For reducing the core loss of grain oriented silicon steel and improving its aging property, a new method, the LLSA by using Sb as the laser surface alloying element, was investigated, and at proper technique conditio...For reducing the core loss of grain oriented silicon steel and improving its aging property, a new method, the LLSA by using Sb as the laser surface alloying element, was investigated, and at proper technique conditions rather good result was obtained.展开更多
Bilayer transition-metal dichalcogenides(TMDCs)are promising channel materials for state-of-the-art transistors,due to their smaller bandgap,higher carrier mobility,and better electrostatic control than those of the m...Bilayer transition-metal dichalcogenides(TMDCs)are promising channel materials for state-of-the-art transistors,due to their smaller bandgap,higher carrier mobility,and better electrostatic control than those of the monolayer counterparts.Epitaxial growth and controllable doping of wafer-scale bilayer TMDCs single crystals are two pivotal tasks to meet the practical applications of high-performance electronic devices.Despite considerable efforts have been made,addressing such fundamental issues simultaneously has yet to be realized.Here we design an ingenious Fe-assisted epitaxial strategy to synthesize centimeter-size uniform bilayer tungsten disulfide(WS_(2))with unidirectional alignment on industry-compatible c-plane sapphire.The introduction of Fe promotes the formation of parallel steps on sapphire surfaces to induce the edge-nucleation of unidirectionally aligned bilayer WS_(2)and the evolution of centimeter-size uniform films.The ionic liquid gated transistors with ultrahigh electron mobility(169 cm^(2)·V^(-1)·s^(-1))and remarkable on/off current ratio(10^(8))are constructed based on the centimeter-size bilayer Fe-WS_(2),due to the reduction of Schottky barrier width induced by Fe doping.This work provides a simple and general approach for synthesizing and doping of wafer-scale bilayer TMDCs,which should accelerate the further device downscaling to extend Moore’s law.展开更多
Epitaxy growth and accurate doping of wafer-scale two-dimensional(2D)semiconductor single crystals are two crucial issues to break the scaling limitation of transistors.Despite remarkable progresses have been realized...Epitaxy growth and accurate doping of wafer-scale two-dimensional(2D)semiconductor single crystals are two crucial issues to break the scaling limitation of transistors.Despite remarkable progresses have been realized in preparing large-area 2D n-type semiconductor single crystals,the epitaxy growth of wafer-scale p-type semiconductor single crystals have yet to be realized.Here an in-situ hole doping strategy is proposed to control the domain orientation and modulate the electronic property of monolayer MoS_(2),which enable the achievement of centimeter-sized ptype semiconductor single crystals.The introduction of hole dopants(e.g.,V_(2)O_(5),NH_(4)VO_(3),and VCl_(3))contributes to the parallel steps formation on sapphire surfaces to induce the unidirectional monolayer MoS_(2) domains nucleation.Meanwhile,the electronic property of monolayer MoS_(2) is also changed from n-type semiconducting to p-type.Benefiting from the different doping abilities of V_(2)O_(5),NH_(4)VO_(3),and VCl_(3),the V doping concentrations can be regulated within a large range from 0.36 to 12.60 at%,which delivers an excellent hole mobility(17.6 cm^(2)·V^(–1)·s^(–1)).This work provides a new avenue for synthesizing wafer-scale 2D p-type semiconductor single crystals,which will enrich the device functions and extend Moore’s law.展开更多
基金National Natural Science FOundation of China! (No. 59974010).
文摘For reducing the core loss of grain oriented silicon steel and improving its aging property, a new method, the LLSA by using Sb as the laser surface alloying element, was investigated, and at proper technique conditions rather good result was obtained.
基金supported by the National Key R&D Program of China(No.2021YFA1200800)the National Natural Science Foundation of China(Nos.U24A2055, 92164103)+2 种基金the Natural Science Foundation of Hubei Province(No.2024AFA052)Wuhan Science and Technology Bureau(Knowledge Innovation Program of Wuhan-Basic Research,No.2023010201010067)the Fundamental Research Funds for the Central Universities(No.2042023kf0187)。
文摘Bilayer transition-metal dichalcogenides(TMDCs)are promising channel materials for state-of-the-art transistors,due to their smaller bandgap,higher carrier mobility,and better electrostatic control than those of the monolayer counterparts.Epitaxial growth and controllable doping of wafer-scale bilayer TMDCs single crystals are two pivotal tasks to meet the practical applications of high-performance electronic devices.Despite considerable efforts have been made,addressing such fundamental issues simultaneously has yet to be realized.Here we design an ingenious Fe-assisted epitaxial strategy to synthesize centimeter-size uniform bilayer tungsten disulfide(WS_(2))with unidirectional alignment on industry-compatible c-plane sapphire.The introduction of Fe promotes the formation of parallel steps on sapphire surfaces to induce the edge-nucleation of unidirectionally aligned bilayer WS_(2)and the evolution of centimeter-size uniform films.The ionic liquid gated transistors with ultrahigh electron mobility(169 cm^(2)·V^(-1)·s^(-1))and remarkable on/off current ratio(10^(8))are constructed based on the centimeter-size bilayer Fe-WS_(2),due to the reduction of Schottky barrier width induced by Fe doping.This work provides a simple and general approach for synthesizing and doping of wafer-scale bilayer TMDCs,which should accelerate the further device downscaling to extend Moore’s law.
基金supported by the National Natural Science Foundation of China(Nos.U24A2055 and 92164103)the National Key R&D Program of China(No.2021YFA1200800)+2 种基金the Natural Science Foundation of Hubei Province(No.2024AFA052)the Natural Science Foundation of Wuhan or Wuhan Science and Technology Bureau(No.2023010201010067)the Fundamental Research Funds for the Central Universities(No.2042023kf0187).
文摘Epitaxy growth and accurate doping of wafer-scale two-dimensional(2D)semiconductor single crystals are two crucial issues to break the scaling limitation of transistors.Despite remarkable progresses have been realized in preparing large-area 2D n-type semiconductor single crystals,the epitaxy growth of wafer-scale p-type semiconductor single crystals have yet to be realized.Here an in-situ hole doping strategy is proposed to control the domain orientation and modulate the electronic property of monolayer MoS_(2),which enable the achievement of centimeter-sized ptype semiconductor single crystals.The introduction of hole dopants(e.g.,V_(2)O_(5),NH_(4)VO_(3),and VCl_(3))contributes to the parallel steps formation on sapphire surfaces to induce the unidirectional monolayer MoS_(2) domains nucleation.Meanwhile,the electronic property of monolayer MoS_(2) is also changed from n-type semiconducting to p-type.Benefiting from the different doping abilities of V_(2)O_(5),NH_(4)VO_(3),and VCl_(3),the V doping concentrations can be regulated within a large range from 0.36 to 12.60 at%,which delivers an excellent hole mobility(17.6 cm^(2)·V^(–1)·s^(–1)).This work provides a new avenue for synthesizing wafer-scale 2D p-type semiconductor single crystals,which will enrich the device functions and extend Moore’s law.
