AlGaN-based deep-ultraviolet(DUV)light-emitting diodes(LEDs)still face challenges in achieving high-quality AlGaN material and extracting the strong transverse magnetic(TM)mode emission(which is influenced by valence ...AlGaN-based deep-ultraviolet(DUV)light-emitting diodes(LEDs)still face challenges in achieving high-quality AlGaN material and extracting the strong transverse magnetic(TM)mode emission(which is influenced by valence band splitting inversion).Particularly,these challenges impact devices with wavelengths shorter than 250 nm on their optical power and wall-plug efficiency(WPE)due to an increased proportion of TM mode.Here,the plasmonic omni-directional reflective pad arrays were designed and introduced into the p-contact layer to enhance the light extraction for sub-250 nm DUV LEDs.Meanwhile,a novel device structure,to our knowledge,was put forward,integrating uniformly distributed n-type contact rods as an efficient light guide channel.The theoretical simulation demonstrated a light extraction improvement since these embedded plasmonic reflective pad arrays effectively altered the wavevector of transverse electric(TE)and TM mode photons from the quantum wells.An average enhancement of 12.5%in optical output power was attained in 249.5 nm DUV LEDs through the usage of the optimized diameter of the plasmonic pads.Furthermore,a quartz lens bonded with fluorine resin was introduced to improve refractive index matching at the light output interface,and a high optical power of 3.45 mW was achieved from the original 2.55 mW at a driven current of 100 mA.展开更多
基金National Key Research and Development Program of China(2022YFB3605103)National Natural Science Foundation of China(62234001)+1 种基金Key Scientific and Technological Program of Xiamen(3502Z20231016)Fundamental Research Funds for the Central Universities(20720240067)。
文摘AlGaN-based deep-ultraviolet(DUV)light-emitting diodes(LEDs)still face challenges in achieving high-quality AlGaN material and extracting the strong transverse magnetic(TM)mode emission(which is influenced by valence band splitting inversion).Particularly,these challenges impact devices with wavelengths shorter than 250 nm on their optical power and wall-plug efficiency(WPE)due to an increased proportion of TM mode.Here,the plasmonic omni-directional reflective pad arrays were designed and introduced into the p-contact layer to enhance the light extraction for sub-250 nm DUV LEDs.Meanwhile,a novel device structure,to our knowledge,was put forward,integrating uniformly distributed n-type contact rods as an efficient light guide channel.The theoretical simulation demonstrated a light extraction improvement since these embedded plasmonic reflective pad arrays effectively altered the wavevector of transverse electric(TE)and TM mode photons from the quantum wells.An average enhancement of 12.5%in optical output power was attained in 249.5 nm DUV LEDs through the usage of the optimized diameter of the plasmonic pads.Furthermore,a quartz lens bonded with fluorine resin was introduced to improve refractive index matching at the light output interface,and a high optical power of 3.45 mW was achieved from the original 2.55 mW at a driven current of 100 mA.
