in the pixel are effectively combined with the model. Moreover, the charge transfer efficiency and the voltage variation in PPD can be described with the model. Compared with the hybrid simulation in TCAD and the Verilog-A simulation in SPICE, this model has higher simulation efficiency and accuracy, respectively. The effectiveness of the MOS-based model is experimentally verified in a 3 μm test pixel designed in 0.11 μm CIS process.
基金the National Natural Science Foundation of China(Nos.11505207,11573028)the State Key Laboratory of Particle Detection and Electronics,the CAS Center for Excellence in Particle Physics(CCEPP)and the IHEP Innovation Fund and the International Partnership Program of Chinese Academy of Sciences.
文摘Purpose CMOS pixel sensor has become extremely attractive for future high-performance tracking devices.It has been proposed for the vertex detector at the Circular Electron Positron Collider,which will allow precision measurements of the properties of the Higgs boson.To meet the stringent requirements for low power consumption,it is necessary to optimize the pixel sensor diode geometry to reach a high charge-over-capacitance ratio that allows reduction in analog power consumption.Methods Collection electrode size and footprint are two critical elements in sensor diode geometry and have deciding impacts on the charge collection performance.A prototype CMOS pixel sensor,named JadePix-1,has been developed with pixel sectors implemented with different electrode sizes and footprints,and its charge collection performance has been characterized with radioactive sources.Results Charge-to-voltage conversion gains for pixel sectors under test have been calibrated with low-energy X-rays.Characterization results have been obtained for equivalent noise charge(below 10e−),charge collection efficiency(around 40%),charge-over-capacitance ratio(above 0.015 V)and signal-to-noise ratio(higher than 55).Conclusion Small collection electrode size and large footprint are preferred to achieve high charge-over-capacitance ratio that promises low analog power consumption.Ongoing studies on sensor performance before and after irradiation,combined with this work,will conclude the diode geometry optimization.
基金supported by the National Natural Science Foundation of China(Nos.60976030,61036004)
文摘Based on the study of noise performance in CMOS digital pixel sensor （DPS）, a mathematical model of noise is established with the pulse-width-modulation （PWM） principle. Compared with traditional CMOS image sensors, the integration time is different and A/D conversion is implemented in each PWM DPS pixel. Then, the quantitative calculating formula of system noise is derived. It is found that dark current shot noise is the dominant noise source in low light region while photodiode shot noise becomes significantly important in the bright region. In this model, photodiode shot noise does not vary with luminance, but dark current shot noise does. According to increasing photodiode capacitance and the comparator＇s reference voltage or optimizing the mismatch in the comparator, the total noise can be reduced. These results serve as a guideline for the design of PWM DPS.
基金Supported by Prefabrication Research of Beijing Advanced Photon Source(R&D for BAPS)National Natural Science Foundation of China(11335010)
文摘The silicon pixel sensor（SPS） is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection（SRD）. In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p＋-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm^2, full depletion voltage 〈 50 V and breakdown voltage〉 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high（〈 20% for X-ray photon energy 〉 10 keV） and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.
文摘Background High-voltage CMOS is a promising technology for the pixel sensor of tracking detectors in the collider experiments.Extensive studies are being carried out by theATLASCollaboration to investigate the possibility of using theHV-CMOS technology in the HL-LHC upgrade of the ATLAS inner tracker detector.Purpose The CaRIBOu(Control and Readout Itk BOards)is a modular test system developed to test the HV-CMOS pixel sensor prototypes and demonstrators.Methods This test system consists of pixel sensor specific front-end chip boards,a control and readout board(CaR board),a central interface board and the back-end DAQ system.Currently,two DAQ solutions are available for the CaRIBOu system,one is based on the FELIX(front-end link eXchange)readout system and the other is based on the Gigabit Ethernet link.Results Various testbeam experiments have been carried out with the CaRIBOu system since 2015 for the pixel sensors fabricated by the AMS HV-CMOS 180 nm and 350 nm technologies.Conclusion The test results show that this test system is very flexible and could be adapted to the test of different pixel sensors with minimum effort,and the performance meets the testbeam requirements.
基金supported by the National Natural Science Foundation of China(Nos.U2032203,12275296,12275297,12075142,12175256,12035009)National Key R&D Program of China(No.2020YFA0406302)。
文摘The reconstruction of the tracks of charged particles with high precision is crucial for HEP experiments to achieve their physics goals.The BESⅢdrift chamber,which is used as the tracking detector of the BESⅢexperiment,has suffered from aging effects resulting in degraded tracking performance after operation for approximately 15 years.To preserve and enhance the tracking performance of BESⅢ,one of the proposals is to add one layer of a thin cylindrical CMOS pixel sensor based on state-of-the-art stitching technology between the beam pipe and the drift chamber.The improvement in the tracking performance of BESⅢwith such an additional pixel detector compared to that with only the existing drift chamber was studied using the modern common tracking software Acts,which provides a set of detector-agnostic and highly performant tracking algorithms that have demonstrated promising performance for a few high-energy physics and nuclear physics experiments.
文摘A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.
基金Project supported by the National Key Research and Development Program of China(Grant No.NKRDP 2016YFA0202101)
文摘Photo-generated carriers may diffuse into the adjacent cells to form the electrical crosstalk, which is especially no- ticeable after the pixel cell size has been scaled down. The electrical crosstalk strongly depends on the structure and electrical properties of the photosensitive areas. In this work, time-dependent crosstalk effects considering different isola- tion structures are investigated. According to the different depths of photo-diode （PD） and isolation structure, the transport of photo-generated carriers is analyzed with different regions in the pixel cell. The evaluation of crosstalk is influenced by exposure time. Crosstalk can be suppressed by reducing the exposure time. However, the sensitivity and dynamic range of the image sensor need to be considered as well.
基金supported by the Plan for Science Innovation Talent of Henan Province(No.154100510007)the Natural and Science Foundation in Henan Province(No.162300410179)the Cultivation Foundation of Henan Normal University National Project(No.2017PL04)
文摘Complementary metal-oxide-semiconductor(CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points(radiation spots).The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.
文摘电子轰击有源像素传感器(electron bombardment active pixel sensor,EBAPS)的光响应非均匀性是指EBAPS中光电阴极被均匀光源照射时,不同像素输出灰度不一致的现象,尤其是在低光环境下,图像的非均匀性会使细节识别变得困难,影响后续图像处理和分析的准确性。光响应非均匀性主要由光电阴极不同区域对光响应的差异、电子敏感互补金属氧化物半导体不同区域的电子倍增特性差异、各像素间对同一激励的响应差异以及读出电路中传输信道的差异性等因素导致。针对EBAPS的非均匀性问题,提出了一种基于EBAPS光电阴极响应、电子倍增以及像素响应非均匀性协同适配的测试方法。实验结果表明,该方法能够有效评价EBAPS的非均匀性,并且能够对器件的测试筛选和算法校正起到指导作用。
文摘It is well-known that according the Dozier’s method, utilization of integral of Planks function in fusion of signals of two different channels of airborne radiometer makes it possible to compute such components of temperature field within one pixel as temperatures of the object and background. In the paper, the generalization of Dozier method is suggested. The suggested generalization of Dozier’s bispectral method named as biparametric method is applicable for static remote objects. In the suggested biparametric method, the measurements are carried out at the moments t<sub>1</sub> and t<sub>2</sub>. It is assumed that the object temperature reaches quantity T(t<sub>1</sub>) and T(t<sub>2</sub>) at these moments. On the bases of operational data of scanning infrared radiometer, the square area of one pixel can be calculated in dependence of distance between object and radiometer. This makes it possible to carry out location of static objects from two basis points using serial single wavelengths measurements of radiation emitted by the sub pixel object.
