Developing wireless nanodevices and nanosystems is of critical importance for sensing, medical science, environmental/infrastructure monitoring, defense technology and even personal electronics. It is highly desirable...Developing wireless nanodevices and nanosystems is of critical importance for sensing, medical science, environmental/infrastructure monitoring, defense technology and even personal electronics. It is highly desirable for wireless devices to be self-powered without using battery, without which most of the sensor network may be impossible. The pie- zoelectric nanogenerators have the potential to serve as self-sufficient power sources for micro/nano systems. For wurtzite structures that have non-central symmetry, such as ZnO, GaN and InN, a piezoelectric potential （piezopotential） is created in the crystal by applying a strain. The nanogenerator is invented by using the piezopotential as the driving force for electrons to flow in respond to a dynamic straining of piezoelectric nanowires. A gentle straining can produce an output voltage of up to 20 - 50 V from an integrated nanogenerator. Furthermore, piezopotential in the wurtzite structure can serve as gate voltage that can effectively tune/control the charge transport across an interface/junction; electronics fabricated based on such a mechanism is coined as piezotronics, with applications in force/pressure triggercd/controlled electronic devices, sensors, logic units and memory. By using the piezotronic effect, it is showed that the optoelectronic devices fabricated using wurtzite materials can have superior performance as solar cell, photon detector and light emitting diode. Piezotronie is likely to serve as ＂mechanosensation＂ for directly interfacing biomechanieal action with silicon based technology and active flexible electronics. The paper gives a brief review about the basis of nanogenertors and piezotronics and their potential applications in smart MEMS （micro-electro-mechanical systems）.展开更多
High-performance electronics and optoelectronics play vital roles in modern society,as they are the fundamental building blocks of functional devices and systems.Two-dimensional semiconductor materials(2D-SCMs)are pot...High-performance electronics and optoelectronics play vital roles in modern society,as they are the fundamental building blocks of functional devices and systems.Two-dimensional semiconductor materials(2D-SCMs)are potential candidates for highperformance electronics and optoelectronics due to their excellent physical,chemical,electrical,and photonic properties.Owing to their special crystalline structure,they also present unique piezoelectricity,which opens a new door to the innovative fields of piezotronics and piezo-phototronics.Piezotronics and piezophototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics.In this review,firstly,the growth methods and piezoelectric properties of 2D-SCMs are stated,and the mechanisms of piezotronics and piezo-phototronics are also introduced.Afterwards,the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed.In addition,the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized.Finally,the research progresses are summarized,and future perspectives are proposed.展开更多
The fascinating two-dimensional(2D)materials are being potentially applied in various fields from science to engineering benefitting from the charming physical and chemical properties on optics,electronics,and magneti...The fascinating two-dimensional(2D)materials are being potentially applied in various fields from science to engineering benefitting from the charming physical and chemical properties on optics,electronics,and magnetism,compared with the bulk crystal,while piezotronics is a universal and pervasive phenomenon in the materials with broking center symmetry,promoting the new field and notable achievements of piezotronics in 2D materials with higher accuracy and sensitivity.For example,20 parts per billion of the detecting limitations in NO_(2)sensor,500μm of spatial strain resolution in flexible devices,and 0.363 eV output voltage in nanogenerators.In this review,three categories of 2D piezotronics materials are first introduced ranging from organic to inorganic data,among which six types of 2D inorganic materials are emphasized based on the geometrical arrangement of different atoms.Then,the microscopic mechanism of carrier transport and separation in 2D piezotronic materials is highlighted,accompanied with the presentation of four measured methods.Subsequently,the developed applications of 2D piezotronics are discussed comprehensively including different kinds of sensors,piezo-catalysis,nanogenerators and information storage.Ultimately,we suggest the challenges and provide the ideas for qualitative-quantitative research of microscopic mechanism and large-scale integrated applications of 2D piezotronics.展开更多
Driven by the urgent demands for information technology,energy,and intelligent industry,third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices.Fundamentally,piez...Driven by the urgent demands for information technology,energy,and intelligent industry,third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices.Fundamentally,piezoelectric polarization is the most essential feature of GaN materials.Incorporating piezotronics and piezo-phototronics,GaN materials synergize mechanical signals with electrical and optical signals,thereby achieving multi-field coupling that enhances device performance.Piezotronics regulates the carrier transport process in micro-nano devices,which has been proven to significantly improve the performance of devices(such as high electron mobility transistors and microLEDs)and brings many novel applications.This review examines GaN material properties and the theoretical foundations of piezotronics and phototronics.Furthermore,it delves into the fabrication and integration processes of GaN devices to achieve state-of-the-art performance.Additionally,this review analyzes the impact of introducing three-dimensional stress and regulatory forces on the electrical and optical output performance of devices.Moreover,it discusses the burgeoning applications of GaN devices in neural sensing,optoelectronic output,and energy harvesting.The potential of piezotroniccontrolled GaN devices provides valuable insights for future research and the development of multi-functional,diversified electronic devices.展开更多
Bimodal pressure sensors capable of simultaneously detecting static and dynamic forces are essential to medical detection and bio-robotics.However,conventional pressure sensors typically integrate multiple operating m...Bimodal pressure sensors capable of simultaneously detecting static and dynamic forces are essential to medical detection and bio-robotics.However,conventional pressure sensors typically integrate multiple operating mechanisms to achieve bimodal detection,leading to complex device architectures and challenges in signal decoupling.In this work,we address these limitations by leveraging the unique piezotronic effect of Y-ion-doped ZnO to develop a bimodal piezotronic sensor(BPS)with a simplified structure and enhanced sensitivity.Through a combination of finite element simulations and experimental validation,we demonstrate that the BPS can effectively monitor both dynamic and static forces,achieving an on/off ratio of 1029,a gauge factor of 23,439 and a static force response duration of up to 600 s,significantly outperforming the performance of conventional piezoelectric sensors.As a proof-of-concept,the BPS demonstrates the continuous monitoring of Achilles tendon behavior under mixed dynamic and static loading conditions.Aided by deep learning algorithms,the system achieves 96%accuracy in identifying Achilles tendon movement patterns,thus enabling warnings for dangerous movements.This work provides a viable strategy for bimodal force monitoring,highlighting its potential in wearable electronics.展开更多
We study electric currents in a piezoelectric semiconductor fiber under a constant voltage and time-dependent axial stresses applied locally.From a nonlinear numerical analysis based on a one-dimensional phenomenologi...We study electric currents in a piezoelectric semiconductor fiber under a constant voltage and time-dependent axial stresses applied locally.From a nonlinear numerical analysis based on a one-dimensional phenomenological model using the commercial software COMSOL,it is found that pulse electric currents can be produced by periodic or time-harmonic stresses.The pulse currents can be tuned by the amplitude and frequency of the applied stress.The result obtained provides a new approach for the mechanical control of electric currents in piezoelectric semiconductor fibers and has potential applications in piezotronics.展开更多
With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous sys...With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc.展开更多
We study the electrical response of a multiferroic composite semiconductor fiber consisting of a piezoelectric semiconductor layer and two piezomagnetic layers under a transverse magnetic field applied locally to a fi...We study the electrical response of a multiferroic composite semiconductor fiber consisting of a piezoelectric semiconductor layer and two piezomagnetic layers under a transverse magnetic field applied locally to a finite part of the fiber.The phenomenological theory of piezomagnetic-piezoelectric semiconductors is employed.A one-dimensional model is derived for magnetically induced extension of the fiber.For open-circuit boundary conditions at the two ends of the fiber,an analytical solution is obtained from the model linearized for small carrier perturbations.The solution shows a local electric polarization and a pair of local electric potential barrier-well.When the two ends of the fiber are under a voltage,a nonlinear numerical solution shows that the potential barrier and well forbid the passage of currents when the voltage is low.The results have potential applications in piezotronic devices when magnetic fields are involved for manipulating the devices or sensing and transduction.展开更多
We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dime...We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dimensional equations.The plate equations exhibit direct couplings among bending,electric polarization along the plate thickness,and mobile charges.In the case of pure bending,a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges.In the bending of a rectangular plate under a distributed transverse mechanical load,it is shown that mobile charge distributions and potential barriers/wells develop in the plate.When the mechanical load is local and self-balanced,the induced carrier distributions and potential barriers/wells are also localized near the loading area.The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.展开更多
High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is ...High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties.展开更多
Piezoelectric semiconductors(PSs)possess both semiconducting properties and piezoelectric coupling effects,making them optimal building blocks for semiconductor devices.PS fiber-like structures have wide applications ...Piezoelectric semiconductors(PSs)possess both semiconducting properties and piezoelectric coupling effects,making them optimal building blocks for semiconductor devices.PS fiber-like structures have wide applications in multi-functional semiconductor devices.In this paper,a one-dimensional(1D)theoretical model is established to describe the piezotronic responses of a PS fiber under gradient temperature changes.The theoretical model aims to explain the mechanism behind the resistance change caused by such gradient temperature changes.Numerical results demonstrate that a gradient temperature change significantly affects the physical fields within the PS fiber,and can induce changes in its surface resistance.It provides important theoretical guidance on the development of piezotronic devices that are sensitive to temperature effects.展开更多
It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron curren...It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron current),which was previously misinterpreted as solely a Joule heating effect.We clarify that it is exactly the work done by the electric field force on the moving charges to stimulate the emergence of non-equilibrium carriers,which triggers the novel physical phenomena.As regards to Joule heat,we point out that it should be calculated from Ohm’s law,rather than simply from the product of the current and the electric field.Based on this understanding,we conduct thorough discussion on the role of the electric field force in the process of carrier recombination and carrier generation.The thermal effects of carrier recombination and carrier generation followed are incorporated into the thermal equation of energy.The present study shows that the exothermic effect of carrier recombination leads to a temperature rise at the PN interface,while the endothermic effect of carrier generation causes a temperature reduction at the interface.These two opposite effects cause opposite heat flow directions in the PN junction under forward and backward bias voltages,highlighting the significance of managing device heating phenomena in design considerations.Therefore,this study possesses referential significance for the design and tuning on the performance of piezotronic devices.展开更多
The propagation of an elastic wave(EW)in a piezoelectric semiconductor(PSC)subjected to static biasing fields is investigated.It is found that there exist two coupling waves between electric field and charge carriers....The propagation of an elastic wave(EW)in a piezoelectric semiconductor(PSC)subjected to static biasing fields is investigated.It is found that there exist two coupling waves between electric field and charge carriers.One is stimulated by the action of the polarized electric field in the EW-front on charge carriers(EFC),and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers(IEC).Obviously,the latter is a man-made and tunable wave-carrier interaction.A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to EW-fronts.Hence,a method is proposed to reform the EW performance by biasing-fields:reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to EWfronts.The corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a lowfrequency and larger than the pure piezoelectric wave velocity at a high-frequency.As for regulating the amplitude-frequency characteristics of the EW by the IEC,analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies(small wave lengths).The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.展开更多
Introducing polarization field of piezoelectric materials is an effective strategy to improve photocatalytic performance.In this study,a new type of BaTiO_(3)/CuO heterostructure catalyst was designed and synthesized ...Introducing polarization field of piezoelectric materials is an effective strategy to improve photocatalytic performance.In this study,a new type of BaTiO_(3)/CuO heterostructure catalyst was designed and synthesized to achieve high piezo-photocatalytic activity through the synergy of heterojunction and piezoelectric effect.The BaTiO_(3)/CuO heterostructure shows a significantly enhanced piezo-photocatalytic degradation efficiency of organic pollutants compared with the individual BaTiO_(3) nanowires(NWs)and CuO nanoparticles(NPs).Under the co-excitation of ultrasonic vibration and ultraviolet radiation,the optimal degradation reaction rate constant k of polarized BaTiO_(3)/CuO heterostructure on methyl orange(MO)dye can reach 0.05 min^(−1),which is 6.1 times of photocatalytic rate and 7 times of piezocatalytic rate.The BaTiO_(3)/CuO heterostructure with remarkable piezo-photocatalytic behavior provides a promising strategy for the development of high-efficiency catalysts for wastewater purification,and it also helps understand the coupling mechanism between piezoelectric effect and photocatalysis.展开更多
GaN ultraviolet （UV） photodetectors （PDs） have attracted tremendous attention due to their chemical stability in harsh environments. Although Schottky- contacted GaN-based UV PDs have been implemented with better ...GaN ultraviolet （UV） photodetectors （PDs） have attracted tremendous attention due to their chemical stability in harsh environments. Although Schottky- contacted GaN-based UV PDs have been implemented with better performance than that of ohmic contacts, it remains unknown how the barrier height at local Schottky contacts controls the sensors＇ performance. In this work, the piezotronic effect was employed to tune the Schottky barrier height （SBH） at local contacts and hence enhance the performances of Schottky-contacted metal-semiconductor- metal （MSM） structured GaN nanobelt （NB）-based PDs. In general, the response level of the PDs was obviously enhanced by the piezotronic effect when applying a strain on devices. The responsivity of the PD was increased by 18%, and the sensitivity was enhanced by from 22% to 31%, when illuminated by a 325 nm laser with light intensity ranging from 12 to 2 W/cm2. Carefully studying the mechanism using band structure diagrams reveals that the observed enhancement of the PD performance resulted from the change in SBH caused by external strain as well as light intensity. Using piezotronic effects thus provides a practical way to enhance the performance of PDs made not only of GaN, but also other wurtzite and zinc blende family materials.展开更多
Performance modulation of ZnO optoelectronic devices in the presence of proper piezoelectric polarization charges has been widely reported, whereas relatively less work has been performed about the influence of photoe...Performance modulation of ZnO optoelectronic devices in the presence of proper piezoelectric polarization charges has been widely reported, whereas relatively less work has been performed about the influence of photoexcitation on piezotronics. In this stud~ we experimentally investigated the performance evolution of ZnO piezotronic strain sensor under various 365 nm UV irradiation densities. The device demonstrated a response ratio of -200 under no illumination and under -0.53% compressive strain, and the response time is approximately 0.3 s. However, tremendous performance degradation was observed with the increase in the illumination densi~, which is attributed to the W-modulated change in the free electron concentration and Schottky barrier height. It was observed that increased carrier density intensifies the screening effect and thus, the modulation ability of piezo-polarization charges weakens. Meanwhile, the deterioration of rectifying behavior at the interface under UV illumination also jeopardizes the device performance.展开更多
Due to the coupling of piezoelectric and semiconducting dual properties,much attention has been focused on the piezoelectric semiconductor materials,such as ZnO,ZnS,CdS and GaN.With the usage of these piezoelectric se...Due to the coupling of piezoelectric and semiconducting dual properties,much attention has been focused on the piezoelectric semiconductor materials,such as ZnO,ZnS,CdS and GaN.With the usage of these piezoelectric semiconductor materials,novel nanodevices have been demonstrated,from which a new field called piezotronics was formulated.The core of piezotronics is to study the mechanism of the piezoelectric effect on tuning the charge transport behavior across various junctions or interfaces,with potential applications in sensors,microelectromechanical systems,and force/pressure triggered electric devices.Here following the theoretical frame work of piezotronic effect,analytical solutions of piezoelectric heterojunction are presented to investigate the electrical transport behavior at a p-n junction.Numerical simulation is given for guiding future experimental measurements.展开更多
Piezoelectricity is the electric charge which accumulates in certain materials in response to mechanical stimuli,while piezoelectric nanogenerators(PENGs)converting mechanical energy into electricity can be widely use...Piezoelectricity is the electric charge which accumulates in certain materials in response to mechanical stimuli,while piezoelectric nanogenerators(PENGs)converting mechanical energy into electricity can be widely used for energy harvesting and self-powered systems.The group IV-VI monochalcogenides may exhibit strong piezoelectricity because of their puckered C_(2v)symmetry and electronic structure,making them promising for flexible PENG.Herein,we investigated the synthesis and piezoelectric properties of multilayer SnSe nanosheets grown by chemical vapor deposition(CVD).The SnSe nanosheets exhibited high single-crystallinity,large area,and good stability.The strong layer-dependent in-plane piezoelectric coefficient of SnSe nanosheets showed a saturated trend to be~110 pm/V,which overcomes the weak piezoelectric response or odd-even effects in other layered nanosheets.A high energy conversion efficiency of 9.3%and a maximum power density of 538 mW/cm^(2)at 1.03%strain have been demonstrated in a SnSe-based PENG.Based on the enhanced piezoelectricity of SnSe and attractive output performance of the nanogenerator,a self-powered sensor for human motion monitoring is further developed.These results demonstrate the strong piezoelectricity in high quality CVD-grown SnSe nanosheets,allowing for application in flexible smart piezoelectric sensors and advanced microelectromechanical devices.展开更多
文摘Developing wireless nanodevices and nanosystems is of critical importance for sensing, medical science, environmental/infrastructure monitoring, defense technology and even personal electronics. It is highly desirable for wireless devices to be self-powered without using battery, without which most of the sensor network may be impossible. The pie- zoelectric nanogenerators have the potential to serve as self-sufficient power sources for micro/nano systems. For wurtzite structures that have non-central symmetry, such as ZnO, GaN and InN, a piezoelectric potential （piezopotential） is created in the crystal by applying a strain. The nanogenerator is invented by using the piezopotential as the driving force for electrons to flow in respond to a dynamic straining of piezoelectric nanowires. A gentle straining can produce an output voltage of up to 20 - 50 V from an integrated nanogenerator. Furthermore, piezopotential in the wurtzite structure can serve as gate voltage that can effectively tune/control the charge transport across an interface/junction; electronics fabricated based on such a mechanism is coined as piezotronics, with applications in force/pressure triggercd/controlled electronic devices, sensors, logic units and memory. By using the piezotronic effect, it is showed that the optoelectronic devices fabricated using wurtzite materials can have superior performance as solar cell, photon detector and light emitting diode. Piezotronie is likely to serve as ＂mechanosensation＂ for directly interfacing biomechanieal action with silicon based technology and active flexible electronics. The paper gives a brief review about the basis of nanogenertors and piezotronics and their potential applications in smart MEMS （micro-electro-mechanical systems）.
基金supported by the National Natural Science Foundation of China(Grant No.62174131 and 61704135)the China Postdoctoral Science Foundation(Grant No.2018T111055 and 2017M613138)the Postdoctoral Research Project of Shaanxi Province(Grant No.2017BSHEDZZ30).
文摘High-performance electronics and optoelectronics play vital roles in modern society,as they are the fundamental building blocks of functional devices and systems.Two-dimensional semiconductor materials(2D-SCMs)are potential candidates for highperformance electronics and optoelectronics due to their excellent physical,chemical,electrical,and photonic properties.Owing to their special crystalline structure,they also present unique piezoelectricity,which opens a new door to the innovative fields of piezotronics and piezo-phototronics.Piezotronics and piezophototronics utilize the piezoelectric polarization charges produced when the 2D-SCMs undergo externally applied strains/stresses to modulate the performance of 2D-SCMs-based electronics and optoelectronics.In this review,firstly,the growth methods and piezoelectric properties of 2D-SCMs are stated,and the mechanisms of piezotronics and piezo-phototronics are also introduced.Afterwards,the recent progress of piezotronics and piezo-phototronics in high-performance 2D-SMCs-based electronics and optoelectronics are systematically reviewed.In addition,the functional devices and systems based on the piezotronics and piezo-phototronics in 2D-SMCs have been summarized.Finally,the research progresses are summarized,and future perspectives are proposed.
基金Fundamental Research Funds for the Central UniversitiesNational Key R&D Project from Minister of Science and Technology,China,Grant/Award Number:2016YFA0202703+3 种基金National Natural Science Foundation of China,Grant/Award Numbers:11704081,U20A20166,61675027,61805015,618040Natural Science Foundation of Beijing Municipality,Grant/Award Number:Z180011Natural Science Foundation of Guangxi Province,Grant/Award Numbers:2020GXNSFAA297182,2017GXNSFBA198229Shenzhen Science and Technology Program,Grant/Award Number:KQTD20170810105439418。
文摘The fascinating two-dimensional(2D)materials are being potentially applied in various fields from science to engineering benefitting from the charming physical and chemical properties on optics,electronics,and magnetism,compared with the bulk crystal,while piezotronics is a universal and pervasive phenomenon in the materials with broking center symmetry,promoting the new field and notable achievements of piezotronics in 2D materials with higher accuracy and sensitivity.For example,20 parts per billion of the detecting limitations in NO_(2)sensor,500μm of spatial strain resolution in flexible devices,and 0.363 eV output voltage in nanogenerators.In this review,three categories of 2D piezotronics materials are first introduced ranging from organic to inorganic data,among which six types of 2D inorganic materials are emphasized based on the geometrical arrangement of different atoms.Then,the microscopic mechanism of carrier transport and separation in 2D piezotronic materials is highlighted,accompanied with the presentation of four measured methods.Subsequently,the developed applications of 2D piezotronics are discussed comprehensively including different kinds of sensors,piezo-catalysis,nanogenerators and information storage.Ultimately,we suggest the challenges and provide the ideas for qualitative-quantitative research of microscopic mechanism and large-scale integrated applications of 2D piezotronics.
基金the support from the National Natural Science Foundation of China(Grant Nos.52173298,52192611 and 61904012)the National Key R&D Project from Minister of Science and Technology(2021YFA1201603)+1 种基金Beijing Natural Science Foundation(Z230024)the Fundamental Research Funds for the Central Universities。
文摘Driven by the urgent demands for information technology,energy,and intelligent industry,third-generation semiconductor GaN has emerged as a pivotal component in electronic and optoelectronic devices.Fundamentally,piezoelectric polarization is the most essential feature of GaN materials.Incorporating piezotronics and piezo-phototronics,GaN materials synergize mechanical signals with electrical and optical signals,thereby achieving multi-field coupling that enhances device performance.Piezotronics regulates the carrier transport process in micro-nano devices,which has been proven to significantly improve the performance of devices(such as high electron mobility transistors and microLEDs)and brings many novel applications.This review examines GaN material properties and the theoretical foundations of piezotronics and phototronics.Furthermore,it delves into the fabrication and integration processes of GaN devices to achieve state-of-the-art performance.Additionally,this review analyzes the impact of introducing three-dimensional stress and regulatory forces on the electrical and optical output performance of devices.Moreover,it discusses the burgeoning applications of GaN devices in neural sensing,optoelectronic output,and energy harvesting.The potential of piezotroniccontrolled GaN devices provides valuable insights for future research and the development of multi-functional,diversified electronic devices.
基金financially supported by the National Natural Science Foundation of China(No.U2330120)the Natural Science Foundation of Sichuan Province of China(No.2023NSFSC0313)the Basic Research Cultivation Project of Southwest Jiaotong University(No.2682023KJ024)。
文摘Bimodal pressure sensors capable of simultaneously detecting static and dynamic forces are essential to medical detection and bio-robotics.However,conventional pressure sensors typically integrate multiple operating mechanisms to achieve bimodal detection,leading to complex device architectures and challenges in signal decoupling.In this work,we address these limitations by leveraging the unique piezotronic effect of Y-ion-doped ZnO to develop a bimodal piezotronic sensor(BPS)with a simplified structure and enhanced sensitivity.Through a combination of finite element simulations and experimental validation,we demonstrate that the BPS can effectively monitor both dynamic and static forces,achieving an on/off ratio of 1029,a gauge factor of 23,439 and a static force response duration of up to 600 s,significantly outperforming the performance of conventional piezoelectric sensors.As a proof-of-concept,the BPS demonstrates the continuous monitoring of Achilles tendon behavior under mixed dynamic and static loading conditions.Aided by deep learning algorithms,the system achieves 96%accuracy in identifying Achilles tendon movement patterns,thus enabling warnings for dangerous movements.This work provides a viable strategy for bimodal force monitoring,highlighting its potential in wearable electronics.
基金This work was supported by the State Key Laboratory of Mechanics and Control of Mechanical Structures at NUAA[Grant number MCMS-E-0520K02]the Key Laboratory of Impact and Safety Engineering,Ministry of Education at Ningbo University[Grant number CJ201904]+1 种基金the Fundamental Research Funds for the Central Universities[Grant numbers NE2020002,NS2019007]a project funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD).
文摘We study electric currents in a piezoelectric semiconductor fiber under a constant voltage and time-dependent axial stresses applied locally.From a nonlinear numerical analysis based on a one-dimensional phenomenological model using the commercial software COMSOL,it is found that pulse electric currents can be produced by periodic or time-harmonic stresses.The pulse currents can be tuned by the amplitude and frequency of the applied stress.The result obtained provides a new approach for the mechanical control of electric currents in piezoelectric semiconductor fibers and has potential applications in piezotronics.
基金financially supported by the National Natural Science Foundation of China(52073031,22008151)the National Key Research and Development Program of China(2021YFB3200304)+2 种基金Beijing Nova Program(Z211100002121148)Fundamental Research Funds for the Central Universities(E0EG6801X2)the‘Hundred Talents Program’of the Chinese Academy of Sciences。
文摘With the arrival of the era of artificial intelligence(AI)and big data,the explosive growth of data has raised higher demands on computer hardware and systems.Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck.Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner,with the capability to sense/store/process information of external stimuli.In this review,we have presented the piezotronic neuromorphic devices(which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure)and discussed their operating mechanisms and related manufacture techniques.Secondly,we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications,including bionic sensing,information storage,logic computing,and electrical/optical artificial synapses.Finally,in the context of future development,challenges,and perspectives,we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively.It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things,AI,biomedical engineering,etc.
基金This work was supported by the National Natural Science Foundation of China(Nos.11672265,11972139,and 11621062)the Science and Technology Innovation Committee of Shenzhen(No.JCYJ20180227175523802)+1 种基金the State Key Laboratory of Mechanics and Control of Mechanical Structures(Nanjing University of Aeronautics and astronautics,No.MCMS-E-0220K01)Department of Water Resources of Zhejiang Province(No.RC1719).
文摘We study the electrical response of a multiferroic composite semiconductor fiber consisting of a piezoelectric semiconductor layer and two piezomagnetic layers under a transverse magnetic field applied locally to a finite part of the fiber.The phenomenological theory of piezomagnetic-piezoelectric semiconductors is employed.A one-dimensional model is derived for magnetically induced extension of the fiber.For open-circuit boundary conditions at the two ends of the fiber,an analytical solution is obtained from the model linearized for small carrier perturbations.The solution shows a local electric polarization and a pair of local electric potential barrier-well.When the two ends of the fiber are under a voltage,a nonlinear numerical solution shows that the potential barrier and well forbid the passage of currents when the voltage is low.The results have potential applications in piezotronic devices when magnetic fields are involved for manipulating the devices or sensing and transduction.
基金Project supported by the National Natural Science Foundation of China(Nos.12072167 and 11972199)the Natural Science Foundation of Zhejiang Province of China(Nos.LZ22A020001 and LGG19A020001)。
文摘We study the bending of a two-layer piezoelectric semiconductor plate(bimorph).The macroscopic theory of piezoelectric semiconductors is employed.A set of two-dimensional plate equations is derived from the three-dimensional equations.The plate equations exhibit direct couplings among bending,electric polarization along the plate thickness,and mobile charges.In the case of pure bending,a combination of physical and geometric parameters is identified which characterizes the strength of the interaction between the mechanical load and the distribution of mobile charges.In the bending of a rectangular plate under a distributed transverse mechanical load,it is shown that mobile charge distributions and potential barriers/wells develop in the plate.When the mechanical load is local and self-balanced,the induced carrier distributions and potential barriers/wells are also localized near the loading area.The results are fundamentally useful for mechanically manipulating mobile charges in piezoelectric semiconductor devices.
基金Key-Area Research and Development Program of Guangdong Province(Nos.2020B010172001,2020B010174004)GDAS’Project of Science and Technology Development(No.2018GDASCX-0112)+3 种基金Science and Technology Program of Guangzhou(No.2019050001)National Key Research and Development Program of China(No.2017YFB0404100)National Natural Science Foundation of China(Grant No.11804103)Guangdong Natural Science Foundation for Distinguished Young Scholars(Grant No.2018B030306048).
文摘High-electron-mobility transistors(HEMTs)are a promising device in the field of radio frequency and wireless communication.However,to unlock the full potential of HEMTs,the fabrication of large-size flexible HEMTs is required.Herein,a large-sized(>2 cm^(2))of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique.The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas(2DEG)and phonons.The saturation current of the flexible HEMT is enhanced by 3.15%under the 0.547%tensile condition,and the thermal degradation of the HEMT was also obviously suppressed under compressive straining.The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism.This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs,but also demonstrates a low-cost method to optimize its electronic and thermal properties.
基金Project supported by the National Natural Science Foundation of China (Nos.12172326 and 11972319)the National Key Research and Development Program of China (No.2020YFA0711700)the Natural Science Foundation of Zhejiang Province of China (No.LR21A020002)。
文摘Piezoelectric semiconductors(PSs)possess both semiconducting properties and piezoelectric coupling effects,making them optimal building blocks for semiconductor devices.PS fiber-like structures have wide applications in multi-functional semiconductor devices.In this paper,a one-dimensional(1D)theoretical model is established to describe the piezotronic responses of a PS fiber under gradient temperature changes.The theoretical model aims to explain the mechanism behind the resistance change caused by such gradient temperature changes.Numerical results demonstrate that a gradient temperature change significantly affects the physical fields within the PS fiber,and can induce changes in its surface resistance.It provides important theoretical guidance on the development of piezotronic devices that are sensitive to temperature effects.
基金the National Natural Science Foundation of China(Nos.12232007,11972164,and 12102141)。
文摘It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron current),which was previously misinterpreted as solely a Joule heating effect.We clarify that it is exactly the work done by the electric field force on the moving charges to stimulate the emergence of non-equilibrium carriers,which triggers the novel physical phenomena.As regards to Joule heat,we point out that it should be calculated from Ohm’s law,rather than simply from the product of the current and the electric field.Based on this understanding,we conduct thorough discussion on the role of the electric field force in the process of carrier recombination and carrier generation.The thermal effects of carrier recombination and carrier generation followed are incorporated into the thermal equation of energy.The present study shows that the exothermic effect of carrier recombination leads to a temperature rise at the PN interface,while the endothermic effect of carrier generation causes a temperature reduction at the interface.These two opposite effects cause opposite heat flow directions in the PN junction under forward and backward bias voltages,highlighting the significance of managing device heating phenomena in design considerations.Therefore,this study possesses referential significance for the design and tuning on the performance of piezotronic devices.
基金Project supported by the National Natural Science Foundation of China(Nos.12232007,12102141,U21A20430,and 11972164)the Chinese Postdoctoral Science Foundation(No.2022M711252)。
文摘The propagation of an elastic wave(EW)in a piezoelectric semiconductor(PSC)subjected to static biasing fields is investigated.It is found that there exist two coupling waves between electric field and charge carriers.One is stimulated by the action of the polarized electric field in the EW-front on charge carriers(EFC),and the other is stimulated by the action of initial electric field in biasing fields on dynamic carriers(IEC).Obviously,the latter is a man-made and tunable wave-carrier interaction.A careful study shows that IEC can play a leading role in remaking dynamic performance of the wave-front and an inter-medium role in transferring energy from biasing fields to EW-fronts.Hence,a method is proposed to reform the EW performance by biasing-fields:reforming the dispersivity of EW-fronts by promoting competition between IEC and EFC and inverting the dissipation by the IEC to transfer energy from biasing fields to EWfronts.The corresponding tuning laws on the phase-frequency characteristics of an EW show that the wave velocity can be regulated smaller than the pure EW velocity at a lowfrequency and larger than the pure piezoelectric wave velocity at a high-frequency.As for regulating the amplitude-frequency characteristics of the EW by the IEC,analyses show that EWs can obtain amplification only for those with relatively high vibration frequencies(small wave lengths).The studies will provide guidance for theoretical analysis of waves propagating in PSCs and practical application and design of piezotronic devices.
基金This work was supported by the Major Science and Technology Programs of Yunnan(No.202002AB080001-1)National Natural Science Foundation of China(No.91963114)+1 种基金Fundamental Research Funds for the Central Universities(No.FRF-TP-20-12B)National Key R&D Program of China(No.2018YFB0704301).
文摘Introducing polarization field of piezoelectric materials is an effective strategy to improve photocatalytic performance.In this study,a new type of BaTiO_(3)/CuO heterostructure catalyst was designed and synthesized to achieve high piezo-photocatalytic activity through the synergy of heterojunction and piezoelectric effect.The BaTiO_(3)/CuO heterostructure shows a significantly enhanced piezo-photocatalytic degradation efficiency of organic pollutants compared with the individual BaTiO_(3) nanowires(NWs)and CuO nanoparticles(NPs).Under the co-excitation of ultrasonic vibration and ultraviolet radiation,the optimal degradation reaction rate constant k of polarized BaTiO_(3)/CuO heterostructure on methyl orange(MO)dye can reach 0.05 min^(−1),which is 6.1 times of photocatalytic rate and 7 times of piezocatalytic rate.The BaTiO_(3)/CuO heterostructure with remarkable piezo-photocatalytic behavior provides a promising strategy for the development of high-efficiency catalysts for wastewater purification,and it also helps understand the coupling mechanism between piezoelectric effect and photocatalysis.
基金Acknowledgements This research was supported by National Science Foundation （NSF）, Multidisciplinary University Research Initiative （MURI） Airforce, Basic Energy Sciences （BES） Department of Energy （DOE） （No. DE- FG02-07ER46394） and the Knowledge Innovation Program of the Chinese Academy of Sciences （Grant No. KJCX2-YW-M13）.
文摘GaN ultraviolet （UV） photodetectors （PDs） have attracted tremendous attention due to their chemical stability in harsh environments. Although Schottky- contacted GaN-based UV PDs have been implemented with better performance than that of ohmic contacts, it remains unknown how the barrier height at local Schottky contacts controls the sensors＇ performance. In this work, the piezotronic effect was employed to tune the Schottky barrier height （SBH） at local contacts and hence enhance the performances of Schottky-contacted metal-semiconductor- metal （MSM） structured GaN nanobelt （NB）-based PDs. In general, the response level of the PDs was obviously enhanced by the piezotronic effect when applying a strain on devices. The responsivity of the PD was increased by 18%, and the sensitivity was enhanced by from 22% to 31%, when illuminated by a 325 nm laser with light intensity ranging from 12 to 2 W/cm2. Carefully studying the mechanism using band structure diagrams reveals that the observed enhancement of the PD performance resulted from the change in SBH caused by external strain as well as light intensity. Using piezotronic effects thus provides a practical way to enhance the performance of PDs made not only of GaN, but also other wurtzite and zinc blende family materials.
基金This work was supported by the National Basic Research Program of China （No. 2013CB932602）, the Program of Introducing Talents of Discipline to Universities （No. B14003）, National Natural Science Foundation of China （Nos. 51527802 and 51232001）, Beijing Municipal Science ＆ Technology Commission, and the Fundamental Research Funds for Central Universities.
文摘Performance modulation of ZnO optoelectronic devices in the presence of proper piezoelectric polarization charges has been widely reported, whereas relatively less work has been performed about the influence of photoexcitation on piezotronics. In this stud~ we experimentally investigated the performance evolution of ZnO piezotronic strain sensor under various 365 nm UV irradiation densities. The device demonstrated a response ratio of -200 under no illumination and under -0.53% compressive strain, and the response time is approximately 0.3 s. However, tremendous performance degradation was observed with the increase in the illumination densi~, which is attributed to the W-modulated change in the free electron concentration and Schottky barrier height. It was observed that increased carrier density intensifies the screening effect and thus, the modulation ability of piezo-polarization charges weakens. Meanwhile, the deterioration of rectifying behavior at the interface under UV illumination also jeopardizes the device performance.
基金partly supported by the Beijing Institute of Nanoenergy and NanosystemsChinese Academy of Sciencesthe Fundamental Research Funds for the Central Universities(Grant No.Lzujbky-2013-35)
文摘Due to the coupling of piezoelectric and semiconducting dual properties,much attention has been focused on the piezoelectric semiconductor materials,such as ZnO,ZnS,CdS and GaN.With the usage of these piezoelectric semiconductor materials,novel nanodevices have been demonstrated,from which a new field called piezotronics was formulated.The core of piezotronics is to study the mechanism of the piezoelectric effect on tuning the charge transport behavior across various junctions or interfaces,with potential applications in sensors,microelectromechanical systems,and force/pressure triggered electric devices.Here following the theoretical frame work of piezotronic effect,analytical solutions of piezoelectric heterojunction are presented to investigate the electrical transport behavior at a p-n junction.Numerical simulation is given for guiding future experimental measurements.
基金supported by the grants from Research Grants Council of Hong Kong(Nos.GRF PolyU 153025/19P,SRFS2122-5S02,and AoE/P-701/20)PolyU Otto Poon Charitable Foundation Research Institute for Smart Energy(No.Q-CDBD).
文摘Piezoelectricity is the electric charge which accumulates in certain materials in response to mechanical stimuli,while piezoelectric nanogenerators(PENGs)converting mechanical energy into electricity can be widely used for energy harvesting and self-powered systems.The group IV-VI monochalcogenides may exhibit strong piezoelectricity because of their puckered C_(2v)symmetry and electronic structure,making them promising for flexible PENG.Herein,we investigated the synthesis and piezoelectric properties of multilayer SnSe nanosheets grown by chemical vapor deposition(CVD).The SnSe nanosheets exhibited high single-crystallinity,large area,and good stability.The strong layer-dependent in-plane piezoelectric coefficient of SnSe nanosheets showed a saturated trend to be~110 pm/V,which overcomes the weak piezoelectric response or odd-even effects in other layered nanosheets.A high energy conversion efficiency of 9.3%and a maximum power density of 538 mW/cm^(2)at 1.03%strain have been demonstrated in a SnSe-based PENG.Based on the enhanced piezoelectricity of SnSe and attractive output performance of the nanogenerator,a self-powered sensor for human motion monitoring is further developed.These results demonstrate the strong piezoelectricity in high quality CVD-grown SnSe nanosheets,allowing for application in flexible smart piezoelectric sensors and advanced microelectromechanical devices.
