基于系统级封装(System in a Package, SiP)技术的SRAM型FPGA微系统广泛应用于航天领域。由于微系统复杂的封装结构,限制了大多数传统失效分析设备与分析方式的应用。针对微系统器件的故障诊断困难、测试流程复杂等可靠性问题,开展了常...基于系统级封装(System in a Package, SiP)技术的SRAM型FPGA微系统广泛应用于航天领域。由于微系统复杂的封装结构,限制了大多数传统失效分析设备与分析方式的应用。针对微系统器件的故障诊断困难、测试流程复杂等可靠性问题,开展了常见故障分析研究。对SRAM配置固有缺陷和FPGA内部配置刷新电路异常等典型故障的产生机理进行了深入分析和总结。结合理论分析和问题现象,提出了配置位回读校验测试及比对、辅助电源VCC, AUX电流参数一致性控制等测试筛选方法,有效提升了测试覆盖性。利用相应测试手段和数据分析方法,可精准定位失效机理与失效部位,对后续宇航用SRAM型FPGA微系统应用及筛选有重要意义。展开更多
Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configurati...Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configuration designs,ensuring precision,and facilitating scalability for mass production.Photolithography stands out as an ideal technology,leveraging its unparalleled resolution,exceptional design flexibility,and entrenched position within the mature semiconductor industry.However,comprehensive reviews on its application in MB development remain scarce.This review aims to bridge that gap by thoroughly assessing the recent status and promising prospects of photolithographic microfabrication for MBs.Firstly,we delve into the fundamental principles and step-by-step procedures of photolithography,offering a nuanced understanding of its operational mechanisms and the criteria for photoresist selection.Subsequently,we highlighted the specific roles of photolithography in the fabrication of MBs,including its utilization as a template for creating miniaturized micropatterns,a protective layer during the etching process,a mold for soft lithography,a constituent of MB active component,and a sacrificial layer in the construction of micro-Swiss-roll structure.Finally,the review concludes with a summary of the key challenges and future perspectives of MBs fabricated by photolithography,providing comprehensive insights and sparking research inspiration in this field.展开更多
Coupled-waveguide devices are essential in photonic integrated circuits for coupling,polarization handling,and mode manipulation.However,the performance of these devices usually suffers from high wavelength and struct...Coupled-waveguide devices are essential in photonic integrated circuits for coupling,polarization handling,and mode manipulation.However,the performance of these devices usually suffers from high wavelength and structure sensitivity,which makes it challenging to realize broadband and reliable on-chip optical functions.Recently,topological pumping of edge states has emerged as a promising solution for implementing robust optical couplings.In this paper,we propose and experimentally demonstrate broadband on-chip mode manipulation with very large fabrication tolerance based on the Rice–Mele modeled silicon waveguide arrays.The Thouless pumping mechanism is employed in the design to implement broadband and robust mode conversion and multiplexing.The experimental results prove that various mode-order conversions with low insertion losses and intermodal crosstalk can be achieved over a broad bandwidth of 80 nm ranging from 1500 to 1580 nm.Thanks to such a topological design,the device has a remarkable fabrication tolerance of±70 nm for the structural deviations in waveguide width and gap distance,which is,to the best of our knowledge,the highest among the coupled-waveguide mode-handling devices reported so far.As a proof-of-concept experiment,we cascade the topological mode-order converters to form a four-channel mode-division multiplexer and demonstrate the transmission of a 200-Gb/s 16-quadrature amplitude modulation signal for each mode channel,with the bit error rates below the 7%forward error correction threshold of 3.8×10^(-3).We reveal the possibility of developing new classes of broadband and fabrication-tolerant coupled-waveguide devices with topological photonic approaches,which may find applications in many fields,including optical interconnects,quantum communications,and optical computing.展开更多
A new on-chip light source configuration has been proposed,which utilizes the interaction between a microwave or laser and a dielectric nanopillar array to generate a periodic electromagnetic near-field and applies pe...A new on-chip light source configuration has been proposed,which utilizes the interaction between a microwave or laser and a dielectric nanopillar array to generate a periodic electromagnetic near-field and applies periodic transverse acceleration to relativistic electrons to generate high-energy photon radiation.The dielectric nanopillar array interacting with the driving field acts as an electron undulator,in which the near-field drives electrons to oscillate.When an electron beam propagates through this nanopillar array in this light source configuration,it is subjected to a periodic transverse near-field force and will radiate X-ray or evenγ-ray high-energy photons after a relativistic frequency up-conversion.Compared with the undulator which is based on the interaction between strong lasers and nanostructures to generate a plasmonic near-field,this configuration is less prone to damage during operation.展开更多
The integration of artificial intelligence(AI)with satellite technology is ushering in a new era of space exploration,with small satellites playing a pivotal role in advancing this field.However,the deployment of mach...The integration of artificial intelligence(AI)with satellite technology is ushering in a new era of space exploration,with small satellites playing a pivotal role in advancing this field.However,the deployment of machine learning(ML)models in space faces distinct challenges,such as single event upsets(SEUs),which are triggered by space radiation and can corrupt the outputs of neural networks.To defend against this threat,we investigate laser-based fault injection techniques on 55-nm SRAM cells,aiming to explore the impact of SEUs on neural network performance.In this paper,we propose a novel solution in the form of Bin-DNCNN,a binary neural network(BNN)-based model that significantly enhances robustness to radiation-induced faults.We conduct experiments to evaluate the denoising effectiveness of different neural network architectures,comparing their resilience to weight errors before and after fault injections.Our experimental results demonstrate that binary neural networks(BNNs)exhibit superior robustness to weight errors compared to traditional deep neural networks(DNNs),making them a promising candidate for spaceborne AI applications.展开更多
This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) unde...This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.展开更多
文摘基于系统级封装(System in a Package, SiP)技术的SRAM型FPGA微系统广泛应用于航天领域。由于微系统复杂的封装结构,限制了大多数传统失效分析设备与分析方式的应用。针对微系统器件的故障诊断困难、测试流程复杂等可靠性问题,开展了常见故障分析研究。对SRAM配置固有缺陷和FPGA内部配置刷新电路异常等典型故障的产生机理进行了深入分析和总结。结合理论分析和问题现象,提出了配置位回读校验测试及比对、辅助电源VCC, AUX电流参数一致性控制等测试筛选方法,有效提升了测试覆盖性。利用相应测试手段和数据分析方法,可精准定位失效机理与失效部位,对后续宇航用SRAM型FPGA微系统应用及筛选有重要意义。
基金supported by the National Natural Science Foundation of China(22125903,22439003,22209175)the National Key R&D Program of China(Grant 2022YFA1504100,2023YFB4005204)+1 种基金the Energy Revolution S&T Program of Yulin Innovation Institute of Clean Energy(Grant E412010508)the State Key Laboratory of Catalysis(No:2024SKL-A-001)。
文摘Microbatteries(MBs)are crucial to power miniaturized devices for the Internet of Things.In the evolutionary journey of MBs,fabrication technology emerges as the cornerstone,guiding the intricacies of their configuration designs,ensuring precision,and facilitating scalability for mass production.Photolithography stands out as an ideal technology,leveraging its unparalleled resolution,exceptional design flexibility,and entrenched position within the mature semiconductor industry.However,comprehensive reviews on its application in MB development remain scarce.This review aims to bridge that gap by thoroughly assessing the recent status and promising prospects of photolithographic microfabrication for MBs.Firstly,we delve into the fundamental principles and step-by-step procedures of photolithography,offering a nuanced understanding of its operational mechanisms and the criteria for photoresist selection.Subsequently,we highlighted the specific roles of photolithography in the fabrication of MBs,including its utilization as a template for creating miniaturized micropatterns,a protective layer during the etching process,a mold for soft lithography,a constituent of MB active component,and a sacrificial layer in the construction of micro-Swiss-roll structure.Finally,the review concludes with a summary of the key challenges and future perspectives of MBs fabricated by photolithography,providing comprehensive insights and sparking research inspiration in this field.
基金supported by the National Key R&D Program of China(Grant No.2023YFB2905503)the National Natural Science Foundation of China(Grant Nos.62035016,62105200,62475146,and 62341508).
文摘Coupled-waveguide devices are essential in photonic integrated circuits for coupling,polarization handling,and mode manipulation.However,the performance of these devices usually suffers from high wavelength and structure sensitivity,which makes it challenging to realize broadband and reliable on-chip optical functions.Recently,topological pumping of edge states has emerged as a promising solution for implementing robust optical couplings.In this paper,we propose and experimentally demonstrate broadband on-chip mode manipulation with very large fabrication tolerance based on the Rice–Mele modeled silicon waveguide arrays.The Thouless pumping mechanism is employed in the design to implement broadband and robust mode conversion and multiplexing.The experimental results prove that various mode-order conversions with low insertion losses and intermodal crosstalk can be achieved over a broad bandwidth of 80 nm ranging from 1500 to 1580 nm.Thanks to such a topological design,the device has a remarkable fabrication tolerance of±70 nm for the structural deviations in waveguide width and gap distance,which is,to the best of our knowledge,the highest among the coupled-waveguide mode-handling devices reported so far.As a proof-of-concept experiment,we cascade the topological mode-order converters to form a four-channel mode-division multiplexer and demonstrate the transmission of a 200-Gb/s 16-quadrature amplitude modulation signal for each mode channel,with the bit error rates below the 7%forward error correction threshold of 3.8×10^(-3).We reveal the possibility of developing new classes of broadband and fabrication-tolerant coupled-waveguide devices with topological photonic approaches,which may find applications in many fields,including optical interconnects,quantum communications,and optical computing.
基金pported by the National Natural Science Foundation of China(Grant Nos.12325409,12388102,12074398,and U2267204)the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-060)the Shanghai Pilot Program for Basic Research,Chinese Academy of Sciences Shanghai Branch。
文摘A new on-chip light source configuration has been proposed,which utilizes the interaction between a microwave or laser and a dielectric nanopillar array to generate a periodic electromagnetic near-field and applies periodic transverse acceleration to relativistic electrons to generate high-energy photon radiation.The dielectric nanopillar array interacting with the driving field acts as an electron undulator,in which the near-field drives electrons to oscillate.When an electron beam propagates through this nanopillar array in this light source configuration,it is subjected to a periodic transverse near-field force and will radiate X-ray or evenγ-ray high-energy photons after a relativistic frequency up-conversion.Compared with the undulator which is based on the interaction between strong lasers and nanostructures to generate a plasmonic near-field,this configuration is less prone to damage during operation.
文摘The integration of artificial intelligence(AI)with satellite technology is ushering in a new era of space exploration,with small satellites playing a pivotal role in advancing this field.However,the deployment of machine learning(ML)models in space faces distinct challenges,such as single event upsets(SEUs),which are triggered by space radiation and can corrupt the outputs of neural networks.To defend against this threat,we investigate laser-based fault injection techniques on 55-nm SRAM cells,aiming to explore the impact of SEUs on neural network performance.In this paper,we propose a novel solution in the form of Bin-DNCNN,a binary neural network(BNN)-based model that significantly enhances robustness to radiation-induced faults.We conduct experiments to evaluate the denoising effectiveness of different neural network architectures,comparing their resilience to weight errors before and after fault injections.Our experimental results demonstrate that binary neural networks(BNNs)exhibit superior robustness to weight errors compared to traditional deep neural networks(DNNs),making them a promising candidate for spaceborne AI applications.
基金supported by the National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment(No.6142910220208)National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘This paper explores the impact of back-gate bias (V_(soi)) and supply voltage (V_(DD)) on the single-event upset (SEU) cross section of 0.18μm configurable silicon-on-insulator static random-access memory (SRAM) under high linear energy transfer heavyion experimentation.The experimental findings demonstrate that applying a negative back-gate bias to NMOS and a positive back-gate bias to PMOS enhances the SEU resistance of SRAM.Specifically,as the back-gate bias for N-type transistors(V_(nsoi)) decreases from 0 to-10 V,the SEU cross section decreases by 93.23%,whereas an increase in the back-gate bias for P-type transistors (V_(psoi)) from 0 to 10 V correlates with an 83.7%reduction in SEU cross section.Furthermore,a significant increase in the SEU cross section was observed with increase in supply voltage,as evidenced by a 159%surge at V_(DD)=1.98 V compared with the nominal voltage of 1.8 V.To explore the physical mechanisms underlying these experimental data,we analyzed the dependence of the critical charge of the circuit and the collected charge on the bias voltage by simulating SEUs using technology computer-aided design.
