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Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography 被引量:3
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作者 Gen Yue Yu Lei +2 位作者 Jun-Hui Die Hai-Qiang Jia Hong Chen 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期56-59,共4页
We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions... We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications. 展开更多
关键词 exp Fabrication of 4-Inch Nano patterned wafer with High Uniformity by Laser Interference Lithography
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Planarization properties of an alkaline slurry without an inhibitor on copper patterned wafer CMP 被引量:17
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作者 王辰伟 刘玉岭 +3 位作者 田建颖 牛新环 郑伟艳 岳红维 《Journal of Semiconductors》 EI CAS CSCD 2012年第11期134-138,共5页
The chemical mechanical polishing/planarization(CMP) performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate(DR) and the polish rate(PR) show that the alkal... The chemical mechanical polishing/planarization(CMP) performance of an inhibitor-free alkaline copper slurry is investigated.The results of the Cu dissolution rate(DR) and the polish rate(PR) show that the alkaline slurry without inhibitors has a relatively high copper removal rate and considerable dissolution rate.Although the slurry with inhibitors has a somewhat low DR,the copper removal rate was significantly reduced due to the addition of inhibitors(Benzotriazole,BTA).The results obtained from pattern wafers show that the alkaline slurry without inhibitors has a better planarization efficacy;it can planarize the uneven patterned surface during the excess copper removal.These results indicate that the proposed inhibitor-free copper slurry has a considerable planarization capability for CMP of Cu pattern wafers,it can be applied in the first step of Cu CMP for copper bulk removal. 展开更多
关键词 planarization alkaline copper slurry inhibitor free copper pattern wafer
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Wafer Defect Map Pattern Recognition Based on Improved ResNet
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作者 YANG Yining WEI Honglei 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2024年第S01期81-88,共8页
The defect detection of wafers is an important part of semiconductor manufacturing.The wafer defect map formed from the defects can be used to trace back the problems in the production process and make improvements in... The defect detection of wafers is an important part of semiconductor manufacturing.The wafer defect map formed from the defects can be used to trace back the problems in the production process and make improvements in the yield of wafer manufacturing.Therefore,for the pattern recognition of wafer defects,this paper uses an improved ResNet convolutional neural network for automatic pattern recognition of seven common wafer defects.On the basis of the original ResNet,the squeeze-and-excitation(SE)attention mechanism is embedded into the network,through which the feature extraction ability of the network can be improved,key features can be found,and useless features can be suppressed.In addition,the residual structure is improved,and the depth separable convolution is added to replace the traditional convolution to reduce the computational and parametric quantities of the network.In addition,the network structure is improved and the activation function is changed.Comprehensive experiments show that the precision of the improved ResNet in this paper reaches 98.5%,while the number of parameters is greatly reduced compared with the original model,and has well results compared with the common convolutional neural network.Comprehensively,the method in this paper can be very good for pattern recognition of common wafer defect types,and has certain application value. 展开更多
关键词 ResNet deep learning machine vision wafer defect map pattern recogniton
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Spatial evolution of friction of a textured wafer surface 被引量:3
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作者 Huaping XIAO Ke WANG +3 位作者 Grant FOX Michel BELIN Julien FONTAINE Hong LIANG 《Friction》 SCIE EI CAS 2013年第1期92-97,共6页
Mechanical failure of integrated circuits and micro-electro-mechanical systems(MEMS)demands new understanding of friction in small devices.In present research,we demonstrated an in situ approach to measure sliding fri... Mechanical failure of integrated circuits and micro-electro-mechanical systems(MEMS)demands new understanding of friction in small devices.In present research,we demonstrated an in situ approach to measure sliding friction of a patterned surface composing multi-materials and structures.The effects of materials and surface morphology on friction and electrical contact resistance were investigated.The material transfer at the interface of dissimilar materials was found to play dominating roles in friction.The current work provides important insights from the fundamentals of friction that benefit the design of new micro-devices. 展开更多
关键词 micro-electro-mechanical systems(MEMS) patterned wafers FRICTION transfer wear electrical contact resistance
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