We report the development of the[Pt_(0.75)Ti_(0.25)/Co-Ni multilayer/Ta]_n superlattice with strong spin-orbit torque,large perpendicular magnetic anisotropy,and remarkably low switching current density.We demonstrate...We report the development of the[Pt_(0.75)Ti_(0.25)/Co-Ni multilayer/Ta]_n superlattice with strong spin-orbit torque,large perpendicular magnetic anisotropy,and remarkably low switching current density.We demonstrate that the efficiency of the spin-orbit torque increases nearly linearly with the repetition number n,which is in excellent agreement with the spin Hall effect of the Pt_(0.75)Ti_(0.25)being essentially the only source of the observed spin-orbit torque.The perpendicular magnetic anisotropy field is also substantially enhanced by more than a factor of 2 as n increases from 1 to6.The[Pt_(0.75)Ti_(0.25)/Co-Ni multilayers/Ta]_n superlattice additionally exhibits deterministic,low-current-density magnetization switching despite the very large total layer thicknesses.The unique combination of strong spin-orbit torque,robust perpendicular magnetic anisotropy,low-current-density switching,and excellent high thermal stability makes the[Pt_(0.75)Ti_(0.25)/Co-Ni multilayer/Ta]_n superlattice a highly compelling material candidate for ultrafast,energy-efficient,and long-data-retention spintronic technologies.展开更多
The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-per...The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies.展开更多
Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films w...Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer.The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm).Its abnormal Hall resistance(R_(Hall)),coercivity(H_(c))and effective magnetic anisotropy constant(Keff)are 0.08Ω,284 Oe and 1.36 Merg/cm^(3),respectively,which are 100%,492%,and 183%higher than the corresponding values(0.04Ω,48 Oe,and 0.48 Merg/cm^(3))of the Pd(6 nm)/Co(1 nm)/Pd(3 nm)trilayer films.The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic(FM)coupling,and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films.展开更多
BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thick...BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate,and then a c-axis perpendicularly oriented Ba M thin film grows on the buffer layer.Atomic force microscopy results indicate that the Ba M thin film exhibits a spiral island growth mode on the buffer layer.Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy,while the Ba M thin film exhibits perpendicular magnetic anisotropy.The out-of-plane coercivity decreases with increasing Ba M thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation.The 200 nm thick film exhibits optimum magnetic properties with M_(s)=319 emu/cm^(3) and H_(c)=1546 Oe.展开更多
Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers....Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt（5.0 nm）/[Co（0.4 nm）/Pt（0.6 nm）]3/Co（0.4 nm）/Cu（3.0 nm）and Cu（3.0 nm）/[Co（0.4 nm）/Pt（1.5 nm）]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity（HC） of both layers. The perpendicular giant magnetoresistance（GMR） of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.展开更多
[FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions （n） on ...[FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions （n） on the structure and magnetic properties of the multilayers were investigated. It was found that the difference between in-plane and out-of-plane coercivities varied with an increase of inserted Ag layer thickness in the [FePt 2 nm/Ag x nm]10 multilayers. The ratio of out-of-plane coercivity to in-plane coercivity reached the maximum value with the Ag layer thickness of 5 nm, indicating that the Ag layer thickness plays an important role in obtaining perpendicular orientation. For the [FePt 2 nm/Ag 5 um]n multilayers, perpendicular orientation is also influenced by n. The maximum value of the ratio of out-of-plane coercivity to in-plane coercivity appeared when n was given as 8. It was found that the [FePt 2 nm/Ag 5 nm]8 had a high perpendicular coercivity of 520 kA/m and a low in-plane one of 88 kA/m, which shows a strong perpendicular anisotropy.展开更多
Graphene-based materials on wearable electronics and bendable displays have received considerable attention for the mechanical flexibility,superior electrical conductivity,and high surface area,which are proved to be ...Graphene-based materials on wearable electronics and bendable displays have received considerable attention for the mechanical flexibility,superior electrical conductivity,and high surface area,which are proved to be one of the most promising candidates of stretching and wearable sensors.However,polarized electric charges need to overcome the barrier of graphene sheets to cross over flakes to penetrate into the electrode,as the graphene planes are usually parallel to the electrode surface.By introducing electron-induced perpendicular graphene(EIPG)electrodes incorporated with a stretchable dielectric layer,a flexible and stretchable touch sensor with"in-sheet-chargestransportation"is developed to lower the resistance of carrier movement.The electrode was fabricated with porous nanostructured architecture design to enable wider variety of dielectric constants of only 50-μm-thick Ecoflex layer,leading to fast response time of only 66 ms,as well as high sensitivities of 0.13 kPa-1 below 0.1 kPa and 4.41 MPa-1 above 10 kPa,respectively.Moreover,the capacitance-decrease phenomenon of capacitive sensor is explored to exhibit an object recognition function in one pixel without any other integrated sensor.This not only suggests promising applications of the EIPG electrode in flexible touch sensors but also provides a strategy for internet of things security functions.展开更多
ZSM-5 plates with a perpendicular intergrowth structure was synthesized by using a simple amine as the structure directing agent under hydrothermal conditions,in which the mother plate and the perpendicularly standing...ZSM-5 plates with a perpendicular intergrowth structure was synthesized by using a simple amine as the structure directing agent under hydrothermal conditions,in which the mother plate and the perpendicularly standing plates oriented along the(010)and(100)planes of MFI crystals,respectively.During the crystallization process,the mother plate was initially formed on the surface of the amorphous solid gel,while a set of parallel plates perpendicularly grew on its surface,via a homogeneous nucleation mechanism.The mother plate and the perpendicular plates had a similar thickness of 100-200 nm and were characterized by considerably shortened straight and zigzag 10 member ring pores,respectively.This unique intergrowth structure greatly facilitated the diffusion of the reactive molecules in HZSM-5 crystals during methanol conversion to hydrocarbons.展开更多
In a magnetic nanostripe, the effects of perpendicular magnetic anisotropy（PMA） on the current-driven horizontal motion of vortex wall along the stripe and the vertical motion of the vortex core are studied by micro...In a magnetic nanostripe, the effects of perpendicular magnetic anisotropy（PMA） on the current-driven horizontal motion of vortex wall along the stripe and the vertical motion of the vortex core are studied by micromagnetic simulations.The results show that the horizontal and vertical motion can generally be monotonously enhanced by PMA. However, when the current is small, a nonmonotonic phenomenon for the horizontal motion is found. Namely, the velocity of the horizontal motion firstly decreases and then increases with the increase of the PMA. We find that the reason for this is that the PMA can firstly increase and then decrease the confining force induced by the confining potential energy. In addition, the PMA always enhances the driving force induced by the current.展开更多
Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- net...Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- netic anisotropy density （Kef0 for Ta（3）/Pt（2）/[Co（0.3）/ Ni（0.6）/Au（0.3）]× 3/Co（0.3）/Pt（1）/Ta（3） （in nm） keeps at 0.48 × 105 J·m^-3. Scanning transmission electron micro- scopy-high-angle annular dark field （STEM-HAADF） analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Com- pared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices （MRAM）.展开更多
The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of ...The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of the samples were measured by vibrating sample magnetometer(VSM) and X-ray diffraction(XRD) and highresolution transmission electron microscopy(HRTEM),respectively.It is found that the PMA is strongly dependent on the interface where Fe layer was doped.When Fe layer was doped at Co/Pt interface where Pt was deposited on Co,the PMA decreases monotonically with Fe layer thickness(tFe) increasing.However,when Fe layer was doped at Pt/Co interface where Co was deposited on Pt,the PMA shows a peak at t_(Fe)=0.1 nm.It is considered that the PMA variation is mainly due to the tuning in the electron occupation states of 3 d orbits at Fe-doped Pt/Co interface.Furthermore,the annealing stability of PMA can also be improved when Fe layer was doped at Pt/Co interface.HRTEM results demonstrate that the magnetic anisotropy evolution is mainly caused by anneal-induced interdiffusion.展开更多
Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isot...Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isotropic anisotropic magnetoresistance(AMR),AMR with geometric size effect,and interfacial effect.A reversal in sign of perpendicular AMR is found in the film CoO(3 nm)/Co(3 nm)/Pt(3 nm)compared to the film CoO(3 nm)/Co(3 nm)/CoO(3 nm),which is associated with Pt.Moreover,perpendicular AMR is tunable in the films CoO(3 nm)/Co(3 nm)/CoO(t)/Pt(3 nm)and CoO(3 nm)/Co(3 nm)/Pt(t)/CoO(3 nm)at will,with either positive or negative value,by varying the inserting layer thickness.The electronic structure information of the samples was measured by X-ray photoelectron spectroscopy(XPS).The spin-related transport and XPS results manifest that magnetic proximity effect,surface scattering,together with oxygen migration contribute to the tunable function of Pt.展开更多
Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)A...Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)Al(CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy(PMA) from 3.41 Merg/cm^3 to 1.88 Merg/cm^3 with the thickness increasing from 10 nm to 30 nm is found,attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.展开更多
Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. ...Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.展开更多
We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputterin...We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.展开更多
Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetizatio...Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective zcomponent torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future.展开更多
A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions ...A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions were studied by grain growth simulation.It is found that the cross-track-averaged magnetization changes little between the L1_(0)FePt medium with uniform or non-uniform grain size distribution.展开更多
基金supported by the Beijing Natural Science Foundation(Grant No.Z230006)the National Key Research and Development Program of China(Grant No.2022YFA1204000)the National Natural Science Foundation of China(Grant Nos.12274405 and 12393831)。
文摘We report the development of the[Pt_(0.75)Ti_(0.25)/Co-Ni multilayer/Ta]_n superlattice with strong spin-orbit torque,large perpendicular magnetic anisotropy,and remarkably low switching current density.We demonstrate that the efficiency of the spin-orbit torque increases nearly linearly with the repetition number n,which is in excellent agreement with the spin Hall effect of the Pt_(0.75)Ti_(0.25)being essentially the only source of the observed spin-orbit torque.The perpendicular magnetic anisotropy field is also substantially enhanced by more than a factor of 2 as n increases from 1 to6.The[Pt_(0.75)Ti_(0.25)/Co-Ni multilayers/Ta]_n superlattice additionally exhibits deterministic,low-current-density magnetization switching despite the very large total layer thicknesses.The unique combination of strong spin-orbit torque,robust perpendicular magnetic anisotropy,low-current-density switching,and excellent high thermal stability makes the[Pt_(0.75)Ti_(0.25)/Co-Ni multilayer/Ta]_n superlattice a highly compelling material candidate for ultrafast,energy-efficient,and long-data-retention spintronic technologies.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1204000)the Beijing National Natural Science Foundation(Grant No.Z230006)the National Natural Science Foundation of China(Grant Nos.12304155 and 12274405).
文摘The development of magnetic heterostructures with strong perpendicular magnetic anisotropy(PMA),strong spin-orbit torques(SOTs),low impedance,and good integration compatibility at the same time is central for high-performance spintronic memory and computing applications.Here,we report the development of the PMA superlattice[Pt/Co/W]_(n)that can be sputtered-deposited on commercial oxidized silicon substrates and has giant SOTs,strong uniaxial PMA of≈9.2 Merg/cm^(3),and rigid macrospin performance.The damping-like and field-like SOTs of the[Pt/Co/W]_(n)superlattices exhibit a linear increase with the repeat number n and reach the giant values of 225%and-33%(two orders of magnitude greater than that in clean-limit Pt)at n=12,respectively.The damping-like SOT is also of the opposite sign and much greater in magnitude than the field-like SOT,regardless of the number n.These results clarify that the spin current that generates SOTs in the[Pt/Co/W]_(n)superlattices arises predominantly from the spin Hall effect rather than bulk Rashba spin splitting,providing a unified understanding of the SOTs in these superlattices.We also demonstrate deterministic switching in thickerthan-50-nm PMA[Pt/Co/W]_(12)superlattices at a low current density.This work establishes the[Pt/Co/W]_(n)superlattice as a compelling material candidate for ultra-fast,low-power,long-retention nonvolatile spintronic memory and computing technologies.
基金Project supported by Shandong Provincial Natural Science Foundation,China(Grant No.ZR2022ME059)。
文摘Pd/Co_(2)MnSi(CMS)/Co/Pd multilayer films were designed based on the idea of combining highly spin-polarized materials with strong perpendicular magnetic anisotropy(PMA)films.The PMA of Pd/CMS/Co/Pd multilayer films was studied by optimizing the growth conditions and thickness of each film layer.The optimal structure of the multilayer films was Pd(6 nm)/CMS(5 nm)/Co(2 nm)/Pd(1 nm).Its abnormal Hall resistance(R_(Hall)),coercivity(H_(c))and effective magnetic anisotropy constant(Keff)are 0.08Ω,284 Oe and 1.36 Merg/cm^(3),respectively,which are 100%,492%,and 183%higher than the corresponding values(0.04Ω,48 Oe,and 0.48 Merg/cm^(3))of the Pd(6 nm)/Co(1 nm)/Pd(3 nm)trilayer films.The analysis shows that the increases of the above values are the result of the Pd/CMS interface effect and CMS/Co interface ferromagnetic(FM)coupling,and that it is closely related to the thickness of each film layer in the multilayer films and the growth conditions of the multilayer films.
文摘BaFe_(12)O_(19)(BaM)thin films with thicknesses ranging from 15 nm–200 nm were deposited on Al_(2)O_(3)(0001)substrates by pulsed laser deposition(PLD).X-ray diffraction patterns show that a buffer layer with a thickness of nearly 60 nm forms on the substrate,and then a c-axis perpendicularly oriented Ba M thin film grows on the buffer layer.Atomic force microscopy results indicate that the Ba M thin film exhibits a spiral island growth mode on the buffer layer.Magnetic hysteresis loop results confirm that the buffer layer exhibits no significant magnetic anisotropy,while the Ba M thin film exhibits perpendicular magnetic anisotropy.The out-of-plane coercivity decreases with increasing Ba M thin-film thickness due to the combined effect of grain size growth and lattice strain relaxation.The 200 nm thick film exhibits optimum magnetic properties with M_(s)=319 emu/cm^(3) and H_(c)=1546 Oe.
基金financially supported by the National Natural Science Foundation of China (Nos. 11174020, 51331002, and 51371027)the Fundamental Research Funds for the Central Universities FRF-SD-12-011A
文摘Pseudo spin valves（SVs） exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt（5.0 nm）/[Co（0.4 nm）/Pt（0.6 nm）]3/Co（0.4 nm）/Cu（3.0 nm）and Cu（3.0 nm）/[Co（0.4 nm）/Pt（1.5 nm）]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity（HC） of both layers. The perpendicular giant magnetoresistance（GMR） of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV.
基金This work is financially supported by the National Natural Science Foundation of China (No. 10574085) Natural Science Foundation ofShanxi Province, China (No. 20041032).
文摘[FePt/Ag]n multilayers were deposited on glass substrates by RF magnetron sputtering and ex situ annealed at 550℃ for 30 min. The effects of inserted Ag layer thickness and the number of bilayer repetitions （n） on the structure and magnetic properties of the multilayers were investigated. It was found that the difference between in-plane and out-of-plane coercivities varied with an increase of inserted Ag layer thickness in the [FePt 2 nm/Ag x nm]10 multilayers. The ratio of out-of-plane coercivity to in-plane coercivity reached the maximum value with the Ag layer thickness of 5 nm, indicating that the Ag layer thickness plays an important role in obtaining perpendicular orientation. For the [FePt 2 nm/Ag 5 um]n multilayers, perpendicular orientation is also influenced by n. The maximum value of the ratio of out-of-plane coercivity to in-plane coercivity appeared when n was given as 8. It was found that the [FePt 2 nm/Ag 5 nm]8 had a high perpendicular coercivity of 520 kA/m and a low in-plane one of 88 kA/m, which shows a strong perpendicular anisotropy.
基金the National Key R&D Program of China(Grant No.2018YFB1306100)China Postdoctoral Science Foundation(Grant No.2019M653607)the Fundamental Research Funds for the Central Universities。
文摘Graphene-based materials on wearable electronics and bendable displays have received considerable attention for the mechanical flexibility,superior electrical conductivity,and high surface area,which are proved to be one of the most promising candidates of stretching and wearable sensors.However,polarized electric charges need to overcome the barrier of graphene sheets to cross over flakes to penetrate into the electrode,as the graphene planes are usually parallel to the electrode surface.By introducing electron-induced perpendicular graphene(EIPG)electrodes incorporated with a stretchable dielectric layer,a flexible and stretchable touch sensor with"in-sheet-chargestransportation"is developed to lower the resistance of carrier movement.The electrode was fabricated with porous nanostructured architecture design to enable wider variety of dielectric constants of only 50-μm-thick Ecoflex layer,leading to fast response time of only 66 ms,as well as high sensitivities of 0.13 kPa-1 below 0.1 kPa and 4.41 MPa-1 above 10 kPa,respectively.Moreover,the capacitance-decrease phenomenon of capacitive sensor is explored to exhibit an object recognition function in one pixel without any other integrated sensor.This not only suggests promising applications of the EIPG electrode in flexible touch sensors but also provides a strategy for internet of things security functions.
文摘ZSM-5 plates with a perpendicular intergrowth structure was synthesized by using a simple amine as the structure directing agent under hydrothermal conditions,in which the mother plate and the perpendicularly standing plates oriented along the(010)and(100)planes of MFI crystals,respectively.During the crystallization process,the mother plate was initially formed on the surface of the amorphous solid gel,while a set of parallel plates perpendicularly grew on its surface,via a homogeneous nucleation mechanism.The mother plate and the perpendicular plates had a similar thickness of 100-200 nm and were characterized by considerably shortened straight and zigzag 10 member ring pores,respectively.This unique intergrowth structure greatly facilitated the diffusion of the reactive molecules in HZSM-5 crystals during methanol conversion to hydrocarbons.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11247026 and 11374253)
文摘In a magnetic nanostripe, the effects of perpendicular magnetic anisotropy（PMA） on the current-driven horizontal motion of vortex wall along the stripe and the vertical motion of the vortex core are studied by micromagnetic simulations.The results show that the horizontal and vertical motion can generally be monotonously enhanced by PMA. However, when the current is small, a nonmonotonic phenomenon for the horizontal motion is found. Namely, the velocity of the horizontal motion firstly decreases and then increases with the increase of the PMA. We find that the reason for this is that the PMA can firstly increase and then decrease the confining force induced by the confining potential energy. In addition, the PMA always enhances the driving force induced by the current.
基金financially supported by the National Natural Science Foundation of China(Nos.51101012, 51271211,51331002,51371025,51371027,51471028 and 51571017)the National Key Scientific Research Projects of China(No. 2015CB921502)+1 种基金the Beijing Nova Program(No.Z141103001814039)the Fundamental Research Funds for the Central Universities(No. FRF-TP-14-002C1)
文摘Enhancement of post-annealing stability in Co/ Ni multilayers with perpendicular magnetic anisotropy （PMA） was obtained by inserting Au layers into Ni/Co interfaces. After annealing at 350 ℃, the effective mag- netic anisotropy density （Kef0 for Ta（3）/Pt（2）/[Co（0.3）/ Ni（0.6）/Au（0.3）]× 3/Co（0.3）/Pt（1）/Ta（3） （in nm） keeps at 0.48 × 105 J·m^-3. Scanning transmission electron micro- scopy-high-angle annular dark field （STEM-HAADF） analysis shows that the diffusion between Ni and Co layers is obstructed by the Au insertion layers among them, which is responsible for the post-annealing stability enhancement of the multilayers. Multilayers with Pt insertion layers were also investigated as reference samples in this work. Com- pared with Pt-layer-inserted Co/Ni multilayers, the Au insertion layers are found to bring seldom interfacial PMA to the multilayers, making it competitive in being employed to enhance the post-annealing stability of PMA Co/Ni multilayers which are used for magnetic random access memory devices （MRAM）.
基金financially supported by the National Natural Science Foundation of China (Nos.51371027 and 51331002)the National Key Scientific Research Projects of China (No.2015CB921502)the Ph.D.Programs Foundation of Ministry of Education (No.20120006130002)。
文摘The effect of ultrathin Fe layer on perpendicular magnetic anisotropy(PMA) in magnetron-sputtered Co/Pt multilayers was investigated by magnetic measurements.Magnetization hysteresis(M-H) loops and microstructures of the samples were measured by vibrating sample magnetometer(VSM) and X-ray diffraction(XRD) and highresolution transmission electron microscopy(HRTEM),respectively.It is found that the PMA is strongly dependent on the interface where Fe layer was doped.When Fe layer was doped at Co/Pt interface where Pt was deposited on Co,the PMA decreases monotonically with Fe layer thickness(tFe) increasing.However,when Fe layer was doped at Pt/Co interface where Co was deposited on Pt,the PMA shows a peak at t_(Fe)=0.1 nm.It is considered that the PMA variation is mainly due to the tuning in the electron occupation states of 3 d orbits at Fe-doped Pt/Co interface.Furthermore,the annealing stability of PMA can also be improved when Fe layer was doped at Pt/Co interface.HRTEM results demonstrate that the magnetic anisotropy evolution is mainly caused by anneal-induced interdiffusion.
基金financially supported by the National Key Science Research Projects of China(No.2015CB921502)the National Natural Science Foundation of China(Nos.51331002,51371025,51471028,11504019)the Postdoctoral Science Foundation of China(No.2016M590043)。
文摘Transport properties of magnetron-sputtered CoO/Co/Pt heterostructures were investigated by physical property measurement system.Different types of magnetoresistance are observed in the heterostructures,including isotropic anisotropic magnetoresistance(AMR),AMR with geometric size effect,and interfacial effect.A reversal in sign of perpendicular AMR is found in the film CoO(3 nm)/Co(3 nm)/Pt(3 nm)compared to the film CoO(3 nm)/Co(3 nm)/CoO(3 nm),which is associated with Pt.Moreover,perpendicular AMR is tunable in the films CoO(3 nm)/Co(3 nm)/CoO(t)/Pt(3 nm)and CoO(3 nm)/Co(3 nm)/Pt(t)/CoO(3 nm)at will,with either positive or negative value,by varying the inserting layer thickness.The electronic structure information of the samples was measured by X-ray photoelectron spectroscopy(XPS).The spin-related transport and XPS results manifest that magnetic proximity effect,surface scattering,together with oxygen migration contribute to the tunable function of Pt.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2017YFB0405701 and2018YFB0407601the National Natural Science Foundation of China under Grant Nos U1632264 and 11874349the Key Research Project of Frontier Science of the Chinese Academy of Sciences under Grant Nos QYZDY-SSW-JSC015 and XDPB12
文摘Off-stoichiometric full-Heusler alloy Co_2 MnAl thin films with different thicknesses are epitaxially grown on GaAs(001) substrates by molecular-beam epitaxy. The composition of the films, close to Co_(1.65)Mn_(1.35)Al(CMA),is determined by x-ray photoelectron spectroscopy and energy dispersive spectroscopy. Tunable perpendicular magnetic anisotropy(PMA) from 3.41 Merg/cm^3 to 1.88 Merg/cm^3 with the thickness increasing from 10 nm to 30 nm is found,attributed to the relaxation of residual compressive strain. Moreover, comparing with the ultrathin CoFeB/MgO used in the conventional perpendicular magnetic tunnel junction, the CMA electrode has a higher magnetic thermal stability with more volume involved. The PMA in CMA films is sustainable up to 300℃,compatible with semiconductor techniques. This work provides a possibility for the development of perpendicular magnetized full-Heusler compounds with high thermal stability and spin polarization.
基金supported by the State Key Project of Fundamental Research of Ministry of Science and Technology,China(Grant No.2010CB934400)the National Natural Science Foundation of China(Grant Nos.51229101 and 11374351)
文摘Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy （PMA） are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy （PMA） are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L10-ordered （Co, Fe）/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, AU]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
基金Project supported by the National Key R&D Program of China(Grant No.2017YFB0405700)the National Natural Science Foundation of China(Grant Nos.11474272 and 61774144)+1 种基金Beijing Natural Science Foundation Key Program,China(Grant No.Z190007)the Chinese Academy of Sciences(Grant Nos.QYZDY-SSW-JSC020,XDB44000000,and XDB28000000)。
文摘We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62171013 and 61704005)the National Key Research and Development Program of China(Grant Nos.2021YFB3601303,2021YFB3601304,and 2021YFB3601300)+1 种基金the Beijing Municipal Science and Technology Project,China(Grant No.Z201100004220002)the Fundamental Research Funds for the Central Universities,China(Grant No.YWF-21-BJ-J-1043)。
文摘Spin-orbit torque(SOT)has been considered as one of the promising technologies for the next-generation magnetic random access memory(MRAM).So far,SOT has been widely utilized for inducing various modes of magnetization switching.However,it is a challenge that so many multiple modes of magnetization switching are integrated together.Here we propose a method of implementing both unipolar switching and bipolar switching of the perpendicular magnetization within a single SOT device.The mode of switching can be easily changed by tuning the amplitude of the applied current.We show that the field-like torque plays an important role in switching process.The field-like torque induces the precession of the magnetization in the case of unipolar switching,however,the field-like torque helps to generate an effective zcomponent torque in the case of bipolar switching.In addition,the influence of key parameters on the mode of switching is discussed,including the field-like torque strength,the bias field,and the current density.Our proposal can be used to design novel reconfigurable logic circuits in the near future.
文摘A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions were studied by grain growth simulation.It is found that the cross-track-averaged magnetization changes little between the L1_(0)FePt medium with uniform or non-uniform grain size distribution.
