Ferromagnetic materials play an important role in memory materials,but conventional control methods are often limited by issues such as high power consumption and volatility.Multiferroic heterostructures provide a pro...Ferromagnetic materials play an important role in memory materials,but conventional control methods are often limited by issues such as high power consumption and volatility.Multiferroic heterostructures provide a promising alternative to achieve low power consumption and nonvolatile electric control of magnetic properties.In this paper,a two-dimensional multiferroic van der Waals heterostructure OsCl_(2)/Sc_(2)CO_(2),which is composed of ferromagnetic monolayer OsCl_(2)and ferroelectric monolayer Sc_(2)CO_(2),is studied by first-principles density functional theory.The results show that by reversing the direction of the electric polarization of Sc_(2)CO_(2),OsCl_(2)can be transformed from a semiconductor to a half-metal,demonstrating a nonvolatile electrical manipulation of the heterostructure through ferroelectric polarization.The underlying physical mechanism is explained by band alignments and charge density differences.Furthermore,based on the heterostructure,we construct a multiferroic tunnel junction with a tunnel electroresistance ratio of 3.38×10^(14)%and a tunnel magnetoresistance ratio of 5.04×10^(6)%,allowing control of conduction states via instantaneous electric or magnetic fields.The findings provide a feasible strategy for designing advanced nanodevices based on the giant tunnel electroresistance and tunnel magnetoresistance effects.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12074213,11574108,and 12104253)the National Key R&D Program of China(Grant No.2022YFA1403103)+2 种基金the Major Basic Program of the Natural Science Foundation of Shandong Province(Grant No.ZR2021ZD01)the Natural Science Foundation of Shandong Provincial(Grant No.ZR2023MA082)the Project of Introduction and Cultivation for Young Innovative Talents in Colleges and Universities of Shandong Province。
文摘Ferromagnetic materials play an important role in memory materials,but conventional control methods are often limited by issues such as high power consumption and volatility.Multiferroic heterostructures provide a promising alternative to achieve low power consumption and nonvolatile electric control of magnetic properties.In this paper,a two-dimensional multiferroic van der Waals heterostructure OsCl_(2)/Sc_(2)CO_(2),which is composed of ferromagnetic monolayer OsCl_(2)and ferroelectric monolayer Sc_(2)CO_(2),is studied by first-principles density functional theory.The results show that by reversing the direction of the electric polarization of Sc_(2)CO_(2),OsCl_(2)can be transformed from a semiconductor to a half-metal,demonstrating a nonvolatile electrical manipulation of the heterostructure through ferroelectric polarization.The underlying physical mechanism is explained by band alignments and charge density differences.Furthermore,based on the heterostructure,we construct a multiferroic tunnel junction with a tunnel electroresistance ratio of 3.38×10^(14)%and a tunnel magnetoresistance ratio of 5.04×10^(6)%,allowing control of conduction states via instantaneous electric or magnetic fields.The findings provide a feasible strategy for designing advanced nanodevices based on the giant tunnel electroresistance and tunnel magnetoresistance effects.
