A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep aval...A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.展开更多
We developed a miniaturized high-sensitivity single-photon avalanche diode(SPAD)device based on 180 nm bipolar complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor technology and investiga...We developed a miniaturized high-sensitivity single-photon avalanche diode(SPAD)device based on 180 nm bipolar complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor technology and investigated the effect of a deep virtual guard ring(VGR)on device performance.To mitigate the degradation in photon detection efficiency(PDE)and dark count rate(DCR)induced by device scaling,we innovatively implemented a P-type implant/high-voltage n-well SPAD structure.This configuration deepens and widens the multiplication region to broaden the spectral response,while the specialized adoption of the P-type epitaxial VGR technology suppresses premature edge breakdown and reduces dark noise.Furthermore,a unique layout was devised to maximize the photosensitive area and increase the fill factor of the device.Through technology computer-aided design simulations,the effect of the guard ring width on the electric field distribution inside the device was systematically studied.Experimental results demonstrate that the fill factor of the device reaches 31.5% when the pitch is scaled down to 8.5μm.The novel device achieves a high peak PDE of 24% at 555 nm and an ultralow DCR of 0.41 cps·μm^(-2)at 5 V excess bias voltage.展开更多
The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tu...The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.展开更多
基金supported by the National Natural Science Foundation of China under Grant 62171233the Natural Science Foundation of China,Jiangsu Province under Grant BK20241891the Jiangsu Province Graduate Research and Practice Innovation Plan under Grants SJCX24_0313 and KYCX24_1169。
文摘A high-sensitivity,low-noise single photon avalanche diode(SPAD)detector was presented based on a 180 nm BCD process.The proposed device utilizes a p-implant layer/high-voltage n-well(HVNW)junction to form a deep avalanche multiplication region for near-infrared(NIR)sensitivity enhancement.By optimizing the device size and electric field of the guard ring,the fill factor(FF)is significantly improved,further increasing photon detection efficiency(PDE).To solve the dark noise caused by the increasing active diameter,a field polysilicon gate structure connected to the p+anode was investigated,effectively suppressing dark count noise by 76.6%.It is experimentally shown that when the active diameter increases from 5 to 10μm,the FF is significantly improved from 20.7%to 39.1%,and thus the peak PDE also rises from 13.3%to 25.8%.At an excess bias voltage of 5 V,a NIR photon detection probability(PDP)of 6.8%at 905 nm,a dark count rate(DCR)of 2.12 cps/μm^(2),an afterpulsing probability(AP)of 1.2%,and a timing jitter of 216 ps are achieved,demonstrating excellent single photon detection performance.
基金Project supported by the National Natural Science Foundation of China(Grant No.62171233)the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20241891)。
文摘We developed a miniaturized high-sensitivity single-photon avalanche diode(SPAD)device based on 180 nm bipolar complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor technology and investigated the effect of a deep virtual guard ring(VGR)on device performance.To mitigate the degradation in photon detection efficiency(PDE)and dark count rate(DCR)induced by device scaling,we innovatively implemented a P-type implant/high-voltage n-well SPAD structure.This configuration deepens and widens the multiplication region to broaden the spectral response,while the specialized adoption of the P-type epitaxial VGR technology suppresses premature edge breakdown and reduces dark noise.Furthermore,a unique layout was devised to maximize the photosensitive area and increase the fill factor of the device.Through technology computer-aided design simulations,the effect of the guard ring width on the electric field distribution inside the device was systematically studied.Experimental results demonstrate that the fill factor of the device reaches 31.5% when the pitch is scaled down to 8.5μm.The novel device achieves a high peak PDE of 24% at 555 nm and an ultralow DCR of 0.41 cps·μm^(-2)at 5 V excess bias voltage.
基金Project supported by the National Natural Science Foundation of China(Grant No.11005010)
文摘The detection of low-level light is a key technology in various experimental scientific studies. As a photon detector, the silicon photomultiplier （SiPM） has gradually become an alternative to the photomultiplier tube （PMT） in many applications in high-energy physics, astroparticle physics, and medical imaging because of its high photon detection efficiency （PDE）, good resolution for single-photon detection, insensitivity to magnetic field, low operating voltage, compactness, and low cost. However, primarily because of the geometric fill factor, the PDE of most SiPMs is not very high; in particular, for those SiPMs with a high density of micro cells, the effective area is small, and the bandwidth of the light response is narrow. As a building block of the SiPM, the concept of the backside-illuminated avalanche drift detector （ADD） was first proposed by the Max Planck Institute of Germany eight years ago; the ADD is promising to have high PDE over the full energy range of optical photons, even ultraviolet light and X-ray light, and because the avalanche multiplication region is very small, the ADD is beneficial for the fabrication of large-area SiPMs. However, because of difficulties in design and fabrication, no significant progress had been made, and the concept had not yet been verified. In this paper, preliminary results in the design, fabrication, and performance of a backside-illuminated ADD are reported; the difficulties in and limitations to the backside-illuminated ADD are analyzed.
