The Laser Induced Breakdown Spectroscopy (LIBS) is a fast, non-contact, no sample preparation analytic technology;it is very suitable for on-line analysis of alloy composition. In the copper smelting industry, analysi...The Laser Induced Breakdown Spectroscopy (LIBS) is a fast, non-contact, no sample preparation analytic technology;it is very suitable for on-line analysis of alloy composition. In the copper smelting industry, analysis and control of the copper alloy concentration affect the quality of the products greatly, so LIBS is an efficient quantitative analysis tech- nology in the copper smelting industry. But for the lead brass, the components of Pb, Al and Ni elements are very low and the atomic emission lines are easily submerged under copper complex characteristic spectral lines because of the matrix effects. So it is difficult to get the online quantitative result of these important elements. In this paper, both the partial least squares (PLS) method and the calibration curve (CC) method are used to quantitatively analyze the laser induced breakdown spectroscopy data which is obtained from the standard lead brass alloy samples. Both the major and trace elements were quantitatively analyzed. By comparing the two results of the different calibration method, some useful results were obtained: both for major and trace elements, the PLS method was better than the CC method in quantitative analysis. And the regression coefficient of PLS method is compared with the original spectral data with background interference to explain the advantage of the PLS method in the LIBS quantitative analysis. Results proved that the PLS method used in laser induced breakdown spectroscopy was suitable for simultaneous quantitative analysis of different content elements in copper smelting industry.展开更多
A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of t...A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n＋-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n＋-regions on the interface by the force with ionized donors in the undepleted n＋-regions, and therefore effectively enhance the electric field of the dielectric buried layer （Ei） and increase the breakdown voltage （BV）, thereby alleviating the self-heating effect （SHE） by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and El of the CI PSOI LDMOS increase to 631 V and 584 V/μm from 246 V and 85.8 V/μm for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.展开更多
An experimental setup has been designed and realized in order to optimize the characteristics of laser-induced breakdown spectroscopy system working in various pressure environments. An approach combined the normaliza...An experimental setup has been designed and realized in order to optimize the characteristics of laser-induced breakdown spectroscopy system working in various pressure environments. An approach combined the normalization methods with the partial least squares(PLS) method are developed for quantitative analysis of molybdenum(Mo) element in the multi-component alloy,which is the first wall material in the Experimental Advanced Superconducting Tokamak. In this study, the different spectral normalization methods(total spectral area normalization,background normalization, and reference line normalization) are investigated for reducing the uncertainty and improving the accuracy of spectral measurement. The results indicates that the approach of PLS based on inter-element interference is significantly better than the conventional PLS methods as well as the univariate linear methods in the various pressure for molybdenum element analysis.展开更多
A new partial SOI （silion-on-insulator） （PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown character...A new partial SOI （silion-on-insulator） （PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field （Er） in the dielectric buried oxide layer （BOX） and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage （BV）. The values of E1 and BV of an HI PSOI with a 2-~m thick SOI layer over a 1-~tm thick buried layer are 580V/~m and -582 V, respectively, compared with 81.5 V/p.m and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect （SHE）. Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.展开更多
A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge...A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.展开更多
A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field...A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.展开更多
Laser-induced breakdown spectroscopy （LIBS） has become a powerful technology in geological applications. The correct identification of rocks and soils is critical to many geological projects. In this study, LIBS dat...Laser-induced breakdown spectroscopy （LIBS） has become a powerful technology in geological applications. The correct identification of rocks and soils is critical to many geological projects. In this study, LIBS database software with a user-friendly and intuitive interface is developed based on Windows, consisting of a database module and a sample identification module. The database module includes a basic database containing LIBS persistent lines for elements and a dedicated geological database containing LIBS emission lines for several rock and soil reference standards. The module allows easy use of the data. A sample identification module based on partial least squares discriminant analysis （PLS-DA） or support vector machine （SVM） algorithms enables users to classify groups of unknown spectra. The developed system was used to classify rock and soil data sets in a dedicated database and the results demonstrate that the system is capable of fast and accurate classification of rocks and soils, and is thus useful for the detection of geological materials.展开更多
文摘The Laser Induced Breakdown Spectroscopy (LIBS) is a fast, non-contact, no sample preparation analytic technology;it is very suitable for on-line analysis of alloy composition. In the copper smelting industry, analysis and control of the copper alloy concentration affect the quality of the products greatly, so LIBS is an efficient quantitative analysis tech- nology in the copper smelting industry. But for the lead brass, the components of Pb, Al and Ni elements are very low and the atomic emission lines are easily submerged under copper complex characteristic spectral lines because of the matrix effects. So it is difficult to get the online quantitative result of these important elements. In this paper, both the partial least squares (PLS) method and the calibration curve (CC) method are used to quantitatively analyze the laser induced breakdown spectroscopy data which is obtained from the standard lead brass alloy samples. Both the major and trace elements were quantitatively analyzed. By comparing the two results of the different calibration method, some useful results were obtained: both for major and trace elements, the PLS method was better than the CC method in quantitative analysis. And the regression coefficient of PLS method is compared with the original spectral data with background interference to explain the advantage of the PLS method in the LIBS quantitative analysis. Results proved that the PLS method used in laser induced breakdown spectroscopy was suitable for simultaneous quantitative analysis of different content elements in copper smelting industry.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60436030 and 60806025)
文摘A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n＋-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n＋-regions on the interface by the force with ionized donors in the undepleted n＋-regions, and therefore effectively enhance the electric field of the dielectric buried layer （Ei） and increase the breakdown voltage （BV）, thereby alleviating the self-heating effect （SHE） by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and El of the CI PSOI LDMOS increase to 631 V and 584 V/μm from 246 V and 85.8 V/μm for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.
基金supported by the National Magnetic Confinement Fusion Science Program of China (No. 2017YFE0301304)National Natural Science Foundation of China (Nos. 11 475 039, 11 605 023, 11 705 020)+2 种基金China Postdoctoral Science Foundation (Nos. 2016M591423, 2017T100172, 2018M630285)the Fundamental Research Funds for the Central Universities (Nos. DUT15RC(3)072, DUT17RC(4)53, DUT18LK38)Liaoning Provincial Natural Science Foundation of China (No. 20 170 540 153)
文摘An experimental setup has been designed and realized in order to optimize the characteristics of laser-induced breakdown spectroscopy system working in various pressure environments. An approach combined the normalization methods with the partial least squares(PLS) method are developed for quantitative analysis of molybdenum(Mo) element in the multi-component alloy,which is the first wall material in the Experimental Advanced Superconducting Tokamak. In this study, the different spectral normalization methods(total spectral area normalization,background normalization, and reference line normalization) are investigated for reducing the uncertainty and improving the accuracy of spectral measurement. The results indicates that the approach of PLS based on inter-element interference is significantly better than the conventional PLS methods as well as the univariate linear methods in the various pressure for molybdenum element analysis.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060)the Funds of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904)the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721)
文摘A new partial SOI （silion-on-insulator） （PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field （Er） in the dielectric buried oxide layer （BOX） and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage （BV）. The values of E1 and BV of an HI PSOI with a 2-~m thick SOI layer over a 1-~tm thick buried layer are 580V/~m and -582 V, respectively, compared with 81.5 V/p.m and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect （SHE）. Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.
基金supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201)the National Natural Science Foundation of China (Grant No. 61176069)the National Defense Pre-Research of China (Grant No. 51308020304)
文摘A novel super-junction lateral double-diffused metal-oxide semiconductor （SJ-LDMOS） with a partial lightly doped P pillar （PD） is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage （BV）. In addition, due to the same conduction paths, the specific on-resistance （Ron,sp） of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.
基金Project supported by the National Natural Science Foundation of China(Grant No.61376079)the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-11-0062)the Postdoctoral Science Foundation of China(Grant Nos.2012T50771 and XM2012004)
文摘A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.
基金supported by National Major Scientific Instruments and Equipment Development Special Funds,China(No.2011YQ030113)
文摘Laser-induced breakdown spectroscopy （LIBS） has become a powerful technology in geological applications. The correct identification of rocks and soils is critical to many geological projects. In this study, LIBS database software with a user-friendly and intuitive interface is developed based on Windows, consisting of a database module and a sample identification module. The database module includes a basic database containing LIBS persistent lines for elements and a dedicated geological database containing LIBS emission lines for several rock and soil reference standards. The module allows easy use of the data. A sample identification module based on partial least squares discriminant analysis （PLS-DA） or support vector machine （SVM） algorithms enables users to classify groups of unknown spectra. The developed system was used to classify rock and soil data sets in a dedicated database and the results demonstrate that the system is capable of fast and accurate classification of rocks and soils, and is thus useful for the detection of geological materials.
