Wide-bandgap two-dimensional (2D) β-TeO_(2) has been reported as a high-mobility p-type transparent semiconductor [Nat. Electron. 4 277 (2021)], attracting significant attention. This "breakthrough" not onl...Wide-bandgap two-dimensional (2D) β-TeO_(2) has been reported as a high-mobility p-type transparent semiconductor [Nat. Electron. 4 277 (2021)], attracting significant attention. This "breakthrough" not only challenges the conventional characterization of TeO_(2) as an insulator but also conflicts with the anticipated difficulty in hole doping of TeO_(2) by established chemical trends. Notably, the reported Fermi level of 0.9 eV above the valence band maximum actually suggests that the material is an insulator, contradicting the high hole density obtained by Hall effect measurement. Furthermore, the detected residual Se and the possible reduced elemental Te in the 2D β-TeO_(2) samples introduces complexity, considering that elemental Se, Te, and Te_(1−x)Se_(x) themselves are high-mobility p-type semiconductors. Therefore, doubts regarding the true cause of the p-type conductivity observed in the 2D β-TeO_(2) samples arise. In this Letter, we employ density functional theory calculations to illustrate that TeO_(2), whether in its bulk forms of α-, β-, or γ-TeO_(2), or in the 2D β-TeO_(2) nanosheets, inherently exhibits insulating properties and poses challenges in carrier doping due to its shallow conduction band minimum and deep valence band maximum. Our findings shed light on the insulating properties and doping difficulty of TeO_(2), contrasting with the claimed p-type conductivity in the 2D β-TeO_(2) samples, prompting inquiries into the true origin of the p-type conductivity.展开更多
p-type transparent oxide semiconductors(TOSs)are significant in the semiconductor industry,driving advancements in optoelectronic technologies for transparent electronic devices with unique properties.The recent disco...p-type transparent oxide semiconductors(TOSs)are significant in the semiconductor industry,driving advancements in optoelectronic technologies for transparent electronic devices with unique properties.The recent discovery of p-type behavior in SeO_(2) has stimulated interest and confusion in the scientific community.In this Letter,we employ density functional theory calculations to reveal the intrinsic intrinsic insulating characteristics of SeO_(2) and highlight the substantial challenges in carrier doping.Our electronic structure analyses indicate that the Se 5^(2) states are energetically positioned too low to effectively interact with the O 2p orbitals,resulting in a valence band maximum(VBM)primarily dominated by the O 2p orbitals.The deep and localized nature of the VBM of SeO_(2) limits its potential as a high-mobility p-type TOS.Defect calculations demonstrate that all intrinsic defects in SeO_(2) exhibit deep transition levels within the bandgap.Regardless of the synthesis conditions,the Fermi level consistently resides in the mid-gap region.Furthermore,deep intrinsic acceptors and donors exhibit negative formation energies in the n-type and p-type regions,respectively,facilitating spontaneous formation and impeding external doping efforts.Thus,the reported p-type conductivity in SeO_(2) samples is unlikely to be intrinsic and is more plausibly attributable to reduced elemental Se,a well-known p-type semiconductor.展开更多
Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the shor...Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.展开更多
Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite ...Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.展开更多
The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave meth...The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.展开更多
The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attribute...The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.展开更多
We investigate the electronic structures and magnetic properties of ZnO doped with N,Cu,and(Cu+N)by using a first principles method and considering the strong correlation effect.It is interesting to compare these thre...We investigate the electronic structures and magnetic properties of ZnO doped with N,Cu,and(Cu+N)by using a first principles method and considering the strong correlation effect.It is interesting to compare these three systems.ZnO:N has weak p-type doping and unstable ferromagnetism,while ZnO:Cu becomes insulating due to the Jahn–Teller effect.Cu and N codoping can not only greatly improve the dopability of p-type doping accompanying the Jahn–Teller fading,but also enhance the ferromagnetism at the same time.The calculation results indicate that there is a win-win effect between N and Cu dopants in the ZnO:(Cu+N)system,which could possibly find applications in spintronics besides optoelectronics.展开更多
Cluster model with DV-Xαmethod is used to study the structural and electronic properties of the p-type doping of ZnSe.It is found that there is Jahn-Teller distortion for P doping and almost no Jahn-Teller distortion...Cluster model with DV-Xαmethod is used to study the structural and electronic properties of the p-type doping of ZnSe.It is found that there is Jahn-Teller distortion for P doping and almost no Jahn-Teller distortion for N doping,and that the impurity levels with respect to the maximum of valence band are 118 and 96meV for N and P doping,respectively.The reasons why N can serve as a better dopant than P for p-type ZnSe are discussed.展开更多
Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global inv...Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global investment in the manufacturing infrastructure associated with In Ga N material that has become the second most important semiconductor material after Si in the late 2010s[1,2].展开更多
The performance enhancement of MXene/semiconductor heterostructure-based light detectors is greatly restricted by the relatively small junction barrier due to the limited work function of MXenes.The work function of M...The performance enhancement of MXene/semiconductor heterostructure-based light detectors is greatly restricted by the relatively small junction barrier due to the limited work function of MXenes.The work function of MXenes can be largely adjusted to approach 600 meV through simple incorporation of V_(2)O_(5) via a charge transfer doping mechanism.Exploiting this strategy,the performance of MXene/GaN heterostructure-based deep ultraviolet(DUV)photodetectors has been greatly improved.Specifically,the photocurrent is enhanced by nearly 3 times,and the dark current is suppressed at the lowest order of magnitude,resulting in improved responsivity and specific detectivity of 121.6 mA/W and 2.23×10^(13) Jones,respectively,at 265 nm.The device also displays an ultralow dark current of 10^(-14) A,a fast response speed of 0.4 ms/15.1 ms,a large linear dynamic range exceeding 150 dB,and a high DUV/near ultraviolet rejection ratio of 2.41×10^(5).Owing to its good device performance,the detector is capable of sensing weak photon signals produced by a fire flame and functions as an optical receiver to transmit a text signal in a DUV light communication system.The proposed MXene doping method is expected to help develop MXene-based electronic/optoelectronic devices,and the present DUV photodetectors will find potential applications in DUV optoelectronic systems.展开更多
As a catalyst of the air cathode in zinc-air batteries,tungstic acid ferrous(FeWO_(4)),a nanoscale transition metal tungstate,shows a broad application prospect in the oxygen reduction reaction(ORR).While FeWO_(4)poss...As a catalyst of the air cathode in zinc-air batteries,tungstic acid ferrous(FeWO_(4)),a nanoscale transition metal tungstate,shows a broad application prospect in the oxygen reduction reaction(ORR).While FeWO_(4)possesses favorable electrochemical properties and thermodynamic stability,its intrinsic semiconductor characteristics result in a relatively slow electron transfer rate,limiting the ORR catalytic activity.In this work,the electronic structure of FeWO_(4)is significantly modulated by introducing phosphorus(P)atoms with abundant valence electrons.The P doping can adjust the electronic structure of FeWO_(4)and then optimize oxygen-containing intermediates'absorption/desorption efficiency to achieve improved ORR activity.Furthermore,the sodium chloride template is utilized to construct a porous carbon framework for anchoring phosphorus-doped iron tungstate(P-FeWO_(4)/PNC).The porous carbon skeleton provides numerous active sites for the absorption/desorption and redox reactions on the P-FeWO_(4)/PNC surface and serves as mass transport channels for reactants and intermediates.The P-FeWO_(4)/PNC demonstrates ORR performance(E1/2=0.86 V vs.RHE).Furthermore,the zinc-air batteries incorporating the P-FeWO_(4)/PNC composite demonstrate an increased peak power density(172.2 mW·cm^(-2)),high specific capacity(810.1 mAh·g^(-1)),and sustained long-term cycling stability lasting up to 240 h.This research not only contributes to the advancement of cost-effective tungsten-based non-precious metallic ORR catalysts,but also guides their utilization in zinc-air batteries.展开更多
Silica aerogel has broad applications in the field of high-temperature thermal insulation due to its low density,low thermal conductivity and high stability.However,its thermal insulation performance deteriorates sign...Silica aerogel has broad applications in the field of high-temperature thermal insulation due to its low density,low thermal conductivity and high stability.However,its thermal insulation performance deteriorates significantly at elevated temperatures exceeding 600℃,primarily due to the collapse of pore structure.Meanwhile,the shielding capacity of SiO_(2) aerogel to the infrared radiation at high temperature is rather low due to the intrinsic properties of SiO_(2).Herein,a strategy for improving the high-temperature stability and infrared shielding properties of SiO_(2) aerogel via Ca doping was explored.Calcium-doped silica aerogel(CSA)powders were prepared by Sol-Gel,hydrothermal,and ambient pressure drying(APD)techniques using water glass and anhydrous calcium chloride as precursors and trimethylchlorosilane as a hydrophobic modifier.The effects of Ca/Si molar ratio in the precursor and hydrothermal conditions(temperature and pH)on the crystalline properties,microscopic morphology and pore structure of CSAs were investigated.The results show that the Ca/Si molar ratio and hydrothermal treatment have significant effects on the microstructure and heat resistance of CSAs in the temperature range of 400-1000℃.The samples sintered at 1000℃have a high specific surface area of 100.1 m^(2)/g and a pore volume of 0.8705 cm^(3)/g,indicating that the CSA has good heat resistance.One-side insulation tests at temperatures up to 600℃show that the sample with a Ca/Si molar ratio of 1.0 has the best insulation performance,with a cold surface temperature of 450℃,which is 27℃lower than that of the pure silica aerogel.展开更多
Mn^(2+)-doped CsPbCl_(3)(Mn^(2+):CsPbCl_(3)) nanocrystals(NCs) have attracted considerable attention due to their unique strong and broad orange-red emission band,presenting promising applications in the field of phot...Mn^(2+)-doped CsPbCl_(3)(Mn^(2+):CsPbCl_(3)) nanocrystals(NCs) have attracted considerable attention due to their unique strong and broad orange-red emission band,presenting promising applications in the field of photoelectric devices.However,pristine Mn^(2+):CsPbCl_(3)NCs commonly suffer from low photoluminescence quantum yield(PL QY) and stability issues.Herein,we introduced europium ions(Eu^(3+))into Mn^(2+):CsPbCl_(3)NCs via the thermal injection synthesis method to obtain high performance Eu^(3+)and Mn^(2+)codoped CsPbCl_(3)(Eu^(3+)/Mn^(2+):CsPbCl_(3)) NCs.The maximum PL QY of the resulting Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs reaches up to 90.92%.It is found that the doping of Eu^(3+)ions significantly reduces the non-radiative recombination caused by high defect states,and improves the energy transfer efficiency from exciton to Mn^(2+),thereby boosting the PL performance.Moreover,doping Eu^(3+)ions notably improves the UV-light and water stability of Mn^(2+):CsPbCl_(3)NCs.We further demonstrate the application versatility of Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs in white light emitting diodes(WLEDs) and optical anticounterfeiting applications.This work provides a valuable perspective for the attainment of high performance Mn^(2+):CsPbCl_(3)NCs and lays a foundation for the codoping of other lanthanide ions to adjust the luminescence properties of Mn^(2+):CsPbCl_(3)NCs.展开更多
Herein,antibacterial silver‑doped fluorescent carbon dots(Ag‑CDs)were synthesized through a stepwise hydrothermal method,with polyethyleneimine(PEI),citric acid(CA),and silver nitrate(AgNO3)serving as precursors.The a...Herein,antibacterial silver‑doped fluorescent carbon dots(Ag‑CDs)were synthesized through a stepwise hydrothermal method,with polyethyleneimine(PEI),citric acid(CA),and silver nitrate(AgNO3)serving as precursors.The applicability and antimicrobial efficacy of these nanomaterials were systematically investigated for metal ion sensing.Experimental evidence demonstrated that the Ag‑CDs exhibited a pronounced fluorescence quenching response toward ferric ions(Fe^(3+)),enabling their quantitative determination via a linear concentration‑dependent relationship.These Ag‑CDs exhibited significant inhibitory effects on biofilm growth and disruption for both Escherichia coli and Staphylococcus aureus.Mechanism investigations indicate that Ag‑CDs induced the death of Escherichia coli and Pseudomonas aeruginosa by disrupting their bacterial morphology and structure,triggering the generation of intracellular reactive oxygen species(ROS),and impairing their antioxidant defense system.展开更多
Electrocatalytic carbon dioxide reduction is a crucial method for addressing energy issues and achieving carbon neutrality.Doping of Cu catalysts represents an effective approach to regulate electrocatalytic carbon di...Electrocatalytic carbon dioxide reduction is a crucial method for addressing energy issues and achieving carbon neutrality.Doping of Cu catalysts represents an effective approach to regulate electrocatalytic carbon dioxide reduction.This review article summarizes the research progress on improving the performance of Cu-based material electrocatalysts through doping regulation.The background,fundamental research,evaluation parameters,and methods for catalyst design,along with their influencing factors,are introduced.Emphasis is placed on the impact of doping with different elements(such as noble metals,transition metals,main-group metals,non-metals,etc.)on the performance of Cu-based catalysts,including the mechanisms for enhancing activity,selectivity,and stability.In-situ characterization techniques have revealed the structural evolution and catalytic mechanisms during the doping process.Mechanistic studies,leveraging the ever-advancing computational capabilities and high-throughput methods,have given rise to typical computational descriptors like volcano plots,free-energy diagrams,and machine-learning-based approaches.These descriptors have become key tools for screening high-efficiency catalysts in various application scenarios of the electrochemical carbon dioxide reduction reaction(CO_(2)RR).This article comprehensively summarizes the current research achievements and looks ahead to the future,indicating that strengthening the combination of theory and experiment and exploring industrial applications are the future research directions,aiming to provide a comprehensive reference for the development of highly efficient doped Cu-based electrocatalysts.展开更多
Synthetic dyes,particularly azo dyes,pose significant environmental and health risks due to their persistence,toxicity,and potential carcinogenicity.Zinc oxide(ZnO)is a promising photocatalyst for wastewater remediati...Synthetic dyes,particularly azo dyes,pose significant environmental and health risks due to their persistence,toxicity,and potential carcinogenicity.Zinc oxide(ZnO)is a promising photocatalyst for wastewater remediation,but its wide bandgap and rapid charge recombination limit its practical efficacy.Furthermore,conventional doping methods often rely on hazardous chemical precursors,undermining the sustainability of the overall approach.This review introduces a novel and sustainable paradigm:the utilization of biomass-derived precursors as green reagents for the in-situ synthesis and simultaneous phosphorus-nitrogen(P-N)co-doping of ZnO nanoparticles.We critically analyze how the intrinsic biochemical composition of biomass,rich in P,N,and other heteroatoms,facilitates this one-pot,eco-friendly functionalization.This integrated strategy merges the performance enhancement offered by advanced co-doping,such as extended visible-light absorption and suppressed charge recombination,with the core principles of green chemistry and circular economy.It offers a dual benefit:creating highly effective photocatalysts for the degradation of persistent pollutants and valorizing abundant agricultural or biological waste streams.Our comprehensive evaluation goes beyond description to critically assess the underlying mechanisms,comparative efficacy,scalability challenges,and future research directions of this emerging field.This review underscores the unique contribution of biomass-mediated synthesis to advancing sustainable nanotechnology for environmental applications.展开更多
Developing catalysts with excellent stability while significantly reducing the overpotential of the oxygen evolution reaction(OER) is crucial for advancing overall water splitting(OWS) systems.In this study,we synthes...Developing catalysts with excellent stability while significantly reducing the overpotential of the oxygen evolution reaction(OER) is crucial for advancing overall water splitting(OWS) systems.In this study,we synthesized the electrode material Ce-NiCo-LDHs@SnO_(2)/NF through a two-step hydrothermal reaction,where Ce-doped NiCo-LDHs are grown on nickel foam modified by a SnO_(2) layer.Ce doping adjusts the internal electronic distribution of Ni Co-LDHs,while the introduction of the SnO_(2) layer enhances electron transfer capability.Together,these factors contribute to the reduction of the OER energy barrier and experimental evidence confirms that the reaction proceeds via the lattice oxygen evolution mechanism(LOM).Consequently,Ce-NiCo-LDHs@SnO_(2)/NF exhibits high level electrochemical performance in OER,requiring only 234 m V overpotential to achieve a current density of 10 m A/cm^(2),with a Tafel slope of just 27.39 m V/dec.When paired with Pt/C/NF,an external potential of only 1.54 V is needed to drive OWS to attain a current density amounting to 10 m A/cm^(2).Furthermore,the catalyst demonstrates stability for 100 h during the OWS stability test.This study underscores the feasibility of enhancing the OER performance through Ce doping and the introduction of a conductive SnO_(2) layer.展开更多
Hard carbon(HC)in sodium-ion batteries is searched by numerous investigations,which can offer the excellent performance of reversible Na^(+)insertion and extraction.The covalent heteroatom doping in HC is recently wor...Hard carbon(HC)in sodium-ion batteries is searched by numerous investigations,which can offer the excellent performance of reversible Na^(+)insertion and extraction.The covalent heteroatom doping in HC is recently worth concentrating,which can dilate the interlayer spacing of graphite to adjust the electrochemical storage performance in carbon anodes.However,the reported doping strategies of the modified HC have only resulted in limited improvement,especially unobvious effects on tuning porous structure.In this study,tannin extract and K_(2)SO_(4) are respectively utilized as carbon source and sulfur source for the fabrication of HC,in which K_(2)SO_(4) can contribute to the heteroatom doping,and the pore forming as well.The tannin-derived sulfur-doped carbon anode shows the excellent cycle stability,achieving a high reversible capacity of 520.5 mAh/g at a current density of 100 mA/g.Even after 500 cycles at a current density of 3 A/g,a high specific capacity of 236.7 mAh/g and a capacity retention rate of 92.6%can be reserved.Compared with the initial carbon,the adsorption energy of Na^(+)is multifold times higher,whereas Na^(+)diffusion energy barriers manyfold decrease.Moreover,the full battery assembled with Na_(3)V_(2)(PO_(4))_(3)/tannin-based HC demonstrates a stable cycling performance.This work can manifest the potentiality of the tannin-based electrode as anode for a high-performance sodium-ion batteries(SIBs),which could especially offer an explanation of Na^(+)storage and solid-electrolyte interface(SEI)stability to the electrochemical performance.展开更多
Perovskite oxides are highly promising catalysts for the combustion removal of volatile organic compounds(VOCs)due to their excellent stability,structural flexibility,and compositional versatility.This study presents ...Perovskite oxides are highly promising catalysts for the combustion removal of volatile organic compounds(VOCs)due to their excellent stability,structural flexibility,and compositional versatility.This study presents a novel perovskite oxide that exhibits enhanced catalytic activity and superior durability for toluene combustion at reduced temperatures.This improvement is achieved by phosphorus doping at the B-site of LaCoO_(3-δ)(LC)perovskite oxide,followed by post-synthesis acid etching for a proper time.The resulting catalyst demonstrates increased specific surface area,higher total pore volume,and enhanced oxygen vacancy concentration both in the bulk and on the surface.Additionally,the activity of surface lattice oxygen species is significantly improved,leading to enhanced catalytic performance in toluene combustion.Notably,the optimized catalyst shows an exceptionally low activation energy(E_(a))of 49.3 kJ mol^(-1),with a T90 reduction of over 214℃compared to the phosphorus doped LC and 190℃compared to pristine LC.Phosphorus doping plays a main role in significantly improving the long-term durability,particularly in the presence of CO_(2)and H_(2)O,while acid etching boosts the catalytic activity.This work introduces a rational and innovative strategy for optimizing VOC oxidation by improving the structure and surface chemical states of perovskite catalysts.展开更多
Micro silicon(mSi)is a promising anode candidate for all-solid-state batteries due to its high specific capacity,low side reactions,and high tap density.However,silicon suffers from its poor electronic and ionic condu...Micro silicon(mSi)is a promising anode candidate for all-solid-state batteries due to its high specific capacity,low side reactions,and high tap density.However,silicon suffers from its poor electronic and ionic conductivity,which is particularly severe on a micro scale and in solid-state systems,leading to increased polarization and inferior electrochemical performance.Doping can broaden the transmission pathways and reduce the diffusion energy barrier for electrons and lithium ions.However,achieving effective,uniform doping in mSi is challenging due to its longer diffusion paths and higher energy barriers.Therefore,current doping research is primarily limited to nanosilicon.In this study,we successfully used a Joule-heating activated staged thermal treatment to achieve full-depth doping of germanium(Ge)in the mSi substrate.The Joule-heating process activated the mSi substrate,resulting in abundant vacancy defects that reduced the diffusion barrier of Ge into the silicon lattice and facilitated full-depth Ge doping.Surprisingly,the resulting Si-Ge anode exhibited significantly enhanced electrical conductivity(70 times).Meanwhile,the improved Li-ion conductivity in mSi and the reduced Young’s modulus enhance the electrode reaction kinetics and integrity after cycling.Ge-doped silicon anodes demonstrate excellent electrochemical performance when applied in sulfide solid-state half-cells and full-cells.This work provides substantial insights into the rational structural design of mSi alloyed anode materials,paving the way for the development of high-performance solid-state Li-ion batteries.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.52372150,12088101,and 11991060)the National Key R&D Program of China(Grant No.2022YFB4200305)。
文摘Wide-bandgap two-dimensional (2D) β-TeO_(2) has been reported as a high-mobility p-type transparent semiconductor [Nat. Electron. 4 277 (2021)], attracting significant attention. This "breakthrough" not only challenges the conventional characterization of TeO_(2) as an insulator but also conflicts with the anticipated difficulty in hole doping of TeO_(2) by established chemical trends. Notably, the reported Fermi level of 0.9 eV above the valence band maximum actually suggests that the material is an insulator, contradicting the high hole density obtained by Hall effect measurement. Furthermore, the detected residual Se and the possible reduced elemental Te in the 2D β-TeO_(2) samples introduces complexity, considering that elemental Se, Te, and Te_(1−x)Se_(x) themselves are high-mobility p-type semiconductors. Therefore, doubts regarding the true cause of the p-type conductivity observed in the 2D β-TeO_(2) samples arise. In this Letter, we employ density functional theory calculations to illustrate that TeO_(2), whether in its bulk forms of α-, β-, or γ-TeO_(2), or in the 2D β-TeO_(2) nanosheets, inherently exhibits insulating properties and poses challenges in carrier doping due to its shallow conduction band minimum and deep valence band maximum. Our findings shed light on the insulating properties and doping difficulty of TeO_(2), contrasting with the claimed p-type conductivity in the 2D β-TeO_(2) samples, prompting inquiries into the true origin of the p-type conductivity.
基金financially supported by the National Natural Science Foundation of China(Grant No.52372150)。
文摘p-type transparent oxide semiconductors(TOSs)are significant in the semiconductor industry,driving advancements in optoelectronic technologies for transparent electronic devices with unique properties.The recent discovery of p-type behavior in SeO_(2) has stimulated interest and confusion in the scientific community.In this Letter,we employ density functional theory calculations to reveal the intrinsic intrinsic insulating characteristics of SeO_(2) and highlight the substantial challenges in carrier doping.Our electronic structure analyses indicate that the Se 5^(2) states are energetically positioned too low to effectively interact with the O 2p orbitals,resulting in a valence band maximum(VBM)primarily dominated by the O 2p orbitals.The deep and localized nature of the VBM of SeO_(2) limits its potential as a high-mobility p-type TOS.Defect calculations demonstrate that all intrinsic defects in SeO_(2) exhibit deep transition levels within the bandgap.Regardless of the synthesis conditions,the Fermi level consistently resides in the mid-gap region.Furthermore,deep intrinsic acceptors and donors exhibit negative formation energies in the n-type and p-type regions,respectively,facilitating spontaneous formation and impeding external doping efforts.Thus,the reported p-type conductivity in SeO_(2) samples is unlikely to be intrinsic and is more plausibly attributable to reduced elemental Se,a well-known p-type semiconductor.
基金Project supported by the State Key Program for Basic Research of China(Grant No.2011CB302003)the National Natural Science Foundation of China(Grant Nos.61274058,61322403,61504057,and 61574075)+1 种基金the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20130013 and BK20150585)the Six Talent Peaks Project in Jiangsu Province,China(Grant No.2014XXRJ001)
文摘Zinc oxide（ZnO） is a compound semiconductor with a direct band gap and high exciton binding energy.The unique property,i.e.,high efficient light emission at ultraviolet band,makes ZnO potentially applied to the short-wavelength light emitting devices.However,efficient p-type doping is extremely hard for ZnO.Due to the wide band gap and low valence band energy,the self-compensation from donors and high ionization energy of acceptors are the two main problems hindering the enhancement of free hole concentration.Native defects in ZnO can be divided into donor-like and acceptorlike ones.The self-compensation has been found mainly to originate from zinc interstitial and oxygen vacancy related donors.While the acceptor-like defect,zinc vacancy,is thought to be linked to complex shallow acceptors in group-VA doped ZnO.Therefore,the understanding of the behaviors of the native defects is critical to the realization of high-efficient p-type conduction.Meanwhile,some novel ideas have been extensively proposed,like double-acceptor co-doping,acceptor doping in iso-valent element alloyed ZnO,etc.,and have opened new directions for p-type doping.Some of the approaches have been positively judged.In this article,we thus review the recent（2011-now） research progress of the native defects and p-type doping approaches globally.We hope to provide a comprehensive overview and describe a complete picture of the research status of the p-type doping in ZnO for the reference of the researchers in a similar area.
基金Funded by the National Social Science Fund Project(No.2012BTY014)
文摘Zinc oxide （ZnO） is a wide band-gap material of the Ⅱ-Ⅵ group with excellent optical properties for optoelectronics applications, such as the flat panel displays and solar cells used in sports tournament. Despite its advantages, the application of ZnO is hampered by the lack of stable p-type doping. In this paper, the recent progress in this field was briefly reviewed, and a comprehensive summary of the research was carded out on ZnO fabrication methods and its electrical, optical, and magnetic properties were presented.
基金Project supported by the National Natural Science Foundation of China （Grant No 10625416）.
文摘The electronic structures and optical properties of B3 ZnO series of Zn4X4-yMy（X ：O, S, Se or Te; M = N, Sb, C1 or I; y = 0 or 1） are studied by first-principles calculations using a pseudopotential plane-wave method. The results show that Zn d-X p orbital interactions play an important role in the p-type doping tendency in zinc-based Ⅱ-Ⅵ semiconductors. In ZnX, with increasing atomic number of X, Zn d-X p orbital interactions decrease and Zn s-X p orbital interactions increase. Additionally, substituting group-V elements for X will reduce the Zn d-X p orbital interactions while substituting group-VII elements for X will increase the Zn d-X p orbital interactions. The results also show that group-V-doped ZnX and group-Ⅷ-doped ZnX exhibit different optical behaviours due to their different orbital interaction effects.
基金Supported by the Candidate Talents Training Fund of Yunnan Province(202205AC160054)the National Natural Science Foundation of China(62174156)。
文摘The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.
基金Supported by the Project of Cultivating Innovative Talents for Colleges&Universities of Henan Province under Grant No 2002006the Natural Science Foundation of Department of Education of Henan Province under Grant No 2009B48003the Key Technologies R&D Program of Henan Province under Grant No 092102210005.
文摘We investigate the electronic structures and magnetic properties of ZnO doped with N,Cu,and(Cu+N)by using a first principles method and considering the strong correlation effect.It is interesting to compare these three systems.ZnO:N has weak p-type doping and unstable ferromagnetism,while ZnO:Cu becomes insulating due to the Jahn–Teller effect.Cu and N codoping can not only greatly improve the dopability of p-type doping accompanying the Jahn–Teller fading,but also enhance the ferromagnetism at the same time.The calculation results indicate that there is a win-win effect between N and Cu dopants in the ZnO:(Cu+N)system,which could possibly find applications in spintronics besides optoelectronics.
基金Supported by the'863'High Technology Program of China.
文摘Cluster model with DV-Xαmethod is used to study the structural and electronic properties of the p-type doping of ZnSe.It is found that there is Jahn-Teller distortion for P doping and almost no Jahn-Teller distortion for N doping,and that the impurity levels with respect to the maximum of valence band are 118 and 96meV for N and P doping,respectively.The reasons why N can serve as a better dopant than P for p-type ZnSe are discussed.
文摘Al-rich nitride,as one of the most important ultra-wide band-gap(UWBG)semiconductors,currently plays the key role of deep ultraviolet(DUV)optoelectronics and potentially possesses the advantages of the huge global investment in the manufacturing infrastructure associated with In Ga N material that has become the second most important semiconductor material after Si in the late 2010s[1,2].
基金financially supported by the National Natural Science Foundation of China(NSFC,62275002,51902078)the Anhui Provincial Natural Science Foundation(2008085MF205)the Fundamental Research Funds for the Central Universities(JZ2020HGTB0051)。
文摘The performance enhancement of MXene/semiconductor heterostructure-based light detectors is greatly restricted by the relatively small junction barrier due to the limited work function of MXenes.The work function of MXenes can be largely adjusted to approach 600 meV through simple incorporation of V_(2)O_(5) via a charge transfer doping mechanism.Exploiting this strategy,the performance of MXene/GaN heterostructure-based deep ultraviolet(DUV)photodetectors has been greatly improved.Specifically,the photocurrent is enhanced by nearly 3 times,and the dark current is suppressed at the lowest order of magnitude,resulting in improved responsivity and specific detectivity of 121.6 mA/W and 2.23×10^(13) Jones,respectively,at 265 nm.The device also displays an ultralow dark current of 10^(-14) A,a fast response speed of 0.4 ms/15.1 ms,a large linear dynamic range exceeding 150 dB,and a high DUV/near ultraviolet rejection ratio of 2.41×10^(5).Owing to its good device performance,the detector is capable of sensing weak photon signals produced by a fire flame and functions as an optical receiver to transmit a text signal in a DUV light communication system.The proposed MXene doping method is expected to help develop MXene-based electronic/optoelectronic devices,and the present DUV photodetectors will find potential applications in DUV optoelectronic systems.
基金supported by the National Natural Science Foundation of China(NSFC)(Nos.22178148 and 22278193)a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions.
文摘As a catalyst of the air cathode in zinc-air batteries,tungstic acid ferrous(FeWO_(4)),a nanoscale transition metal tungstate,shows a broad application prospect in the oxygen reduction reaction(ORR).While FeWO_(4)possesses favorable electrochemical properties and thermodynamic stability,its intrinsic semiconductor characteristics result in a relatively slow electron transfer rate,limiting the ORR catalytic activity.In this work,the electronic structure of FeWO_(4)is significantly modulated by introducing phosphorus(P)atoms with abundant valence electrons.The P doping can adjust the electronic structure of FeWO_(4)and then optimize oxygen-containing intermediates'absorption/desorption efficiency to achieve improved ORR activity.Furthermore,the sodium chloride template is utilized to construct a porous carbon framework for anchoring phosphorus-doped iron tungstate(P-FeWO_(4)/PNC).The porous carbon skeleton provides numerous active sites for the absorption/desorption and redox reactions on the P-FeWO_(4)/PNC surface and serves as mass transport channels for reactants and intermediates.The P-FeWO_(4)/PNC demonstrates ORR performance(E1/2=0.86 V vs.RHE).Furthermore,the zinc-air batteries incorporating the P-FeWO_(4)/PNC composite demonstrate an increased peak power density(172.2 mW·cm^(-2)),high specific capacity(810.1 mAh·g^(-1)),and sustained long-term cycling stability lasting up to 240 h.This research not only contributes to the advancement of cost-effective tungsten-based non-precious metallic ORR catalysts,but also guides their utilization in zinc-air batteries.
文摘Silica aerogel has broad applications in the field of high-temperature thermal insulation due to its low density,low thermal conductivity and high stability.However,its thermal insulation performance deteriorates significantly at elevated temperatures exceeding 600℃,primarily due to the collapse of pore structure.Meanwhile,the shielding capacity of SiO_(2) aerogel to the infrared radiation at high temperature is rather low due to the intrinsic properties of SiO_(2).Herein,a strategy for improving the high-temperature stability and infrared shielding properties of SiO_(2) aerogel via Ca doping was explored.Calcium-doped silica aerogel(CSA)powders were prepared by Sol-Gel,hydrothermal,and ambient pressure drying(APD)techniques using water glass and anhydrous calcium chloride as precursors and trimethylchlorosilane as a hydrophobic modifier.The effects of Ca/Si molar ratio in the precursor and hydrothermal conditions(temperature and pH)on the crystalline properties,microscopic morphology and pore structure of CSAs were investigated.The results show that the Ca/Si molar ratio and hydrothermal treatment have significant effects on the microstructure and heat resistance of CSAs in the temperature range of 400-1000℃.The samples sintered at 1000℃have a high specific surface area of 100.1 m^(2)/g and a pore volume of 0.8705 cm^(3)/g,indicating that the CSA has good heat resistance.One-side insulation tests at temperatures up to 600℃show that the sample with a Ca/Si molar ratio of 1.0 has the best insulation performance,with a cold surface temperature of 450℃,which is 27℃lower than that of the pure silica aerogel.
基金Project supported by the National Natural Science Foundation of China (12174075)the Scientific and Technological Bases and Talents of Guangxi (Guike AD21220016)+1 种基金Guangxi Science and Technology Major Project(AA23073018)the special fund for Guangxi Bagui Scholars。
文摘Mn^(2+)-doped CsPbCl_(3)(Mn^(2+):CsPbCl_(3)) nanocrystals(NCs) have attracted considerable attention due to their unique strong and broad orange-red emission band,presenting promising applications in the field of photoelectric devices.However,pristine Mn^(2+):CsPbCl_(3)NCs commonly suffer from low photoluminescence quantum yield(PL QY) and stability issues.Herein,we introduced europium ions(Eu^(3+))into Mn^(2+):CsPbCl_(3)NCs via the thermal injection synthesis method to obtain high performance Eu^(3+)and Mn^(2+)codoped CsPbCl_(3)(Eu^(3+)/Mn^(2+):CsPbCl_(3)) NCs.The maximum PL QY of the resulting Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs reaches up to 90.92%.It is found that the doping of Eu^(3+)ions significantly reduces the non-radiative recombination caused by high defect states,and improves the energy transfer efficiency from exciton to Mn^(2+),thereby boosting the PL performance.Moreover,doping Eu^(3+)ions notably improves the UV-light and water stability of Mn^(2+):CsPbCl_(3)NCs.We further demonstrate the application versatility of Eu^(3+)/Mn^(2+):CsPbCl_(3)NCs in white light emitting diodes(WLEDs) and optical anticounterfeiting applications.This work provides a valuable perspective for the attainment of high performance Mn^(2+):CsPbCl_(3)NCs and lays a foundation for the codoping of other lanthanide ions to adjust the luminescence properties of Mn^(2+):CsPbCl_(3)NCs.
文摘Herein,antibacterial silver‑doped fluorescent carbon dots(Ag‑CDs)were synthesized through a stepwise hydrothermal method,with polyethyleneimine(PEI),citric acid(CA),and silver nitrate(AgNO3)serving as precursors.The applicability and antimicrobial efficacy of these nanomaterials were systematically investigated for metal ion sensing.Experimental evidence demonstrated that the Ag‑CDs exhibited a pronounced fluorescence quenching response toward ferric ions(Fe^(3+)),enabling their quantitative determination via a linear concentration‑dependent relationship.These Ag‑CDs exhibited significant inhibitory effects on biofilm growth and disruption for both Escherichia coli and Staphylococcus aureus.Mechanism investigations indicate that Ag‑CDs induced the death of Escherichia coli and Pseudomonas aeruginosa by disrupting their bacterial morphology and structure,triggering the generation of intracellular reactive oxygen species(ROS),and impairing their antioxidant defense system.
基金financially supported by the National Natural Science Foundation of China(52271200)Guangdong Basic and Applied Basic Research Foundation(2024A1515010393)USTB MatCom of Beijing Advanced Innovation Center for Materials Genome Engineering。
文摘Electrocatalytic carbon dioxide reduction is a crucial method for addressing energy issues and achieving carbon neutrality.Doping of Cu catalysts represents an effective approach to regulate electrocatalytic carbon dioxide reduction.This review article summarizes the research progress on improving the performance of Cu-based material electrocatalysts through doping regulation.The background,fundamental research,evaluation parameters,and methods for catalyst design,along with their influencing factors,are introduced.Emphasis is placed on the impact of doping with different elements(such as noble metals,transition metals,main-group metals,non-metals,etc.)on the performance of Cu-based catalysts,including the mechanisms for enhancing activity,selectivity,and stability.In-situ characterization techniques have revealed the structural evolution and catalytic mechanisms during the doping process.Mechanistic studies,leveraging the ever-advancing computational capabilities and high-throughput methods,have given rise to typical computational descriptors like volcano plots,free-energy diagrams,and machine-learning-based approaches.These descriptors have become key tools for screening high-efficiency catalysts in various application scenarios of the electrochemical carbon dioxide reduction reaction(CO_(2)RR).This article comprehensively summarizes the current research achievements and looks ahead to the future,indicating that strengthening the combination of theory and experiment and exploring industrial applications are the future research directions,aiming to provide a comprehensive reference for the development of highly efficient doped Cu-based electrocatalysts.
文摘Synthetic dyes,particularly azo dyes,pose significant environmental and health risks due to their persistence,toxicity,and potential carcinogenicity.Zinc oxide(ZnO)is a promising photocatalyst for wastewater remediation,but its wide bandgap and rapid charge recombination limit its practical efficacy.Furthermore,conventional doping methods often rely on hazardous chemical precursors,undermining the sustainability of the overall approach.This review introduces a novel and sustainable paradigm:the utilization of biomass-derived precursors as green reagents for the in-situ synthesis and simultaneous phosphorus-nitrogen(P-N)co-doping of ZnO nanoparticles.We critically analyze how the intrinsic biochemical composition of biomass,rich in P,N,and other heteroatoms,facilitates this one-pot,eco-friendly functionalization.This integrated strategy merges the performance enhancement offered by advanced co-doping,such as extended visible-light absorption and suppressed charge recombination,with the core principles of green chemistry and circular economy.It offers a dual benefit:creating highly effective photocatalysts for the degradation of persistent pollutants and valorizing abundant agricultural or biological waste streams.Our comprehensive evaluation goes beyond description to critically assess the underlying mechanisms,comparative efficacy,scalability challenges,and future research directions of this emerging field.This review underscores the unique contribution of biomass-mediated synthesis to advancing sustainable nanotechnology for environmental applications.
基金supported by the National Natural Science Foundation of China (No.52274304)。
文摘Developing catalysts with excellent stability while significantly reducing the overpotential of the oxygen evolution reaction(OER) is crucial for advancing overall water splitting(OWS) systems.In this study,we synthesized the electrode material Ce-NiCo-LDHs@SnO_(2)/NF through a two-step hydrothermal reaction,where Ce-doped NiCo-LDHs are grown on nickel foam modified by a SnO_(2) layer.Ce doping adjusts the internal electronic distribution of Ni Co-LDHs,while the introduction of the SnO_(2) layer enhances electron transfer capability.Together,these factors contribute to the reduction of the OER energy barrier and experimental evidence confirms that the reaction proceeds via the lattice oxygen evolution mechanism(LOM).Consequently,Ce-NiCo-LDHs@SnO_(2)/NF exhibits high level electrochemical performance in OER,requiring only 234 m V overpotential to achieve a current density of 10 m A/cm^(2),with a Tafel slope of just 27.39 m V/dec.When paired with Pt/C/NF,an external potential of only 1.54 V is needed to drive OWS to attain a current density amounting to 10 m A/cm^(2).Furthermore,the catalyst demonstrates stability for 100 h during the OWS stability test.This study underscores the feasibility of enhancing the OER performance through Ce doping and the introduction of a conductive SnO_(2) layer.
基金supported by National Natural Science Foundation of China(Nos.32271791,32171709 and 22475053)Hunan Provincial Natural Science Foundation of China(No.2024JJ7643)Natural Science Foundation of Shanghai(No.22ZR1404100).
文摘Hard carbon(HC)in sodium-ion batteries is searched by numerous investigations,which can offer the excellent performance of reversible Na^(+)insertion and extraction.The covalent heteroatom doping in HC is recently worth concentrating,which can dilate the interlayer spacing of graphite to adjust the electrochemical storage performance in carbon anodes.However,the reported doping strategies of the modified HC have only resulted in limited improvement,especially unobvious effects on tuning porous structure.In this study,tannin extract and K_(2)SO_(4) are respectively utilized as carbon source and sulfur source for the fabrication of HC,in which K_(2)SO_(4) can contribute to the heteroatom doping,and the pore forming as well.The tannin-derived sulfur-doped carbon anode shows the excellent cycle stability,achieving a high reversible capacity of 520.5 mAh/g at a current density of 100 mA/g.Even after 500 cycles at a current density of 3 A/g,a high specific capacity of 236.7 mAh/g and a capacity retention rate of 92.6%can be reserved.Compared with the initial carbon,the adsorption energy of Na^(+)is multifold times higher,whereas Na^(+)diffusion energy barriers manyfold decrease.Moreover,the full battery assembled with Na_(3)V_(2)(PO_(4))_(3)/tannin-based HC demonstrates a stable cycling performance.This work can manifest the potentiality of the tannin-based electrode as anode for a high-performance sodium-ion batteries(SIBs),which could especially offer an explanation of Na^(+)storage and solid-electrolyte interface(SEI)stability to the electrochemical performance.
基金support from the National Key Research and Development Program of China(Project No.2018YFB1502903).
文摘Perovskite oxides are highly promising catalysts for the combustion removal of volatile organic compounds(VOCs)due to their excellent stability,structural flexibility,and compositional versatility.This study presents a novel perovskite oxide that exhibits enhanced catalytic activity and superior durability for toluene combustion at reduced temperatures.This improvement is achieved by phosphorus doping at the B-site of LaCoO_(3-δ)(LC)perovskite oxide,followed by post-synthesis acid etching for a proper time.The resulting catalyst demonstrates increased specific surface area,higher total pore volume,and enhanced oxygen vacancy concentration both in the bulk and on the surface.Additionally,the activity of surface lattice oxygen species is significantly improved,leading to enhanced catalytic performance in toluene combustion.Notably,the optimized catalyst shows an exceptionally low activation energy(E_(a))of 49.3 kJ mol^(-1),with a T90 reduction of over 214℃compared to the phosphorus doped LC and 190℃compared to pristine LC.Phosphorus doping plays a main role in significantly improving the long-term durability,particularly in the presence of CO_(2)and H_(2)O,while acid etching boosts the catalytic activity.This work introduces a rational and innovative strategy for optimizing VOC oxidation by improving the structure and surface chemical states of perovskite catalysts.
基金financially supported by the National Key Research and Development Program(2022YFE0127400)the National Natural Science Foundation of China(52172040,52202041,and U23B2077)+1 种基金Taishan Scholar Project of Shandong Province(tsqn202211086,ts202208832,tsqnz20221118)the Fundamental Research Funds for the Central Universities(23CX06055A).
文摘Micro silicon(mSi)is a promising anode candidate for all-solid-state batteries due to its high specific capacity,low side reactions,and high tap density.However,silicon suffers from its poor electronic and ionic conductivity,which is particularly severe on a micro scale and in solid-state systems,leading to increased polarization and inferior electrochemical performance.Doping can broaden the transmission pathways and reduce the diffusion energy barrier for electrons and lithium ions.However,achieving effective,uniform doping in mSi is challenging due to its longer diffusion paths and higher energy barriers.Therefore,current doping research is primarily limited to nanosilicon.In this study,we successfully used a Joule-heating activated staged thermal treatment to achieve full-depth doping of germanium(Ge)in the mSi substrate.The Joule-heating process activated the mSi substrate,resulting in abundant vacancy defects that reduced the diffusion barrier of Ge into the silicon lattice and facilitated full-depth Ge doping.Surprisingly,the resulting Si-Ge anode exhibited significantly enhanced electrical conductivity(70 times).Meanwhile,the improved Li-ion conductivity in mSi and the reduced Young’s modulus enhance the electrode reaction kinetics and integrity after cycling.Ge-doped silicon anodes demonstrate excellent electrochemical performance when applied in sulfide solid-state half-cells and full-cells.This work provides substantial insights into the rational structural design of mSi alloyed anode materials,paving the way for the development of high-performance solid-state Li-ion batteries.
